IRF1010ZSTRLPBF - 55V 75A N-Channel MOSFET D2PAK | Infineon
部品番号: IRF1010ZSTRLPBF ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
IRF1010ZSTRLPBF 概要
A power MOSFET is a voltage-controlled semiconductor switch that regulates or switches electrical power in circuits. Within the power-management hierarchy, it sits alongside IGBTs and thyristors as a discrete power transistor: a MOSFET is a type of transistor, which is a type of semiconductor device used in switch-mode power supplies, motor drives, and load-switching stages. The N-channel enhancement-mode construction means the device conducts when the gate is driven positive relative to the source, offering lower on-resistance than equivalent P-channel parts.
Key features include Infineon advanced process technology (originally International Rectifier HEXFET), extremely low on-resistance per silicon area, a 175 C maximum junction operating temperature, fast switching speed, and an improved repetitive avalanche rating. These characteristics combine high efficiency with robustness in hard-switching and inductive-load environments.
Technically, the low RDS(on) of 7.5 mOhm minimizes conduction losses: Estimated: at 75 A, conduction loss is I2 x R = 75 x 75 x 0.0075 = about 42 W, so thermal design and copper pours on the drain tab are essential at high duty cycles. The low 63 nC gate charge reduces gate-drive losses in high-frequency converters, allowing smaller gate drivers and higher switching frequencies.
Typical applications include DC-DC converters and point-of-load power supplies, motor control and PWM motor drives, battery management and reverse-polarity protection in 12 V to 48 V systems, and high-current load switches in industrial and automotive-adjacent equipment.
A key design consideration: the D2PAK drain tab is electrically connected to the drain, so PCB copper area under the tab is both the main thermal path and a high-voltage node; maintain proper creepage and use multiple thermal vias.
This page synthesizes distributor pricing data, drop-in alternatives, design notes, and a parametric comparison not found together in the manufacturer datasheet.
ドロップイン代替品: IRF1010ZSTRLPBF — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IRF1010ZSTRLPBF （同一形状・フットプリント） — 相違点: Package, Technology, Total Gate Charge (Qg).
クイック比較ツール — 並列比較する代替部品を選択:
IRF1010ESTRLPBF
✅ ドロップイン✓ 在庫あり
価格はお問い合わせください
データシートを見る →AUIRF1010ZSTRLPBF
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRF1010ZSPBF
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRF1010ESPBF
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRF1010ZSTRLPBF 最大定格＆電気的特性
| Polarity | N-Channel |
| Operating Mode | Enhancement |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 55 V |
| Continuous Drain Current (Id) | 75 A at Tc |
| Continuous Drain Current (Id, distributor listing) | 94 A |
| Drain-Source On-Resistance (RDS(on)) | 7.5 mOhm |
| RDS(on) (alternate condition) | 14.0 mOhm |
| Total Gate Charge (Qg) | 63 nC |
| Power Dissipation (Pd) | 140 W at Tc |
| Junction Operating Temperature | 175 C (max) |
| パッケージ | D2PAK (TO-263), Surface Mount |
| 実装タイプ | Surface Mount |
| Technology | HEXFET Advanced Process Technology |
| Avalanche Rating | Improved repetitive avalanche rating |
| RoHS ステータス | RoHS3 Compliant (PBF lead-free suffix) |
IRF1010ZSTRLPBF ピン構成
| ピン 1 | Gate — Gate control terminal; drive relative to source to enhance conduction |
| ピン 2 | Drain — Drain terminal, electrically connected to the metal tab |
| ピン 3 | Source — Source terminal, return path for gate drive |
主な用途
IRF1010ZSTRLPBF の用途: 6 件s: DC-DC Power Converters, Motor Control and PWM Drives, Battery Management and Protection, High-Current Load Switches, Automotive and Heavy-Duty Auxiliary Systems, Welding and Inverter Power Stages.
DC-DC Power Converters
The IRF1010ZSTRLPBF fits buck and synchronous-rectifier DC-DC converters where a 55 V-rated low-side or high-side switch is needed. Its 7.5 mOhm on-resistance minimizes conduction loss at output currents of tens of amperes, while the low 63 nC total gate charge reduces gate-drive and switching losses, supporting higher switching frequencies and smaller magnetics. The improved repetitive avalanche rating adds robustness against transformer or inductor leakage energy. In a 12 V-input telecom or server power stage, this MOSFET delivers high efficiency without paralleling devices; designers should verify gate-drive voltage achieves the low-RDS(on) condition and use tight gate loops to limit ringing.
おすすめ
Motor Control and PWM Drives
In PWM motor drives for 12 V and 24 V brushed and brushless motors, the IRF1010ZSTRLPBF provides the fast switching speed and low on-resistance required for efficient H-bridge and half-bridge legs. The improved repetitive avalanche rating absorbs inductive kickback from motor windings when switching times and dead-time are imperfect, improving reliability in cost-sensitive drives. Its 175 C junction rating gives thermal margin in sealed enclosures. Place the MOSFET close to the motor supply bulk capacitor, use a dedicated gate driver with appropriate source-lead Kelvin returns where possible, and size the PCB copper under the drain tab for the expected RMS current and switching losses.
おすすめ
Battery Management and Protection
The IRF1010ZSTRLPBF serves as the main series or shunt switch in 12 V to 48 V battery protection and load-switch stages. Its very low 7.5 mOhm on-resistance keeps voltage drop and heat minimal at high continuous currents (for example, a 50 A discharge path dissipates only about 19 W at full conduction), while the 55 V rating tolerates charging transients. The enhanced avalanche capability guards against inductive wiring harness energy during hot-unplug events. Designers should drive the gate above the specified enhancement level for full RDS(on) performance and consider back-to-back configuration for reverse-current blocking in charge/discharge paths.
