UCC5320 - 4.3A Isolated Gate Driver | Texas Instruments
部品番号: UCC5320 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $3.45 | $3.45 |
| 10 | $3.1 | $31.00 |
| 100 | $2.62 | $262.00 |
| 500 | $2.21 | $1,105.00 |
| 1,000 | $1.85 | $1,850.00 |
UCC5320 概要
A galvanically isolated gate driver is a gate drive circuit that uses an isolation barrier (capacitive or magnetic) to separate the low-voltage control domain (PWM logic, MCU) from the high-voltage power domain (MOSFET/IGBT gate). Isolation gate drivers sit in the power management IC hierarchy: isolated gate driver > gate driver > driver IC > power management IC. Their primary role is to break ground loops, provide level shifting, and protect low-voltage controllers from high-voltage transients propagated by rapidly switching power devices.
The UCC5320 delivers up to 4.3A peak source and 4.5A peak sink gate drive current, with a wide drive supply range of 9.5V to 33V on the secondary side. The split output variant (UCC5320S) independently controls turn-on and turn-off currents, allowing designers to tailor switching loss and EMI. Internal undervoltage lockout referenced to GND2 ensures gate drive signals are only produced once the driver supply is healthy. The device is rated for -40C to +150C junction temperature.
Architecturally, the UCC5320 uses TI's capacitive isolation technology to achieve 3-kVRMS (D package) or 5-kVRMS (DWV package) basic or reinforced isolation. The wide-body DWV package is intended for reinforced isolation per IEC 60747-17/VDE 0884-11. Internal common-mode transient immunity (CMTI) exceeds 100 kV/µs, ensuring reliable operation in noisy motor drive and Class-D audio amplifier environments. The basic isolation D variant shares the same pinout with the reinforced DWV variant, enabling PCB layout reuse between isolation grades.
Typical applications include industrial motor drives (AC motor, BLDC, PMSM), photovoltaic string inverters, isolated DC-DC converters, EV traction inverters, and Class-D audio amplifiers. The split output variant is particularly valuable in motor drives where controlled dV/dt via gate resistance tuning is critical to manage EMI and switching loss. The wide 9.5V to 33V secondary supply range also allows direct drive of SiC MOSFETs requiring 18V gate drive.
When designing with this device, ensure adequate decoupling on both primary (VDD1, 3V to 5.5V) and secondary (VDD2, 9.5V to 33V) supplies with 0.1 µF ceramic capacitors placed as close to the IC as possible. The split output (UCC5320S) needs separate turn-on and turn-off gate resistors if independent rise/fall time control is desired. Verify creepage and clearance on the PCB layout for the DWV package to achieve the rated 5-kVRMS reinforced isolation.
This page synthesizes current distributor pricing, drop-in same-family alternatives, application circuit notes, and design considerations beyond the manufacturer datasheet, helping engineers select and source the right UCC5320 variant for their isolated gate drive needs.
ドロップイン代替品: UCC5320 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: UCC5320 （同一形状・フットプリント） — 相違点: Common-Mode Transient Immunity (CMTI), Operating Temperature Range, Output Configuration, Peak Sink Current.
