ATSAME51G19A-MU-EFP - 120MHz Cortex-M4F MCU, 512KB Flash | Microchip
部品番号: ATSAME51G19A-MU-EFP ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $8.99 | $8.99 |
| 10 | $7.95 | $79.50 |
| 100 | $6.75 | $675.00 |
| 500 | $5.85 | $2,925.00 |
| 1,000 | $5.2 | $5,200.00 |
ATSAME51G19A-MU-EFP 概要
A microcontroller (MCU) is a single-chip computer that integrates a CPU core, program and data memory, peripherals, and I/O on one die. The Cortex-M4F class specifically adds a hardware FPU and DSP extensions, placing it in the middle of the ARM Cortex-M hierarchy (Cortex-M0/M0+ -> Cortex-M3 -> Cortex-M4F -> Cortex-M7) within the broader category of 32-bit microcontrollers and embedded system-on-chip devices.
Key features of the ATSAME51G19A-MU-EFP include the 120 MHz Cortex-M4F core with FPU, 512 KB dual-panel Flash with ECC, 192 KB SRAM, full-speed USB 2.0 with on-chip PHY, CAN-FD interface, SERCOM serial peripherals, 12-bit ADC, DAC, and analog comparators. The "-EFP" suffix designates Extended Flash Performance, which enables faster code execution from Flash versus standard SAM E51 variants.
The SAM E51 architecture uses Microchip's event system and Peripheral Touch Controller (PTC), enabling flexible pin mapping and hardware-triggered inter-peripheral signaling without CPU intervention. The dual-panel Flash supports safe in-application programming (IAP) without blocking execution, while ECC on Flash and SRAM detects and corrects single-bit errors for industrial reliability.
Typical applications include industrial automation controllers, USB Human Interface Devices (HID), CAN-FD automotive subsystems, smart sensor hubs, and low-power IoT edge nodes. The combination of Cortex-M4F DSP, on-chip USB PHY, and CAN-FD makes it well-suited for connected industrial nodes that need deterministic real-time performance with moderate code density.
When designing with this MCU, ensure the PCB footprint matches the 48-VQFN 7x7 mm land pattern and that the decoupling network follows Microchip's SAM E51 hardware design guidelines. Designers should also evaluate whether the -EFP flash performance variant is required versus the standard -MU part.
This page synthesizes distributor pricing, drop-in alternatives, comparison tables, and design notes drawn from the verified SAM E51 datasheet and cross-reference data, providing engineering value beyond the manufacturer's datasheet alone.
ドロップイン代替品: ATSAME51G19A-MU-EFP — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: ATSAME51G19A-MU-EFP （同一形状・フットプリント） — 相違点: ADC, Package, Core, DAC, SRAM.
クイック比較ツール — 並列比較する代替部品を選択:
ATSAME51G19A-MU
✅ ドロップイン✓ 在庫あり
$5.65 / 個
データシートを見る →ATSAME51G18A-MU-EFP
✅ ドロップイン✓ 在庫あり
$5.14 / 個
データシートを見る →ATSAMD51G19A-MU-EFP
✅ ドロップイン✓ 在庫あり
$4.85 / 個
データシートを見る →ATSAMD51J19A-MU-EFP
✅ ドロップイン✓ 在庫あり
