DMN3190LDW-7 - 30V Dual N-Channel MOSFET Array | Diodes Inc | SOT-363
部品番号: DMN3190LDW-7 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0.3 | $0.30 |
| 10 | $0.27 | $2.70 |
| 100 | $0.2 | $20.00 |
| 500 | $0.16 | $80.00 |
| 1,000 | $0.13 | $130.00 |
| 3,000 | $0.1 | $300.00 |
DMN3190LDW-7 概要
An N-channel enhancement-mode MOSFET is a voltage-controlled field-effect transistor whose channel conductivity is induced when a positive gate-to-source voltage exceeds the threshold voltage. In dual-MOSFET array packages, two transistors share the same small outline footprint, allowing designers to implement synchronous rectifiers, load switches, or half-bridge stages without doubling PCB area. Such arrays sit within the broader hierarchy of discrete semiconductors > MOSFETs > small-signal MOSFETs > load-switch MOSFETs.
Key features include an exceptionally low RDS(ON) that minimizes conduction loss, fast turn-on/turn-off times that reduce switching loss, and a logic-level gate drive threshold compatible with 1.8V-5V microcontroller GPIO. The DMN3190LDW-7 is engineered to deliver superior switching performance while maintaining low on-state resistance, making it ideal where every milliwatt of loss matters. The green-compliant SOT-363 package is fully RoHS compliant and suitable for lead-free reflow profiles up to 260C peak.
Typical applications include portable device load switching, battery protection circuits in lithium-ion packs, USB power switching, signal isolation in analog front-ends, and high-side/low-side drivers in small DC-DC converter stages. Designers also use this array for level shifters and discrete OR-ing diodes in redundant power paths. The compact SOT-363 footprint (frees 2.0 x 2.1 mm) supports dense board layouts where multiple switches must coexist with other analog ICs.
When designing with this device, ensure that the gate drive rise time is fast enough to fully enhance the channel and minimize the linear-region transition loss. Place gate-source pull-down resistors (typically 100k) to prevent accidental turn-on during power-up transients.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, providing an information gain layer for engineers evaluating DMN3190LDW-7 for next-generation portable designs.
ドロップイン代替品: DMN3190LDW-7 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: DMN3190LDW-7 （同一形状・フットプリント） — 相違点: Package, Configuration, Manufacturer, Technology, Mounting Type.
クイック比較ツール — 並列比較する代替部品を選択:
DMN3190LDW-13
✅ ドロップイン📋 参考代替品（カタログ未掲載）
DMN3190LDWQ-7
✅ ドロップイン📋 参考代替品（カタログ未掲載）
DMN3190LDWQ-13
✅ ドロップイン📋 参考代替品（カタログ未掲載）
DMN3190LDW
✅ ドロップイン📋 参考代替品（カタログ未掲載）
DMN3190LDW-7 最大定格＆電気的特性
| FET Type | Dual N-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | 30 V |
| Gate-Source Voltage (VGS) | 20 V |
| Continuous Drain Current (ID) | 1 A |
| Power Dissipation (PD) | 320 mW |
| パッケージ | SOT-363 (SC-70-6) 6-pin |
| 実装タイプ | Surface Mount |
| 動作温度 | -55C to +150C |
| Configuration | Dual, independent drains |
| Technology | Silicon N-Channel MOSFET |
| Channel Mode | Enhancement |
| MSLレベル | 1 (unlimited) |
| RoHS ステータス | Compliant |
| Lead-Free | Yes |
| Factory Pack Quantity | 3000 |
DMN3190LDW-7 ピン構成
| ピン 1 | G1 — Gate of MOSFET 1 (Channel 1 gate input) |
| ピン 2 | S1 — Source of MOSFET 1 (Channel 1 source) |
| ピン 3 | D2 — Drain of MOSFET 2 (Channel 2 drain) |
| ピン 4 | S2 — Source of MOSFET 2 (Channel 2 source) |
| ピン 5 | D1 — Drain of MOSFET 1 (Channel 1 drain) |
| ピン 6 | G2 — Gate of MOSFET 2 (Channel 2 gate input) |
安全動作領域 (per channel, 25C, SOT-363 mounted on 1 sq inch copper)
主な用途
DMN3190LDW-7 の用途: 6 件s: Portable Device Load Switching, Lithium-Ion Battery Protection, USB VBUS Power Switching, Signal Isolation and Level Shifting, Small DC-DC Converter Half-Bridge Stage, Analog Switch and Multiplexer Building Block.
Portable Device Load Switching
The DMN3190LDW-7 is ideal for load-switch circuits in smartphones, wearables, and portable IoT devices that need to disconnect subsystems and save quiescent power. With 30V VDS headroom above the typical 3.7V Li-ion rail and a 1A continuous drain current rating, the array easily handles power-rail gating for sensors, radios, and display backlights. The low on-resistance keeps voltage drop below 100 mV at full load, preserving battery run-time. Its SOT-363 footprint fits comfortably next to a single QFN PMIC, and the logic-level gate threshold enables direct GPIO drive from a 1.8V MCU without a level shifter, reducing PCB complexity.
おすすめ
Lithium-Ion Battery Protection
The DMN3190LDW-7 serves as a low-loss discharge FET in single-cell Li-ion and Li-polymer battery protection circuits. Its 30V VDS rating provides ample margin above the 4.2V fully-charged cell voltage with a corresponding resistive drop, while the 1A drain rating covers typical smartphone, tablet, and wearable discharge profiles. The dual-array configuration allows one MOSFET for the discharge path and the second for charge-path OR-ing or as a redundant protection switch. The SOT-363 footprint keeps the protection block compact, critical for space-constrained battery packs where every square millimeter counts.
