IR2153STRPBF - 600V Self-Oscillating Half-Bridge Driver | Infineon
MPN: IR2153STRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.65 | $1.65 |
| 10 | $1.45 | $14.50 |
| 100 | $1.18 | $118.00 |
| 500 | $0.96 | $480.00 |
| 1,000 | $0.78 | $780.00 |
| 2,500 | $0.65 | $1,625.00 |
IR2153STRPBF Overview
A gate driver IC is a power-management semiconductor that translates low-power logic-level PWM commands from a controller into the high-current, high-voltage signals required to switch the gate of a discrete power MOSFET or IGBT. Half-bridge drivers specifically produce two complementary outputs (high-side and low-side) to drive a totem-pole arrangement of switches, which forms the basic building block of half-bridge, full-bridge, and Class-D switching topologies. The IR2153 sits in the hierarchy: gate driver IC -> half-bridge driver -> bootstrap driver -> high-voltage driver IC -> power management semiconductor.
Key features include a 600 V absolute maximum offset voltage on the high-side channel, integrated 15.6 V Vcc zener clamp, micropower startup (typical quiescent current under 100 uA from VCC), programmable oscillator frequency via external RT/CT, and tighter initial deadtime control for symmetric switching. The internal bootstrap MOSFET eliminates an external discrete, simplifying PCB layout. Compared to the older IR2151, the IR2153 adds a shutdown feature (1/6 VCC on CT pin) and increased UVLO hysteresis of 1 V.
Technically, the IR2153 uses a high-voltage level-shift circuit to translate the low-side ground-referenced logic into the floating high-side domain. Its deadtime is generated by the CT pin discharge slope and an internal threshold, giving predictable cross-conduction protection. The architecture is bipolar CMOS-DMOS (BCD) and is specified for -40C to +125C operation. For new designs, Infineon recommends the IRS2153D successor.
Typical applications include electronic ballasts for fluorescent and HID lamps, half-bridge and push-pull converters, Class-D audio amplifiers, small motor drivers, and any low-to-medium power offline switching supply where a self-oscillating topology eliminates the need for an external controller IC.
When designing with the IR2153, ensure the bootstrap capacitor (typically 100 nF to 1 uF ceramic) and supply bypass are placed close to the IC. Verify that the high-side floating supply voltage (VB-VS) stays above the UVLO threshold during the minimum high-side on-time to avoid high-side turn-off.
This page synthesizes distributor pricing across 7+ sources, drop-in alternatives in the same 8-SOIC footprint, and practical design notes that supplement the manufacturer datasheet.
Drop-in alternatives for IR2153STRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IR2153STRPBF (same form factor and footprint) β differing in Package, RoHS Status, Number of Outputs, Supply Voltage (VCC), Topology.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IR2153DSTRPBF
β Drop-Inπ Reference alternative (not in catalog)
IRS2153DSTRPBF
β Drop-Inβ In Stock
$0.42 / Unit
View Datasheet βIR2153SPBF
β Drop-Inβ In Stock
$0.86 / Unit
View Datasheet βIR21531STRPBF
β Drop-Inβ In Stock
$0.7 / Unit
View Datasheet βIR2103STRPBF
β Drop-Inπ Reference alternative (not in catalog)
IR2104STRPBF
β Drop-Inβ In Stock
$0.59 / Unit
View Datasheet βIR2153STRPBF Maximum Ratings & Electrical Characteristics
| Configuration | Half-Bridge |
| Number of Outputs | 2 (High Side / Low Side) |
| Offset Voltage (Max) | 600 V |
| Supply Voltage (VCC) | 10 V to 15.6 V (zener clamped) |
| Bootstrap Supply Voltage (VB) | VCC + 10 V to VCC + 15.6 V (clamped) |
| Source/Sink Current (Peak) | 200 mA / 400 mA |
| Output Current | 0.4 A |
| Propagation Delay | 1.2 us |
| Oscillator Type | Self-oscillating RC |
| Deadtime Control | Programmable via CT, tighter initial control |
| UVLO Hysteresis | 1 V |
| Shutdown Feature | 1/6 VCC threshold on CT pin |
| Operating Temperature | -40C to +125C |
| Package | 8-SOIC (3.90 mm width) |
| Mounting Type | Surface Mount |
| Lead Free / RoHS | Yes (PBF suffix) |
| MSL Level | 1 |
IR2153STRPBF Pin Configuration
| Pin 1 | VCC β Logic supply input (10-15.6 V, internally clamped) |
| Pin 2 | RT β Oscillator timing resistor to VCC |
| Pin 3 | CT β Oscillator timing capacitor (also shutdown input at 1/6 VCC) |
| Pin 4 | COM β Low-side gate drive return / ground |
| Pin 5 | LO β Low-side gate output (to lower MOSFET gate) |
| Pin 6 | VS β High-side floating supply return / half-bridge midpoint |
| Pin 7 | HO β High-side gate output (to upper MOSFET gate) |
| Pin 8 | VB β High-side floating bootstrap supply |
Typical Applications
IR2153STRPBF is suitable for 6 applications: Electronic Ballast for Fluorescent / HID Lamps, Class-D Audio Amplifier Output Stage, Half-Bridge / Push-Pull Switch-Mode Power Supply, Small Motor Driver (Half-Bridge Config), LED Driver with Resonant Half-Bridge Topology, Solar Microinverter / PV Optimizer.
