IGT65R025D2ATMA1 - 650V 70A GaN FET, PG-HSOF-8 | Infineon
部品番号: IGT65R025D2ATMA1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $12.82 | $12.82 |
| 10 | $11.95 | $119.50 |
| 100 | $10.4 | $1,040.00 |
| 500 | $9.2 | $4,600.00 |
| 1,000 | $8.55 | $8,550.00 |
IGT65R025D2ATMA1 概要
A GaN power transistor (gallium-nitride HEMT) is a wide-bandgap semiconductor switching device in which an AlGaN/GaN heterostructure forms a high-electron-mobility two-dimensional electron gas channel. Compared with silicon MOSFETs and IGBTs at the same voltage class, GaN FETs deliver lower on-resistance per area, near-zero reverse-recovery charge (Qrr), and dramatically lower gate and output charge (Qg, Qoss), enabling hard-switched topologies from tens of kHz up to multi-MHz with very low switching loss. GaN belongs to the wide-bandgap semiconductor family alongside SiC, sitting above silicon in voltage, frequency, and efficiency capability.
Key features of the IGT65R025D2 include enhancement-mode (normally-off) operation with a low gate-threshold around 1.0-1.5 V, a small package inductance from the source-down PG-HSOF-8 land pattern, and a Kelvin-source connection that suppresses gate-loop parasitic inductance. The bottom-cooled package routes heat directly into the PCB copper, allowing top-side PCB space to be used for snubbers, gate drivers, and signal traces. According to the manufacturer datasheet, the device is rated for 650 V drain-source blocking and supports avalanche-robust switching.
The internal structure uses Infineon's Gen2 GaN-on-Si 200 mm platform, integrating gate protection, ESD cells, and a source-connected Kelvin pin for clean gate drive. The PG-HSOF-8 source-down footprint allows the user PCB copper to act as both electrical ground and primary thermal interface. Operation is characterised by very low Qg (typically single-digit nC) and Qoss in the tens-of-nC range, which directly enables soft-switched and hard-switched PFC, LLC, and totem-pole PFC topologies at 100-500 kHz.
Typical applications include high-density telecom rectifiers (PFC + LLC stage), industrial SMPS with 380/400 V DC link, server and hyperscaler data-centre PSU modules, on-board EV chargers and DC/DC stages for traction auxiliary, solar inverters with high-frequency isolation stages, and motor drives for HVAC compressors. The 650 V rating provides ample margin across 230 V AC PFC outputs and 400 V DC-link rails.
When designing with this part, place a 5-10 ohm gate resistor and keep the gate-drive loop tight to the gate-Kelvin source pins. Maintain Vgs within the absolute maximum ratings window (commonly -10 V to +18 V for GaN) and use a negative turn-off bias if the topology risks dv/dt-induced false turn-on. Ensure the PCB top-side keep-out under the device accommodates the bottom-side thermal copper.
This page synthesises distributor stock and pricing, drop-in CoolGaN alternatives, application-focused design guidance, and parametric comparison data not found in the manufacturer datasheet, providing a one-stop engineering reference for the IGT65R025D2ATMA1.
ドロップイン代替品: IGT65R025D2ATMA1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IGT65R025D2ATMA1 （同一形状・フットプリント） — 相違点: Operating Temperature Range, Package, Technology, Drain-Source Voltage (VDS), Product Family.
クイック比較ツール — 並列比較する代替部品を選択:
IGT65R025D2ATMA2
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
IGLR70R200D2SXUMA1
✅ ドロップイン✓ 在庫あり
$1.24 / 個
データシートを見る →IPL60R105P7AUMA1
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$0.82 / 個
データシートを見る →IGT65R025D2ATMA1 最大定格＆電気的特性
| Manufacturer | Infineon Technologies |
| Product Family | CoolGaN Gen2 (G5) |
| トランジスタタイプ | N-Channel GaN HEMT, enhancement-mode |
| Drain-Source Voltage (Vdss) | 650 V |
| Continuous Drain Current (Id, Tc) | 70 A |
| Power Dissipation (Pd, Tc) | 236 W |
| On-State Resistance (Rds(on)) | 25 mΩ (typical, per MPN suffix) |
| パッケージ | PG-HSOF-8 (source-down, bottom-cooled) |
| 実装タイプ | Surface Mount |
| 動作温度範囲 | -55C to +150C (junction, typical) |
| Technology | GaN-on-Si, 200 mm wafer, wide-bandgap |
| Reverse Recovery Charge (Qrr) | Near-zero (GaN characteristic) |
| RoHS ステータス | Compliant |
IGT65R025D2ATMA1 ピン構成
| ピン 1 | Drain — Power drain terminal (high-voltage switching node) |
| ピン 2 | Drain — Power drain terminal (high-voltage switching node) |
| ピン 3 | Source (Kelvin) — Kelvin-source return for gate driver, isolated from power source |
| ピン 4 | Gate — Gate drive input |
| ピン 5 | Source — Power source terminal |
| ピン 6 | Source — Power source terminal |
| ピン 7 | Source — Power source terminal |
| ピン 8 | Source — Power source terminal (thermal pad) |
安全動作領域 (DC, per Infineon CoolGaN Gen2 datasheet)
主な用途
IGT65R025D2ATMA1 の用途: 6 件s: Telecom Rectifier PFC + LLC Stage, Server / Data-Centre PSU, Solar Inverter DC/DC Stage, On-Board EV Charger / Traction Auxiliary, Industrial SMPS with 380/400V DC Link, HVAC / Motor Drive Inverter.
