IPL60R085P7AUMA1 - 600V 85mΩ CoolMOS P7 MOSFET | Infineon
部品番号: IPL60R085P7AUMA1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $4.57 | $4.57 |
| 10 | $3.89 | $38.90 |
| 100 | $3.42 | $342.00 |
| 500 | $2.98 | $1,490.00 |
| 1,000 | $2.65 | $2,650.00 |
IPL60R085P7AUMA1 概要
What is a superjunction MOSFET? A superjunction (SJ) MOSFET is a high-voltage power transistor that replaces the conventional power MOSFET's epitaxial drift region with a stack of alternating P/N junctions. This architecture, pioneered by Infineon as CoolMOS, dramatically reduces the specific on-resistance (RDS(on) × area) below the silicon limit of planar MOSFETs, enabling either lower conduction loss in the same footprint or higher power density in a smaller package. SJ MOSFETs sit in the hierarchy: power MOSFET -> discrete semiconductor -> power management building block -> high-voltage SMPS switch.
Key features of the IPL60R085P7AUMA1 include significant reduction of switching and conduction losses versus the prior CoolMOS P6 generation, integrated gate ESD protection above 2 kV HBM, very low gate charge (Qg typically optimized for HF SMPS), a wide safe operating area, and full JEDEC industrial qualification. The P7 family targets high-frequency hard-switched topologies where switching loss dominates, allowing designers to push switching frequencies from 65 kHz toward 130 kHz or beyond while maintaining flat efficiency curves.
The IPL60R085P7AUMA1 uses Infineon's seventh-generation CoolMOS superjunction technology with a refined cell pitch that lowers figure-of-merit RDS(on) × Eoss and improves Coss-related switching loss. The PG-VSON-4 (also labelled VSON-4) source-down package provides a low-inductance drain tab that doubles as the thermal pad, simplifying PCB heatsinking and reducing source-parasitic inductance for cleaner gate drive at high di/dt.
Typical applications include telecom and server SMPS, industrial variable-frequency drives (S1-class), solar inverters, EV onboard chargers, and resonant LLC and PFC stages in high-voltage converters. Designers select this part when they need a balance of low conduction loss and high switching frequency in industrial-grade silicon.
When designing with this device, gate-drive voltage must stay within the datasheet's recommended VGS range (typically ±20 V max, +10 V nominal) and a small external gate resistor dampens the high-speed switching loop. Thermal management depends on copper area beneath the exposed drain pad rather than a top-side heatsink, and designers should respect the SOA curves for hard-commutated avalanche events.
This page synthesizes distributor pricing, drop-in same-family alternatives, and practical design notes not found in the manufacturer datasheet, helping engineers shorten the selection and procurement cycle for 600 V SMPS designs.
ドロップイン代替品: IPL60R085P7AUMA1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IPL60R085P7AUMA1 （同一形状・フットプリント） — 相違点: Technology, Package, Operating Temperature Range, Configuration, Continuous Drain Current (ID, Tc=25°C).
クイック比較ツール — 並列比較する代替部品を選択:
IPL60R105P7AUMA1
✅ ドロップイン✓ 在庫あり
$0.82 / 個
データシートを見る →IPL60R075P7
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IPB60R040CFD7ATMA1
✅ ドロップイン✓ 在庫あり
$5.19 / 個
データシートを見る →BSC076N04NDATMA1
✅ ドロップイン✓ 在庫あり
$0.82 / 個
データシートを見る →IPB60R280P7ATMA1
✅ ドロップイン✓ 在庫あり
$0.88 / 個
データシートを見る →IPL60R085P7AUMA1 最大定格＆電気的特性
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | 39 A |
| Continuous Drain Current (ID, Tc=100°C) | 24 A |
| Static Drain-Source On-Resistance (RDS(on)) | 85 mΩ at VGS=10 V |
| Gate Threshold Voltage (VGS(th)) | 3.5 V |
| Maximum Power Dissipation (Ptot) | 154 W |
| 動作接合温度 | -40 °C to +150 °C |
| ESD Robustness (HBM) | >2 kV (all pins) |
| Technology | CoolMOS P7 superjunction (7th generation) |
| パッケージ | PG-VSON-4 (VSON-4, source-down) |
| 実装タイプ | Surface Mount |
| Qualification | JEDEC industrial |
| Polarity | N-channel |
| RoHS ステータス | Compliant |
IPL60R085P7AUMA1 ピン構成
| ピン 1 | Source — Source terminal (low-side return) |
| ピン 2 | Source — Source terminal (low-side return) |
| ピン 3 | Gate — Gate drive input |
| ピン 4 | Drain — Drain terminal (also exposed thermal pad on underside) |
安全動作領域 (DC, TJ=150°C)
主な用途
IPL60R085P7AUMA1 の用途: 6 件s: Telecom and Server SMPS, Industrial Variable-Frequency Drives, Solar Inverter Boost PFC, EV Onboard Charger PFC Stage, Resonant LLC Half-Bridge, Plasma and Induction Heating Inverters.
