IR2153SPBF - 600V Self-Oscillating Half-Bridge Driver | Infineon
MPN: IR2153SPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.65 | $1.65 |
| 10 | $1.48 | $14.80 |
| 100 | $1.27 | $127.00 |
| 500 | $1.1 | $550.00 |
| 1,000 | $0.97 | $970.00 |
| 2,500 | $0.86 | $2,150.00 |
IR2153SPBF Overview
A half-bridge gate driver IC is a power-management building block that drives the high-side and low-side MOSFETs (or IGBTs) of a half-bridge converter from a single low-voltage control input. The IR2153 is part of the broader gate-driver hierarchy: gate driver -> half-bridge driver -> high-voltage gate driver -> power management IC -> semiconductor. Its self-oscillating topology places it in the SMPS controller family, where timing RT/CT sets the switching frequency and the internal logic adds the programmable deadtime needed to prevent shoot-through.
Key features include 600 V offset voltage tolerance on the high-side channel, 15.6 V gate-clamp for protecting logic-level MOSFETs, programmable oscillator frequency through external RT and CT, internal deadtime control, and a CT-pin shutdown that disables both gate outputs with a logic-low signal. The internal bootstrap structure requires only a single low-voltage supply, simplifying PCB layout and reducing external component count compared with discrete half-bridge implementations.
The architecture uses a CMOS 555-style oscillator feeding a high-side level shifter and a low-side driver, with both channels rated for negative transients on the switching node. This makes the part tolerant of the harsh dv/dt environment typical of half-bridge converters, and the integrated bootstrap diode (on the 'D' variant) further reduces BOM count. The RC input circuit category identifies it as programmable-timing, not fixed-frequency or PWM-controlled by an external MCU.
Typical applications include self-oscillating half-bridge converters for electronic ballasts, switch-mode power supplies under 200 W, electronic transformers for halogen lamp replacement, and motor-driver front ends. The shutdown pin makes it suitable for ballast protection circuits that need to disable both gates on lamp removal. The 8-SOIC footprint is pin-compatible with other 8-pin gate drivers in the IR215x family.
When designing, keep the high-side bootstrap diode external on the standard S-variant (the IR2153DPbF has the internal diode), select RT and CT to program the frequency per the datasheet curves, and verify deadtime meets the MOSFET turn-off specification. Layout should keep the CT pin trace short to avoid noise injection that can false-trigger shutdown.
This page synthesizes distributor pricing for the IR2153SPBF, drop-in same-family alternatives, and practical design notes not found in the manufacturer datasheet alone, helping engineers select, source, and qualify the part quickly.
Drop-in alternatives for IR2153SPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IR2153SPBF (same form factor and footprint) β differing in Package, Topology, Operating Temperature, Bootstrap Diode, Lead-Free / RoHS.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IR2153STRPBF
β Drop-Inβ In Stock
$0.65 / Unit
View Datasheet βIR2153DPbF
β Drop-Inπ Reference alternative (not in catalog)
IR2155PBF
β Drop-Inπ Reference alternative (not in catalog)
IR2151PBF
β Drop-Inπ Reference alternative (not in catalog)
IRS2001STRPBF
β Drop-Inπ Reference alternative (not in catalog)
IR2110SPBF
β Drop-Inβ In Stock
$1.98 / Unit
View Datasheet βIR2153SPBF Maximum Ratings & Electrical Characteristics
| Function | Half-Bridge Gate Driver |
| Input Type | RC (Self-Oscillating) |
| Number of Drivers | 2 (high-side + low-side) |
| High-Side Offset Voltage | Up to 600 V |
| Gate Clamp Voltage | 15.6 V (typ) |
| Configuration | Half-Bridge |
| Oscillator Topology | CMOS 555 timer equivalent (RT/CT) |
| Shutdown Feature | Yes (via CT pin, logic-low) |
| Bootstrap Diode | External (S-variant); internal on 'D' variant |
| Package | 8-SOIC (S) |
| Mounting Type | Surface Mount |
| Operating Temperature | -40C to +125C |
| Lead-Free / Pb-Free | Yes (PbF suffix) |
| RoHS Status | Compliant (PbF designation) |
| Topology | Self-Oscillating Half-Bridge Driver |
| Drive Logic | Non-Inverting (single-ended RC input) |
IR2153SPBF Pin Configuration
| Pin 1 | VCC β Logic and gate-drive supply voltage (12 V to 15 V typical; 15.6 V clamp) |
| Pin 2 | RT β Timing resistor connection (sets oscillator charge current) |
| Pin 3 | CT β Timing capacitor and shutdown input (low disables both gate outputs) |
| Pin 4 | GND β Logic and gate-driver ground return |
| Pin 5 | LO β Low-side gate-driver output (drives low-side MOSFET) |
| Pin 6 | VS β High-side floating supply return (half-bridge switching node) |
| Pin 7 | HO β High-side gate-driver output (drives high-side MOSFET) |
| Pin 8 | VB β High-side floating gate-drive supply (bootstrapped from VCC) |
Typical Applications
IR2153SPBF is suitable for 6 applications: Fluorescent Electronic Ballast, Electronic Transformer (Halogen Replacement), Auxiliary SMPS Half-Bridge Converter (<200 W), Induction Cooker / Heating Inverter, Motor Driver Half-Bridge Stage, Offline LED Driver (Simple Resonant Topology).
