IRF1010ESTRLPBF - 60V 84A N-Channel MOSFET | Infineon
部品番号: IRF1010ESTRLPBF ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
IRF1010ESTRLPBF 概要
A power MOSFET is a voltage-controlled semiconductor switch used in the power stage of virtually every electronic system, sitting within the hierarchy of power semiconductors beneath power management ICs and alongside IGBTs. The IRF1010ESTRLPBF belongs to the HEXFET family originally developed by International Rectifier, now part of Infineon Technologies, and uses a planar cell structure specifically chosen for its wide safe operating area (SOA).
Key features include a low on-state resistance of 12 mOhm at VGS=10V, a total gate charge of 86.6 nC, and a 100% avalanche energy tested ruggedness design. The planar architecture trades some figure-of-merit versus modern trench devices for substantially better SOA behavior, which matters in linear-mode and hard-switching applications.
Product qualification is performed according to JEDEC standards, and the part is multi-sourced across distribution partners for broad availability. The D2PAK package provides a large exposed drain tab for efficient heat transfer into the PCB copper pour, supporting the full 200 W (Tc) rating with adequate heatsinking.
Typical applications include DC-DC converter power stages, motor control H-bridges, battery-powered inverter and BMS switch stages, welding equipment, and UPS systems where high current and wide SOA are required.
Design consideration: keep gate drive at 10 V for the specified RDS(on); the part is not logic-level, so 3.3 V or 5 V microcontroller PWM outputs require a gate driver.
This page synthesizes verified distributor data, drop-in cross-references, and practical design notes not consolidated in the manufacturer datasheet.
ドロップイン代替品: IRF1010ESTRLPBF — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IRF1010ESTRLPBF （同一形状・フットプリント） — 相違点: Package, Technology, Mounting Type, RoHS Status, Operating Temperature Range.
クイック比較ツール — 並列比較する代替部品を選択:
IRF1407S
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRF2807ZS
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRFZ48STRLPBF
✅ ドロップイン📋 参考代替品（カタログ未掲載）
STB60NF06T4
✅ ドロップイン✓ 在庫あり
$0.7955 / 個
データシートを見る →VBL1615
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRF1010ESTRLPBF 最大定格＆電気的特性
| FET Type | N-Channel |
| Technology | HEXFET planar |
| Drain-Source Voltage (Vdss) | 60 V |
| Continuous Drain Current (Id) @ Tc | 84 A |
| Power Dissipation (Pd) @ Tc | 200 W |
| On-Resistance (RDS on) @ VGS=10V | 12 mOhm |
| Total Gate Charge (Qg) | 86.6 nC |
| Operating Mode | Enhancement |
| Drive Voltage | 10 V (standard level) |
| 実装タイプ | Surface Mount |
| パッケージ | D2PAK (TO-263) |
| Qualification | JEDEC standard qualified |
| Structure | Planar cell (wide SOA) |
| Avalanche Testing | 100% avalanche energy tested |
| Sourcing | Multi-vendor, broad distribution availability |
| Pb-Free / RoHS | PBF (Pb-free) suffix |
IRF1010ESTRLPBF ピン構成
| ピン 1 | G — Gate - voltage-controlled input terminal |
| ピン 2 | D — Drain - connected to metal tab for heat dissipation |
| ピン 3 | S — Source - return terminal for load current |
安全動作領域 (IRF1010ES, Tc=25C)
主な用途
IRF1010ESTRLPBF の用途: 6 件s: DC-DC Converter Power Stage, Motor Control H-Bridges, Battery Management and Protection Switches, Welding and Plasma Equipment, UPS and Inverter Systems, Automotive and Heavy-Duty Load Switches.
DC-DC Converter Power Stage
The IRF1010ESTRLPBF serves as the main switching element in buck, boost, and full-bridge DC-DC converters on 12 V to 48 V buses, where its 60 V rating provides headroom above 36 V battery systems. Its 12 mOhm on-resistance at VGS=10V limits conduction loss; estimated at 20 A the loss is I^2 x R = 4.8 W, manageable with a solid D2PAK copper pour. The planar wide-SOA cell tolerates hard-switching stress and ringing better than many trench devices, though the 86.6 nC gate charge demands a driver capable of several amps of gate current to keep switching losses low at frequencies above 50 kHz.
おすすめ
Motor Control H-Bridges
In brushed and brushless DC motor drives, the IRF1010ESTRLPBF's combination of 84 A continuous rating, 60 V breakdown, and planar-cell SOA makes it a rugged choice for H-bridge and three-phase legs driving 12 V/24 V motors. Stall and reversal events create simultaneous high current and elevated drain voltage; the wide safe operating area of the planar structure provides margin in these events where trench parts can hot-spot. Freewheeling through the intrinsic body diode is tolerated in low-frequency PWM (under 20 kHz). Place the device with the D2PAK tab on a dedicated copper heatsink area and observe dead-time to limit diode conduction loss.
