RTAX1000SL-CQ352V vs RTAX2000D-1CQ352V 对比
详细并排对比 RTAX1000SL-CQ352V 出自 Microchip Technology 和 RTAX2000D-1CQ352V 出自 Microchip Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Microchip Technology
RTAX1000SL-CQ352V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000SL-CQ352V ✓ 量产中Microchip Technology
RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000D-1CQ352V ✓ 量产中规格对比
| 参数 | RTAX1000SL-CQ352V | RTAX2000D-1CQ352V |
|---|---|---|
| 品牌 | Microchip Technology | Microchip Technology |
| 分类 | FPGA & CPLD | FPGA & CPLD |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.00 | $3,950.00 |
| Family | RTAX-SL (RTAX-S/SL Radiation-Tolerant FPGAs) | — |
| Equivalent System Gates | 1,000,000 | — |
| CLBs (Logic Modules) | 12,096 | — |
| Logic Cells | 18,144 | 29,568 |
| Maximum Toggle Frequency | 581 MHz | — |
| Process Technology | 0.15 um CMOS | — |
| Core Voltage | 1.5 V | — |
| Programming Technology | Antifuse (one-time programmable) | — |
| Radiation Tolerance | Radiation-tolerant, space-flight qualified family | — |
| Power-Up Behavior | Live at power-up (non-volatile) | — |
| Configuration Upset Immunity | No SEU in configuration memory (antifuse) | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Up to 540 kbits with optional EDAC protection |
| 封装 | 352-pin Ceramic CQFP (CQ352V) | CQFP-352 (CQ352), ceramic |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature] |
| I/O Voltage | [DATA_NEEDED: I/O bank voltage range] | — |
| Total Ionizing Dose (TID) | [DATA_NEEDED: TID rating in krad (Si)] | — |
| MSL 等级 | [DATA_NEEDED: moisture sensitivity level] | — |
| RoHS 状态 | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: RoHS Status] |
| Estimated Equivalent Gates per CLB | [DATA_NEEDED: gates-per-CLB ratio] | — |
| Equivalent Gates | — | 2,000,000 |
| CLBs | — | 19,712 |
| Core Supply Voltage | — | 1.425 V to 1.575 V (nominal 1.5 V) |
| DSP Mathblocks | — | Up to 120 |
| DSP MAC Performance | — | 125 MHz, 18-bit x 18-bit multiply-accumulate |
| Technology | — | Digital CMOS, antifuse (nonvolatile) |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Total Ionizing Dose | — | 200 krad (Si) |
| Configuration | — | Live at power-up, single-chip, no external configuration device |
| Speed Grade | — | -1 |
| Screening | — | RTAX-D (Condition A, tighter ICCA limits at 125C final electrical test) |