IAUZ18N10S5L420ATMA1 - 100V 18A 42mΩ N-Ch OptiMOS 5 | Infineon
部品番号: IAUZ18N10S5L420ATMA1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0.92 | $0.92 |
| 10 | $0.78 | $7.80 |
| 100 | $0.65 | $65.00 |
| 500 | $0.55 | $275.00 |
| 1,000 | $0.48 | $480.00 |
IAUZ18N10S5L420ATMA1 概要
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used to efficiently switch or amplify signals in power electronics. Within the power semiconductor hierarchy, a MOSFET sits between IGBTs and standard FETs; OptiMOS 5 represents Infineon's fifth-generation optimized trench MOSFET process that delivers the lowest figure-of-merit (FOM = RDS(on) × Qg) in the 100 V class. This positions it within the broader class of voltage regulators, motor drivers, and DC-DC converters used in power management subsystems.
Key features of this device include a 42 mΩ maximum RDS(on) at VGS = 10 V, low gate charge (Qg typ. 8.5 nC), low output charge (Qoss), an integrated body diode optimized for synchronous rectification, and a maximum junction temperature of 175 °C. The S3O8 (PG-TSDSON-8-32) package offers a Kelvin-source connection that reduces gate-drive parasitic effects and enables 30 W of continuous power dissipation with proper PCB thermal design.
The IAUZ18N10S5L420 uses Infineon's latest 100 V OptiMOS 5 trench technology, which achieves the lowest specific on-resistance per unit area in its class. The 8-pin PG-TSDSON-8-32 package with exposed drain pad provides a typical thermal resistance (RthJA) of approximately 50 °C/W on a 1-inch² copper area, enabling high-current operation in compact automotive modules.
Typical applications include automotive 48 V mild-hybrid DC-DC converters, LED headlight drivers, electric power steering (EPS) motor control, and high-current USB-PD power switches. The part's automotive qualification also makes it suitable for body control modules and battery management systems (BMS) in electric vehicles.
When designing with this part, prioritize PCB layout to maximize the drain-pad copper area; the S3O8 package's thermal performance is dominated by PCB copper, not the package itself. For high-frequency switching (>100 kHz), use a gate resistor to control ringing, and place the gate drive loop area as small as possible to minimize parasitic inductance.
This page synthesizes distributor pricing, drop-in alternatives, and practical thermal design guidance not consolidated on the manufacturer datasheet, including side-by-side comparison of OptiMOS 5 family members and competitor cross-brand equivalents in the S3O8 footprint.
ドロップイン代替品: IAUZ18N10S5L420ATMA1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IAUZ18N10S5L420ATMA1 （同一形状・フットプリント） — 相違点: Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), Mounting Type.
クイック比較ツール — 並列比較する代替部品を選択:
IAUZ30N08S5N186ATMA1
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$0.48 / 個
データシートを見る →IAUC120N06S5L015ATMA1
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$0.92 / 個
データシートを見る →IAUZ40N10S5N130ATMA1
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$0.52 / 個
データシートを見る →BSC0801NSIATMA1
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
BSC0901NSIATMA1
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$0.38 / 個
データシートを見る →BSC019N08NS5ATMA1
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$1.78 / 個
データシートを見る →IAUZ18N10S5L420ATMA1 最大定格＆電気的特性
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 5 100V |
| トランジスタタイプ | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at TC=25°C | 18 A |
| On-Resistance RDS(on) max at VGS=10V | 42 mΩ |
| Gate-Source Voltage (VGS) | ±20 V |
| Gate Threshold Voltage (VGS(th)) | 1.7 V to 2.7 V |
| Total Gate Charge (Qg) typ. | 8.5 nC |
| Power Dissipation (PD) at TC=25°C | 30 W |
| 動作接合温度 | -55 °C to +175 °C |
| パッケージ | PG-TSDSON-8-32 (S3O8) 3.3x3.3 mm |
| 実装タイプ | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified |
| Technology | OptiMOS 5 trench |
| Configuration | Single with built-in diode |
| RoHS ステータス | Compliant |
| MSLレベル | 1 |
IAUZ18N10S5L420ATMA1 ピン構成
| ピン 1 | S — Source |
| ピン 2 | S — Source |
| ピン 3 | S — Source |
| ピン 4 | G — Gate |
| ピン 5 | S (Kelvin) — Source - Kelvin connection for gate drive return |
| ピン 6 | S (Kelvin) — Source - Kelvin connection for gate drive return |
| ピン 7 | S — Source |
| ピン 8 | S — Source |
| ピン PAD | D — Drain (exposed pad on bottom of package) |
安全動作領域 - DC
主な用途
IAUZ18N10S5L420ATMA1 の用途: 6 件s: 48V Mild-Hybrid DC-DC Converter, Automotive LED Headlight Driver, Electric Power Steering (EPS) Motor Drive, USB-PD High-Current Power Switch, Battery Management System (BMS) Protection Switch, Industrial High-Side Load Switch.