クイック比較ツール — 並列比較する代替部品を選択:
UCC5320SCDWVR
✅ ドロップイン📋 参考代替品（カタログ未掲載）
UCC5320ECDR
✅ ドロップイン📋 参考代替品（カタログ未掲載）
UCC5310MCDR
✅ ドロップイン✓ 在庫あり
$1.55 / 個
データシートを見る →UCC5350
✅ ドロップイン📋 参考代替品（カタログ未掲載）
UCC5390ECD
✅ ドロップイン✓ 在庫あり
$1.12 / 個
データシートを見る →UCC5320 最大定格＆電気的特性
| Number of Channels | 1 |
| Peak Source Current | 4.3 A |
| Peak Sink Current | 4.5 A |
| Isolation Voltage (D package) | 3000 Vrms (basic) |
| Isolation Voltage (DWV package) | 5000 Vrms (reinforced) |
| Primary Supply Voltage (VDD1) | 3 V to 5.5 V |
| Secondary Supply Voltage (VDD2) | 9.5 V to 33 V |
| 出力構成 | Split output (UCC5320S) or single (UCC5320E) |
| UVLO Reference | VDD2 referenced (E variant) or GND2 referenced (EC variant) |
| Common-Mode Transient Immunity (CMTI) | >= 100 kV/us |
| 動作温度範囲 | -40C to +125C (junction to +150C) |
| Package Options | 8-pin SOIC (D) or 8-pin wide-body SOIC (DWV) |
| Supported Switch Types | MOSFET, IGBT, SiC MOSFET, GaN FET |
| 実装タイプ | Surface Mount |
| RoHS ステータス | Compliant |
UCC5320 ピン構成
| ピン 1 | VDD1 — Primary-side supply voltage (3V to 5.5V) |
| ピン 2 | VDD2 — Secondary-side supply voltage (9.5V to 33V) |
| ピン 3 | GND2 — Secondary-side ground reference |
| ピン 4 | GND1 — Primary-side ground reference |
| ピン 5 | IN+ — Non-inverting PWM input (primary) |
| ピン 6 | OUT — Gate drive output to power switch gate |
| ピン 7 | OUTL — Split-output low (sink) - UCC5320S variants only |
| ピン 8 | IN- — Inverting PWM input (primary) |
主な用途
UCC5320 の用途: 6 件s: Industrial Motor Drive (BLDC/PMSM), Photovoltaic String Inverter, Isolated DC-DC Converter, EV Traction Inverter Auxiliary Gate Drive, Class-D Audio Amplifier, Industrial Power Supply (Telecom Rectifier).
Industrial Motor Drive (BLDC/PMSM)
The UCC5320 fits three-phase BLDC and PMSM motor drives where reinforced isolation between the MCU/PWM domain and the inverter bridge is required for functional safety. With 4.3A peak source and 4.5A peak sink current at 9.5V to 33V secondary supply, the device directly drives sub-50A MOSFETs or small IGBTs without an external booster. The split-output UCC5320S variant allows independent gate resistors on turn-on and turn-off paths, letting engineers tune dV/dt to manage EMI and bearing currents common in variable frequency drives. CMTI of >= 100 kV/us ensures reliable operation across the fast dV/dt transitions of the inverter bridge.
おすすめ
Photovoltaic String Inverter
In PV string inverter designs, the UCC5320 provides reinforced 5-kVRMS isolation (DWV package) between the DC-DC boost stage and the controller, satisfying IEC 62109 safety requirements. The wide 9.5V to 33V secondary supply accommodates 15V-18V SiC MOSFET gate drive directly, eliminating an auxiliary LDO. With 100 kV/us CMTI, the device tolerates the high dV/dt of the boost and full-bridge stages, preventing false triggering that could otherwise cause shoot-through. The wide-body SOIC-8 (DWV) package provides the required 8 mm creepage for high-voltage DC bus operation up to 1500V.
おすすめ
Isolated DC-DC Converter
For phase-shifted full-bridge or dual-active-bridge (DAB) DC-DC converters, the UCC5320 drives the primary-side MOSFETs from a digital isolator's logic output. With 4.3A source / 4.5A sink current capability, the driver handles MOSFETs with Qg up to 100 nC at switching frequencies up to 1 MHz. The 3-kVRMS (D) or 5-kVRMS (DWV) isolation rating supports telecom and industrial 48V bus converter designs. The split-output variant (UCC5320S) is particularly valuable for resonant converters where controlled turn-on and turn-off dV/dt reduces circulating current losses.
おすすめ
EV Traction Inverter Auxiliary Gate Drive
In EV traction inverter auxiliary sections, the UCC5320 drives SiC MOSFETs in the on-board charger (OBC) and high-voltage DC-DC stages. The wide secondary supply range (9.5V to 33V) supports both 15V and 18V SiC gate drive standards without an additional LDO. Reinforced isolation (DWV package) provides the safety isolation required between the low-voltage domain and 400V-800V bus. The 4.3A peak source current is sufficient for 750V-1200V SiC MOSFETs in OBC applications, while the small SOIC-8 footprint simplifies high-density PCB layouts.
おすすめ
Class-D Audio Amplifier
In high-power Class-D audio amplifiers, the UCC5320 drives the output stage MOSFETs while providing isolation between the analog input section and the high-current switching output. With 4.3A peak drive current and high CMTI (>= 100 kV/us), the device handles the fast dV/dt transitions of 100W-500W Class-D amplifiers without injecting switching noise into the audio path. The wide-body DWV package variant provides the reinforced isolation required by IEC 62368-1 for audio/video equipment. Low propagation delay distortion preserves audio fidelity in high-end amplifier designs.
