SCT4062KRC15 vs IMW120R045M1H 对比
详细并排对比 SCT4062KRC15 出自 ROHM Semiconductor 和 IMW120R045M1H 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | SCT4062KRC15 | IMW120R045M1H |
|---|---|---|
| 品牌 | ROHM Semiconductor | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $7.65 | $0.00 |
| Manufacturer | ROHM Semiconductor | — |
| Product Family | 4th-Gen SiC Trench MOSFET | — |
| 晶体管类型 | N-Channel SiC MOSFET | — |
| Drain-Source Voltage (V_DSS) | 1200 V | — |
| Continuous Drain Current (I_D, Tc) | 26 A | — |
| R_DS(on) (typ) | 62 mΩ @ V_GS = 18 V | — |
| Gate-Source Voltage (V_GS) Drive | 15 V nominal, ±18 V max | — |
| Technology | Silicon Carbide (SiC), trench-gate | CoolSiC SiC Trench MOSFET |
| 封装 | TO-247-4L (4-pin through-hole, Kelvin source) | PG-TO247-3-41 (TO-247-3) |
| Power Dissipation (P_D, Tc=25°C) | 115 W | — |
| 安装类型 | Through-Hole (THD) | Through Hole |
| 工作结温 | -55 °C to +175 °C | — |
| Configuration | Single N-Channel | Single N-channel with built-in body diode |
| Gate-Drive Logic | Standard SiC drive (15 V V_GS) | — |
| Short-Circuit Withstand | Yes (per datasheet) | — |
| RoHS 状态 | Compliant | — |
| Drain-Source Voltage (VDS) | — | 1200 V |
| On-Resistance (RDS(on)) | — | 45 mOhm at Tj = 25C |
| Continuous Drain Current (ID) | — | 52 A at Tc = 25C |
| 功耗（Ptot） | — | 228 W at Tc = 25C |
| Gate Threshold Voltage (VGS(th)) | — | 4.5 V |
| Recommended Turn-On Gate Voltage | — | 15 V |
| Turn-Off Gate Voltage | — | 0 V |
| Qualification | — | Industrial grade |
| Gate Drive Compatibility | — | IGBT-compatible gate drive |
| dv/dt Control | — | Fully controllable via gate resistor |
| Body Diode | — | Robust, suitable for synchronous rectification |
| Turn-Off Switching Losses | — | Temperature independent |
| Manufacturer Recommended Operating Margin | — | Do not exceed 80% of maximum ratings for optimum lifetime |