IPL65R070C7AUMA1 - 650V 70mΩ CoolMOS C7 MOSFET | Infineon
部品番号: IPL65R070C7AUMA1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.55 | $25.50 |
| 100 | $2.18 | $218.00 |
| 500 | $1.92 | $960.00 |
| 1,000 | $1.68 | $1,680.00 |
IPL65R070C7AUMA1 概要
A superjunction MOSFET is a power transistor that uses a deep-trench charge-balance structure to simultaneously achieve high blocking voltage and very low specific on-resistance, breaking the silicon limit of conventional planar MOSFETs. Within the power semiconductor taxonomy, superjunction MOSFETs sit between standard planar MOSFETs (typically <300V) and IGBTs (>600V high-current), enabling higher switching frequencies with lower conduction and switching losses than earlier generations. This makes them foundational building blocks for modern high-density AC-DC and DC-DC converters.
Key differentiating features include the C7 series' reduced gate charge (Qg typically <30 nC) for faster switching, integrated snubberless body diode for hard-commutated bridge topologies, and a Kelvin-source PG-VSON-4 package that minimizes source-inductance-driven dynamic losses. These characteristics combine to deliver efficiency improvements of 0.5-1.5% across the full load range of telecom and server SMPS designs versus older CoolMOS generations.
Typical applications include PFC boost stages in 1-3 kW server and telecom power supplies, LLC half-bridge primary-side switches in notebook adapters, solar inverters, EV charging auxiliary converters, and industrial SMPS. The combination of 650V rating, 70 mΩ RDS(on), and the thermally enhanced exposed-pad PG-VSON-4 package makes the IPL65R070C7AUMA1 particularly attractive for high-density, fan-less converter designs where board area and thermal performance are at a premium.
When designing with this part, pay attention to the Kelvin-source connection to avoid dynamic RDS(on) penalties, keep gate-drive loops tight to control ringing, and ensure PCB copper area under the exposed pad supports the 169W dissipation rating with proper thermal via arrays.
ドロップイン代替品: IPL65R070C7AUMA1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IPL65R070C7AUMA1 （同一形状・フットプリント） — 相違点: Technology, Package, Drain-Source Voltage (VDS), Series, Operating Junction Temperature.
クイック比較ツール — 並列比較する代替部品を選択:
IPL60R125C7AUMA1
✅ ドロップイン✓ 在庫あり
$2.1 / 個
データシートを見る →IPL65R090C7AUMA1
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
IPL65R105C7AUMA1
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
IPN95R3K7P7ATMA1
✅ ドロップイン✓ 在庫あり
$0.44 / 個
データシートを見る →IPL65R070C7AUMA1 最大定格＆電気的特性
| Manufacturer | Infineon Technologies |
| Series | CoolMOS C7 |
| Technology | Superjunction N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 650 V |
| Continuous Drain Current (ID) at TC=25°C | 28 A |
| On-Resistance RDS(on) max at VGS=10V | 70 mΩ (typical) |
| Power Dissipation (PD) at TC=25°C | 169 W |
| Avalanche Energy (EAS) | 171 mJ |
| 動作接合温度 | -55°C to +150°C |
| パッケージ | PG-VSON-4 (surface mount) |
| 実装タイプ | Surface Mount |
| Configuration | Single with built-in diode |
| Channel Type | N-Channel |
| RoHS ステータス | Compliant |
| Lead-Free | Yes |
IPL65R070C7AUMA1 ピン構成
| ピン 1 | Gate — Gate drive input (Kelvin gate reference) |
| ピン 2 | Drain — Power drain connection (exposed pad) |
| ピン 3 | Source — Power source return |
| ピン 4 | Kelvin Source — Kelvin-source reference for gate driver return (minimizes source-inductance losses) |
安全動作領域 (DC, TC=25°C)
主な用途
IPL65R070C7AUMA1 の用途: 6 件s: PFC Boost Stage (1-3 kW Server SMPS), LLC Half-Bridge Primary Switch, Solar Inverter Boost and Full-Bridge Stages, EV Charging Auxiliary Power Supply, Industrial SMPS / Welding Equipment, Telecom Rectifier Modules.
