C3M0021120K - 1200V 21mOhm SiC MOSFET | Wolfspeed | TO-247-4
部品番号: C3M0021120K ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $18.42 | $18.42 |
| 10 | $16.58 | $165.80 |
| 100 | $14.2 | $1,420.00 |
| 500 | $12.85 | $6,425.00 |
| 1,000 | $11.6 | $11,600.00 |
C3M0021120K 概要
A silicon carbide power MOSFET is a unipolar switching transistor built on a wide-bandgap (3.26 eV) semiconductor instead of conventional silicon. Within the power-management hierarchy, it sits under power transistor -> MOSFET -> wide-bandgap semiconductor devices, and its wide bandgap allows thinner, more heavily doped drift regions, yielding lower specific on-resistance, lower switching losses, and higher junction temperature capability than comparable silicon superjunction MOSFETs.
The C3M0021120K uses Wolfspeed's 3rd-generation C3M planar SiC MOSFET technology, optimized for industrial power conversion. Key features include a 1200 V drain-source breakdown rating, 21 mOhm on-resistance for low conduction loss, and a Kelvin source connection that decouples the gate-drive return path from power-source inductance, dramatically reducing switching losses in hard-switched converters.
The separate driver-source pin is the defining architectural advantage of the TO-247-4 (K) package. By eliminating common-source inductance from the gate loop, the device achieves faster switching transitions with less ringing, enabling higher converter efficiency and higher switching frequency, which shrinks magnetics and capacitors in the power stage.
Typical applications include solar inverters and energy storage systems, UPS and server power supplies, motor drives and industrial motor control, and high-voltage DC-DC converters. These systems benefit directly from the 1200 V blocking capability and low conduction losses at high current.
Designers should drive the gate with +15 V on / -4 V off levels per Wolfspeed recommendations and lay out the Kelvin return trace as short as possible to preserve the switching-loss benefit.
This page synthesizes distributor data, drop-in alternative analysis, and practical design guidance not found in the manufacturer datasheet alone. Pricing shown is as of 2026-10-11.
ドロップイン代替品: C3M0021120K — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
クイック比較ツール — 並列比較する代替部品を選択:
C3M0021120K1
✅ ドロップイン📋 参考代替品（カタログ未掲載）
C3M0040120K
✅ ドロップイン📋 参考代替品（カタログ未掲載）
C3M0075120K
✅ ドロップイン📋 参考代替品（カタログ未掲載）
C3M0021120K 最大定格＆電気的特性
| Technology | SiC (Silicon Carbide), 3rd generation C3M planar |
| Drain-Source Voltage (VDS) | 1200 V |
| On-Resistance (RDS(on)) | 21 mOhm max |
| Continuous Drain Current (ID) | 100 A at Tc |
| Power Dissipation (PD) | 469 W at Tc |
| Configuration | Single N-Channel, Enhancement Mode |
| Gate Drive Voltage | 15 V recommended turn-on |
| パッケージ | TO-247-4 (K), through-hole |
| Kelvin Source Pin | Yes (separate driver source pin) |
| 実装タイプ | Through Hole |
| Qualification | Industrial |
| Typical Applications | UPS, motor control and drives, SMPS, solar and energy storage systems |
C3M0021120K ピン構成
| ピン 1 | G — Gate - gate drive input |
| ピン 2 | S — Source - power source terminal |
| ピン 3 | D — Drain - connected to mounting tab |
| ピン 4 | Kelvin Source — Driver source - dedicated gate-drive return pin that decouples common-source inductance |
安全動作領域
主な用途
C3M0021120K の用途: 6 件s: Solar String Inverters, Energy Storage Systems (ESS) DC-DC Converters, UPS and Server Power Supplies, Industrial Motor Drives, High-Voltage DC Fast Chargers, Solid-State Circuit Breakers and Industrial Power Distribution.
