IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon
MPN: IPB60R040CFD7ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $8.12 | $8.12 |
| 10 | $7.3 | $73.00 |
| 100 | $6.49 | $649.00 |
| 500 | $5.84 | $2,920.00 |
| 1,000 | $5.19 | $5,190.00 |
IPB60R040CFD7ATMA1 Overview
A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate to control conduction between drain and source terminals. High-voltage superjunction MOSFETs like the CoolMOS CFD7 family employ a charge-balance pillar structure to break the classic silicon limit between breakdown voltage and on-resistance, achieving RDS(on) figures that are 5-10x lower than planar MOSFETs at the same voltage class. The CFD7 platform specifically addresses the body-diode reverse-recovery charge (Qrr) problem that historically limited high-voltage MOSFETs in bridge topologies.
Key differentiating features include a reduced gate charge (Qg) compared to CFD2 predecessors, an integrated fast body diode with low Qrr for hard-commutated bridge legs, a wide SOA for avalanche operation, and a dv/dt ruggedness of 50 V/ns typical. The 600 V drain-source breakdown (V(BR)DSS) provides a 100 V de-rating margin when operating from rectified 400 V bus rails, the standard industrial and renewable-energy DC link voltage. The 4 V typical gate threshold voltage (VGS(th)) allows direct 0-12 V gate drive from standard digital isolators and gate-driver ICs without negative bias requirements.
The superjunction (SJ) cell architecture pioneered by Infineon achieves its low RDS(on) by alternating N- and P-doped pillars in the drift region. This 3D charge-balance structure increases the doping concentration of the N-drift region without lowering the breakdown voltage, allowing the device to sustain 600 V while maintaining 40 mΩ on-resistance. The integrated fast body diode eliminates the need for an anti-parallel SiC or silicon diode in half-bridge and full-bridge configurations, reducing BOM cost and board area.
Typical applications include server and telecom switched-mode power supplies (SMPS), solar inverters and photovoltaic (PV) string converters, industrial welding power stages, EV onboard chargers (OBC), and induction-heating resonant tanks. In LLC converters the part's low Qrr enables operation at switching frequencies from 100 kHz to 500 kHz with negligible body-diode recovery loss. In phase-shift full-bridge (ZVS) converters it sustains the high dv/dt transitions that occur at the lagging-leg transitions during ZVS commutation.
When designing with this device, allocate at least 1 cm² of copper pour to the D2PAK tab to keep junction temperature within safe limits at full 227 W dissipation. Use a 10 Ω gate resistor and Kelvin-source connection where available to suppress gate ringing and prevent false triggering from Miller current. Always observe the 600 V maximum VDS rating with proper snubber design to absorb leakage-inductance spikes that can exceed nominal bus voltage by 20-30% during hard turn-off transients.
This page synthesizes distributor pricing, drop-in alternative cross-references, and practical design notes not found on the manufacturer product page, helping engineers shorten the bill-of-materials review cycle for high-voltage power-conversion designs.
Drop-in alternatives for IPB60R040CFD7ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
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STW56N60DM2
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IPB60R040CFD7ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | CoolMOS CFD7 |
| Technology | Superjunction (SJ) N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | 50 A |
| On-Resistance RDS(on) max @ VGS=10V | 40 mΩ |
| Gate Threshold Voltage VGS(th) typ | 4 V |
| Power Dissipation (Tc=25°C) | 227 W |
| Operating Temperature Range | -55°C to +150°C |
| Package | PG-TO263-3-2 (D2PAK) |
| Mounting Type | Surface Mount |
| Integrated Body Diode | Yes - ultra-fast CoolMOS CFD7 diode |
| MSL Level | 1 |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| Target Applications | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) |
IPB60R040CFD7ATMA1 Pin Configuration
| Pin 1 | Gate — Gate control input; standard 0-10V drive |
| Pin 2 | Drain — Power drain; connected to back tab (heatsink interface) |
| Pin 3 | Source — Power source return; Kelvin connection recommended for gate drive |
Safe Operating Area (DC, Tcase = 25°C)
Typical Applications
IPB60R040CFD7ATMA1 is suitable for 6 applications: LLC Resonant Half-Bridge Converter, Phase-Shift Full-Bridge (ZVS) Converter, Solar String Inverter / Photovoltaic Converter, EV Onboard Charger (OBC), Industrial Welding Inverter, Server & Telecom SMPS.