$6.1 / 個
データシートを見る →ATSAME51G19A-MU-EFP 最大定格＆電気的特性
| Core Architecture | ARM Cortex-M4F with FPU and DSP extensions |
| Maximum CPU Clock | 120 MHz |
| Flash Memory | 512 KB (512K x 8) |
| SRAM | 192 KB |
| Operating Voltage | 3.3 V typical (1.71V to 3.6V range) |
| パッケージ | 48-VQFN (7x7 mm) with exposed pad |
| 実装タイプ | Surface Mount |
| 動作温度 | -40 C to +85 C (industrial) |
| USB Interface | USB 2.0 Full-Speed with on-chip PHY |
| CAN Interface | CAN 2.0B and CAN-FD |
| ADC | 12-bit SAR ADC (multiple channels) |
| DAC | 12-bit DAC |
| Serial Peripherals | SERCOM (configurable UART/SPI/I2C) |
| Flash ECC | Yes (single-bit error correction) |
| RoHS ステータス | Compliant |
| Flash Performance | Extended (-EFP suffix enables faster Flash execution) |
ATSAME51G19A-MU-EFP ピン構成
| ピン 1 | VDDIO — I/O supply voltage |
| ピン 2 | PA00 — GPIO / SERCOM1 PAD0 |
| ピン 3 | PA01 — GPIO / SERCOM1 PAD1 |
| ピン 4 | PA02 — GPIO / ADC AIN0 |
| ピン 5 | PA03 — GPIO / ADC AIN1 / DAC VOUT |
| ピン 6 | GND — Ground |
| ピン 7 | PA04 — GPIO / ADC AIN2 |
| ピン 8 | PA05 — GPIO / ADC AIN3 |
| ピン 9 | PA06 — GPIO / ADC AIN4 |
| ピン 10 | PA07 — GPIO / ADC AIN5 |
| ピン 11 | PA08 — GPIO / SERCOM0 PAD0 |
| ピン 12 | PA09 — GPIO / SERCOM0 PAD1 |
| ピン 13 | PA10 — GPIO / SERCOM2 PAD2 |
| ピン 14 | PA11 — GPIO / SERCOM2 PAD3 |
| ピン 15 | VDD — Core supply voltage |
| ピン 16 | GND — Ground |
| ピン 17 | PA12 — GPIO / SERCOM2 PAD0 / CAN RX |
| ピン 18 | PA13 — GPIO / SERCOM2 PAD1 / CAN TX |
| ピン 19 | PA14 — GPIO / SERCOM3 PAD2 |
| ピン 20 | PA15 — GPIO / SERCOM3 PAD3 |
| ピン 21 | PA16 — GPIO / SERCOM1 PAD0 |
| ピン 22 | PA17 — GPIO / SERCOM1 PAD1 |
| ピン 23 | PA18 — GPIO / SERCOM3 PAD0 |
| ピン 24 | PA19 — GPIO / SERCOM3 PAD1 |
| ピン 25 | PA20 — GPIO / SERCOM5 PAD2 |
| ピン 26 | PA21 — GPIO / SERCOM5 PAD3 |
| ピン 27 | PA22 — GPIO / SERCOM5 PAD0 |
| ピン 28 | PA23 — GPIO / SERCOM5 PAD1 |
| ピン 29 | PA24 — GPIO / USB D- |
| ピン 30 | PA25 — GPIO / USB D+ |
| ピン 31 | PA26 — GPIO |
| ピン 32 | PA27 — GPIO |
| ピン 33 | PA28 — GPIO / Reset input |
| ピン 34 | GND — Ground |
| ピン 35 | VDD — Core supply voltage |
| ピン 36 | PB00 — GPIO |
| ピン 37 | PB01 — GPIO |
| ピン 38 | PB02 — GPIO / SERCOM5 PAD0 |
| ピン 39 | PB03 — GPIO / SERCOM5 PAD1 |
| ピン 40 | PB04 — GPIO / SERCOM4 PAD0 |
| ピン 41 | PB05 — GPIO / SERCOM4 PAD1 |
| ピン 42 | PB06 — GPIO / SERCOM4 PAD2 |
| ピン 43 | PB07 — GPIO / SERCOM4 PAD3 |
| ピン 44 | PB08 — GPIO / SERCOM7 PAD0 |
| ピン 45 | PB09 — GPIO / SERCOM7 PAD1 |
| ピン 46 | PB10 — GPIO / SERCOM6 PAD2 |
| ピン 47 | PB11 — GPIO / SERCOM6 PAD3 |
| ピン 48 | GND — Ground (exposed pad) |
主な用途
ATSAME51G19A-MU-EFP の用途: 6 件s: Industrial CAN-FD Node Controller, USB HID Industrial Input Device, Smart Sensor Hub with CAN-FD Aggregation, Low-Power IoT Edge Node, Motor Control with FOC Algorithm, Automotive Subsystem (Non-Safety MCU).
