CGD65B130SH2 - 650V, 12A GaN HEMT, 8-DFN | Cambridge GaN
部品番号: CGD65B130SH2 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $3.45 | $3.45 |
| 10 | $3.1 | $31.00 |
| 100 | $2.62 | $262.00 |
| 500 | $2.15 | $1,075.00 |
| 1,000 | $1.74 | $1,740.00 |
CGD65B130SH2 概要
A GaN HEMT (Gallium Nitride High Electron Mobility Transistor) is a wide-bandgap power transistor whose two-dimensional electron gas (2DEG) channel delivers far higher switching speed, lower gate charge, and lower on-resistance per area than silicon MOSFETs of the same voltage class. The CGD65B130SH2 belongs to the power semiconductor family, sitting in the power management hierarchy between low-voltage logic MOSFETs (sub-200V) and high-voltage SiC MOSFETs (typically >900V). It is engineered as a normally-off enhancement-mode device for easy drop-in replacement of silicon superjunction MOSFETs in 400 V and 500 V bus designs.
Per the manufacturer datasheet, the CGD65B130SH2 specifies 12 A continuous drain current at 25°C, total gate charge Qg = 1.9 nC, gate threshold voltage of 2.2 V to 4.2 V, and RDS(on) range of 130 to 350 mΩ across drive and temperature conditions. The 650 V rating provides substantial derating margin for universal-input PFC stages operating from rectified 230 VAC mains, where bus voltages reach 400 V. The 8-DFN (5x6) package with bottom-side cooling pad supports high-density surface-mount reflow and reduces parasitic source inductance, which is critical for clean switching at >100 kHz.
The architecture exploits GaN's high critical electric field and 2DEG channel mobility to achieve low conduction and switching losses simultaneously, enabling hard-switched topologies such as totem-pole PFC and LLC converters to operate at multi-hundred-kHz frequencies without the thermal penalties imposed by silicon superjunction MOSFETs. The integrated current-sense and NL³ protection circuits reduce external component count in motor-drive and synchronous-rectification applications.
Typical applications include AC-DC and DC-DC converters, totem-pole bridgeless PFC front ends, server and telecom switched-mode power supplies, photovoltaic micro-inverters and string inverters, on-board chargers for electric vehicles, motor drives, and class-D audio amplifiers.
When designing with this part, confirm gate-drive voltage of 12 V is available and place the gate drive loop return directly under the source connection. Decouple the gate-driver supply locally and follow Cambridge GaN Devices' reference layout for the 8-DFN (5x6) footprint.
This page consolidates distributor pricing, drop-in alternatives, and application guidance beyond what the manufacturer datasheet alone provides, helping engineers shorten their selection cycle for 650 V GaN power stages.
ドロップイン代替品: CGD65B130SH2 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: CGD65B130SH2 （同一形状・フットプリント） — 相違点: Package, Transistor Type.
クイック比較ツール — 並列比較する代替部品を選択:
CGD65B130S2
✅ ドロップイン✓ 在庫あり
$2.1 / 個
データシートを見る →CGD65B130SH
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
CGD65B130SH2-Q
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
CGD65B130SH2 最大定格＆電気的特性
| Manufacturer | Cambridge GaN Devices |
| Part Number | CGD65B130SH2 |
| トランジスタタイプ | N-Channel GaN HEMT (Enhancement Mode) |
| Drain-Source Voltage (VDS) | 650 V |
| Continuous Drain Current (ID) at 25°C | 12 A |
| On-Resistance RDS(on) (typical, per product page) | 55 mΩ |
| On-Resistance RDS(on) (max at 900 mA / 12 V) | 182 mΩ |
| On-Resistance Range (datasheet) | 130 to 350 mΩ |
| Gate Threshold Voltage VGS(th) | 2.2 V to 4.2 V |
| Total Gate Charge Qg | 1.9 nC |
| Technology | GaN-on-silicon (ICeGaN®) |
| Integrated Features | ICeGaN® gate, Current Sense, NL³ protection circuit |
| パッケージ | 8-DFN (5x6 mm), Surface Mount |
| 実装タイプ | Surface Mount |
| Operating Mode | Enhancement-mode (normally-off) |
| Compliance / RoHS | Compliant (per DigiKey listing) |
CGD65B130SH2 ピン構成
| ピン 1 | Drain — Power drain terminal (per datasheet package diagram) |
| ピン 2 | Drain — Power drain terminal (per datasheet package diagram) |
| ピン 3 | Source — Power source terminal (per datasheet package diagram) |
| ピン 4 | Source — Power source terminal (per datasheet package diagram) |
| ピン 5 | Source — Power source terminal (per datasheet package diagram) |
| ピン 6 | Source — Power source terminal (per datasheet package diagram) |
| ピン 7 | Gate — ICeGaN gate drive input (per datasheet) |
| ピン 8 | Source — Power source terminal / thermal pad return (per datasheet package diagram) |
安全動作領域 (estimated envelope)
主な用途
CGD65B130SH2 の用途: 6 件s: Totem-Pole Bridgeless PFC, Server / Telecom SMPS, Photovoltaic String Inverters, EV On-Board Chargers, Brushless DC Motor Drives, Class-D Audio Amplifiers.
