SCT4062KRC15 vs IMW120R045M1H 比較
詳細な並列比較: SCT4062KRC15 メーカー: ROHM Semiconductor および IMW120R045M1H メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | SCT4062KRC15 | IMW120R045M1H |
|---|---|---|
| ブランド | ROHM Semiconductor | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $7.65 | $0.00 |
| Manufacturer | ROHM Semiconductor | — |
| Product Family | 4th-Gen SiC Trench MOSFET | — |
| トランジスタタイプ | N-Channel SiC MOSFET | — |
| Drain-Source Voltage (V_DSS) | 1200 V | — |
| Continuous Drain Current (I_D, Tc) | 26 A | — |
| R_DS(on) (typ) | 62 mΩ @ V_GS = 18 V | — |
| Gate-Source Voltage (V_GS) Drive | 15 V nominal, ±18 V max | — |
| Technology | Silicon Carbide (SiC), trench-gate | CoolSiC SiC Trench MOSFET |
| パッケージ | TO-247-4L (4-pin through-hole, Kelvin source) | PG-TO247-3-41 (TO-247-3) |
| Power Dissipation (P_D, Tc=25°C) | 115 W | — |
| 実装タイプ | Through-Hole (THD) | Through Hole |
| 動作接合温度 | -55 °C to +175 °C | — |
| Configuration | Single N-Channel | Single N-channel with built-in body diode |
| Gate-Drive Logic | Standard SiC drive (15 V V_GS) | — |
| Short-Circuit Withstand | Yes (per datasheet) | — |
| RoHS ステータス | Compliant | — |
| Drain-Source Voltage (VDS) | — | 1200 V |
| On-Resistance (RDS(on)) | — | 45 mOhm at Tj = 25C |
| Continuous Drain Current (ID) | — | 52 A at Tc = 25C |
| 消費電力（Ptot） | — | 228 W at Tc = 25C |
| Gate Threshold Voltage (VGS(th)) | — | 4.5 V |
| Recommended Turn-On Gate Voltage | — | 15 V |
| Turn-Off Gate Voltage | — | 0 V |
| Qualification | — | Industrial grade |
| Gate Drive Compatibility | — | IGBT-compatible gate drive |
| dv/dt Control | — | Fully controllable via gate resistor |
| Body Diode | — | Robust, suitable for synchronous rectification |
| Turn-Off Switching Losses | — | Temperature independent |
| Manufacturer Recommended Operating Margin | — | Do not exceed 80% of maximum ratings for optimum lifetime |