MRFE6S9160HSR3 vs MRF8S9102NR3 Comparação
Comparação detalhada lado a lado de MRFE6S9160HSR3 por NXP Semiconductors e MRF8S9102NR3 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | MRFE6S9160HSR3 | MRF8S9102NR3 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $55,20 | $24,10 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale) |
| Part Number | MRFE6S9160HSR3 | — |
| Tipo de transistor | LDMOS, N-Channel, Enhancement-Mode, Lateral | N-Channel Lateral Enhancement-Mode MOSFET |
| Drain-Source Voltage (VDSS) | 66 V (rated) | — |
| Tensão de ruptura dreno-fonte | [DATA_NEEDED: V(BR)DSS minimum] | — |
| Operating Drain Voltage (VDD) | 28 V (typical bias) | — |
| Continuous Drain Current (ID) | 10 uA [leakage spec context, ID max [DATA_NEEDED]] | — |
| Quiescent Current (IDQ) | 1200 mA | — |
| Operating Frequency Range | 865 MHz to 960 MHz | 865 MHz to 960 MHz |
| Test Frequency | 880 MHz | 920 MHz |
| Output Power (Pout) Avg. | 35 W (under N-CDMA drive, 9.8 dB PAR) | — |
| Output Power Peak | 160 W (peak envelope) | — |
| Power Gain | 21 dB (typical at 880 MHz) | — |
| Drain Efficiency | 31% (typical at 35 W avg.) | — |
| ACPR at 750 kHz Offset | -46.8 dBc | — |
| Encapsulamento | NI-780S (NI780HS) ceramic, bolted flange | OM-780-2 (3-pin ceramic, flange mount) |
| Tipo de montagem | Through-hole / chassis mount with flange | Chassis / flange mount with bolt-down thermal pad |
| Status RoHS | [DATA_NEEDED: confirm via latest distributor listing] | [DATA_NEEDED: rohs compliance] |
| Technology | HV6E (6th gen high-voltage LDMOS) | — |
| Part Family | — | MRF8S9102N / HV8 series |
| Application | — | RF Power Amplifier, W-CDMA base station |
| Drain-Source Operating Voltage (VDS) | — | 28 V (typical test condition) |
| Drain-Source Breakdown Voltage (VDSS) | — | 70 V (max) |
| Average Output Power (POUT) | — | 28 W |
| Drain Current (ID) at bias | — | 750 mA |
| Power Gain (Gp) | — | 23.1 dB |
| Modulation Format | — | Single W-CDMA (also Class AB/C capable) |
| Contagem de pinos | — | 3 |
| Operating Mode | — | Class AB or Class C |