Electronic Ballast for Fluorescent / HID Lamps
The IR2153STRPBF is the de-facto self-oscillating half-bridge driver for compact fluorescent and HID lamp ballasts because its integrated 600 V level shifter, internal oscillator, and deadtime control deliver a complete ballast driver with only an RT/CT timing network and a bootstrap capacitor. At a typical 230 V AC rectified bus, the high-side channel floats above 320 V DC, and the IR2153's 600 V rating gives a 2x safety margin during transients. The 200 mA source / 400 mA sink capability switches typical 600 V MOSFETs at 30-50 kHz efficiently, while the micropower startup draws under 100 uA quiescent current, satisfying standby power regulations.
Recommended
Class-D Audio Amplifier Output Stage
In Class-D audio amplifiers, the IR2153STRPBF drives a totem-pole output half-bridge up to a few hundred watts per channel. Its 600 V offset rating supports single-rail supplies up to +/-200 V, and the 200 mA / 400 mA gate-drive capability rapidly switches output MOSFETs to minimize transition loss and keep THD below 0.1%. The tight initial deadtime control prevents shoot-through currents that would otherwise waste power and degrade audio fidelity, while the integrated bootstrap MOSFET simplifies board layout and shrinks the audio amplifier PCB footprint.
Recommended
Half-Bridge / Push-Pull Switch-Mode Power Supply
The IR2153STRPBF forms the heart of low-to-medium power half-bridge and push-pull SMPS converters up to 300 W, including 48 V telecom bricks and 24 V industrial DC-DC bricks. Its 600 V rating handles 230 V AC rectified inputs directly, and the programmable oscillator (set by external RT/CT) lets designers trade frequency against magnetic size. The integrated 15.6 V VCC zener clamp removes an external regulator, while the micropower startup (under 100 uA quiescent) eases compliance with ErP and Energy Star standby rules. The shutdown pin (1/6 VCC on CT) adds fault input capability.
Recommended
Small Motor Driver (Half-Bridge Config)
The IR2153STRPBF drives small DC brushless motors and single-phase AC pumps in half-bridge configuration up to several hundred watts. Its self-oscillating topology eliminates an external PWM controller, dramatically reducing BOM cost in cost-sensitive appliance and HVAC equipment. The 600 V rating tolerates rectified 230 V AC bus transients, and the 1 V UVLO hysteresis prevents motor chattering near the under-voltage threshold. The CT-pin shutdown input provides a convenient interface for fault protection or external enable logic.
Recommended
LED Driver with Resonant Half-Bridge Topology
Resonant LLC and series-resonant half-bridges driving high-brightness LED arrays use the IR2153STRPBF as a self-oscillating gate driver, exploiting its adjustable deadtime for zero-voltage switching. At frequencies of 50-200 kHz, the 600 V offset rating handles rectified mains while the integrated 15.6 V zener clamp removes an external bootstrap regulator. This topology supports high-power LED street-lighting and horticultural fixtures with efficiencies above 92%, and the IR2153's micropower standby reduces quiescent loss to meet lighting efficiency regulations.
Recommended
Solar Microinverter / PV Optimizer
In small solar microinverters and PV module-level optimizers, the IR2153STRPBF provides a low-cost self-oscillating half-bridge driver for the push-pull primary stage of the DC-DC converter feeding the grid-tie inverter. Its 600 V rating handles the panel voltage plus margin, and the integrated bootstrap MOSFET eliminates the external diode, reducing BOM cost. The micropower startup draws under 100 uA quiescent, helping the optimizer meet night-time standby consumption regulations for grid-tied solar equipment.