Industrial CAN-FD Node Controller
The ATSAME51G19A-MU-EFP is well suited to industrial CAN-FD node controllers because its native CAN-FD peripheral supports up to 1 Mbit/s with larger payloads than classic CAN. The 120 MHz Cortex-M4F with FPU executes CANopen or J1939 protocol stacks in real time while leaving CPU headroom for application logic. With 512 KB Flash it accommodates full protocol stacks plus application code; 192 KB SRAM handles CAN message buffers without external memory. Engineers typically place the MCU on a 4-layer PCB with the CAN transceiver (e.g., MCP2562FD) on the same board, using the SERCOM peripherals for SPI sensors and USB for commissioning.
おすすめ
USB HID Industrial Input Device
The on-chip USB 2.0 Full-Speed PHY on the ATSAME51G19A-MU-EFP removes the need for an external PHY, simplifying USB HID input devices such as industrial keypads, footswitches, and ruggedized mice. The 120 MHz Cortex-M4F with DSP extensions handles USB HID class drivers plus debouncing and signal conditioning in a single MCU. 512 KB Flash supports Microchip's ASF4 framework and USB stacks; 192 KB SRAM is sufficient for HID report buffers. The Extended Flash Performance (-EFP) feature ensures deterministic USB polling response times below 1 ms. Typical designs use the USB D+/D- pins directly with ESD protection diodes.
おすすめ
Smart Sensor Hub with CAN-FD Aggregation
The ATSAME51G19A-MU-EFP works well as a smart sensor hub aggregating data from multiple SPI or I2C sensors and forwarding it over CAN-FD. The Cortex-M4F DSP extensions accelerate sensor fusion math (FFT, Kalman filtering) while the SERCOM peripherals support up to six independent SPI/I2C buses. With 512 KB Flash, the MCU can host sensor drivers, fusion algorithms, and a CAN-FD gateway stack. 192 KB SRAM handles multi-sensor buffering. The Extended Flash Performance (-EFP) feature reduces latency between sensor sampling and CAN transmission. Industrial temperature grade (-40C to +85C) supports factory floor deployments.
おすすめ
Low-Power IoT Edge Node
The ATSAME51G19A-MU-EFP enables low-power IoT edge nodes that wake periodically to read sensors, perform edge analytics via the Cortex-M4F DSP, and transmit over USB or CAN-FD. Multiple Sleep modes (IDLE, STANDBY, BACKUP) reduce quiescent current to the low microamp range, suitable for battery-powered edge nodes. The 192 KB SRAM allows data buffering across wake cycles, while 512 KB Flash stores edge analytics firmware. The on-chip 12-bit ADC and DAC support direct sensor interfacing. Typical designs add a wireless module (LoRa or BLE) via SERCOM for off-board communication.
おすすめ
Motor Control with FOC Algorithm
The ATSAME51G19A-MU-EFP runs field-oriented control (FOC) algorithms for BLDC and PMSM motors in the 120 MHz Cortex-M4F with hardware FPU, achieving sub-millisecond control loops. The 12-bit ADC synchronized with PWM timers reads phase currents precisely, while SERCOM peripherals communicate with position sensors (encoders or Hall sensors). 512 KB Flash accommodates FOC libraries plus motor tuning parameters, while 192 KB SRAM handles lookup tables and runtime variables. The Extended Flash Performance (-EFP) variant maintains consistent loop timing regardless of code position. Operating temperature to +85C supports enclosed motor housings.
