STB80NF55-08AG vs STB80NF55-06T4 比較
詳細な並列比較: STB80NF55-08AG メーカー: STMicroelectronics および STB80NF55-06T4 メーカー: STMicroelectronics。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
STMicroelectronics
STB80NF55-08AG - 55V 80A Automotive N-Channel MOSFET | STMicroelectronics
STB80NF55-08AG ✓ 生産中STMicroelectronics
STB80NF55-06T4 - 80A, 55V N-Channel Power MOSFET | STMicroelectronics
STB80NF55-06T4 ✓ 生産中仕様比較
| パラメータ | STB80NF55-08AG | STB80NF55-06T4 |
|---|---|---|
| ブランド | STMicroelectronics | STMicroelectronics |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.81 | $1.38 |
| Polarity | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) | 80 A (Tc) | — |
| On-Resistance (RDS(on)) | 6.5 mΩ typ | — |
| Power Dissipation (PD) | 300 W (Tc) | 300 W |
| Gate Charge (Qg) | [DATA_NEEDED: gate charge value] | 80 nC (typ) |
| Input Capacitance (Ciss) | [DATA_NEEDED: input capacitance value] | 4500 pF (typ) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage value] | — |
| Avalanche Energy (EAS) | 100% avalanche tested | — |
| 動作温度範囲 | -55°C to +175°C | -55°C to +175°C |
| パッケージ | D2PAK (TO-263) | D2PAK (TO-263) |
| 実装タイプ | Surface Mount | Surface Mount |
| Automotive Grade | AEC-Q101 qualified | — |
| RoHS ステータス | Compliant | Compliant |
| Technology | STripFET | — |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at 25°C | — | 80 A |
| Continuous Drain Current (ID) at 100°C | — | 56 A |
| Pulsed Drain Current (IDM) | — | 320 A |
| Gate-Source Voltage (VGS) | — | ±20 V |
| On-Resistance (RDS(on)) at VGS=10V | — | 6.5 mΩ (typ), 8 mΩ (max) |
| Output Capacitance (Coss) | — | 700 pF (typ) |
| Reverse Transfer Capacitance (Crss) | — | 250 pF (typ) |
| ハロゲンフリー | — | Yes |