LLC Resonant Half-Bridge Converter
The IPB60R040CFD7ATMA1 is optimized for LLC resonant converters used in server SMPS and telecom rectifier applications, where its ultra-low body-diode reverse-recovery charge (Qrr) and CoolMOS CFD7 architecture directly enable high-frequency operation. In a 1-3 kW LLC converter operating from a 400 V DC bus, this MOSFET's reduced Qrr cuts dead-time loss by 30-50% versus CFD2 predecessors, allowing switching frequencies of 100-500 kHz without efficiency penalty. The 600 V breakdown with 100 V de-rating margin handles rectified 400 V bus transients, while the 50 A continuous drain current delivers 2-3 kW per phase. The D2PAK package's low thermal resistance (RthJC below 0.5 C/W typical) permits full-power operation with a 4 cm² copper pour on the PCB. Pair with Infineon EiceDRIVER 2EDL8024G4CXTMA1 for synchronous half-bridge control.
Recommended
Phase-Shift Full-Bridge (ZVS) Converter
In phase-shift full-bridge zero-voltage-switching (ZVS) converters, the IPB60R040CFD7ATMA1's fast body diode and low Qg enable reliable ZVS commutation across the full load range. This topology is standard for 1-5 kW industrial SMPS, welding inverters, and EV onboard charger power stages. The CFD7 platform's 50 V/ns dv/dt ruggedness prevents parasitic turn-on during the lagging-leg transition, a common failure mode in competitive parts. At VDS = 600 V, the device withstands the 400 V bus plus transformer leakage-inductance spike, typically 20-30% over nominal. The 40 mΩ RDS(on) keeps full-load conduction loss below 20 W at 25 A drain current, helping achieve 96-98% peak efficiency. Use Infineon IPB60R040CFD7ATMA1 as the primary switch on the lagging leg and IRFB3207ZPBF on the leading leg for optimized cost/performance split.
Recommended
Solar String Inverter / Photovoltaic Converter
The IPB60R040CFD7ATMA1 is a primary-side switch candidate for solar string inverters in the 1.5-5 kW residential and small-commercial class, where 600 V rating matches the rectified 400 V PV bus and the fast body diode enables bidirectional power flow. Its low RDS(on) of 40 mΩ minimizes conduction loss during continuous MPPT operation, while the CFD7's high avalanche energy rating (single-pulse EAS) tolerates reverse-current spikes from grid transients. In a 3 kW inverter the part typically dissipates 15-25 W at full power, manageable with a 6 cm² copper heatsink-less footprint. The D2PAK package's -55°C to +150°C operating range supports outdoor inverter enclosure temperatures from -25°C to +70°C without thermal de-rating. Combine with IKW40N120CS6KSA1 IGBTs for the auxiliary PFC stage.
Recommended
EV Onboard Charger (OBC)
The IPB60R040CFD7ATMA1 is well-suited for the DC-DC and PFC stages of 3.3-11 kW EV onboard chargers, where its 600 V rating handles rectified 400 V battery bus and the integrated fast body diode enables bridgeless PFC topologies. In a bridgeless totem-pole PFC, the MOSFET operates at 65 kHz with ZVS at AC line crossings, requiring ultra-low Qrr - exactly what CFD7 provides. The AEC-Q101 automotive grade variant (IPB60R040CFD7AUMA1) extends qualification to automotive applications. At 22 A continuous operation the part dissipates under 20 W, simplifying thermal management in the sealed IP67 charger enclosure. Pair with TLE9180D31QKXUMA1 automotive gate driver for functional-safety compliant designs.
Recommended
Industrial Welding Inverter
The IPB60R040CFD7ATMA1 is used in industrial welding inverter power stages operating at 20-100 kHz, where its 600 V rating handles rectified 380-480 V three-phase input and the fast body diode enables robust arc-load commutation. Welding inverters demand repetitive avalanche ruggedness during short-circuit and arc-strike events, and CFD7's high single-pulse EAS rating protects against these failure modes. The 227 W power dissipation capability allows 50 A continuous drain current at typical industrial ambient temperatures. The D2PAK package simplifies PCB layout versus TO-247 alternatives, supporting compact 5-15 kW inverter designs. Use with BTS3028SDRATMA1 high-side gate driver for direct logic-level control.