48V Mild-Hybrid DC-DC Converter
The IAUZ18N10S5L420ATMA1 is well-matched to 48 V automotive mild-hybrid DC-DC converters (typically 48 V to 12 V buck topology) because its 100 V VDS rating provides a 2x safety margin over the 48 V bus while the 42 mΩ RDS(on) keeps full-load efficiency above 96%. The 8.5 nC Qg keeps switching losses low at 100-200 kHz switching frequencies, and the AEC-Q101 qualification is mandatory for the 48 V system reliability requirements. In a typical 2 kW converter, two IAUZ18N10S5L420ATMA1 in parallel on the high-side switch can deliver 8-10 A continuous per device. Recommend pairing with a dedicated gate driver like 1EDN7136UXTSA1 or 2ED21064S06JXUMA1.
おすすめ
Automotive LED Headlight Driver
For automotive LED headlight applications (front light, matrix beam, daytime running lights), the IAUZ18N10S5L420ATMA1 serves as the high-side or low-side switching element in the buck/boost LED driver stage. Its 18 A continuous current covers most high-brightness LED string currents (typically 0.7-1.5 A per LED, with 4-12 LEDs in series). The 100 V rating allows direct switching from 12 V or 48 V bus without additional boost stages, and the S3O8 3.3x3.3 mm footprint enables compact driver PCB integration inside the headlight housing. AEC-Q101 qualification is required for the -40°C to +125°C headlight environment.
おすすめ
Electric Power Steering (EPS) Motor Drive
The IAUZ18N10S5L420ATMA1 is suitable for column-assist or pinion-assist EPS motor control where 3-phase inverter legs switch at 20-50 kHz PWM and handle peak motor currents of 30-60 A. While a single 18 A part may be undersized for direct traction use, the IAUZ18N10S5L420ATMA1 works well in the auxiliary power supply, brake-light MOSFET, or low-current phase legs of compact EPS systems. Its AEC-Q101 qualification and -55°C to +175°C junction rating are essential for the under-hood thermal environment. The 8.5 nC Qg enables low-loss switching at the EPS inverter frequency range.
おすすめ
USB-PD High-Current Power Switch
In USB Power Delivery (USB-PD 3.1 EPR) applications sourcing 28 V, 36 V, or 48 V at 5 A from a vehicle 48 V bus, the IAUZ18N10S5L420ATMA1 acts as a high-side load switch protecting the downstream USB-C controller. The 100 V VDS rating easily handles the 48 V bus plus inductive transients, and the 42 mΩ RDS(on) dissipates only 1 W at 5 A (versus 2-3 W in competing parts). The S3O8 package is small enough to fit inside USB-C connector modules. Recommend pairing with TLE42744EV50XUMA1 or similar LDO for the USB-C controller's logic supply.
おすすめ
Battery Management System (BMS) Protection Switch
The IAUZ18N10S5L420ATMA1 functions as the discharge or charge protection MOSFET in 12 V/24 V/48 V automotive Battery Management Systems. Its 100 V rating and 18 A continuous current match typical BMS load switch requirements for SLI (Starting-Lighting-Ignition) and mild-hybrid battery packs. The low 42 mΩ RDS(on) minimizes voltage drop across the protection switch, preserving battery capacity measurement accuracy. AEC-Q101 qualification is mandatory for BMS-grade components. The integrated body diode also supports reverse-polarity protection when paired with a second MOSFET in a back-to-back configuration.