Fluorescent Electronic Ballast
The IR2153SPBF is a classic and widely deployed electronic ballast controller for fluorescent and HID lamps. Its 600 V high-side rating directly drives the half-bridge of T8/T5 fluorescent ballasts from 120/230/277 VAC mains without external level shifting. The internal CMOS 555-style oscillator lets designers program the switching frequency from approximately 20 kHz to 100 kHz with a single RT and CT, while the CT-pin shutdown feature enables lamp-removal or lamp-fault protection circuits that disable both gate outputs safely. Compared with discrete 555-timer + bootstrap designs, the IR2153SPBF shrinks the BOM, eliminates external deadtime circuitry, and provides 15.6 V gate clamping for MOSFET gate-oxide protection.
Recommended
Electronic Transformer (Halogen Replacement)
The IR2153SPBF is a workhorse for 12 V electronic transformer modules that replace conventional 50/60 Hz transformers for low-voltage halogen lamps. Its self-oscillating half-bridge topology converts 230 VAC mains into a high-frequency (>20 kHz) half-bridge drive, allowing a small ferrite-core step-down transformer to deliver 12 V/100 W efficiently. The integrated deadtime and 15.6 V gate clamp protect MOSFETs from shoot-through and gate over-stress, while the 8-SOIC footprint fits in compact lamp-base modules. Designers benefit from the 555-style timing programming (RT/CT) that matches classic offline SMPS design methodology and the wide 600 V high-side tolerance that covers rectified mains directly.
Recommended
Auxiliary SMPS Half-Bridge Converter (<200 W)
The IR2153SPBF is well suited for sub-200 W isolated half-bridge SMPS designs where simplicity and low BOM cost outweigh the need for closed-loop PWM control. Its self-oscillating architecture eliminates the PWM controller IC entirely, with the IR2153SPBF providing both the timing function and the half-bridge drive. The 600 V high-side rating supports universal-input (85-265 VAC) designs after the bridge rectifier and bulk capacitor. Compared with UC3842 + IR2110 designs, the IR2153SPBF reduces part count by one IC and simplifies the feedback loop because the converter operates open-loop or with simple secondary-side regulation. Its 8-SOIC footprint eases PCB layout in dense auxiliary supplies.
Recommended
Induction Cooker / Heating Inverter
The IR2153SPBF is used in low-cost induction cooking and induction-heating inverter front ends where the self-oscillating topology simplifies resonant-tank drive. Its 600 V rating covers rectified mains directly, while the programmable RT/CT lets designers tune the resonant frequency to match the induction coil and load pan. The CT-pin shutdown supports pan-removal detection and overtemperature latching circuits that disable both gate outputs safely. Compared with dedicated induction-cooker controllers like the IGBT-driver combo L6565+L6384, the IR2153SPBF offers lower cost and a smaller BOM at the expense of advanced features like soft-start and PFC. Suitable for sub-2 kW domestic induction cookers.
Recommended
Motor Driver Half-Bridge Stage
The IR2153SPBF can drive the half-bridge of small BLDC or brushed DC motor inverter stages up to 600 V bus voltage. Its CT-pin shutdown function integrates cleanly with external fault-detection circuits, allowing fast disable of the motor drive on overcurrent or sensor fault. The self-oscillating topology is appropriate for open-loop variable-frequency drives where the MCU cannot source a precise PWM signal directly. The 8-SOIC footprint is pin-compatible with other IR215x variants, giving designers an upgrade path (IR2153DPbF adds internal bootstrap diode, IR2153STRPBF is the tape-and-reel production version). Typical use cases include ceiling fans, small pumps, and 100-200 W appliance motors.
