IPL65R070C7AUMA1 vs IPL60R125C7AUMA1 比較
詳細な並列比較: IPL65R070C7AUMA1 メーカー: Infineon および IPL60R125C7AUMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPL65R070C7AUMA1 | IPL60R125C7AUMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.68 | $2.10 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS C7 | CoolMOS C7 |
| Technology | Superjunction N-Channel MOSFET | CoolMOS (superjunction) |
| Drain-Source Voltage (VDS) | 650 V | 600 V |
| Continuous Drain Current (ID) at TC=25°C | 28 A | — |
| Continuous Drain Current (ID) at TC=100°C | [DATA_NEEDED: ID at TC=100°C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | 70 mΩ (typical) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/range] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Power Dissipation (PD) at TC=25°C | 169 W | — |
| Avalanche Energy (EAS) | 171 mJ | — |
| 動作接合温度 | -55°C to +150°C | — |
| パッケージ | PG-VSON-4 (surface mount) | PG-VSON-4 (surface mount) |
| 実装タイプ | Surface Mount | Surface Mount |
| Configuration | Single with built-in diode | — |
| Channel Type | N-Channel | — |
| RoHS ステータス | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSLレベル | [DATA_NEEDED: MSL rating] | 1 (unlimited) |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Tc) | — | 17 A |
| On-State Resistance (RDS(on), max) | — | 125 mOhm |
| Power Dissipation (PD, Tc) | — | 103 W |
| Gate Threshold Voltage (VGS(th), typ) | — | 3.5 V |
| Gate Charge (Qg, typ) | — | [DATA_NEEDED: Qg value] |
| ピン数 | — | 4 (Gate / Drain / Drain / Source) |
| 動作温度範囲 | — | -55 C to +150 C (junction) |
| Channel Mode | — | Enhancement |
| Drive Voltage (recommended) | — | 10 V VGS |