PFC Boost Stage (1-3 kW Server SMPS)
The IPL65R070C7AUMA1 is ideally suited as the active switch in continuous-conduction-mode (CCM) PFC boost converters for 1-3 kW server and telecom power supplies. Its 650V VDS rating provides ample headroom for universal AC input (85-305 VAC) rectified to 400V bulk, while the 70 mΩ typical RDS(on) keeps conduction losses low at 20-30A peak inductor current typical of 2kW PFC stages. The CoolMOS C7 superjunction architecture reduces switching losses versus planar MOSFETs at the 65-130 kHz switching frequencies common in modern server PSU designs, enabling 0.5-1.0% efficiency gains. Compared to older C3/C6 generations, the C7 series integrated snubberless body diode supports hard-commutated bridgeless PFC topologies without external clamping. The PG-VSON-4 Kelvin-source package further reduces dynamic RDS(on) penalties caused by source inductance, critical at the 30-50 A/ns dI/dt edges of CCM PFC.
おすすめ
LLC Half-Bridge Primary Switch
The IPL65R070C7AUMA1 serves as a primary-side switch in LLC resonant half-bridge converters commonly used in 100-500W notebook adapters and 1-2kW server PSU DC-DC stages. Its low 70 mΩ RDS(on) and reduced gate charge (typical C7 series Qg <30 nC) minimize both conduction and driving losses, critical when two switches commutate at 100-200 kHz in the LLC tank. The 650V rating tolerates the resonant overshoot above bulk rail voltage that occurs at light load, while the 169W power dissipation rating supports continuous high-current operation. The PG-VSON-4 surface-mount package enables compact SMD primary-side layouts replacing larger TO-220/TO-247 through-hole designs, contributing to adapter power density targets of 20-30 W/inch³. The integrated body diode is robust enough for the dead-time commutation in LLC primary bridges.
おすすめ
Solar Inverter Boost and Full-Bridge Stages
The IPL65R070C7AUMA1 is well-matched for solar string inverter power stages, where it can be deployed as either the boost switch in the MPPT stage or as a primary switch in a full-bridge/H-bridge inverter topology fed by 600V PV strings. Its 650V rating provides necessary transient margin above the 600V max Voc of typical residential PV strings, while the 70 mΩ RDS(on) achieves the >98% efficiency targets mandated by European and US solar inverter standards. The CoolMOS C7's fast body diode recovery supports high-frequency hard-switched bridge topologies up to 50 kHz, enabling smaller magnetics in the inverter design. For 5-10 kW residential inverters, paralleling two IPL65R070C7AUMA1 devices per switch position is a common layout to halve conduction loss. The PG-VSON-4 package with exposed thermal pad simplifies thermal management via PCB copper pours.
おすすめ
EV Charging Auxiliary Power Supply
The IPL65R070C7AUMA1 functions as the primary-side switch in 1-2 kW auxiliary power supplies embedded in EV charging stations (Level 2 AC chargers and DC fast chargers). These supplies provide isolated low-voltage rails (12V, 24V, 48V) for control electronics, contactors, fans, and communications modules, demanding high efficiency (>92%) and compact size. The 650V VDS rating comfortably handles the rectified 400-500V DC bus from the AC-DC PFC stage. The 70 mΩ RDS(on) keeps full-load conduction losses below 25W at 1.5kW, manageable without forced-air cooling. The CoolMOS C7's low gate charge reduces driver losses, simplifying the isolated gate-drive transformer design. PG-VSON-4 surface-mount construction suits the high-density SMD layouts typical of modern EV charger auxiliary SMPS.
おすすめ
Industrial SMPS / Welding Equipment
The IPL65R070C7AUMA1 suits industrial switched-mode power supplies and welding inverter front-end stages where high reliability under harsh thermal and electrical stress is required. Its 169W power dissipation rating and 150°C maximum junction temperature provide thermal margin for industrial environments with ambient temperatures up to 70-85°C. The 650V rating supports 3-phase 380-480 VAC rectified input commonly used in industrial automation. In welding inverter primary stages, the 70 mΩ RDS(on) handles pulsed currents above 50A while the integrated body diode's avalanche energy rating (171 mJ EAS) absorbs the inductive kickback from the welding transformer leakage inductance. PG-VSON-4 surface-mount package suits the high-vibration SMD assembly requirements of industrial SMPS, though conformal coating is recommended for humid environments.