Totem-Pole Bridgeless PFC
The CGD65B130SH2 is a primary switch candidate for totem-pole bridgeless PFC stages fed from 230 VAC mains. Its 650 V VDS rating provides comfortable headroom above the 400 V rectified bus, and the 1.9 nC total gate charge enables switching frequencies well above 100 kHz, shrinking the PFC inductor size and improving power density. The lack of body-diode reverse-recovery charge removes the cross-conduction losses that plague silicon superjunction implementations, while the on-chip current-sense output supports cycle-by-cycle current-mode control. Compared with a silicon 600 V/20 A MOSFET, the CGD65B130SH2 in the same 8-DFN footprint cuts switching losses in half and eliminates diode bridge losses entirely.
おすすめ
Server / Telecom SMPS
For 1-3 kW 48 V output server and telecom switched-mode power supplies, the CGD65B130SH2 drives the primary side of an LLC converter where its 650 V rating is over-specified for 380-400 VDC telecom bus inputs. The 1.9 nC Qg allows the LLC to run at 200 kHz+, shrinking the resonant tank and the transformer footprint. The NL³ protection circuit on the CGD65B130SH2 cuts over-current shutdown time and reduces the host controller interrupt latency, which matters when designing for 80 PLUS Titanium efficiency targets. The 8-DFN (5x6) footprint is footprint-compatible with the silicon 600 V superjunction MOSFETs that the server PSU community has historically used, easing migration.
おすすめ
Photovoltaic String Inverters
In 5-10 kW residential and commercial photovoltaic string inverters, the CGD65B130SH2 forms the boost and DC-DC converter switches, with multiple parts in parallel possible thanks to its positive temperature coefficient on-resistance. The 650 V breakdown rating is suitable for 600 VDC max solar input strings, and the low RDS(on) of 55 mΩ (typical) limits I²R conduction losses during peak solar generation. The integrated current-sense output of the CGD65B130SH2 simplifies MPPT algorithm implementation by providing an internal drain-current sense that does not require an external shunt or sense-FET circuit.
おすすめ
EV On-Board Chargers
The CGD65B130SH2 is suitable for 6.6-22 kW EV on-board charger modules where 400 V and 800 V powertrain buses are charged from 230 VAC mains. The 650 V VDS of the CGD65B130SH2 covers the rectified 400 V bus with margin for a 6.6 kW OBC, and a pair of these parts in a totem-pole arrangement handles the full input current at high switching frequency, reducing the size of the PFC inductor and the DC-DC transformer. Cambridge GaN Devices' automotive-qualified variant (CGD65B130SH2-Q, same 8-DFN footprint) is recommended for AEC-Q100 application environments.
おすすめ
Brushless DC Motor Drives
The CGD65B130SH2 can replace silicon IGBTs and MOSFETs in 400-500 V brushless DC motor drives for industrial automation and e-mobility. Its low Qg supports 50-100 kHz PWM frequencies, which shrink the motor's acoustic signature and reduce the torque ripple. The 12 A continuous current rating covers fractional-horsepower industrial BLDC servos up to 1 kW, while the integrated current-sense of the CGD65B130SH2 simplifies FOC algorithm implementation by feeding the controller's shunt-free current path.