Recommended
Recommended Products Summary
Engineering reference data for IR2153STRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IR2153DSTRPBF | IRS2153DSTRPBF | IR2153SPBF | IR21531STRPBF | IR2103STRPBF | IR2104STRPBF |
|---|---|---|---|---|---|---|---|
| Package | 8-SOIC (3.90 mm) | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same footprint, different pinout | 8-SOIC - same footprint, different pinout |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Offset Voltage (Max) | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
| Supply Voltage Range | 10-15.6 V (zener clamped) | 10-15.6 V (clamped) | 10-15.6 V (clamped) | 10-15.6 V (clamped) | 10-15.6 V (clamped) | 10-20 V | 10-20 V |
| Output Current (Source / Sink) | 200 mA / 400 mA | 200 mA / 400 mA | 200 mA / 400 mA | 200 mA / 400 mA | 200 mA / 400 mA | 130 mA / 270 mA | 130 mA / 270 mA |
| Oscillator | Self-oscillating RC (internal) | Self-oscillating RC | Self-oscillating RC | Self-oscillating RC | Self-oscillating RC | External PWM required | External PWM required |
| Bootstrap Diode | Integrated | Integrated | Integrated | Integrated | Integrated | Integrated | Integrated |
| Recommended for New Design | No (use IRS2153D) | Yes | Yes (recommended successor) | No | No | Yes | Yes |
Key Differentiators
- Integrated bootstrap MOSFET eliminates external diode (vs IR2103STRPBF (also internal) and many legacy drivers)
- Self-oscillating topology eliminates external PWM controller (vs IR2103STRPBF (requires external PWM source))
- Tighter initial deadtime control vs predecessor IR2151 (vs Legacy IR2151 (no internal oscillator deadtime matching))
- Higher output drive (200/400 mA) vs IR2151 (vs IR2151 (100/200 mA))
Design Notes
Place the bootstrap capacitor (typically 100 nF to 1 uF low-ESR ceramic) directly between pins 8 (VB) and 6 (VS) of the IR2153STRPBF with minimum trace length. Place the VCC bypass capacitor (100 nF ceramic in parallel with 10 uF electrolytic) directly across pins 1 (VCC) and 4 (COM). Long bootstrap traces increase parasitic inductance, causing high-side gate-drive voltage droop that can trip the UVLO threshold and produce partial high-side turn-off.
Estimated: at 50 kHz switching frequency, a 100 nF bootstrap capacitor supplies charge Q = I_gate * t_rise. For typical IRF840-class MOSFETs with Qg ~= 60 nC, the bootstrap droop per cycle is approximately 60 nC / 100 nF = 0.6 V, well within the IR2153's 1 V UVLO hysteresis. Increase C_bootstrap to 470 nF-1 uF for high-Qg IGBTs or for operation near minimum duty cycle where refresh time is short.
Do not exceed the maximum high-side offset voltage of 600 V during transient events. Use a TVS clamp or snubber across the half-bridge midpoint (VS pin) to limit ringing caused by MOSFET output capacitance and stray inductance. Also ensure that the CT pin discharge current at start-up does not falsely trigger the 1/6 VCC shutdown comparator - keep CT below 50% VCC during initial power-up by choosing RT/CT values per datasheet timing equations.
At moderate switching frequencies (under 100 kHz) and 200 mA peak gate current, the IR2153STRPBF typically dissipates under 50 mW in an 8-SOIC, well within its 150 C/W junction-to-ambient rating. However, switching large IGBTs at high frequency can push gate-drive dissipation into hundreds of mW; provide adequate copper pour (at least 50 mm^2) on COM and VCC pads to keep junction temperature below 110 C at 85 C ambient.
Keep the RT/CT timing network traces away from the HO and LO gate-drive traces and from the VS high-voltage midpoint trace. The RT and CT pins are high-impedance nodes sensitive to noise coupling; parasitic capacitance on CT of more than a few pF can shift the oscillator frequency and disturb the deadtime. Use a ground guard ring around the CT pin if the board layout forces close placement.
Compliance Information
PBF suffix indicates Pb-free lead finish. RoHS/REACH compliance confirmed by Infineon datasheet (PD60062 revP) and the product page at infineon.com/part/IR2153. Not AEC-Q100 qualified - this is a commercial/industrial-grade part.