Solar String Inverters
The C3M0021120K fits solar string-inverter power stages because its 1200 V blocking rating supports modern 800-1100 V DC link architectures, while 21 mOhm on-resistance limits conduction loss at the high RMS currents of three-phase power stages. According to Wolfspeed, solar and energy storage are explicitly targeted applications for this part. In a typical boost or 3-phase inverter leg, the device switches at 15-25 kHz, where SiC's absence of tail current cuts turn-off losses dramatically versus IGBTs, improving overall efficiency by 1-2 percentage points. The Kelvin source pin of the TO-247-4 package keeps gate-loop inductance low, enabling clean switching at these speeds. Trade-off: a +15 V / -4 V gate drive and careful layout are required to avoid dv/dt-induced spurious turn-on.
おすすめ
Energy Storage Systems (ESS) DC-DC Converters
Battery energy storage bidirectional DC-DC converters operate from 600-1000 V DC buses, exactly the window where the C3M0021120K's 1200 V rating with 21 mOhm on-resistance is optimal. At the 50-100 A continuous currents of a 50 kW-class CLLC or dual-active-bridge converter, conduction loss with this device is estimated at 52-210 W per device - recoverable through high-frequency zero-voltage switching enabled by SiC's fast transitions. The Kelvin source pin reduces switching ringing, allowing the higher resonant frequencies that shrink transformers and filter capacitors. Because bidirectional converters switch in both directions, low output charge and clean commutation matter; the C3MTM 3rd-generation die provides a well-characterized, industrial-qualified body diode for reverse conduction. Negative gate bias at shutdown is still recommended to hold the device off against Miller coupling.
おすすめ
UPS and Server Power Supplies
Wolfspeed lists UPS and switched-mode power supplies as primary applications for the C3M0021120K. Online double-conversion UPS systems and 10-25 kW server/telecom rectifiers use 800 V DC links where the 1200 V rating provides protective margin. The 21 mOhm on-resistance limits conduction loss in PFC boost stages running 40-60 A peak currents, and the TO-247-4 Kelvin source makes hard-switched boost topologies viable at 50-100 kHz, shrinking the boost inductor versus silicon IGBT designs. In UPS inverter output stages, the low switching loss reduces heatsink volume and fan noise - a tangible product differentiator for datacenter equipment. Designers should implement desaturation or overcurrent sensing and use gate drivers with Miller clamp functions to protect the SiC die during fault events.
おすすめ
Industrial Motor Drives
Motor control and drives are a flagship Wolfspeed application for the C3MTM family. Industrial 400-690 V AC motor drives benefit from the 1200 V rating, and the 21 mOhm device suits 30-55 kW drive frames drawing 50-100 A RMS. SiC MOSFETs let designers raise PWM switching frequency from 4-8 kHz (typical IGBT) to 20-50 kHz, reducing motor current ripple, torque ripple, acoustic noise, and the size/weight of the DC-link and output filters. The Kelvin source pin is especially valuable here: long motor cables and high dv/dt stress the gate loop, so low common-source inductance preserves switching integrity. Design trade-off: higher dv/dt at motor terminals may require dv/dt filters or sine filters for long cable runs, and gate drive must include desaturation detection for short-circuit robustness.
おすすめ
High-Voltage DC Fast Chargers
EV DC fast-charger power modules use 800 V-class CLLC and PFC stages where the C3M0021120K's 1200 V, 21 mOhm ratings align directly with 50-75 kW module power levels. Wolfspeed's SpeedVal ecosystem (including the MOD-PWR-MM-C3M0021120K daughter card for the SpeedVal Kit) validates this device specifically for such modular power conversion development. The Kelvin-source TO-247-4 package enables resonant-tank switching at 100-500 kHz, cutting magnetics size per kilowatt - critical for charger power density targets. At 60 A RMS, estimated conduction loss is about 76 W per device, manageable with forced-air cold plates. Because charger modules run bidirectional (V2G), the device's characterized body-diode and reverse-recovery behavior support smooth mode transitions. Standardize on +15 V / -4 V drive levels across the module for design reuse.
