RTAX1000SL-CQ352V vs RTAX2000D-1CQ352V 比較

詳細な並列比較: RTAX1000SL-CQ352V メーカー: Microchip Technology および RTAX2000D-1CQ352V メーカー: Microchip Technology。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。

Microchip Technology
RTAX1000SL-CQ352V RTAX1000SL-CQ352V - 1M-Gate Rad-Tolerant FPGA | Microchip

RTAX1000SL-CQ352V - 1M-Gate Rad-Tolerant FPGA | Microchip

RTAX1000SL-CQ352V ✓ 生産中
Microchip Technology
RTAX2000D-1CQ352V RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000D-1CQ352V ✓ 生産中

仕様比較

パラメータ RTAX1000SL-CQ352V RTAX2000D-1CQ352V
ブランド Microchip Technology Microchip Technology
カテゴリ FPGA & CPLD FPGA & CPLD
ライフサイクル状態 有効 有効
在庫状況 In Stock In Stock
単価(USD) $0.00 $3,950.00
Family RTAX-SL (RTAX-S/SL Radiation-Tolerant FPGAs) —
Equivalent System Gates 1,000,000 —
CLBs (Logic Modules) 12,096 —
Logic Cells 18,144 29,568
Maximum Toggle Frequency 581 MHz —
Process Technology 0.15 um CMOS —
Core Voltage 1.5 V —
Programming Technology Antifuse (one-time programmable) —
Radiation Tolerance Radiation-tolerant, space-flight qualified family —
Power-Up Behavior Live at power-up (non-volatile) —
Configuration Upset Immunity No SEU in configuration memory (antifuse) —
Embedded Memory Embedded SRAM with built-in FIFO control logic Up to 540 kbits with optional EDAC protection
パッケージ 352-pin Ceramic CQFP (CQ352V) CQFP-352 (CQ352), ceramic
実装タイプ Surface Mount Surface Mount
動作温度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: Operating Temperature]
I/O Voltage [DATA_NEEDED: I/O bank voltage range] —
Total Ionizing Dose (TID) [DATA_NEEDED: TID rating in krad (Si)] —
MSLレベル [DATA_NEEDED: moisture sensitivity level] —
RoHS ステータス [DATA_NEEDED: RoHS compliance status] [DATA_NEEDED: RoHS Status]
Estimated Equivalent Gates per CLB [DATA_NEEDED: gates-per-CLB ratio] —
Equivalent Gates — 2,000,000
CLBs — 19,712
Core Supply Voltage — 1.425 V to 1.575 V (nominal 1.5 V)
DSP Mathblocks — Up to 120
DSP MAC Performance — 125 MHz, 18-bit x 18-bit multiply-accumulate
Technology — Digital CMOS, antifuse (nonvolatile)
Total Ionizing Dose (Functional) — 300 krad (Si)
Total Ionizing Dose — 200 krad (Si)
Configuration — Live at power-up, single-chip, no external configuration device
Speed Grade — -1
Screening — RTAX-D (Condition A, tighter ICCA limits at 125C final electrical test)

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