IPD90P03P404ATMA2 - 30V P-Ch 90A 4.5mΩ MOSFET | Infineon
部品番号: IPD90P03P404ATMA2 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1.09 | $1.09 |
| 10 | $0.98 | $9.80 |
| 100 | $0.86 | $86.00 |
| 500 | $0.74 | $370.00 |
| 1,000 | $0.65 | $650.00 |
| 3,000 | $0.58 | $1,740.00 |
IPD90P03P404ATMA2 概要
A P-channel MOSFET (P-FET) is a voltage-controlled power transistor in which the channel is composed of p-type semiconductor material. Because the source is connected toward the load supply and the device turns on by pulling the gate below the source, a P-channel MOSFET simplifies high-side switching in systems where an N-channel alternative would require a charge pump or bootstrap circuit. In the broader taxonomy it sits within: discrete semiconductor -> MOSFET -> power MOSFET -> P-channel enhancement-mode MOSFET -> automotive-grade power MOSFET.
Key specifications include -30V drain-source breakdown voltage (V(BR)DSS), -90A continuous drain current at TC, 4.5 mΩ typical R DS(on) at VGS = -10V, ±20V gate-source voltage rating, total gate charge (Qg) of 130 nC at 10V, and an input capacitance (Ciss) of approximately 10300 pF at 25V. The 137W power dissipation rating (at TC) and AEC-Q101 automotive qualification make the part suitable for harsh under-hood and chassis environments.
The IPD90P03P404ATMA2 uses Infineon's OptiMOS trench technology, which minimizes R DS(on) per unit silicon area and reduces switching losses through low Qg and Qgd. The very low 4.5 mΩ R DS(on) translates into conduction losses under 1W at 50A load, allowing smaller PCB copper areas and reducing thermal stress on adjacent components. The 175°C maximum junction temperature provides additional thermal margin in space-constrained layouts.
Typical applications include automotive high-side load switching for halogen or LED lamps, body-control modules (BCMs), HVAC blower motors, and reverse-polarity protection circuits where the P-channel sits between the battery and the load. It is also used in industrial 24V/12V hot-swap controllers, eMobility auxiliary supplies, and USB-PD VBUS protection switches.
When designing with this part, place it on a sufficiently large drain copper pour (the tab is internally connected to the drain) to keep RθJA within the application thermal budget. Because the part is P-channel, the gate drive is referenced to the source (typically the battery rail); a small gate pull-up resistor to the source keeps the device off during power-up and prevents accidental turn-on from gate leakage.
This page synthesizes distributor pricing, drop-in cross-brand alternatives and application design notes that are not consolidated in the Infineon datasheet, providing engineers with a single source for sourcing, replacement and layout decisions.
ドロップイン代替品: IPD90P03P404ATMA2 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IPD90P03P404ATMA2 （同一形状・フットプリント） — 相違点: Automotive Qualification, Package, Technology.
クイック比較ツール — 並列比較する代替部品を選択:
IPD90P03P4-04
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IPD50N06S409ATMA2
✅ ドロップイン✓ 在庫あり
$0.49 / 個
データシートを見る →NTR4101PT1G
✅ ドロップイン📋 参考代替品（カタログ未掲載）
Si7461DP-T1-E3
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRF9317TRPBF
✅ ドロップイン📋 参考代替品（カタログ未掲載）
DMG2305UX-7
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
IPD90P03P404ATMA2 最大定格＆電気的特性
| トランジスタタイプ | P-Channel MOSFET |
| Drain-Source Voltage (V(BR)DSS) | -30 V |
| Continuous Drain Current (ID) at TC | -90 A |
| On-State Resistance R DS(on) @ VGS = -10V | 4.5 mΩ (typical) |
| Gate-Source Voltage (VGS) Rating | ±20 V |
| Total Gate Charge (Qg) @ VGS = 10V | 130 nC (typical) |
| Input Capacitance (Ciss) @ VDS = 25V | 10300 pF (typical) |
| Power Dissipation (PD) at TC | 137 W |
| 動作温度範囲 | -55°C to +175°C (TJ) |
| パッケージ | PG-TO252-3-11 (DPAK / TO-252-3) |
| 実装タイプ | Surface Mount |
| MSLレベル | 1 (per JEDEC J-STD-020) |
| Automotive Qualification | AEC-Q101 qualified |
| Technology | OptiMOS trench |
| RoHS ステータス | Compliant |
IPD90P03P404ATMA2 ピン構成
| ピン 1 | Gate — Gate control input (drive relative to source) |
| ピン 2 | Drain — Drain connection (electrically common with the metal tab) |
| ピン 3 | Source — Source connection (typically tied to battery for high-side P-FET) |
安全動作領域
主な用途
IPD90P03P404ATMA2 の用途: 7 件s: Automotive High-Side Lamp Driver, HVAC Blower Motor High-Side Switch, Reverse-Polarity Protection Circuit, Industrial 24V Hot-Swap Controller, USB-PD VBUS Protection Switch, eMobility Battery Management Load Switch, Power Tool Brushless-DC High-Side Switch.