おすすめ
Telecom Rectifier Modules
The IPL65R070C7AUMA1 is deployed in -48V telecom rectifier modules (typically 1-3 kW) that power cellular base stations and central-office equipment. These modules convert 85-305 VAC input to a regulated -54.5 VDC output with efficiency targets above 96% to reduce cooling costs in outdoor cabinets. The CoolMOS C7 serves as the PFC switch and/or the primary switch in the DC-DC stage. Its 70 mΩ RDS(on) at 70°C operating temperature (from thermal derating) maintains low conduction loss over the rectifier's 30-100% load range. The PG-VSON-4 Kelvin-source package is essential for full-power telecom operation where dynamic RDS(on) from source inductance would otherwise erode efficiency at high di/dt. The 650V VDS rating is ideal for the 400V bulk rail from bridgeless PFC front-ends.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IPL65R070C7AUMA1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IPL60R125C7AUMA1 | IPL65R090C7AUMA1 | IPL65R105C7AUMA1 | IPN95R3K7P7ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-VSON-4 | PG-VSON-4 (same) | PG-VSON-4 (same) | PG-VSON-4 (same) | PG-VSON-4 (same) |
| Drain-Source Voltage (VDS) | 650 V | 600 V | 650 V | 650 V | 950 V |
| On-Resistance RDS(on) typ at VGS=10V | 70 mΩ | 125 mΩ | 90 mΩ | 105 mΩ | 3700 mΩ |
| Technology Family | CoolMOS C7 (Superjunction) | CoolMOS C7 | CoolMOS C7 | CoolMOS C7 | OptiMOS P7 |
主な差別化要因
- Lowest RDS(on) in the IPL65R series C7 lineup （vs IPL65R090C7AUMA1)
- 650V rating vs 600V of IPL60R125C7AUMA1 （vs IPL60R125C7AUMA1)
- CoolMOS C7 superjunction vs older C3/C6 generations （vs IPL65R360C6 (older C6 series))
設計ノート
The PG-VSON-4 package separates the power source (pin 3) from the Kelvin-source (pin 4) for gate-drive return. Connect the gate-driver ground directly to the Kelvin-source pin (pin 4), not to the power source (pin 3), to avoid dynamic RDS(on) penalties from common-source inductance. Estimated: at 50 A/ns dI/dt and 5 nH source inductance, the dynamic loss penalty can exceed 30% of total switching loss without proper Kelvin routing. Keep the gate-drive loop (gate-driver -> gate -> Kelvin-source -> driver return) physically tight, ideally <5 mm² loop area, to suppress ringing and reduce EMI.
At full-load 169W power dissipation in PG-VSON-4, the thermal resistance junction-to-case is critical. Estimated: with PG-VSON-4 theta_JC of approximately 0.9°C/W, the junction-to-case temperature rise at 169W is 152°C, exceeding the 150°C Tj max. Therefore continuous operation at 169W PD requires case temperature maintained below -2°C, which is impossible - in practice, derate PD to 100-120W maximum with proper PCB heatsinking. Use a thermal via array (typically 9-16 vias of 0.3mm drill under the exposed pad) to a 2 oz copper inner-plane heatsink for adequate dissipation in PFC and LLC designs.
Use a star-point grounding scheme in the converter primary side: tie the gate-driver decoupling capacitor ground, the auxiliary supply ground, and the Kelvin-source pin 4 together at a single point near the MOSFET, then run a separate wider trace to the bulk capacitor negative terminal for power current return. This prevents high di/dt primary currents from flowing through the gate-driver ground and causing false triggering or excessive ringing. Recommended PCB layout uses 2 oz copper on top/bottom layers for the drain and source pads, with 1 oz inner layers stitching thermal vias.
Do not drive the gate above the absolute maximum VGS of ±20V (some CoolMOS C7 datasheets specify ±30V for short transients); use a 12-15V gate-drive supply via a dedicated gate-driver IC such as the IFX007TAUMA1 or similar. Avoid paralleling IPL65R070C7AUMA1 devices without series gate resistors to damp individual device oscillations - per Infineon application notes, even matched parts can oscillate at 100+ MHz due to PCB parasitic mismatch. For bridge topologies, observe minimum dead-time of 100-200 ns to prevent cross-conduction while keeping body-diode conduction losses low.
コンプライアンス情報
RoHS and lead-free compliant per Infineon product page. AEC-Q100 not applicable (industrial/consumer power MOSFET, not automotive qualified). For AEC-Q100 qualified equivalent, consult Infineon's automotive-grade MOSFET portfolio.
