IAUZ30N08S5N186ATMA1 - 80V 18.6mΩ OptiMOS 5 N-MOSFET | Infineon
MPN: IAUZ30N08S5N186ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.18 | $1.18 |
| 10 | $1.02 | $10.20 |
| 100 | $0.86 | $86.00 |
| 500 | $0.71 | $355.00 |
| 1,000 | $0.59 | $590.00 |
| 3,000 | $0.48 | $1,440.00 |
Drop-in alternatives for IAUZ30N08S5N186ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IAUC100N08S5N043ATMA1
✅ Drop-In✓ In Stock
$1.72 / Unit
View Datasheet →IAUC50N08S5L096ATMA1
✅ Drop-In✓ In Stock
$0.98 / Unit
View Datasheet →IAUCN08S7N024ATMA1
✅ Drop-In✓ In Stock
$0.89 / Unit
View Datasheet →IAUC60N06S5L073ATMA1
✅ Drop-In✓ In Stock
$0.41 / Unit
View Datasheet →IAUC100N04S6N028ATMA1
✅ Drop-In✓ In Stock
$0.42 / Unit
View Datasheet →NVMFS6H800N
✅ Drop-In📋 Reference alternative (not in catalog)
IAUZ30N08S5N186ATMA1 Maximum Ratings & Electrical Characteristics
| Technology | OptiMOS 5 N-Channel Power MOSFET (trench) |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID, Tj) | 30 A |
| Power Dissipation (PD, Tc) | 41 W |
| On-State Resistance (RDS(on)) | 18.6 mΩ (typical, VGS = 10 V) |
| Operating Temperature Range | -55 °C to +175 °C (automotive) |
| Package | PG-TSDSON-8-32 (5x6 mm) |
| Mounting Type | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified |
| RoHS Status | Compliant |
IAUZ30N08S5N186ATMA1 Pin Configuration
| Pin 1 | Gate — MOSFET gate drive input |
| Pin 2 | Source — Source connection (internally tied to pins 3-7) |
| Pin 3 | Source — Source connection |
| Pin 4 | Source — Source connection |
| Pin 5 | Source — Source connection |
| Pin 6 | Source — Source connection |
| Pin 7 | Source — Source connection |
| Pin 8 | Source — Source connection |
| Pin EP | Drain — Exposed pad - drain and primary thermal path |
Safe Operating Area (DC, Tj=175°C)
Typical Applications
IAUZ30N08S5N186ATMA1 is suitable for 6 applications: Automotive 12 V/24 V Battery Switching & Load Management, ADAS Sensor Power Rail & ECU Power Distribution, Automotive LED Lighting & Daytime Running Lamps, Electric Power Steering & Auxiliary Motor Drive, DC-DC Converters & Synchronous Rectification, Reverse-Battery & Load-Dump Protection Circuits.
Automotive 12 V/24 V Battery Switching & Load Management
The IAUZ30N08S5N186ATMA1 is designed as a high-side or low-side switch for automotive battery rails, where its 80 V VDS rating and 30 A continuous current handle the bulk of 12 V and 24 V load events. Its 18.6 mΩ RDS(on) at VGS=10 V minimizes voltage drop across the MOSFET - critical for ECU power management where even 100 mV of sag can trigger undervoltage resets. Compared with a relay, it offers silent switching, longer life, and PWM capability for dimming or soft-start. The AEC-Q101 qualification and -55 to +175 °C junction range cover underhood, body, and ADAS power-distribution modules.
Recommended
ADAS Sensor Power Rail & ECU Power Distribution
Advanced Driver Assistance Systems require clean, isolated power rails for radar, camera, and lidar modules. The IAUZ30N08S5N186ATMA1 acts as a solid-state e-fuse or hot-swap switch, leveraging its 80 V VDS to survive 24 V load-dump transients and its low RDS(on) to limit steady-state I²R losses. The AEC-Q101 qualification supports ASIL-classified power trees. The exposed drain pad of PG-TSDSON-8-32 spreads heat into inner copper layers, allowing dense PCB layouts under the sensor housing. Using one MOSFET per sensor rail also enables per-channel current monitoring and fault isolation.
Recommended
Automotive LED Lighting & Daytime Running Lamps
LED headlamps and DRLs require constant-current drivers operating from the 12 V/24 V battery with PWM dimming. The IAUZ30N08S5N186ATMA1 can be placed either as a low-side switch in series with the LED string or as a high-side switch upstream of the boost converter. Its 30 A capability drives multi-channel headlamp arrays, while its 18.6 mΩ RDS(on) keeps conduction loss below 2 W at 10 A - well within the 41 W power dissipation rating with a moderate PCB copper area. The AEC-Q101 qualification survives the high-temperature environment inside the lamp housing.