Automotive High-Side Lamp Driver
The IPD90P03P404ATMA2 is well suited for high-side switching of halogen or LED headlamp loads in BCM and front-lighting modules. Its -30V V(BR)DSS gives comfortable margin above the 12V automotive jump-start voltage (often 16V transients), while the 4.5 mΩ R DS(on) keeps conduction loss under 200 mW at a 5A headlamp load, eliminating the need for active cooling. The P-channel topology ties the lamp return to chassis ground, simplifying fault detection and ISO 7637-2 transient immunity. Driving the gate with -10V relative to battery through a small pull-up resistor ensures fast turn-off and prevents parasitic turn-on during cranking transients.
おすすめ
HVAC Blower Motor High-Side Switch
For HVAC blower motors drawing 20-40A in passenger-car climate-control modules, the IPD90P03P404ATMA2 provides a robust high-side P-channel switch in the same PG-TO252-3-11 footprint used by incumbent N-channel designs. Its 90A TC rating and 137W power dissipation allow sustained 30A operation with the DPAK tab soldered to 1 square-inch of drain copper. The P-channel topology eliminates the need for a charge pump supply that N-channel high-side switches require, reducing BOM and PCB area. The AEC-Q101 qualification and 175°C TJ max ensure long-term reliability in the high-temperature under-dash environment.
おすすめ
Reverse-Polarity Protection Circuit
The IPD90P03P404ATMA2 is ideal for reverse-polarity protection in 12V automotive and 24V industrial supplies. Wired source-to-battery and drain-to-load, the P-channel MOSFET conducts during normal polarity and blocks reverse voltage up to -30V. Its 4.5 mΩ R DS(on) is far lower than a Schottky diode solution, eliminating the 0.5-1V drop that wastes 5W at 10A. A simple gate-resistor network keeps the device off until the gate is actively driven, providing failsafe protection during jump-start and load-dump events. The PG-TO252-3-11 tab doubles as both the drain connection and the thermal dissipation path.
おすすめ
Industrial 24V Hot-Swap Controller
In 24V industrial hot-swap and OR-ing applications, the IPD90P03P404ATMA2 provides inrush current limiting with its -30V drain-source rating and 4.5 mΩ on-state resistance. The P-channel topology simplifies the gate-drive network - the gate can be pulled to ground (off) or to source (on) without bootstrap circuitry. With 90A continuous current capability the device handles the full load of a small PLC or industrial sensor hub, while the 137W power dissipation rating provides thermal headroom during sustained 30A operation. The AEC-Q101 automotive-grade screening gives additional reliability margin in 24V factory-automation environments.
おすすめ
USB-PD VBUS Protection Switch
For USB-PD and 20V VBUS protection, the IPD90P03P404ATMA2 acts as a high-side P-channel disconnect switch rated for the 20V PD profile plus transient headroom to 30V. The 4.5 mΩ R DS(on) keeps voltage drop under 50 mV at 5A VBUS current, well inside the USB-C cable-loss budget. The P-channel configuration allows the VBUS return path to remain common with system ground, simplifying ESD and surge protection design. The small PG-TO252-3-11 footprint fits easily next to a Type-C connector, and the 175°C TJ max supports the 5-10W dissipation typical during fast-charge hand-off.