Recommended
Server & Telecom SMPS
The IPB60R040CFD7ATMA1 is a primary-side switch for 1-3 kW 80 PLUS Titanium-class server and telecom SMPS, where 96-98% peak efficiency targets demand the lowest switching and conduction losses. Its 600 V rating suits universal-input rectified PFC output (380-400 V DC bus), and the CFD7 fast body diode is critical for the LLC stage that follows the PFC. At 100 kHz LLC switching the part's low Qg (typically 50-70 nC) reduces gate-drive loss below 0.5 W per switch, while 40 mΩ RDS(on) limits conduction loss to 15-20 W at 25 A. The 50 A drain current rating supports 2-3 kW per phase with multi-phase interleaving for higher-power systems. Combine with TLS810B1LDV50XUMA1 auxiliary supply and XDPP1148100BXUMA1 digital controller.
Recommended
Recommended Products Summary
Engineering reference data for IPB60R040CFD7ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPB60R024CFD7ATMA1 | IPW60R040CFD7 | STW56N60DM2 | NTHL040N60S5H | STWA56N60DM2 |
|---|---|---|---|---|---|---|
| Package | PG-TO263-3-2 (D2PAK) | PG-TO263-3-2 (D2PAK) - same | TO-247 (THT) | TO-247 (THT) | TO-247 (THT) | D2PAK |
| Brand | Infineon | Infineon (same-brand) | Infineon (same-brand) | STMicroelectronics | onsemi | STMicroelectronics |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
| Continuous Drain Current (Tc=25°C) | 50 A | 60 A | 50 A | 56 A | 40 A | 56 A |
| RDS(on) max @ VGS=10V | 40 mΩ | 24 mΩ | 40 mΩ | 60 mΩ | 40 mΩ | 60 mΩ |
| Body Diode Qrr | Ultra-low (CFD7 optimized) | Ultra-low (CFD7) | Ultra-low (CFD7) | Low (MDmesh DM2) | Low | Low (MDmesh DM2) |
| Technology Platform | CoolMOS CFD7 superjunction | CoolMOS CFD7 superjunction | CoolMOS CFD7 superjunction | MDmesh DM2 | Shielded Gate MOSFET | MDmesh DM2 |
Key Differentiators
- Ultra-low body-diode reverse-recovery charge (vs STW56N60DM2)
- Lower RDS(on) available in same family and package (vs IPB60R024CFD7ATMA1)
- Industry-standard D2PAK package with broad tooling support (vs IPW60R040CFD7 (TO-247 through-hole))
Design Notes
Estimated: at full-load operation with ID=50A and RDS(on)=40mΩ, conduction loss alone is approximately P=I²R = 100W. The PG-TO263-3-2 (D2PAK) package typically has RthJC of approximately 0.5-0.7 C/W, so junction temperature rise above the case is 50-70°C. Allocate at least 6-10 cm² of 2oz copper pour to the drain tab on both PCB layers and stitch with 0.3mm thermal vias to maintain Tj below 125°C at 70°C ambient. For continuous 50A operation, an external heatsink is strongly recommended.
Use a Kelvin-source connection when driving the IPB60R040CFD7ATMA1: route the gate-driver return current directly to the source pin (pin 3) rather than through the power-source copper. This prevents source-inductance-induced gate-voltage spikes that cause parasitic turn-on during high-dv/dt switching transitions. Place the gate resistor (10-20Ω typ) and gate-source pull-down (10kΩ) within 5mm of the gate pin. Minimize the gate-driver-to-gate loop area to suppress ringing and EMI.
Do not exceed the 600V VDS rating under any operating condition - leakage-inductance spikes during hard turn-off can add 20-30% over the nominal DC bus voltage. Install a snubber (RC or RCD) across the transformer primary or MOSFET drain-source to clamp these spikes below 600V. The CFD7 body diode is fast but not failure-proof against repetitive avalanche; do not use body-diode conduction in hard-switched bridge legs - use synchronous rectification or ensure zero-voltage switching.
The 600V-class switching node of the IPB60R040CFD7ATMA1 is a primary EMI source in SMPS designs. Use a snubber (10-22Ω + 100-470pF) across the drain-source to slow the dv/dt and reduce common-mode EMI emission. The CFD7 family has a typical dv/dt of 50 V/ns, which is faster than planar MOSFETs; gate-resistance adjustment between 4.7-22Ω lets you trade off switching loss against EMI. Use a common-mode choke and Y-capacitors at the AC input for conducted EMI compliance per EN 55022 Class B.
Compliance Information
RoHS compliant and lead-free per Infineon product page. The ATMA1 suffix indicates Tape & Reel packaging with 13-inch reel. For automotive AEC-Q101 qualification, the IPB60R040CFD7AUMA1 variant is required. Halogen-free status not explicitly stated in verified data; treat as unknown unless confirmed against the latest Infineon material declaration.
