UCC5320 vs UCC5310MCDR 比較
詳細な並列比較: UCC5320 メーカー: Texas Instruments および UCC5310MCDR メーカー: Texas Instruments。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Texas Instruments
UCC5310MCDR - 4.3A Isolated Gate Driver, 3kVrms, SOIC-8 | Texas Instruments
UCC5310MCDR ✓ 生産中仕様比較
| パラメータ | UCC5320 | UCC5310MCDR |
|---|---|---|
| ブランド | Texas Instruments | Texas Instruments |
| カテゴリ | Power MOSFET Drivers | Power MOSFET Drivers |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.85 | $1.55 |
| Number of Channels | 1 | 1 |
| Peak Source Current | 4.3 A | 4.3 A |
| Peak Sink Current | 4.5 A | 2.2 A |
| Isolation Voltage (D package) | 3000 Vrms (basic) | — |
| Isolation Voltage (DWV package) | 5000 Vrms (reinforced) | — |
| Primary Supply Voltage (VDD1) | 3 V to 5.5 V | — |
| Secondary Supply Voltage (VDD2) | 9.5 V to 33 V | — |
| 出力構成 | Split output (UCC5320S) or single (UCC5320E) | — |
| UVLO Reference | VDD2 referenced (E variant) or GND2 referenced (EC variant) | — |
| Propagation Delay | [DATA_NEEDED: propagation delay ns] | [DATA_NEEDED: typical propagation delay] |
| Common-Mode Transient Immunity (CMTI) | >= 100 kV/us | — |
| 動作温度範囲 | -40C to +125C (junction to +150C) | — |
| Package Options | 8-pin SOIC (D) or 8-pin wide-body SOIC (DWV) | — |
| Supported Switch Types | MOSFET, IGBT, SiC MOSFET, GaN FET | — |
| 実装タイプ | Surface Mount | Surface Mount |
| RoHS ステータス | Compliant | Compliant |
| Isolation Voltage (rms) | — | 3 kVrms |
| Input VCC Range | — | 3 V to 15 V |
| Driver VDD Range | — | Up to 30 V |
| UVLO Threshold | — | 12 V (with respect to IGBT emitter, M-variant) |
| Miller Clamp | — | Integrated |
| Common-Mode Transient Immunity | — | [DATA_NEEDED: CMTI value] |
| 動作温度 | — | -40C to +125C |
| パッケージ | — | SOIC-8 (D) |
| Pins | — | 8 |
| MSLレベル | — | [DATA_NEEDED: MSL rating] |