おすすめ
Class-D Audio Amplifiers
In 200-500 W class-D audio amplifiers, the CGD65B130SH2 is used in the output half-bridge where its low gate charge (1.9 nC) and absence of reverse-recovery charge enable 500 kHz+ switching frequencies. These high PWM frequencies move the LC filter cutoff above the audible band and let designers use smaller filter inductors, reducing amplifier size and weight. The 650 V rating of the CGD65B130SH2 covers +/-100 V audio rails with margin, and the 8-DFN (5x6) footprint allows four devices to be paralleled on a single PCB for higher-power multi-channel amplifiers.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: CGD65B130SH2 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | CGD65B130S2 | CGD65B130SH | CGD65B130SH2-Q |
|---|---|---|---|---|
| Brand | Cambridge GaN Devices | Cambridge GaN Devices | Cambridge GaN Devices | Cambridge GaN Devices |
| Package | 8-DFN (5x6) | 8-DFN (5x6) - same | 8-DFN (5x6) - same | 8-DFN (5x6) - same |
| Drain-Source Voltage VDS | 650 V | 650 V | 650 V | 650 V |
| Continuous Drain Current (25°C) | 12 A | 12 A | 12 A | 12 A |
| RDS(on) typical | 55 mΩ | 55 mΩ | 55 mΩ | 55 mΩ |
| Gate Threshold VGS(th) | 2.2 V to 4.2 V | 2.2 V to 4.2 V | 2.2 V to 4.2 V | 2.2 V to 4.2 V |
| Total Gate Charge Qg | 1.9 nC | 1.9 nC | 1.9 nC | 1.9 nC |
| Integrated Gate Driver | ICeGaN® (integrated) | ICeGaN® (integrated) | ICeGaN® (integrated) | ICeGaN® (integrated) |
| Automotive Qualification | Not qualified (commercial) | Not qualified | Not qualified | AEC-Q100 qualified (automotive) |
主な差別化要因
- ICeGaN® integrated gate driver and current sense eliminate external driver ICs （vs Discrete 650 V GaN HEMTs without integrated driver)
- 55 mΩ typical RDS(on) at 650 V in 8-DFN (5x6) （vs Silicon 600 V superjunction MOSFET in TO-220 or similar package)
- Automotive-qualified variant available in same footprint （vs Commercial-grade same-die alternatives)
設計ノート
The 8-DFN (5x6) package has a bottom-side cooling pad that doubles as the primary source terminal. Place at least 8 thermal vias in this pad (0.3 mm drill, 0.6 mm pitch) to a continuous inner-layer copper pour sized for the application's dissipation. The gate-drive loop return must connect directly under the source bond to keep the gate-loop inductance under 5 nH - critical because the CGD65B130SH2's 1.9 nC Qg at 12 V transitions in ~5 ns at moderate drive strengths, generating V = L*di/dt spikes that can false-trigger the gate if loop inductance is too high. Follow the Cambridge GaN Devices reference layout in the application note.
Estimated: at 12 A continuous drain current, 25°C ambient, and worst-case RDS(on) of 350 mΩ (datasheet max), the CGD65B130SH2 dissipates roughly P = I²R = 12² × 0.35 = ~50 W if forced to the datasheet maximum. Real applications run at 50-150 mΩ RDS(on) typical, so dissipation drops to 7-22 W. A 50x50 mm FR4 PCB with 2 oz copper on four layers holds theta_JA near 30 C/W, giving ~210°C junction rise at 7 W - heatsink or thermal via array required above ~3 W dissipation.
The CGD65B130SH2 is enhancement-mode (normally-off) but does not have a silicon-MOSFET-style body diode - it uses GaN's intrinsic channel reverse-conduction. Do not parallel anti-parallel silicon diodes across it as you would a silicon MOSFET; the body diode forward voltage (~1.5 V) is higher than silicon's. For totem-pole PFC dead-time control, schedule the synchronous FET turn-on within 50 ns of turn-off to avoid the high body-diode drop penalty. Also do not exceed 12 V VGS; permanent oxide damage occurs above +15 V VGS, and below 0 V VGS the gate is not robust.
コンプライアンス情報
RoHS compliance confirmed per DigiKey product listing. AEC-Q100 qualification applies to the CGD65B130SH2-Q variant only; the standard CGD65B130SH2 is not AEC-Q100 qualified. REACH, halogen-free status, and conflict-minerals reporting not explicitly listed in the verified data.
