IAUZ30N08S5N186ATMA1 - 80V 18.6mΩ OptiMOS 5 N-MOSFET | Infineon
部品番号: IAUZ30N08S5N186ATMA1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1.18 | $1.18 |
| 10 | $1.02 | $10.20 |
| 100 | $0.86 | $86.00 |
| 500 | $0.71 | $355.00 |
| 1,000 | $0.59 | $590.00 |
| 3,000 | $0.48 | $1,440.00 |
IAUZ30N08S5N186ATMA1 概要
An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device where applying a positive gate-source voltage creates an inversion layer that conducts current between drain and source. MOSFETs are the fundamental building blocks of modern power electronics, sitting at the bottom of a taxonomy that includes: power MOSFET -> discrete semiconductor -> power switch -> power management component. Compared with bipolar transistors, MOSFETs offer faster switching, simpler gate drive, and lower conduction losses, making them dominant in switched-mode power conversion.
Key features include 80 V VDS rating, 30 A continuous drain current (Tj), 41 W power dissipation at Tc, and an ultra-low RDS(on) of 18.6 mΩ at VGS=10 V. The PG-TSDSON-8-32 package provides a low thermal resistance footprint with an exposed drain pad for direct PCB heat spreading, and its gull-wing leads are compatible with automated optical inspection and standard reflow profiles. The part is qualified to AEC-Q101, the industry standard for automotive discrete semiconductors.
The device is built on Infineon's OptiMOS 5 trench process technology, which combines a high cell density with a low-resistance substrate to minimize both conduction and switching losses. Compared to planar MOSFETs, the trench geometry shrinks the cell pitch and increases transconductance, delivering lower gate charge (Qg) for a given RDS(on). This results in lower drive losses at high switching frequencies, enabling smaller magnetics in DC-DC converters and reduced EMI in motor drive stages.
Typical applications include automotive 12 V/24 V battery switching, ECU power management, LED lighting drivers, e-fuse and circuit protection blocks, ADAS sensor power rails, and motor control for pumps, fans, and small actuators. The 80 V rating provides ample margin against 24 V load-dump transients per ISO 7637-2, while the low RDS(on) minimizes conduction loss and self-heating in high-current paths.
Designers should size the gate drive circuit for the typical gate charge to ensure fast turn-on/turn-off and to minimize dead-time losses in synchronous topologies. The exposed drain pad must be soldered to a sufficiently large copper pour (typically >=1 oz copper over >=50 mm²) to keep junction temperature within the -55 °C to +175 °C automotive operating range.
This page synthesizes distributor pricing, automotive-grade drop-in alternatives from the OptiMOS 5 family, and practical design notes not found in the manufacturer datasheet, including SOA guidance and PCB layout recommendations.
ドロップイン代替品: IAUZ30N08S5N186ATMA1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IAUZ30N08S5N186ATMA1 （同一形状・フットプリント） — 相違点: Technology, Operating Temperature Range, Package, Series, Automotive Qualification.
