RTAX1000SL-CQ352V vs RTAX2000D-1CQ352V 비교

다음의 상세 나란히 비교: RTAX1000SL-CQ352V 제조: Microchip Technology 및 RTAX2000D-1CQ352V 제조: Microchip Technology. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Microchip Technology
RTAX1000SL-CQ352V RTAX1000SL-CQ352V - 1M-Gate Rad-Tolerant FPGA | Microchip

RTAX1000SL-CQ352V - 1M-Gate Rad-Tolerant FPGA | Microchip

RTAX1000SL-CQ352V ✓ 활성
Microchip Technology
RTAX2000D-1CQ352V RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000D-1CQ352V ✓ 활성

사양 비교

파라미터 RTAX1000SL-CQ352V RTAX2000D-1CQ352V
브랜드 Microchip Technology Microchip Technology
카테고리 FPGA & CPLD FPGA & CPLD
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.00 $3,950.00
Family RTAX-SL (RTAX-S/SL Radiation-Tolerant FPGAs) —
Equivalent System Gates 1,000,000 —
CLBs (Logic Modules) 12,096 —
Logic Cells 18,144 29,568
Maximum Toggle Frequency 581 MHz —
Process Technology 0.15 um CMOS —
Core Voltage 1.5 V —
Programming Technology Antifuse (one-time programmable) —
Radiation Tolerance Radiation-tolerant, space-flight qualified family —
Power-Up Behavior Live at power-up (non-volatile) —
Configuration Upset Immunity No SEU in configuration memory (antifuse) —
Embedded Memory Embedded SRAM with built-in FIFO control logic Up to 540 kbits with optional EDAC protection
패키지 352-pin Ceramic CQFP (CQ352V) CQFP-352 (CQ352), ceramic
실장 유형 Surface Mount Surface Mount
동작 온도 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: Operating Temperature]
I/O Voltage [DATA_NEEDED: I/O bank voltage range] —
Total Ionizing Dose (TID) [DATA_NEEDED: TID rating in krad (Si)] —
MSL 레벨 [DATA_NEEDED: moisture sensitivity level] —
RoHS 상태 [DATA_NEEDED: RoHS compliance status] [DATA_NEEDED: RoHS Status]
Estimated Equivalent Gates per CLB [DATA_NEEDED: gates-per-CLB ratio] —
Equivalent Gates — 2,000,000
CLBs — 19,712
Core Supply Voltage — 1.425 V to 1.575 V (nominal 1.5 V)
DSP Mathblocks — Up to 120
DSP MAC Performance — 125 MHz, 18-bit x 18-bit multiply-accumulate
Technology — Digital CMOS, antifuse (nonvolatile)
Total Ionizing Dose (Functional) — 300 krad (Si)
Total Ionizing Dose — 200 krad (Si)
Configuration — Live at power-up, single-chip, no external configuration device
Speed Grade — -1
Screening — RTAX-D (Condition A, tighter ICCA limits at 125C final electrical test)

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