UCC5320 vs UCC5310MCDR 비교
다음의 상세 나란히 비교: UCC5320 제조: Texas Instruments 및 UCC5310MCDR 제조: Texas Instruments. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Texas Instruments
UCC5310MCDR - 4.3A Isolated Gate Driver, 3kVrms, SOIC-8 | Texas Instruments
UCC5310MCDR ✓ 활성사양 비교
| 파라미터 | UCC5320 | UCC5310MCDR |
|---|---|---|
| 브랜드 | Texas Instruments | Texas Instruments |
| 카테고리 | Power MOSFET Drivers | Power MOSFET Drivers |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.85 | $1.55 |
| Number of Channels | 1 | 1 |
| Peak Source Current | 4.3 A | 4.3 A |
| Peak Sink Current | 4.5 A | 2.2 A |
| Isolation Voltage (D package) | 3000 Vrms (basic) | — |
| Isolation Voltage (DWV package) | 5000 Vrms (reinforced) | — |
| Primary Supply Voltage (VDD1) | 3 V to 5.5 V | — |
| Secondary Supply Voltage (VDD2) | 9.5 V to 33 V | — |
| 출력 구성 | Split output (UCC5320S) or single (UCC5320E) | — |
| UVLO Reference | VDD2 referenced (E variant) or GND2 referenced (EC variant) | — |
| Propagation Delay | [DATA_NEEDED: propagation delay ns] | [DATA_NEEDED: typical propagation delay] |
| Common-Mode Transient Immunity (CMTI) | >= 100 kV/us | — |
| 동작 온도 범위 | -40C to +125C (junction to +150C) | — |
| Package Options | 8-pin SOIC (D) or 8-pin wide-body SOIC (DWV) | — |
| Supported Switch Types | MOSFET, IGBT, SiC MOSFET, GaN FET | — |
| 실장 유형 | Surface Mount | Surface Mount |
| RoHS 상태 | Compliant | Compliant |
| Isolation Voltage (rms) | — | 3 kVrms |
| Input VCC Range | — | 3 V to 15 V |
| Driver VDD Range | — | Up to 30 V |
| UVLO Threshold | — | 12 V (with respect to IGBT emitter, M-variant) |
| Miller Clamp | — | Integrated |
| Common-Mode Transient Immunity | — | [DATA_NEEDED: CMTI value] |
| 동작 온도 | — | -40C to +125C |
| 패키지 | — | SOIC-8 (D) |
| Pins | — | 8 |
| MSL 레벨 | — | [DATA_NEEDED: MSL rating] |