クイック比較ツール — 並列比較する代替部品を選択:
IAUC100N08S5N043ATMA1
✅ ドロップイン✓ 在庫あり
$1.72 / 個
データシートを見る →IAUC50N08S5L096ATMA1
✅ ドロップイン✓ 在庫あり
$0.98 / 個
データシートを見る →IAUCN08S7N024ATMA1
✅ ドロップイン✓ 在庫あり
$0.89 / 個
データシートを見る →IAUC60N06S5L073ATMA1
✅ ドロップイン✓ 在庫あり
$0.41 / 個
データシートを見る →IAUC100N04S6N028ATMA1
✅ ドロップイン✓ 在庫あり
$0.42 / 個
データシートを見る →NVMFS6H800N
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IAUZ30N08S5N186ATMA1 最大定格＆電気的特性
| Technology | OptiMOS 5 N-Channel Power MOSFET (trench) |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID, Tj) | 30 A |
| Power Dissipation (PD, Tc) | 41 W |
| On-State Resistance (RDS(on)) | 18.6 mΩ (typical, VGS = 10 V) |
| 動作温度範囲 | -55 °C to +175 °C (automotive) |
| パッケージ | PG-TSDSON-8-32 (5x6 mm) |
| 実装タイプ | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified |
| RoHS ステータス | Compliant |
IAUZ30N08S5N186ATMA1 ピン構成
| ピン 1 | Gate — MOSFET gate drive input |
| ピン 2 | Source — Source connection (internally tied to pins 3-7) |
| ピン 3 | Source — Source connection |
| ピン 4 | Source — Source connection |
| ピン 5 | Source — Source connection |
| ピン 6 | Source — Source connection |
| ピン 7 | Source — Source connection |
| ピン 8 | Source — Source connection |
| ピン EP | Drain — Exposed pad - drain and primary thermal path |
安全動作領域 (DC, Tj=175°C)
主な用途
IAUZ30N08S5N186ATMA1 の用途: 6 件s: Automotive 12 V/24 V Battery Switching & Load Management, ADAS Sensor Power Rail & ECU Power Distribution, Automotive LED Lighting & Daytime Running Lamps, Electric Power Steering & Auxiliary Motor Drive, DC-DC Converters & Synchronous Rectification, Reverse-Battery & Load-Dump Protection Circuits.
Automotive 12 V/24 V Battery Switching & Load Management
The IAUZ30N08S5N186ATMA1 is designed as a high-side or low-side switch for automotive battery rails, where its 80 V VDS rating and 30 A continuous current handle the bulk of 12 V and 24 V load events. Its 18.6 mΩ RDS(on) at VGS=10 V minimizes voltage drop across the MOSFET - critical for ECU power management where even 100 mV of sag can trigger undervoltage resets. Compared with a relay, it offers silent switching, longer life, and PWM capability for dimming or soft-start. The AEC-Q101 qualification and -55 to +175 °C junction range cover underhood, body, and ADAS power-distribution modules.
おすすめ
ADAS Sensor Power Rail & ECU Power Distribution
Advanced Driver Assistance Systems require clean, isolated power rails for radar, camera, and lidar modules. The IAUZ30N08S5N186ATMA1 acts as a solid-state e-fuse or hot-swap switch, leveraging its 80 V VDS to survive 24 V load-dump transients and its low RDS(on) to limit steady-state I²R losses. The AEC-Q101 qualification supports ASIL-classified power trees. The exposed drain pad of PG-TSDSON-8-32 spreads heat into inner copper layers, allowing dense PCB layouts under the sensor housing. Using one MOSFET per sensor rail also enables per-channel current monitoring and fault isolation.
おすすめ
Automotive LED Lighting & Daytime Running Lamps
LED headlamps and DRLs require constant-current drivers operating from the 12 V/24 V battery with PWM dimming. The IAUZ30N08S5N186ATMA1 can be placed either as a low-side switch in series with the LED string or as a high-side switch upstream of the boost converter. Its 30 A capability drives multi-channel headlamp arrays, while its 18.6 mΩ RDS(on) keeps conduction loss below 2 W at 10 A - well within the 41 W power dissipation rating with a moderate PCB copper area. The AEC-Q101 qualification survives the high-temperature environment inside the lamp housing.
おすすめ
Electric Power Steering & Auxiliary Motor Drive
EPS systems, water pumps, oil pumps, and HVAC blowers demand robust H-bridge or 3-phase inverter switches. The IAUZ30N08S5N186ATMA1 fits the low-side position of such inverters, where its 80 V VDS supports the inductive flyback from motor windings and the 30 A continuous rating covers peak transient torque loads. AEC-Q101 and 175 °C junction rating satisfy underhood thermal stress. The exposed pad of PG-TSDSON-8-32 solders to an inner copper pour for thermal spreading, often sharing a heatsink plane with the high-side switch.
おすすめ
DC-DC Converters & Synchronous Rectification
In 12 V to 5 V/3.3 V buck converters, the IAUZ30N08S5N186ATMA1 serves as either the control switch or the synchronous rectifier. At switching frequencies of 200-400 kHz, its low RDS(on) and moderate Qg keep efficiency above 95%. The 80 V VDS provides comfortable margin against ringing on the switch node, which often overshoots by 30-40 V above the input rail. For higher-power rails, the lower-RDS(on) IAUC50N08S5L096ATMA1 in the same PG-TSDSON-8-32 footprint is the recommended drop-in upgrade to push efficiency further.
