IGT65R025D2ATMA1 - 650V 70A GaN FET, PG-HSOF-8 | Infineon
MPN: IGT65R025D2ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $12.82 | $12.82 |
| 10 | $11.95 | $119.50 |
| 100 | $10.4 | $1,040.00 |
| 500 | $9.2 | $4,600.00 |
| 1,000 | $8.55 | $8,550.00 |
IGT65R025D2ATMA1 Overview
A GaN power transistor (gallium-nitride HEMT) is a wide-bandgap semiconductor switching device in which an AlGaN/GaN heterostructure forms a high-electron-mobility two-dimensional electron gas channel. Compared with silicon MOSFETs and IGBTs at the same voltage class, GaN FETs deliver lower on-resistance per area, near-zero reverse-recovery charge (Qrr), and dramatically lower gate and output charge (Qg, Qoss), enabling hard-switched topologies from tens of kHz up to multi-MHz with very low switching loss. GaN belongs to the wide-bandgap semiconductor family alongside SiC, sitting above silicon in voltage, frequency, and efficiency capability.
Key features of the IGT65R025D2 include enhancement-mode (normally-off) operation with a low gate-threshold around 1.0-1.5 V, a small package inductance from the source-down PG-HSOF-8 land pattern, and a Kelvin-source connection that suppresses gate-loop parasitic inductance. The bottom-cooled package routes heat directly into the PCB copper, allowing top-side PCB space to be used for snubbers, gate drivers, and signal traces. According to the manufacturer datasheet, the device is rated for 650 V drain-source blocking and supports avalanche-robust switching.
The internal structure uses Infineon's Gen2 GaN-on-Si 200 mm platform, integrating gate protection, ESD cells, and a source-connected Kelvin pin for clean gate drive. The PG-HSOF-8 source-down footprint allows the user PCB copper to act as both electrical ground and primary thermal interface. Operation is characterised by very low Qg (typically single-digit nC) and Qoss in the tens-of-nC range, which directly enables soft-switched and hard-switched PFC, LLC, and totem-pole PFC topologies at 100-500 kHz.
Typical applications include high-density telecom rectifiers (PFC + LLC stage), industrial SMPS with 380/400 V DC link, server and hyperscaler data-centre PSU modules, on-board EV chargers and DC/DC stages for traction auxiliary, solar inverters with high-frequency isolation stages, and motor drives for HVAC compressors. The 650 V rating provides ample margin across 230 V AC PFC outputs and 400 V DC-link rails.
When designing with this part, place a 5-10 ohm gate resistor and keep the gate-drive loop tight to the gate-Kelvin source pins. Maintain Vgs within the absolute maximum ratings window (commonly -10 V to +18 V for GaN) and use a negative turn-off bias if the topology risks dv/dt-induced false turn-on. Ensure the PCB top-side keep-out under the device accommodates the bottom-side thermal copper.
This page synthesises distributor stock and pricing, drop-in CoolGaN alternatives, application-focused design guidance, and parametric comparison data not found in the manufacturer datasheet, providing a one-stop engineering reference for the IGT65R025D2ATMA1.
Drop-in alternatives for IGT65R025D2ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IGT65R025D2ATMA1 (same form factor and footprint) — differing in Operating Temperature Range, Package, Technology, Drain-Source Voltage (VDS), Product Family.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IGT65R025D2ATMA2
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IGLR70R200D2SXUMA1
✅ Drop-In✓ In Stock
$1.24 / Unit
View Datasheet →IPL60R105P7AUMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.82 / Unit
View Datasheet →IGT65R025D2ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | CoolGaN Gen2 (G5) |
| Transistor Type | N-Channel GaN HEMT, enhancement-mode |
| Drain-Source Voltage (Vdss) | 650 V |
| Continuous Drain Current (Id, Tc) | 70 A |
| Power Dissipation (Pd, Tc) | 236 W |
| On-State Resistance (Rds(on)) | 25 mΩ (typical, per MPN suffix) |
| Package | PG-HSOF-8 (source-down, bottom-cooled) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55C to +150C (junction, typical) |
| Technology | GaN-on-Si, 200 mm wafer, wide-bandgap |
| Reverse Recovery Charge (Qrr) | Near-zero (GaN characteristic) |
| RoHS Status | Compliant |
IGT65R025D2ATMA1 Pin Configuration
| Pin 1 | Drain — Power drain terminal (high-voltage switching node) |
| Pin 2 | Drain — Power drain terminal (high-voltage switching node) |
| Pin 3 | Source (Kelvin) — Kelvin-source return for gate driver, isolated from power source |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Source — Power source terminal |
| Pin 6 | Source — Power source terminal |
| Pin 7 | Source — Power source terminal |
| Pin 8 | Source — Power source terminal (thermal pad) |
Safe Operating Area (DC, per Infineon CoolGaN Gen2 datasheet)
Typical Applications
IGT65R025D2ATMA1 is suitable for 6 applications: Telecom Rectifier PFC + LLC Stage, Server / Data-Centre PSU, Solar Inverter DC/DC Stage, On-Board EV Charger / Traction Auxiliary, Industrial SMPS with 380/400V DC Link, HVAC / Motor Drive Inverter.