Telecom Rectifier PFC + LLC Stage
The IGT65R025D2ATMA1's 650 V drain-source rating and 25 mOhm typical on-state resistance make it ideal for 3 kW telecom rectifiers where a CCM PFC front-end feeds an LLC DC/DC stage at 100-500 kHz. The CoolGaN Gen2 near-zero Qrr eliminates the body-diode reverse-recovery loss that plagues Si MOSFETs in hard-switched PFC, allowing continuous-conduction-mode operation at 200 kHz with >99% PFC stage efficiency. Per the Infineon datasheet, the PG-HSOF-8 source-down package sinks heat into the PCB copper directly under the device, freeing the top side for the LLC transformer and resonant inductor, which enables the 30 W/inch^3 power density typical of modern 80 PLUS Titanium rectifiers.
おすすめ
Server / Data-Centre PSU
Hyperscaler 48 V intermediate-bus converters rated 2-3 kW increasingly deploy totem-pole PFC stages to achieve 80 PLUS Titanium efficiency. The IGT65R025D2ATMA1 with 25 mOhm on-state resistance handles 70 A at case without saturating the thermal budget, while its small Qg (<10 nC typical per Infineon) keeps gate-drive loss under 0.5 W at 250 kHz. The bottom-cooled PG-HSOF-8 package is critical here: in 1U server PSUs the PCB copper is the only heatsink, so source-down cooling maintains junction temperature below 125 C with a 2 oz copper pour. Compared with Si MOSFET bridges, the GaN part reduces PFC-stage loss by 30-40%, directly lifting overall PSU efficiency above 96.5% peak.
おすすめ
Solar Inverter DC/DC Stage
In 1500 V DC-input string inverters and 800 V residential PV systems, the IGT65R025D2ATMA1 sits in the boost PFC or HERIC inverter stage at 100-200 kHz. Its 650 V rating provides comfortable margin above 400 V DC-link transients, and the 25 mOhm on-state resistance drops conduction loss to ~5 W at 30 A peak inductor current. Per Infineon's CoolGaN Gen2 family datasheet, the part supports hard-switched operation without Qrr penalty, which is decisive for the boost diode reverse-recovery problem in interleaved PFC at high frequency. The bottom-cooled PG-HSOF-8 package fits naturally between the magnetics and the DC-link busbar on the underside of the PCB, simplifying IP66 inverter enclosure layout.
おすすめ
On-Board EV Charger / Traction Auxiliary
On-board chargers for 400 V and 800 V EV traction packs operate from PFC mains to a 3-22 kW isolated DC/DC stage, where the IGT65R025D2ATMA1 can replace Si MOSFETs in the primary-side bridge. The CoolGaN Gen2 part's 650 V breakdown supports 400 V battery packs directly and 800 V packs via two-level switching, with 25 mOhm Rds(on) keeping conduction loss under 10 W per switch at 30 A. The PG-HSOF-8 source-down package enables PCB direct-cooling that pairs with liquid-cold-plate conduction paths used in integrated OBC/DC-DC modules. Per Infineon's CoolGaN family datasheet, the part enables 3-5 kW/L power density required for next-generation OBCs.
おすすめ
Industrial SMPS with 380/400V DC Link
In 380/400 V industrial three-phase DC-link SMPS designs, the IGT65R025D2ATMA1 functions as the primary-side switch in a 3-10 kW full-bridge or half-bridge LLC stage at 100-300 kHz. The CoolGaN Gen2 part's near-zero Qrr and small Qoss (tens of nC per Infineon's datasheet) drop switching loss to under 1% of throughput power, enabling 98%+ full-load efficiency. The 70 A continuous drain current (Tc) handles industrial inrush and overload transients, while the bottom-cooled PG-HSOF-8 package pulls heat into the heavy industrial copper bus structure, eliminating external heatsinks in IP54-rated enclosed SMPS modules.