おすすめ
Industrial High-Side Load Switch
In industrial 24 V or 48 V PLC/DCS load switch applications (valve control, solenoid drivers, relay replacement), the IAUZ18N10S5L420ATMA1 provides a solid-state alternative to mechanical relays. The 100 V VDS rating tolerates 24 V inductive kickback and 48 V bus transients without varistor clamping. The 18 A current rating covers most industrial load switch use cases, and the 42 mΩ RDS(on) keeps on-state dissipation below 14 W at 18 A (manageable with the S3O8 PCB thermal design). The S3O8 footprint allows miniaturized PLC output modules versus larger DPAK alternatives.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IAUZ18N10S5L420ATMA1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IAUZ30N08S5N186ATMA1 | IAUC120N06S5L015ATMA1 | IAUZ40N10S5N130ATMA1 | BSC0801NSIATMA1 | BSC0901NSIATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TSDSON-8-32 (S3O8) 3.3x3.3 mm | PG-TSDSON-8-32 (S3O8) 3.3x3.3 mm | PG-TSDSON-8-32 (S3O8) 3.3x3.3 mm | PG-TSDSON-8-32 (S3O8) 3.3x3.3 mm | PG-TSDSON-8-32 (S3O8) 3.3x3.3 mm | PG-TSDSON-8-32 (S3O8) 3.3x3.3 mm |
| Drain-Source Voltage (VDS) | 100 V | 80 V | 60 V | 100 V | 80 V | 100 V |
| RDS(on) max at VGS=10V | 42 mΩ | 18.6 mΩ | 1.5 mΩ | 13 mΩ | 8 mΩ | 9 mΩ |
| Automotive Qualified | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
主な差別化要因
- AEC-Q101 automotive qualified in compact 3.3x3.3 mm S3O8 package （vs IAUZ40N10S5N130ATMA1)
- 100 V VDS rating - 2x headroom over 48 V automotive bus （vs IAUC120N06S5L015ATMA1)
- OptiMOS 5 100V technology - lowest FOM in 3x3 mm package （vs BSC0801NSIATMA1)
設計ノート
Estimated: at 18 A continuous drain current with RDS(on) of 42 mΩ (max) at TJ=25°C, conduction dissipation reaches 13.6 W. The PG-TSDSON-8-32 package's RthJA of approximately 50 °C/W on 1 in² of 2 oz copper will cause a junction temperature rise of about 25°C/W × 13.6 W = 340°C, far exceeding the 175°C limit. Therefore the 18 A rating is only valid with TC=25°C (infinite heatsink) - in real PCB designs the practical continuous current at TA=25°C is approximately 5-7 A. For higher continuous current, parallel two parts, use a 4-layer PCB with 2 oz copper on top and bottom, or add an external heatsink via thermal vias to inner copper planes.
Place the gate drive components (gate resistor, gate-source pull-down) within 5 mm of the gate pin (pin 4) to minimize the gate-drive loop area. Use the Kelvin source pins (5, 6) as the gate-drive return path - do NOT connect the gate drive return to the power source pins (1, 2, 3, 7, 8) which carry high di/dt. The exposed drain pad must be soldered to at least 50 mm² of copper on the top layer plus thermal vias to inner/bottom copper planes to achieve the rated thermal performance.
Do NOT exceed VGS of ±20 V - the IAUZ18N10S5L420ATMA1 has a relatively low VGS absolute maximum for a 100 V MOSFET. Use a 12 V gate drive supply (not 15 V or 18 V) to stay within rating with margin. Add a 10 kΩ gate-source resistor to prevent inadvertent turn-on from drain dv/dt coupling during switching transients. For high-side (buck high-side) use, ensure the bootstrap supply or charge pump provides a stable 12 V regardless of the switching node dV/dt.
For switching frequencies above 100 kHz, add a small ferrite bead or 1-10 Ω gate resistor to dampen gate ringing caused by the gate-source loop inductance. The body diode is optimized for synchronous rectification but has a Qrr that can cause reverse recovery losses in hard-switched topologies - consider using a co-pack or external SiC diode for hard-switched applications above 50 kHz. In buck converters, keep the switch-node copper area small to minimize radiated EMI.
コンプライアンス情報
AEC-Q101 qualified (not AEC-Q100 - Q101 is the discrete semiconductor standard). RoHS and REACH compliant per Infineon product page. Lead-free and halogen-free per the OptiMOS 5 datasheet environmental section. Conflict-mineral reporting compliant per Infineon CMRT filings.
