MRFE6S9160HSR3 vs MRF8S9102NR3 비교

다음의 상세 나란히 비교: MRFE6S9160HSR3 제조: NXP Semiconductors 및 MRF8S9102NR3 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

NXP Semiconductors
MRFE6S9160HSR3 MRFE6S9160HSR3 - 160W RF Power LDMOS 880MHz | NXP

MRFE6S9160HSR3 - 160W RF Power LDMOS 880MHz | NXP

MRFE6S9160HSR3 ✓ 활성
NXP Semiconductors
MRF8S9102NR3 MRF8S9102NR3 - 28W RF Power MOSFET 865-960MHz | NXP

MRF8S9102NR3 - 28W RF Power MOSFET 865-960MHz | NXP

MRF8S9102NR3 ✓ 활성

사양 비교

파라미터 MRFE6S9160HSR3 MRF8S9102NR3
브랜드 NXP Semiconductors NXP Semiconductors
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $55.20 $24.10
Manufacturer NXP Semiconductors (formerly Freescale) NXP Semiconductors (formerly Freescale)
Part Number MRFE6S9160HSR3 —
트랜지스터 유형 LDMOS, N-Channel, Enhancement-Mode, Lateral N-Channel Lateral Enhancement-Mode MOSFET
Drain-Source Voltage (VDSS) 66 V (rated) —
드레인-소스 항복 전압 [DATA_NEEDED: V(BR)DSS minimum] —
Operating Drain Voltage (VDD) 28 V (typical bias) —
Continuous Drain Current (ID) 10 uA [leakage spec context, ID max [DATA_NEEDED]] —
Quiescent Current (IDQ) 1200 mA —
Operating Frequency Range 865 MHz to 960 MHz 865 MHz to 960 MHz
Test Frequency 880 MHz 920 MHz
Output Power (Pout) Avg. 35 W (under N-CDMA drive, 9.8 dB PAR) —
Output Power Peak 160 W (peak envelope) —
Power Gain 21 dB (typical at 880 MHz) —
Drain Efficiency 31% (typical at 35 W avg.) —
ACPR at 750 kHz Offset -46.8 dBc —
패키지 NI-780S (NI780HS) ceramic, bolted flange OM-780-2 (3-pin ceramic, flange mount)
실장 유형 Through-hole / chassis mount with flange Chassis / flange mount with bolt-down thermal pad
RoHS 상태 [DATA_NEEDED: confirm via latest distributor listing] [DATA_NEEDED: rohs compliance]
Technology HV6E (6th gen high-voltage LDMOS) —
Part Family — MRF8S9102N / HV8 series
Application — RF Power Amplifier, W-CDMA base station
Drain-Source Operating Voltage (VDS) — 28 V (typical test condition)
Drain-Source Breakdown Voltage (VDSS) — 70 V (max)
Average Output Power (POUT) — 28 W
Drain Current (ID) at bias — 750 mA
Power Gain (Gp) — 23.1 dB
Modulation Format — Single W-CDMA (also Class AB/C capable)
핀 수 — 3
Operating Mode — Class AB or Class C

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