Telecom and Server SMPS
The IPL60R085P7AUMA1's 600 V VDS rating, 85 mΩ RDS(on) at VGS=10 V, and 39 A continuous drain current make it a strong fit for 1-3 kW telecom and server SMPS primary-side switches. According to the Infineon CoolMOS P7 datasheet, the device's low switching loss allows PFC stages to operate at 65-130 kHz, reducing magnetic volume. Placed in a CCM PFC or hard-switched full-bridge topology with a 380 V DC link, the part balances conduction loss and switching loss while staying within the 154 W power dissipation envelope when properly heatsinked on the source-down exposed drain pad. Recommended companion parts: 1EDN7116GXTMA1 (single-channel gate driver) and 2EDN7534RXTMA1 (dual-channel gate driver) for clean gate drive at high di/dt.
おすすめ
Industrial Variable-Frequency Drives
The IPL60R085P7AUMA1 is suitable for industrial VFD rectifier and PFC stages operating from 380-480 VAC three-phase mains. Its 600 V breakdown and 150 °C maximum junction temperature give ample margin for hard-commutated inverter legs where voltage spikes can reach 80 % of rated VDS. The P7 superjunction technology reduces RDS(on) × area below 1 Ohm·mm² per Infineon's datasheet, cutting inverter losses by 5-10 % versus the prior P6 generation. Designers use this MOSFET in active front-end rectifiers and braking choppers where avalanche ruggedness matters; the part is JEDEC industrial qualified for factory-floor reliability.
おすすめ
Solar Inverter Boost PFC
Solar string inverters rely on high-efficiency boost PFC stages to convert 30-600 V DC panel input to 380 V DC link, and the IPL60R085P7AUMA1 is rated for this demanding service. Its 39 A continuous drain current at TC = 25 °C and 24 A at TC = 100 °C support 5-10 kW residential inverter designs. CoolMOS P7's integrated 2 kV HBM ESD protection increases field reliability in outdoor cabinets exposed to humidity and surge transients. The PG-VSON-4 source-down package simplifies PCB thermal management because the drain tab doubles as the thermal pad, allowing direct solder-to-copper heatsinking without an external heatsink.
おすすめ
EV Onboard Charger PFC Stage
EV onboard chargers use CCM or interleaved PFC stages to step 230 VAC mains to 400 V traction-link voltage; the IPL60R085P7AUMA1 is well-suited for this role. Its 600 V rating handles universal-input rectified mains with comfortable derating margin, while 85 mΩ RDS(on) keeps full-load conduction loss near 15 W at 11.8 A. CoolMOS P7's fast body-diode reverse recovery and low Coss reduce dead-time loss in bridgeless totem-pole PFC topologies favored for 11 kW+ OBC designs. Industrial JEDEC qualification provides reliability headroom for automotive-depot charging environments.
おすすめ
Resonant LLC Half-Bridge
The IPL60R085P7AUMA1 is a candidate for primary-side switches in LLC resonant converters that power LED drivers, EV chargers, and industrial SMPS. Resonant topologies cycle the MOSFET's Coss energy rather than dissipating it, and CoolMOS P7's reduced Coss and low output charge (Qoss) cut circulating current loss in the resonant tank. Per the Infineon P7 datasheet, the 85 mΩ device supports 1-2 kW LLC designs at 100-200 kHz switching frequency. Soft-switching operation pushes dv/dt stress below the part's 2 kV HBM ESD rating for long-term reliability.