おすすめ
Reverse-Battery & Load-Dump Protection Circuits
Automotive protection circuits require a MOSFET that can block reverse battery polarity and clamp load-dump transients. The IAUZ30N08S5N186ATMA1, placed in series with the battery feed, blocks reverse current when the gate is off and conducts forward current with only 18.6 mΩ of loss when on. Its 80 V VDS absorbs load-dump pulses up to ISO 7637-2 test levels for 12 V systems, while the 30 A continuous rating covers starter inrush and accessory peaks. The AEC-Q101 grade ensures long-term reliability under hood temperature swings.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IAUZ30N08S5N186ATMA1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IAUC100N08S5N043ATMA1 | IAUC50N08S5L096ATMA1 | IAUCN08S7N024ATMA1 | IAUC60N06S5L073ATMA1 | NVMFS6H800N |
|---|---|---|---|---|---|---|
| Package | PG-TSDSON-8-32 (5x6 mm) | PG-TSDSON-8-32 - same | PG-TSDSON-8-32 - same | PG-TSDSON-8-32 - same | PG-TSDSON-8-32 - same | PG-TSDSON-8-32 (5x6 mm) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi |
| Drain-Source Voltage (VDS) | 80 V | 80 V | 80 V | 80 V | 60 V | 80 V |
| RDS(on) at VGS=10V (typ) | 18.6 mΩ | 4.3 mΩ | 9.6 mΩ | 2.4 mΩ | 7.3 mΩ | 18 mΩ |
| Technology Family | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 7 | OptiMOS 5 | onsemi AutoFET |
| Automotive Grade (AEC-Q101) | Yes | Yes | Yes | Yes | Yes | Yes |
主な差別化要因
- 18.6 mΩ RDS(on) at lower cost than 4.3 mΩ IAUC100N08S5N043ATMA1 （vs IAUC100N08S5N043ATMA1)
- OptiMOS 5 vs OptiMOS 7 - mature process with established reliability data （vs IAUCN08S7N024ATMA1)
- Lower VDS rating gives best RDS(on) per dollar in 12 V/24 V systems （vs IAUC100N04S6N028ATMA1)
設計ノート
The PG-TSDSON-8-32 package uses the exposed drain pad as the primary thermal path. At 41 W power dissipation into a 25 °C case, the junction would rise to its maximum rating only if infinite heatsink is provided. In practice, design for a PCB copper area of at least 50 mm² of 1 oz copper on the drain pad, with thermal vias to an inner plane. At 10 A continuous current, conduction loss is P = I² x RDS(on) = 100 x 0.0186 = 1.86 W, easily handled by a 25 mm² copper pour.
Keep the high di/dt loop (drain-source-switching node) as small as possible - the source inductance from the package leads to the gate drive return determines switching loss and ringing. Place a 100 nF X7R ceramic bypass capacitor directly between gate and source within 5 mm of the pins. The exposed drain pad must be continuously soldered (no thermal relief spokes) to maximize thermal and electrical performance; use at least 4 thermal vias (0.3 mm drill, 1 oz copper plating).
Do not exceed the gate-source voltage rating (typically ±20 V for OptiMOS 5). Use a gate-source pull-down resistor (10-100 kΩ) to ensure the MOSFET stays off when the gate driver is tri-stated during power-up. Avoid routing sensitive analog traces under the drain pad - the switching node radiates high dv/dt. For 24 V systems, verify ISO 7637-2 pulse 5 compliance with a TVS or transient suppressor upstream of the MOSFET.
コンプライアンス情報
AEC-Q101 qualified (automotive discrete standard). RoHS and REACH compliant per Infineon product page. AEC-Q100 reference here reflects that AEC-Q101 is the parallel automotive standard for discrete semiconductors - treated as 'qualified' for automotive applications.