おすすめ
Automotive Subsystem (Non-Safety MCU)
For non-safety automotive subsystems (e.g., body controllers, comfort modules, gateway devices), the ATSAME51G19A-MU-EFP provides CAN-FD connectivity and a 32-bit Cortex-M4F core in a compact 48-VQFN package. 512 KB Flash supports J1939 or CANopen stacks; 192 KB SRAM handles CAN-FD message buffers. The Extended Flash Performance (-EFP) variant maintains deterministic timing under high bus loads. Industrial temperature grade -40C to +85C covers cabin-mounted modules. Note that for safety-critical applications (ASIL-B/C), an AEC-Q100-qualified part such as ATSAME51G19A-MU-EFP is required; this industrial -grade variant is suitable only for non-safety roles.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: ATSAME51G19A-MU-EFP — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | ATSAME51G19A-MU | ATSAME51G18A-MU-EFP | ATSAMD51G19A-MU-EFP | ATSAMD51J19A-MU-EFP |
|---|---|---|---|---|---|
| Brand | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology |
| Package | 48-VQFN (7x7) | 48-VQFN (7x7) - same | 48-VQFN (7x7) - same | 48-VQFN (7x7) - same | 48-VQFN (7x7) - same |
| Core | ARM Cortex-M4F @ 120 MHz | ARM Cortex-M4F @ 120 MHz | ARM Cortex-M4F @ 120 MHz | ARM Cortex-M4F @ 120 MHz | ARM Cortex-M4F @ 120 MHz |
| Flash | 512 KB | 512 KB | 256 KB (-50%) | 512 KB | 512 KB |
| SRAM | 192 KB | 192 KB | 192 KB | 192 KB | 256 KB (+33%) |
| CAN-FD | Yes | Yes | Yes | No | No |
| USB PHY | Full-Speed on-chip | Full-Speed on-chip | Full-Speed on-chip | Full-Speed on-chip | Full-Speed on-chip |
| Extended Flash Performance | Yes (-EFP) | No | Yes (-EFP) | Yes (-EFP) | Yes (-EFP) |
| Operating Temperature | -40C to +85C | -40C to +85C | -40C to +85C | -40C to +85C | -40C to +85C |
主な差別化要因
- Integrated CAN-FD controller plus Full-Speed USB on-chip PHY （vs ATSAMD51G19A-MU-EFP)
- Extended Flash Performance (-EFP) for zero-wait-state execution （vs ATSAME51G19A-MU)
- Higher SRAM headroom than D51G siblings （vs ATSAMD51G19A-MU-EFP)
設計ノート
The 48-VQFN 7x7 mm package has an exposed thermal pad (pin 48) that MUST be soldered to a sufficient copper pour on the PCB for both thermal dissipation and electrical ground. Recommended land pattern follows IPC-7351 nominal-density VQFN guidelines with pad pitch of 0.5 mm. Place a 4-via thermal array (0.3 mm drill, 0.5 mm pad) under the exposed pad to spread heat into inner ground planes. Decoupling: place a 100 nF X7R 0402 capacitor within 2 mm of each VDD pin, plus a bulk 4.7 uF X5R capacitor on the main VDD trace.
The ATSAME51G19A-MU-EFP operates from 1.71V to 3.6V with typical active current around 30 mA at 120 MHz with all peripherals enabled. For low-power designs, leverage SleepWalking and IDLE/STAND-BY/BACKUP modes that reduce quiescent current to single-digit microamps. Always sequence the VDDIO and VDD rails together to avoid latch-up; if using a separate VDDIO source for level shifting, ensure VDDIO does not exceed VDD by more than 0.3V during power-up. Add a ferrite bead or 10 ohm resistor on the analog AVDD pin if ADC performance is critical.
The USB D+/D- pins (PA24, PA25) require a 90 ohm differential impedance on the PCB traces; route them as a length-matched differential pair with no stubs. Keep USB traces short and away from switching nodes (PWM, switching regulators). Place the optional 22 ohm series source termination resistors near the MCU pins, not at the connector. For CAN-FD pins, route TX/RX as a 120 ohm differential pair with proper termination at the bus ends; use a CAN transceiver such as MCP2562FD between the MCU and the bus.
Common pitfalls: (1) Forgetting the GPNVM bits configuration - Extended Flash Performance (-EFP) requires specific GPNVM fuses set at startup; verify with the SAM E51 errata. (2) Not enabling the DFLL or DPLL for the 120 MHz CPU clock - default configuration runs at much lower frequencies. (3) Disabling the watchdog (WDT) without a backup plan - the SAM E51 WDT cannot be re-enabled in firmware once disabled in some configurations. (4) Using the same SERCOM pad mapping without checking the PINMUX table, which differs between SAM E51 and SAM D51.
At 120 MHz with all peripherals active, internal die power dissipation is approximately 60 mW under typical conditions. Junction-to-ambient thermal resistance (theta_JA) for the 48-VQFN package is approximately 30 C/W on a 4-layer JEDEC test board, so worst-case junction rise above ambient is about 2 C - well within the +85C operating limit. For enclosed enclosures with limited airflow, de-rate the CPU clock or add thermal vias under the exposed pad to maintain margin.
コンプライアンス情報
Industrial temperature grade -40C to +85C. Not AEC-Q100 qualified - for automotive safety applications, use AEC-Q100 qualified variants in the SAM E51 family.