おすすめ
High-Current Load Switches
For industrial and networking equipment needing a solid-state high-current switch, the IRF1010ZSTRLPBF provides a simple single-device solution in D2PAK. The low on-resistance of 7.5 mOhm means the switch adds only millivolts of drop at tens of amperes, preserving supply rail accuracy, and the D2PAK tab soldered to a copper pour handles the resulting power without external heatsinks at moderate loads. Soft-start can be implemented with an RC on the gate to limit inrush into capacitive loads. Verify the 55 V rating covers any inductive load-dump above the rail, and consider a Zener gate clamp to protect Vgs.
おすすめ
Automotive and Heavy-Duty Auxiliary Systems
Although the standard-grade IRF1010ZSTRLPBF targets industrial use, its rugged HEXFET construction (175 C junction, repetitive avalanche rating) suits heavy-duty auxiliary loads such as winch controllers, heater elements, lighting ballasts, and pump drives in 12 V systems. For designs that must satisfy automotive qualification flows, the same-die AUIRF1010ZS variant (available in the identical D2PAK footprint) provides the qualified path without PCB redesign, per Infineon's standard-pin-out drop-in approach. In all cases, confirm the 55 V rating against jump-start and load-dump conditions typical of vehicle electrical systems, and thermally qualify the tab-to-heatsink interface for continuous high current.
おすすめ
Welding and Inverter Power Stages
Low-voltage, high-current inverters such as spot welders, DC arc inverters, and induction heaters benefit from the IRF1010ZSTRLPBF's combination of low on-resistance and avalanche ruggedness. Paralleling multiple D2PAK devices on a shared copper bus delivers the hundreds of amperes typical of these stages, and the positive RDS(on) temperature coefficient supports natural current sharing. The 63 nC gate charge keeps total drive power manageable when many devices are paralleled. Layout should use symmetric gate and source routing to prevent parasitic oscillation, and snubber design should account for the fast intrinsic switching speed documented in the manufacturer datasheet.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IRF1010ZSTRLPBF — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IRF1010ESTRLPBF | AUIRF1010ZSTRLPBF | IRF1010ZSPBF |
|---|---|---|---|---|
| Package | D2PAK (TO-263), Surface Mount | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same |
| Brand | Infineon (International Rectifier HEXFET) | Infineon | Infineon | Infineon |
| V(BR)DSS | 55 V | 60 V | 55 V | 55 V |
| RDS(on) | 7.5 mOhm | ~12 mOhm | 7.5 mOhm class | 7.5 mOhm |
| Continuous Drain Current | 75 A (Tc); 94 A (datasheet condition) | ~83 A | 75 A (Tc) class | 75 A (Tc) |
| Automotive Qualification | No (standard grade) | No | Yes (automotive grade) | No |
| RoHS / Pb-Free | RoHS3 compliant, Pb-free | RoHS compliant, Pb-free (PBF suffix) | RoHS compliant, Pb-free | RoHS compliant, Pb-free |
主な差別化要因
- Lowest conduction loss in the IRF1010 family （vs IRF1010ESTRLPBF)
- Automotive drop-in upgrade available on same footprint （vs AUIRF1010ZSTRLPBF)
- Improved repetitive avalanche ruggedness （vs IRF1010ESTRLPBF)
設計ノート
The 140 W rating is specified at controlled case temperature (Tc), not free air. Estimated: conduction loss at 75 A is I2 x RDS(on) = 75 x 75 x 0.0075 = about 42 W, which requires a substantial thermal path. Use maximum copper area under the drain tab (which is the drain node), an array of thermal vias to inner/outer ground-free copper, or a clip-on heatsink. Calculate junction temperature with the datasheet Rth(j-c) and Rth(j-a) values for your specific board stack-up before finalizing current limits.
The D2PAK drain tab is live drain, so keep other nets clear of the tab area and respect creepage to low-voltage circuitry. Solder the full tab footprint; partial soldering dramatically raises thermal resistance. Place the gate-drive resistor close to pin 1 with a short return to the source (pin 3) to minimize gate-loop inductance, and add a 10-20 ohm gate resistor if ringing appears at the gate during switching transitions.
Do not assume the headline current rating: 75 A (Tc) and 94 A reflect different datasheet conditions, so always derate from the datasheet current-vs-case-temperature curve for your real case temperature. Also confirm the gate-drive voltage reaches the RDS(on) test condition; at reduced Vgs the effective on-resistance (up to 14 mOhm region) roughly doubles conduction loss. Finally, verify avalanche energy against your load inductance rather than relying on the 'improved repetitive avalanche rating' qualitatively.
The fast switching speed of the HEXFET process generates high dv/dt and di/dt. In motor drives and converters, control EMI with a gate resistor (tune typically in the 5-47 ohm range), minimize the power loop area between the MOSFET, bus capacitor, and load, and consider a small RC snubber across the device if drain-voltage ringing exceeds margins. Measure ringing on a real board because parasitic inductance dominates the actual spectrum.
コンプライアンス情報
RoHS3 compliant per PartGenie compliance notes. The PBF suffix denotes lead-free (Pb-free) construction. AEC-Q100/Q101 qualification applies to the AUIRF1010ZS automotive variant, not this standard-grade part.
