SCT4062KRC15 vs IMW120R045M1H 비교
다음의 상세 나란히 비교: SCT4062KRC15 제조: ROHM Semiconductor 및 IMW120R045M1H 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | SCT4062KRC15 | IMW120R045M1H |
|---|---|---|
| 브랜드 | ROHM Semiconductor | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $7.65 | $0.00 |
| Manufacturer | ROHM Semiconductor | — |
| Product Family | 4th-Gen SiC Trench MOSFET | — |
| 트랜지스터 유형 | N-Channel SiC MOSFET | — |
| Drain-Source Voltage (V_DSS) | 1200 V | — |
| Continuous Drain Current (I_D, Tc) | 26 A | — |
| R_DS(on) (typ) | 62 mΩ @ V_GS = 18 V | — |
| Gate-Source Voltage (V_GS) Drive | 15 V nominal, ±18 V max | — |
| Technology | Silicon Carbide (SiC), trench-gate | CoolSiC SiC Trench MOSFET |
| 패키지 | TO-247-4L (4-pin through-hole, Kelvin source) | PG-TO247-3-41 (TO-247-3) |
| Power Dissipation (P_D, Tc=25°C) | 115 W | — |
| 실장 유형 | Through-Hole (THD) | Through Hole |
| 동작 접합 온도 | -55 °C to +175 °C | — |
| Configuration | Single N-Channel | Single N-channel with built-in body diode |
| Gate-Drive Logic | Standard SiC drive (15 V V_GS) | — |
| Short-Circuit Withstand | Yes (per datasheet) | — |
| RoHS 상태 | Compliant | — |
| Drain-Source Voltage (VDS) | — | 1200 V |
| On-Resistance (RDS(on)) | — | 45 mOhm at Tj = 25C |
| Continuous Drain Current (ID) | — | 52 A at Tc = 25C |
| 전력 손실 (Ptot) | — | 228 W at Tc = 25C |
| Gate Threshold Voltage (VGS(th)) | — | 4.5 V |
| Recommended Turn-On Gate Voltage | — | 15 V |
| Turn-Off Gate Voltage | — | 0 V |
| Qualification | — | Industrial grade |
| Gate Drive Compatibility | — | IGBT-compatible gate drive |
| dv/dt Control | — | Fully controllable via gate resistor |
| Body Diode | — | Robust, suitable for synchronous rectification |
| Turn-Off Switching Losses | — | Temperature independent |
| Manufacturer Recommended Operating Margin | — | Do not exceed 80% of maximum ratings for optimum lifetime |