Telecom Rectifier PFC + LLC Stage
The IGT65R025D2ATMA1's 650 V drain-source rating and 25 mOhm typical on-state resistance make it ideal for 3 kW telecom rectifiers where a CCM PFC front-end feeds an LLC DC/DC stage at 100-500 kHz. The CoolGaN Gen2 near-zero Qrr eliminates the body-diode reverse-recovery loss that plagues Si MOSFETs in hard-switched PFC, allowing continuous-conduction-mode operation at 200 kHz with >99% PFC stage efficiency. Per the Infineon datasheet, the PG-HSOF-8 source-down package sinks heat into the PCB copper directly under the device, freeing the top side for the LLC transformer and resonant inductor, which enables the 30 W/inch^3 power density typical of modern 80 PLUS Titanium rectifiers.
Recommended
Server / Data-Centre PSU
Hyperscaler 48 V intermediate-bus converters rated 2-3 kW increasingly deploy totem-pole PFC stages to achieve 80 PLUS Titanium efficiency. The IGT65R025D2ATMA1 with 25 mOhm on-state resistance handles 70 A at case without saturating the thermal budget, while its small Qg (<10 nC typical per Infineon) keeps gate-drive loss under 0.5 W at 250 kHz. The bottom-cooled PG-HSOF-8 package is critical here: in 1U server PSUs the PCB copper is the only heatsink, so source-down cooling maintains junction temperature below 125 C with a 2 oz copper pour. Compared with Si MOSFET bridges, the GaN part reduces PFC-stage loss by 30-40%, directly lifting overall PSU efficiency above 96.5% peak.
Recommended
Solar Inverter DC/DC Stage
In 1500 V DC-input string inverters and 800 V residential PV systems, the IGT65R025D2ATMA1 sits in the boost PFC or HERIC inverter stage at 100-200 kHz. Its 650 V rating provides comfortable margin above 400 V DC-link transients, and the 25 mOhm on-state resistance drops conduction loss to ~5 W at 30 A peak inductor current. Per Infineon's CoolGaN Gen2 family datasheet, the part supports hard-switched operation without Qrr penalty, which is decisive for the boost diode reverse-recovery problem in interleaved PFC at high frequency. The bottom-cooled PG-HSOF-8 package fits naturally between the magnetics and the DC-link busbar on the underside of the PCB, simplifying IP66 inverter enclosure layout.
Recommended
On-Board EV Charger / Traction Auxiliary
On-board chargers for 400 V and 800 V EV traction packs operate from PFC mains to a 3-22 kW isolated DC/DC stage, where the IGT65R025D2ATMA1 can replace Si MOSFETs in the primary-side bridge. The CoolGaN Gen2 part's 650 V breakdown supports 400 V battery packs directly and 800 V packs via two-level switching, with 25 mOhm Rds(on) keeping conduction loss under 10 W per switch at 30 A. The PG-HSOF-8 source-down package enables PCB direct-cooling that pairs with liquid-cold-plate conduction paths used in integrated OBC/DC-DC modules. Per Infineon's CoolGaN family datasheet, the part enables 3-5 kW/L power density required for next-generation OBCs.
Recommended
Industrial SMPS with 380/400V DC Link
In 380/400 V industrial three-phase DC-link SMPS designs, the IGT65R025D2ATMA1 functions as the primary-side switch in a 3-10 kW full-bridge or half-bridge LLC stage at 100-300 kHz. The CoolGaN Gen2 part's near-zero Qrr and small Qoss (tens of nC per Infineon's datasheet) drop switching loss to under 1% of throughput power, enabling 98%+ full-load efficiency. The 70 A continuous drain current (Tc) handles industrial inrush and overload transients, while the bottom-cooled PG-HSOF-8 package pulls heat into the heavy industrial copper bus structure, eliminating external heatsinks in IP54-rated enclosed SMPS modules.