おすすめ
HVAC / Motor Drive Inverter
Variable-frequency drives for HVAC compressors, industrial pumps, and small traction motors increasingly deploy 400 V three-phase inverters with switching frequencies above 20 kHz to suppress audible noise. The IGT65R025D2ATMA1 in PG-HSOF-8 fits the 650 V DC-link inverter stage with 70 A continuous current capacity that covers 5-10 kW motor ratings. Per Infineon's CoolGaN Gen2 datasheet, the part's near-zero reverse-recovery allows hard-switched inverter operation without SiC-style schottky freewheel diodes, simplifying the BOM and improving inverter efficiency by 1-2% over Si IGBT equivalents at the same frequency.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IGT65R025D2ATMA1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IGT65R025D2ATMA2 | IGLR70R200D2SXUMA1 | IPL60R105P7AUMA1 |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-HSOF-8 (source-down) | PG-HSOF-8 (source-down) - same | PG-HSOF-8 (source-down) - same | PG-HSOF-8 (source-down) - same |
| Drain-Source Voltage (Vdss) | 650 V | 650 V | 700 V | 600 V |
| On-State Resistance (Rds(on)) | 25 mOhm (typ) | 25 mOhm (typ) | 200 mOhm | 105 mOhm |
| Technology | GaN-on-Si (CoolGaN Gen2) | GaN-on-Si (CoolGaN Gen2) | GaN-on-Si (CoolGaN) | Silicon MOSFET (CoolMOS) |
| Reverse Recovery Charge (Qrr) | Near-zero (GaN) | Near-zero (GaN) | Near-zero (GaN) | High (Si body-diode) |
| Cooling Direction | Bottom (source-down) | Bottom (source-down) | Bottom (source-down) | Bottom (source-down) |
主な差別化要因
- Bottom-cooled source-down PG-HSOF-8 package frees top-side PCB for magnetics （vs GaN Systems GS66508T (top-cooled GaNPX))
- Integrated Kelvin-source pin suppresses gate-loop inductance （vs Si MOSFET IPB60R280P7ATMA1 (no Kelvin pin))
- Near-zero Qrr enables hard-switched totem-pole PFC without SiC diodes （vs Si IGBT IKW25N120T2 (high Qrr))
設計ノート
The PG-HSOF-8 source-down package routes heat through the PCB copper directly under the drain pad. Per Infineon's CoolGaN Gen2 application note, place 2 oz copper on the bottom layer with a thermal via array (20-30 vias under the drain pad, 0.3 mm drill, 1.0 mm pitch). The gate-Kelvin source pin must be tied to the gate-driver return separately from the power-source pins - this prevents source-inductance Ls(di/dt) feedback that would otherwise ring the gate and cause dv/dt-induced false turn-on at 100+ V/ns switching edges.
Estimated: at 30 A continuous, the IGT65R025D2ATMA1 dissipates approximately 30 A^2 * 25 mOhm = 22.5 W of conduction loss in the on-state at room temperature (assuming 100% duty). At 250 kHz hard-switched PFC switching, additional switching loss contributes 0.5-1.0 W. Total ~23 W must be sunk through PCB copper; per the PG-HSOF-8 thermal resistance spec, junction-to-case theta_JC is approximately 0.6 C/W for the bottom-cooled footprint, so the PCB side becomes the limiting thermal path.
GaN HEMTs switch 5-10x faster than Si MOSFETs (typical dv/dt of 50-100 V/ns versus 10-20 V/ns for Si). The high dv/dt can couple through the Miller capacitance Cgd and disturb the gate. Per Infineon's CoolGaN Gen2 datasheet, use a 5-10 ohm gate resistor and apply a small negative turn-off bias (-3 V) to keep the gate below threshold during off-state. Without negative bias, parasitic turn-on can occur at the high-side of a half-bridge when the low-side turns on rapidly.
Do not exceed Vgs absolute maximum of -10 V to +18 V; GaN has a thinner gate oxide than Si MOSFETs. The IGT65R025D2 is enhancement-mode (normally-off), so it will block at Vgs = 0 V - but gate noise above Vgs(th) (~1.5 V) can still partially enhance the channel. The PG-HSOF-8 source-down package is not compatible with top-side heatsink designs; re-use of legacy Si-MOSFET top-cooled layouts will overheat the GaN part. Verify PCB copper and via thermal budget before substituting in an existing Si design.
コンプライアンス情報
RoHS compliant per Infineon product page. Not AEC-Q100 qualified - this part targets industrial SMPS, server PSU, and telecom rectifier applications; for automotive GaN solutions, see Infineon Auto GaN portfolio.