Recommended
Electric Power Steering & Auxiliary Motor Drive
EPS systems, water pumps, oil pumps, and HVAC blowers demand robust H-bridge or 3-phase inverter switches. The IAUZ30N08S5N186ATMA1 fits the low-side position of such inverters, where its 80 V VDS supports the inductive flyback from motor windings and the 30 A continuous rating covers peak transient torque loads. AEC-Q101 and 175 °C junction rating satisfy underhood thermal stress. The exposed pad of PG-TSDSON-8-32 solders to an inner copper pour for thermal spreading, often sharing a heatsink plane with the high-side switch.
Recommended
DC-DC Converters & Synchronous Rectification
In 12 V to 5 V/3.3 V buck converters, the IAUZ30N08S5N186ATMA1 serves as either the control switch or the synchronous rectifier. At switching frequencies of 200-400 kHz, its low RDS(on) and moderate Qg keep efficiency above 95%. The 80 V VDS provides comfortable margin against ringing on the switch node, which often overshoots by 30-40 V above the input rail. For higher-power rails, the lower-RDS(on) IAUC50N08S5L096ATMA1 in the same PG-TSDSON-8-32 footprint is the recommended drop-in upgrade to push efficiency further.
Recommended
Reverse-Battery & Load-Dump Protection Circuits
Automotive protection circuits require a MOSFET that can block reverse battery polarity and clamp load-dump transients. The IAUZ30N08S5N186ATMA1, placed in series with the battery feed, blocks reverse current when the gate is off and conducts forward current with only 18.6 mΩ of loss when on. Its 80 V VDS absorbs load-dump pulses up to ISO 7637-2 test levels for 12 V systems, while the 30 A continuous rating covers starter inrush and accessory peaks. The AEC-Q101 grade ensures long-term reliability under hood temperature swings.
Recommended
Recommended Products Summary
Engineering reference data for IAUZ30N08S5N186ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUC100N08S5N043ATMA1 | IAUC50N08S5L096ATMA1 | IAUCN08S7N024ATMA1 | IAUC60N06S5L073ATMA1 | NVMFS6H800N |
|---|---|---|---|---|---|---|
| Package | PG-TSDSON-8-32 (5x6 mm) | PG-TSDSON-8-32 - same | PG-TSDSON-8-32 - same | PG-TSDSON-8-32 - same | PG-TSDSON-8-32 - same | PG-TSDSON-8-32 (5x6 mm) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi |
| Drain-Source Voltage (VDS) | 80 V | 80 V | 80 V | 80 V | 60 V | 80 V |
| Continuous Drain Current (Tj) | 30 A | 100 A | 50 A | [DATA_NEEDED] | 60 A | 50 A |
| RDS(on) at VGS=10V (typ) | 18.6 mΩ | 4.3 mΩ | 9.6 mΩ | 2.4 mΩ | 7.3 mΩ | 18 mΩ |
| Power Dissipation (Tc) | 41 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology Family | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 7 | OptiMOS 5 | onsemi AutoFET |
| Automotive Grade (AEC-Q101) | Yes | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- 18.6 mΩ RDS(on) at lower cost than 4.3 mΩ IAUC100N08S5N043ATMA1 (vs IAUC100N08S5N043ATMA1)
- OptiMOS 5 vs OptiMOS 7 - mature process with established reliability data (vs IAUCN08S7N024ATMA1)
- Lower VDS rating gives best RDS(on) per dollar in 12 V/24 V systems (vs IAUC100N04S6N028ATMA1)
Design Notes
The PG-TSDSON-8-32 package uses the exposed drain pad as the primary thermal path. At 41 W power dissipation into a 25 °C case, the junction would rise to its maximum rating only if infinite heatsink is provided. In practice, design for a PCB copper area of at least 50 mm² of 1 oz copper on the drain pad, with thermal vias to an inner plane. At 10 A continuous current, conduction loss is P = I² x RDS(on) = 100 x 0.0186 = 1.86 W, easily handled by a 25 mm² copper pour.
Keep the high di/dt loop (drain-source-switching node) as small as possible - the source inductance from the package leads to the gate drive return determines switching loss and ringing. Place a 100 nF X7R ceramic bypass capacitor directly between gate and source within 5 mm of the pins. The exposed drain pad must be continuously soldered (no thermal relief spokes) to maximize thermal and electrical performance; use at least 4 thermal vias (0.3 mm drill, 1 oz copper plating).
Do not exceed the gate-source voltage rating (typically ±20 V for OptiMOS 5). Use a gate-source pull-down resistor (10-100 kΩ) to ensure the MOSFET stays off when the gate driver is tri-stated during power-up. Avoid routing sensitive analog traces under the drain pad - the switching node radiates high dv/dt. For 24 V systems, verify ISO 7637-2 pulse 5 compliance with a TVS or transient suppressor upstream of the MOSFET.
Compliance Information
AEC-Q101 qualified (automotive discrete standard). RoHS and REACH compliant per Infineon product page. AEC-Q100 reference here reflects that AEC-Q101 is the parallel automotive standard for discrete semiconductors - treated as 'qualified' for automotive applications.