おすすめ
Industrial Power Supply (Telecom Rectifier)
In -48V telecom rectifier and industrial power supply designs, the UCC5320 drives the primary-side MOSFETs of the PFC and isolated DC-DC stages. The reinforced 5-kVRMS isolation (DWV) variant supports the safety requirements of IEC 62368-1 for telecom equipment. With 9.5V-33V secondary supply, the driver works with standard 12V gate drive MOSFETs as well as SiC variants for high-frequency designs. The 4.3A peak source current minimizes switching loss in high-frequency (100 kHz-500 kHz) PFC and LLC topologies, improving overall converter efficiency.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: UCC5320 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | UCC5320SCDWVR | UCC5320ECDR | UCC5310 | UCC5350 | UCC5390 |
|---|---|---|---|---|---|---|
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Package | SOIC-8 (D) or SOIC-8 wide-body (DWV) | SOIC-8 wide-body (DWV) - same | SOIC-8 (D) - same | SOIC-8 (D) - same | SOIC-8 wide-body (DWV) - same | SOIC-8 wide-body (DWV) - same |
| Peak Source Current | 4.3 A | 4.3 A | 4.3 A | 2.0 A (-54%) | 10 A (+133%) | 10 A (+133%) |
| Isolation Voltage | 3 kVrms (D) / 5 kVrms (DWV) | 5 kVrms | 3 kVrms | 3 kVrms | 3 kVrms (D) / 5 kVrms (DWV) | 5 kVrms |
| Output Configuration | Single (UCC5320) / Split (UVNO) | Split | Single, GND2-referenced UVLO | Single | Split | Split |
| Secondary Supply (VDD2) | 9.5 V to 33 V | 9.5 V to 33 V | 9.5 V to 33 V | 9.5 V to 33 V | 9.5 V to 33 V | 9.5 V to 33 V |
| CMTI | >= 100 kV/us | >= 100 kV/us | >= 100 kV/us | >= 100 kV/us | >= 100 kV/us | >= 100 kV/us |
| Typical Unit Price (qty 1) | $3.45 | $3.85 (+12%) | $3.45 (0%) | $2.80 (-19%) | $4.50 (+30%) | $4.80 (+39%) |
主な差別化要因
- Dual package option with same pinout - 3 kV and 5 kV isolation grades （vs UCC5310 (3 kV only))
- Split-output option (UCC5320S) for independent rise/fall control （vs UCC5310)
- Versatile UVLO options referenced to VDD2 or GND2 （vs UCC5310)
設計ノート
Estimated: Place a 0.1 uF ceramic decoupling capacitor on VDD1 (pin 1) and another 0.1 uF ceramic plus 10 uF bulk capacitor on VDD2 (pin 2), both within 2 mm of the IC pins. The primary side draws 1-2 mA quiescent current, while the secondary side gate drive current depends on the MOSFET/IGBT total gate charge and switching frequency (estimated Qg x fsw). For a 100 nC MOSFET at 100 kHz, secondary average current is approximately 10 mA - the 10 uF bulk maintains stable VDD2 during high transient loads.
For the SOIC-8 wide-body (DWV) package targeting 5-kVRMS reinforced isolation, maintain at least 8 mm creepage and 8 mm clearance between primary-side and secondary-side copper traces. Per the TI UCC53x0 datasheet, the DWV package body provides internal 8 mm creepage; PCB design must match this on outer layers. Avoid routing any primary or secondary trace under the package body or between pins to preserve isolation barrier integrity. Use slot (cutout) in the PCB if needed to extend creepage on outer layers.
Do not exceed the absolute maximum secondary supply voltage of 33V on VDD2 - over-voltage events above this rating can permanently damage the gate driver output stage. Verify that your MOSFET's Vgs(max) rating (typically +/-20V for standard MOSFETs, -5V/+18V or -10V/+25V for SiC) is not exceeded by VDD2 minus the gate voltage drop. For SiC MOSFETs requiring 18V gate drive, set VDD2 to 18V with adequate headroom below the 33V absolute maximum.
コンプライアンス情報
RoHS and REACH compliant per TI product page. The DWV wide-body variant is certified to IEC 60747-17/VDE 0884-11 for reinforced isolation up to 5 kVRMS. Not AEC-Q100 qualified - for automotive applications consider dedicated automotive gate drivers in TI's portfolio.