おすすめ
Battery Management and Protection Switches
Battery disconnect, ideal-diode-OR, and protection FET stages in 24 V and 36 V Li-ion and lead-acid systems use the IRF1010ESTRLPBF as a low-loss series switch. At 30 A load, conduction dissipation is an estimated 10.8 W (I^2 x 12 mOhm), so two devices in parallel halve the per-part loss to about 5.4 W each. The 60 V rating covers charging transients and cell-balancing overvoltage conditions on 10-cell stacks. Because the part is standard-level drive, the BMS controller must include a 10-12 V charge pump or driver to achieve the rated on-resistance and avoid partial-enhancement heating.
おすすめ
Welding and Plasma Equipment
Inverter-based welders and plasma cutters stress switches with high peak currents and repeated overload events; the IRF1010ESTRLPBF's planar HEXFET structure and 100% avalanche energy testing are directly aligned with this environment. The 84 A (Tc) rating supports parallel arrays of four to six devices for 200 A-class output stages on 48 V buses. The wide SOA reduces derating anxiety during arc-start transients. Thermal design is the dominant constraint: each device's tab needs a bonded insulated substrate or large copper plane, and gate resistors should be chosen to damp ringing without excessive switching loss.
おすすめ
UPS and Inverter Systems
Line-interactive and double-conversion UPS units switch battery voltage (24 V to 48 V nominal) into high-frequency AC links, and the IRF1010ESTRLPBF fits the primary-side full-bridge at these voltages with margin under the 60 V limit. Its rugged avalanche rating helps absorb leakage-inductance spikes during load steps between line and battery mode. At 40 A pulses the low 12 mOhm on-state keeps conduction heat manageable; the 86.6 nC gate charge requires a robust push-pull driver. Layout should minimize the commutation loop area to control overshoot and EMI.
おすすめ
Automotive and Heavy-Duty Load Switches
High-current load switches for solenoids, pumps, heaters, and winches in 12 V and 24 V vehicle systems use the IRF1010ESTRLPBF as a robust low-side element. The 60 V rating absorbs inductive kick from solenoid and motor loads without external clamping in many designs, aided by 100% avalanche testing. Its planar SOA tolerates soft-start and linear pre-charge operation. For intelligent switching, pair with a protection controller providing current sense and fault latch-off. Estimated dissipation at a 25 A continuous load is 7.5 W, which sets the copper-pour requirement for the tab.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IRF1010ESTRLPBF — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IRF1407S | IRFZ48STRLPBF | STB60NF06T4 | VBL1615 |
|---|---|---|---|---|---|
| Package | D2PAK (TO-263) | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same |
| Brand | Infineon | Infineon | Vishay | STMicroelectronics | VBsemi |
| Vdss | 60 V | 75 V | 60 V | 60 V | 60 V |
| Continuous Drain Current | 84 A (Tc) | ~83 A (Tc) class | ~64 A class | ~60 A class | comparable to IRF1010ES class |
| RDS(on) | 12 mOhm | ~7.5-14 mOhm class | ~14 mOhm class | ~14 mOhm class | comparable |
| Technology | Planar HEXFET (wide SOA) | Planar HEXFET | HEXFET-derived | STripFET II trench | planar-equivalent design |
| Drive Level | Standard (10 V) | Standard (10 V) | Standard (10 V) | Standard (10 V) | Standard (10 V) |
| Lifecycle Status | Active | Active | Active | Active | Active |
主な差別化要因
- Wider safe operating area from planar cell structure （vs STB60NF06T4)
- Higher current rating in same footprint （vs IRFZ48STRLPBF)
- JEDEC qualification with multi-vendor sourcing （vs VBL1615)
設計ノート
The 200 W (Tc) and 84 A (Tc) ratings assume case held at 25C, which in practice means a large copper area or heatsink under the D2PAK tab. Estimated: at 40 A continuous, conduction loss is 40^2 x 0.012 = 19.2 W; use at least 1 square inch of 2 oz copper on the drain pad, or an insulated-metal substrate for sustained loads above 30 A. Derate linearly to zero at the maximum rated junction temperature and verify with thermal imaging during qualification.
This is a standard-level MOSFET: the 12 mOhm RDS(on) is specified at VGS=10V. Driving from a 5 V logic PWM output leaves the device partially enhanced, multiplying conduction loss and risking thermal runaway. Always use a gate driver delivering 10-12 V. The 86.6 nC total gate charge means switching at 50 kHz with a 10 Ohm gate resistor requires an estimated peak gate current of about 1.2 A - size the driver accordingly.
Minimize the drain-source power loop: place input bulk and decoupling capacitance directly across the bridge leg, keep the tab pour solid and stitched with multiple thermal vias to inner planes. Add a small series gate resistor (5-15 Ohm) close to the gate pin to damp parasitic oscillation from lead inductance. A gate-source pull-down resistor of 10 kOhm prevents float-turn-on during controller startup or brownout.
コンプライアンス情報
PBF suffix indicates Pb-free/RoHS version per PartGenie compliance notes (RoHS Lead-Free). JEDEC standard qualification per Infineon datasheet summary. Not an automotive AEC-Q100 qualified part per available data.