おすすめ
USB VBUS Power Switching
In USB Type-A and Type-C VBUS power-path switches, the DMN3190LDW-7 provides an inexpensive, low-drop solid-state switching element. Its 30V VDS rating easily tolerates USB hot-plug transients and cable inductance spikes, and the 1A continuous current supports USB 2.0/3.0 standard downstream port profiles without thermal limiting. A single channel handles VBUS gating, while the second channel can switch the USB data-line shield or implement a dedicated over-current disconnect. The logic-level gate drive means a USB Type-C controller GPIO can drive the gate directly, eliminating an external gate-driver IC.
おすすめ
Signal Isolation and Level Shifting
The DMN3190LDW-7 dual MOSFET array can be wired as a passive level shifter or analog signal isolator between circuits operating at different ground potentials or voltage rails. By tying the two N-channel devices in a common-source configuration, the array passes analog signals up to 30V while blocking DC offsets between the two grounds. This technique is common in audio isolation, industrial sensor interfaces, and mixed-signal data acquisition. The SOT-363 footprint keeps the isolator smaller than two discrete SOT-23 MOSFETs, and the matched on-resistance of the array preserves signal symmetry in differential paths.
おすすめ
Small DC-DC Converter Half-Bridge Stage
In compact synchronous buck or boost converters below 5W output power, the DMN3190LDW-7 dual array can implement the high-side and low-side switches in a tiny half-bridge stage. The 30V VDS rating covers 12V input rails comfortably, and the matched pair ensures clean, symmetric switching transitions that minimize dead-time losses. Designers use the array in point-of-load regulators, LED driver stages, and auxiliary supply rails around larger PMICs. The SOT-363 package easily fits next to a small inductor and ceramic output caps for a complete sub-1W converter in less than 25 mm squared of board area.
おすすめ
Analog Switch and Multiplexer Building Block
The DMN3190LDW-7 dual N-channel array can be configured as a low-resistance analog switch or 2:1 multiplexer for audio, video, or low-speed data signals below the VGS maximum. Designers tie the sources together and drive the gates to route signals between two paths, achieving on-resistance well under 1 ohm when fully enhanced. This technique is widely used in audio jack switches, video cross-point routers, and instrumentation multiplexers. The SOT-363 footprint allows the analog switch to fit next to a codec or op-amp without sacrificing board density, and the matched pair ensures both paths share identical electrical behavior.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: DMN3190LDW-7 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | DMN3190LDW-13 | DMN3190LDWQ-7 | DMN3190LDWQ-13 | DMN3190LDW |
|---|---|---|---|---|---|
| Package | SOT-363 (SC-70-6) | SOT-363 (SC-70-6) - same | SOT-363 (SC-70-6) - same | SOT-363 (SC-70-6) - same | SOT-363 (SC-70-6) - same |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| VDS Max | 30 V | 30 V | 30 V | 30 V | 30 V |
| Continuous Drain Current | 1 A | 1 A | 1 A | 1 A | 1 A |
| Power Dissipation | 320 mW | 320 mW | 320 mW | 320 mW | 320 mW |
| Configuration | Dual N-Channel | Dual N-Channel | Dual N-Channel | Dual N-Channel | Dual N-Channel |
| Automotive Grade (AEC-Q100) | No | No | Yes | Yes | No |
| Reel Quantity | 3000 (-7 suffix) | 10000 (-13 suffix) | 3000 (-7 suffix) | 10000 (-13 suffix) | Bulk/various |
主な差別化要因
- Compact dual-MOSFET array in industry-standard SOT-363 （vs DMN3190LDW-13)
- Logic-level gate threshold for direct GPIO drive （vs DMN3190LDWQ-7)
- Matched dual-channel characteristics （vs DMN3190LDW)
設計ノート
Estimated: at ID=1A continuous per channel and ambient 25C, power loss equals ID-squared times RDS(ON). With RDS(ON) of approximately 0.2 ohm at VGS=4.5V, single-channel dissipation is around 200 mW. The SOT-363 package is rated for 320 mW total (both channels combined) on a JEDEC 1 sq inch 2-oz copper test board. For applications driving both channels at near full current, derate the design to 100-120 mW per channel or use a 4-layer board with an internal ground plane to drop thermal resistance by 30-40%.
Lay out the SOT-363 footprint per JEDEC standard land pattern with thermal vias under the exposed source pads. Place gate drive traces away from drain switching nodes to minimize capacitive coupling that could cause false turn-on. Add a 100k ohm gate-source pull-down resistor on each channel to ensure the MOSFET stays off during MCU reset or power-up transients. Keep the drain and source traces short and wide to minimize ringing in high di/dt switching applications.
Do not exceed VGS of 20V absolute maximum - typical designs drive VGS between 4.5V and 10V. A floating gate can partially enhance the channel from stray charge, causing unwanted current flow and battery drain; always include the gate pull-down resistor. The two MOSFET channels are independent (separate drains and sources), not a half-bridge configuration - confirm the pinout against the datasheet before assuming internal connection. SOA derating above 20V VDS is significant due to the small SOT-363 die area.
コンプライアンス情報
RoHS compliant per Diodes Incorporated product page and distributor listings. The base DMN3190LDW-7 is not AEC-Q100 qualified; choose DMN3190LDWQ-7 or DMN3190LDWQ-13 for automotive-grade applications. Halogen-free status not explicitly stated in verified data.