おすすめ
Solid-State Circuit Breakers and Industrial Power Distribution
Solid-state breakers (SSBs) for 750-1000 V DC industrial distribution need devices with high blocking voltage, low on-state loss at continuous current, and fast turn-off under fault. The C3M0021120K's 1200 V rating and 21 mOhm on-resistance meet the continuous-conduction requirement - at 40 A, estimated conduction loss is only 33.6 W per device, acceptable in a breaker housing with modest cooling. SiC MOSFETs clear faults in microseconds rather than the milliseconds of mechanical breakers, protecting downstream converters. Design considerations: SSBs hold the device off for extended periods, so a sustained negative gate bias (-4 V) plus a bleed path across the gate prevents charge-induced turn-on; and the 469 W at-Tc power rating provides ample surge headroom for the short interval between fault detection and current commutation to a varistor clamp stage.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: C3M0021120K — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | C3M0021120K1 | C3M0040120K | C3M0075120K |
|---|---|---|---|---|
| Brand | Wolfspeed | Wolfspeed | Wolfspeed | Wolfspeed |
| Package | TO-247-4 (K) | TO-247-4 (K) - same | TO-247-4 (K) - same | TO-247-4 (K) - same |
| Drain-Source Voltage | 1200 V | 1200 V | 1200 V | 1200 V |
| RDS(on) | 21 mOhm | 21 mOhm | 40 mOhm | 75 mOhm |
| Kelvin Source Pin | Yes | Yes | Yes | Yes |
| Technology Generation | 3rd gen C3M | 3rd gen C3M (refreshed datasheet) | 3rd gen C3M | 3rd gen C3M |
| Qualification | Industrial | Industrial | Industrial | Industrial |
主な差別化要因
- Lowest on-resistance in the 1200 V TO-247-4 C3M lineup （vs C3M0040120K)
- Kelvin source pin eliminates common-source inductance （vs C3M0021120D)
- Refreshed K1 revision available for new designs （vs C3M0021120K1)
設計ノート
The TO-247-4 Kelvin source pin only delivers its switching-loss benefit if the gate-drive return loop is physically short. Route the gate driver's return trace directly to pin 4, not to the power source bus at pin 2, and keep the gate-driver-to-gate distance under 15-20 mm. Ferrite-bead or small gate resistors (2-5 ohm external) plus a tight loop suppress parasitic ringing at the fast di/dt the SiC die produces. Reference Wolfspeed's SiC gate-drive application guidance (PRD-04814 referenced in the K1 datasheet) for drive-level tolerance requirements.
Estimated: at 50 A RMS continuous through 21 mOhm, conduction loss is roughly I^2*R = 52.5 W per device; at the full 100 A rating it reaches about 210 W. The 469 W power rating assumes the case is held near 25 C, so heatsink design must hold case temperature well below 100 C in your worst-case ambient. Verify the exact junction-to-case thermal resistance in the datasheet, apply your heatsink theta-CA, and confirm junction stays within limits with margin. Never rely on free-air convection at these current levels.
Wolfspeed recommends +15 V turn-on gate voltage with +/-5 percent regulation (per family datasheet note referencing Application Note PRD-04814). Driving below this increases RDS(on) and losses; driving above 19 V risks gate-oxide overstress. A negative off-state bias (typically -4 V) is strongly recommended in half-bridge topologies to prevent dv/dt-induced spurious turn-on through the Miller capacitance - omitting it is one of the most common causes of SiC bridge shoot-through failures. Also verify that gate drivers include Miller clamp and desaturation/overcurrent protection for fault robustness.
TO-247 through-hole mounting on a heatsink requires careful screw/clip torque and thermally conductive interface material (typically 1-3 C/W theta-CH with good TIM). For parallel operation of multiple C3M0021120K devices to reach higher current, match VGS(th) and RDS(on) across devices and give each device its own gate turn-on resistor to prevent current crowding during switching; symmetric PCB layout of power loops is essential for sharing.
コンプライアンス情報
Verified web data states 'Industrial qualified' per Wolfspeed product page. AEC-Q101/Q100 automotive-grade data not present in provided data; RoHS/REACH details must be confirmed on the Wolfspeed product page or datasheet.