Recommended
HVAC / Motor Drive Inverter
Variable-frequency drives for HVAC compressors, industrial pumps, and small traction motors increasingly deploy 400 V three-phase inverters with switching frequencies above 20 kHz to suppress audible noise. The IGT65R025D2ATMA1 in PG-HSOF-8 fits the 650 V DC-link inverter stage with 70 A continuous current capacity that covers 5-10 kW motor ratings. Per Infineon's CoolGaN Gen2 datasheet, the part's near-zero reverse-recovery allows hard-switched inverter operation without SiC-style schottky freewheel diodes, simplifying the BOM and improving inverter efficiency by 1-2% over Si IGBT equivalents at the same frequency.
Recommended
Recommended Products Summary
Engineering reference data for IGT65R025D2ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IGT65R025D2ATMA2 | IGLR70R200D2SXUMA1 | IPL60R105P7AUMA1 |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-HSOF-8 (source-down) | PG-HSOF-8 (source-down) - same | PG-HSOF-8 (source-down) - same | PG-HSOF-8 (source-down) - same |
| Drain-Source Voltage (Vdss) | 650 V | 650 V | 700 V | 600 V |
| On-State Resistance (Rds(on)) | 25 mOhm (typ) | 25 mOhm (typ) | 200 mOhm | 105 mOhm |
| Technology | GaN-on-Si (CoolGaN Gen2) | GaN-on-Si (CoolGaN Gen2) | GaN-on-Si (CoolGaN) | Silicon MOSFET (CoolMOS) |
| Reverse Recovery Charge (Qrr) | Near-zero (GaN) | Near-zero (GaN) | Near-zero (GaN) | High (Si body-diode) |
| Cooling Direction | Bottom (source-down) | Bottom (source-down) | Bottom (source-down) | Bottom (source-down) |
Key Differentiators
- Bottom-cooled source-down PG-HSOF-8 package frees top-side PCB for magnetics (vs GaN Systems GS66508T (top-cooled GaNPX))
- Integrated Kelvin-source pin suppresses gate-loop inductance (vs Si MOSFET IPB60R280P7ATMA1 (no Kelvin pin))
- Near-zero Qrr enables hard-switched totem-pole PFC without SiC diodes (vs Si IGBT IKW25N120T2 (high Qrr))
Design Notes
The PG-HSOF-8 source-down package routes heat through the PCB copper directly under the drain pad. Per Infineon's CoolGaN Gen2 application note, place 2 oz copper on the bottom layer with a thermal via array (20-30 vias under the drain pad, 0.3 mm drill, 1.0 mm pitch). The gate-Kelvin source pin must be tied to the gate-driver return separately from the power-source pins - this prevents source-inductance Ls(di/dt) feedback that would otherwise ring the gate and cause dv/dt-induced false turn-on at 100+ V/ns switching edges.
Estimated: at 30 A continuous, the IGT65R025D2ATMA1 dissipates approximately 30 A^2 * 25 mOhm = 22.5 W of conduction loss in the on-state at room temperature (assuming 100% duty). At 250 kHz hard-switched PFC switching, additional switching loss contributes 0.5-1.0 W. Total ~23 W must be sunk through PCB copper; per the PG-HSOF-8 thermal resistance spec, junction-to-case theta_JC is approximately 0.6 C/W for the bottom-cooled footprint, so the PCB side becomes the limiting thermal path.
GaN HEMTs switch 5-10x faster than Si MOSFETs (typical dv/dt of 50-100 V/ns versus 10-20 V/ns for Si). The high dv/dt can couple through the Miller capacitance Cgd and disturb the gate. Per Infineon's CoolGaN Gen2 datasheet, use a 5-10 ohm gate resistor and apply a small negative turn-off bias (-3 V) to keep the gate below threshold during off-state. Without negative bias, parasitic turn-on can occur at the high-side of a half-bridge when the low-side turns on rapidly.
Do not exceed Vgs absolute maximum of -10 V to +18 V; GaN has a thinner gate oxide than Si MOSFETs. The IGT65R025D2 is enhancement-mode (normally-off), so it will block at Vgs = 0 V - but gate noise above Vgs(th) (~1.5 V) can still partially enhance the channel. The PG-HSOF-8 source-down package is not compatible with top-side heatsink designs; re-use of legacy Si-MOSFET top-cooled layouts will overheat the GaN part. Verify PCB copper and via thermal budget before substituting in an existing Si design.
Compliance Information
RoHS compliant per Infineon product page. Not AEC-Q100 qualified - this part targets industrial SMPS, server PSU, and telecom rectifier applications; for automotive GaN solutions, see Infineon Auto GaN portfolio.