Recommended
Offline LED Driver (Simple Resonant Topology)
The IR2153SPBF is used in low-cost offline resonant LED-driver front ends where the self-oscillating topology drives a small high-frequency transformer from rectified mains. The 600 V high-side rating covers universal-input offline converters, and the integrated 15.6 V gate clamp protects standard-level MOSFETs used in the primary half-bridge. The CT-pin shutdown provides a simple thermal-protection interface, allowing an external NTC or comparator to disable the driver when the LED array overheats. Compared with dedicated PFC + LLC controller combos, the IR2153SPBF offers much lower BOM cost and smaller PCB footprint at the expense of power factor and dimming features.
Recommended
Recommended Products Summary
Engineering reference data for IR2153SPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IR2153STRPBF | IR2153DPbF | IR2155PBF | IR2151PBF |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | 8-SOIC | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same |
| High-Side Offset Voltage | 600 V | 600 V | 600 V | 600 V | 600 V |
| Gate Clamp Voltage | 15.6 V | 15.6 V | 15.6 V | 15.6 V | 15.6 V |
| Internal Bootstrap Diode | No | No | Yes | No | No |
| CT-Pin Shutdown | Yes | Yes | Yes | No | No |
| Topology | Self-Oscillating (RT/CT) | Self-Oscillating (RT/CT) | Self-Oscillating (RT/CT) | Self-Oscillating (RT/CT) | Self-Oscillating (RT/CT) |
| Packaging Format | Tube (95 pcs) | Tape & Reel (2500 pcs) | Tube | Tube | Tube |
| Unit Price (qty 1, approx, as of 2026-09-15) | $1.65 | $1.70 (approx) | $1.80 (approx) | $1.50 (approx) | $1.40 (approx) |
Key Differentiators
- Integrated CMOS 555-style oscillator eliminates external PWM controller (vs IR2110SPBF)
- CT-pin shutdown enables built-in fault protection (vs IR2155PBF)
- Lead-free / RoHS compliant (PbF suffix) (vs IR2153PBF (non-PbF))
- Tube packaging ideal for prototyping and low-volume production (vs IR2153STRPBF)
Design Notes
Keep the CT pin trace short and surround it with a ground guard ring to avoid noise injection that can false-trigger shutdown. Place RT close to the IR2153SPBF VCC pin to minimize timing jitter. The bootstrap diode (required for S-variant) and the high-side bypass capacitor must be placed within 5 mm of pins 7 (HO) and 8 (VB) to minimize parasitic inductance on the high-side floating supply. According to the Infineon datasheet, a 0.1 uF ceramic bypass on VCC and a 1 uF+ ceramic on VB are recommended values.
Route the VS trace (pin 6) directly to the half-bridge switching node; this node carries the high dv/dt that generates negative transients the IR2153SPBF must reject. Keep the low-side gate drive LO (pin 5) trace short and far from the high-side HO (pin 7) trace to avoid crosstalk. According to the Infineon datasheet, the high-side channel tolerates negative VS transients, but excessive negative transients can cause logic errors. Use a 4-layer PCB with a dedicated ground plane for offline applications to control EMI and improve noise immunity.
Estimated: at VCC=15 V, switching frequency=50 kHz, and a typical 1 nF MOSFET gate load, the IR2153SPBF gate-driver quiescent + switching losses total approximately 0.4 W per output channel. The 8-SOIC package has theta_JA of approximately 150 C/W, so total power dissipation of 0.8 W yields a junction rise of approximately 120 C above ambient - well within the 150 C max junction rating but with limited margin. For sustained high-frequency (>100 kHz) operation with large MOSFETs (>10 nC gate charge), consider the IR2153DPbF variant or add a small clip-on heatsink if ambient exceeds 70 C.
Common pitfalls when designing with the IR2153SPBF: (1) Forgetting the external bootstrap diode on the S-variant - the IR2153DPbF integrates it; if using the S-variant, a fast-recovery diode (UF4007 or better) and 1 uF/25 V bootstrap cap are required between VCC and VB. (2) Using RT or CT values outside the datasheet's recommended range causes erratic oscillation - keep RT between 1 kohm and 1 Mohm and CT between 1 nF and 1 uF. (3) Driving MOSFETs with Qg above approximately 50 nC without buffer stage - the IR2153SPBF can source/sink only ~250 mA typical at the gate outputs, so very large MOSFETs may need a discrete gate-driver buffer.
Compliance Information
RoHS compliant per the PbF suffix in the part number and Infineon product page. Not AEC-Q100 qualified - intended for industrial / commercial / consumer markets, not automotive. REACH compliant per Infineon material declaration. Halogen-free and conflict-minerals status not explicitly stated in the verified web data and left as unknown.