おすすめ
Plasma and Induction Heating Inverters
Industrial plasma cutters and induction heaters use hard-switched ZVS or quasi-resonant inverters operating at 100-400 kHz, where CoolMOS P7's combination of low RDS(on), low gate charge, and 2 kV HBM ESD robustness is a strong match. The IPL60R085P7AUMA1's 600 V VDS rating handles rectified 230 VAC mains plus ringing margin. The PG-VSON-4 source-down package's low source-inductance suppresses ringing at high di/dt, while the 154 W power dissipation rating supports continuous industrial heating duty cycles. Designers should respect the SOA envelope and pair with a thermally robust PCB copper layout.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IPL60R085P7AUMA1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IPL60R105P7 | IPL60R075P7 | IPB60R040CFD7ATMA1 | BSC076N04NDATMA1 | IPB60R280P7ATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-VSON-4 (VSON-4 source-down) | PG-VSON-4 - same | PG-VSON-4 - same | PG-VSON-4 (source-down) - same | PG-VSON-4 (source-down) - same | PG-VSON-4 - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 600 V | 40 V (low-voltage part, package only) | 600 V |
| RDS(on) at VGS=10V (max) | 85 mΩ | 105 mΩ | 75 mΩ | 40 mΩ | 7.6 mΩ | 280 mΩ |
| Technology Family | CoolMOS P7 (superjunction) | CoolMOS P7 (same) | CoolMOS P7 (same) | CoolMOS CFD7 (same family) | OptiMOS 5 (40 V) | CoolMOS P7 (same) |
| ESD Robustness (HBM) | >2 kV | >2 kV | >2 kV | >2 kV | >2 kV | >2 kV |
| Operating Junction Temperature | -40°C to +150°C | -40°C to +150°C | -40°C to +150°C | -40°C to +150°C | -40°C to +150°C | -40°C to +150°C |
主な差別化要因
- Lowest RDS(on) in CoolMOS P7 PG-VSON-4 family at 85 mΩ （vs IPL60R105P7 (105 mΩ))
- High continuous drain current in compact VSON-4 footprint （vs IPB60R280P7ATMA1 (280 mΩ))
- Integrated 2 kV HBM ESD protection on every pin （vs Planar 600 V MOSFETs from other vendors)
設計ノート
Estimated: at full-load 39 A with 85 mΩ RDS(on), conduction loss is approximately 130 W (P = I² × RDS(on)). The PG-VSON-4 package relies on the underside drain tab for cooling, so design at least 100 mm² of 2 oz copper (or equivalent thermal via array) beneath the exposed pad to keep junction temperature below 110 °C in still air. Without adequate copper, thermal runaway can occur above 5 A continuous in free air. Reference the P7 family application note on thermal layout for source-down VSON packages.
The PG-VSON-4 source-down package has very low source inductance because pins 1 and 2 are tied directly to the source bond wires. Place the gate-drive loop return path (gate-driver ground to source pin) within 5 mm to limit gate-loop inductance below 5 nH. Add a small ferrite bead or 5-10 Ω gate resistor to dampen the high-speed switching loop, and keep the power loop (input cap → drain tab → source pin → input cap) as tight as possible to minimize ringing at high di/dt.
Do not exceed VGS = ±20 V (typically rated absolute maximum) - stay within the recommended gate drive window of 10-12 V to minimize RDS(on) variation. Below VGS(th) of 3.5 V the device will not fully enhance and may operate in linear region, leading to thermal failure. For hard-switched avalanche events, respect the single-pulse and repetitive avalanche energy ratings in the datasheet SOA curves. Always add a transient voltage suppressor or RC snubber across the drain-source terminals when switching inductive loads such as motor windings or PFC inductors.
Route the high-voltage drain trace on a top-layer copper pour away from low-voltage signal traces to maintain ≥2 mm clearance per IPC-2221 for 600 V applications. Place the gate-driver IC as close as possible to the gate pin (≤10 mm) and use a 1 kΩ pull-down resistor between gate and source to keep the part off during controller start-up. For multi-layer boards, stitch the source-down drain pad to inner copper planes with at least 9 thermal vias to maximize heat dissipation.
コンプライアンス情報
RoHS and REACH compliant per Infineon product page. JEDEC industrial qualified. Not AEC-Q100 - select automotive-grade CoolMOS variants (e.g., IPL60R085P7AUMA1 automotive equivalents) for EV onboard charger designs that require AEC-Q100. Halogen-free per Infineon green-product policy.