おすすめ
eMobility Battery Management Load Switch
In e-bike and light-electric-vehicle battery management systems, the IPD90P03P404ATMA2 functions as a 12V/24V auxiliary load disconnect switch between the traction battery and downstream DC-DC converters. Its -30V rating handles the 24V nominal bus with margin, while the 4.5 mΩ on-state resistance minimizes quiescent loss during long storage. The P-channel topology simplifies fault-current monitoring because the source is at battery potential and the load return can be sensed through a single low-side shunt. The AEC-Q101 screening ensures reliability under the wide temperature swings of outdoor eMobility applications.
おすすめ
Power Tool Brushless-DC High-Side Switch
Cordless power tools running on 18-20V battery packs use the IPD90P03P404ATMA2 as a high-side P-channel reverse-polarity and inrush-protection switch. The 4.5 mΩ R DS(on) ensures less than 100 mV drop at the 20A peak current typical of brushless motor startups, while the 90A rating absorbs the regenerative kick-back during motor deceleration. The P-channel architecture eliminates the charge-pump IC otherwise required for an N-channel high-side switch, saving cost and PCB area in the compact tool handle. The AEC-Q101 screening provides additional robustness for the shock and vibration environment.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IPD90P03P404ATMA2 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IPD90P03P4-04 | IPD50N06S409ATMA2 | NTR4101PT1G | Si7461DP-T1-E3 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | Vishay Intertechnology |
| Package | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | DPAK (TO-252-3) - same | DPAK (TO-252-3) - same |
| Polarity | P-Channel | P-Channel | N-Channel | P-Channel | P-Channel |
| Drain-Source Voltage (V(BR)DSS) | -30 V | -30 V | +60 V | -30 V | -30 V |
| Continuous Drain Current (TC) | -90 A | -90 A | +50 A | -23 A | -45 A |
主な差別化要因
- Lowest R DS(on) in Infineon P-channel DPAK family （vs NTR4101PT1G (onsemi))
- True automotive-grade P-channel at -30V （vs Si7461DP-T1-E3 (Vishay))
- P-channel high-side simplifies gate drive （vs IPD50N06S409ATMA2 (Infineon N-channel))
- Higher continuous drain current than closest cross-brand rival （vs NTR4101PT1G)
設計ノート
Estimated thermal analysis (TC = 25°C reference): at 30A continuous load and 4.5 mΩ R DS(on), conduction loss is I²R = 30² × 0.0045 = 4.05W. With the PG-TO252-3-11 DPAK thermal resistance of approximately 1.0°C/W junction-to-case, junction rise above case is only ~4°C. However, junction-to-ambient (RθJA ≈ 50°C/W on a 1 sq-in copper pour) limits steady-state dissipation; for sustained 20W+ operation, use 4+ square inches of drain copper or attach a small heatsink to the DPAK tab. Always verify against the datasheet SOA curves.
The DPAK tab is internally connected to Pin 2 (drain) and must be soldered to the drain copper pour for both electrical connection and thermal dissipation. Use thermal vias under the tab (typically 9-16 vias of 0.3mm drill) to spread heat to inner copper planes. Place input and output bulk capacitors as close to the source/drain pads as practical to minimize parasitic inductance during switching transients. Maintain a creepage distance of at least 1.5mm between drain and gate traces for 12V automotive designs.
For a P-channel high-side switch the gate must be driven NEGATIVE relative to the source (typically to ground) to turn ON. A common pitfall is leaving the gate floating during power-up, which can allow the miller capacitance of a high-dV/dt bus to partially turn on the device. Always include a gate-to-source pull-up resistor (10-100 kΩ) to keep the device OFF during controller reset. Also, verify VGS never exceeds ±20V - including during load-dump transients - otherwise the gate oxide will permanently damage.
When routing the gate trace, keep it short and away from the drain switching node to minimize dv/dt-induced gate coupling. A 10kΩ gate-source resistor plus a small (1-10kΩ) gate series resistor damps the gate-loop LC resonance. For switching frequencies above 50 kHz, add a small RC snubber (10Ω + 1nF) across source-drain to control ringing. Reference Infineon application note 'OptiMOS P-channel MOSFETs in 12V automotive high-side switching' for detailed layout examples.
コンプライアンス情報
AEC-Q101 qualified per Infineon OptiMOS P-channel family datasheet. RoHS and REACH compliant per DigiKey and Mouser product listings.
