IRF1010ZSTRLPBF - 55V 75A N-Channel MOSFET D2PAK | Infineon
Артикул: IRF1010ZSTRLPBF ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1.000 | $0 | $0,00 |
IRF1010ZSTRLPBF Обзор
A power MOSFET is a voltage-controlled semiconductor switch that regulates or switches electrical power in circuits. Within the power-management hierarchy, it sits alongside IGBTs and thyristors as a discrete power transistor: a MOSFET is a type of transistor, which is a type of semiconductor device used in switch-mode power supplies, motor drives, and load-switching stages. The N-channel enhancement-mode construction means the device conducts when the gate is driven positive relative to the source, offering lower on-resistance than equivalent P-channel parts.
Key features include Infineon advanced process technology (originally International Rectifier HEXFET), extremely low on-resistance per silicon area, a 175 C maximum junction operating temperature, fast switching speed, and an improved repetitive avalanche rating. These characteristics combine high efficiency with robustness in hard-switching and inductive-load environments.
Technically, the low RDS(on) of 7.5 mOhm minimizes conduction losses: Estimated: at 75 A, conduction loss is I2 x R = 75 x 75 x 0.0075 = about 42 W, so thermal design and copper pours on the drain tab are essential at high duty cycles. The low 63 nC gate charge reduces gate-drive losses in high-frequency converters, allowing smaller gate drivers and higher switching frequencies.
Typical applications include DC-DC converters and point-of-load power supplies, motor control and PWM motor drives, battery management and reverse-polarity protection in 12 V to 48 V systems, and high-current load switches in industrial and automotive-adjacent equipment.
A key design consideration: the D2PAK drain tab is electrically connected to the drain, so PCB copper area under the tab is both the main thermal path and a high-voltage node; maintain proper creepage and use multiple thermal vias.
This page synthesizes distributor pricing data, drop-in alternatives, design notes, and a parametric comparison not found together in the manufacturer datasheet.
Аналоги без доработки для IRF1010ZSTRLPBF — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с IRF1010ZSTRLPBF (тот же форм-фактор и посадочное место) — отличается по Package, Technology, Total Gate Charge (Qg).
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
IRF1010ESTRLPBF
✅ Прямая замена✓ В наличии
Уточнить цену
Открыть даташит →AUIRF1010ZSTRLPBF
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IRF1010ZSPBF
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IRF1010ESPBF
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IRF1010ZSTRLPBF Максимальные параметры и электрические характеристики
| Polarity | N-Channel |
| Operating Mode | Enhancement |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 55 V |
| Continuous Drain Current (Id) | 75 A at Tc |
| Continuous Drain Current (Id, distributor listing) | 94 A |
| Drain-Source On-Resistance (RDS(on)) | 7.5 mOhm |
| RDS(on) (alternate condition) | 14.0 mOhm |
| Total Gate Charge (Qg) | 63 nC |
| Power Dissipation (Pd) | 140 W at Tc |
| Junction Operating Temperature | 175 C (max) |
| Корпус | D2PAK (TO-263), Surface Mount |
| Тип монтажа | Surface Mount |
| Technology | HEXFET Advanced Process Technology |
| Avalanche Rating | Improved repetitive avalanche rating |
| Статус RoHS | RoHS3 Compliant (PBF lead-free suffix) |
Конфигурация выводов IRF1010ZSTRLPBF
| Контакт 1 | Gate — Gate control terminal; drive relative to source to enhance conduction |
| Контакт 2 | Drain — Drain terminal, electrically connected to the metal tab |
| Контакт 3 | Source — Source terminal, return path for gate drive |
Типичное применение
IRF1010ZSTRLPBF подходит для 6 применениеs: DC-DC Power Converters, Motor Control and PWM Drives, Battery Management and Protection, High-Current Load Switches, Automotive and Heavy-Duty Auxiliary Systems, Welding and Inverter Power Stages.
DC-DC Power Converters
The IRF1010ZSTRLPBF fits buck and synchronous-rectifier DC-DC converters where a 55 V-rated low-side or high-side switch is needed. Its 7.5 mOhm on-resistance minimizes conduction loss at output currents of tens of amperes, while the low 63 nC total gate charge reduces gate-drive and switching losses, supporting higher switching frequencies and smaller magnetics. The improved repetitive avalanche rating adds robustness against transformer or inductor leakage energy. In a 12 V-input telecom or server power stage, this MOSFET delivers high efficiency without paralleling devices; designers should verify gate-drive voltage achieves the low-RDS(on) condition and use tight gate loops to limit ringing.
Рекомендуется
Motor Control and PWM Drives
In PWM motor drives for 12 V and 24 V brushed and brushless motors, the IRF1010ZSTRLPBF provides the fast switching speed and low on-resistance required for efficient H-bridge and half-bridge legs. The improved repetitive avalanche rating absorbs inductive kickback from motor windings when switching times and dead-time are imperfect, improving reliability in cost-sensitive drives. Its 175 C junction rating gives thermal margin in sealed enclosures. Place the MOSFET close to the motor supply bulk capacitor, use a dedicated gate driver with appropriate source-lead Kelvin returns where possible, and size the PCB copper under the drain tab for the expected RMS current and switching losses.
Рекомендуется
Battery Management and Protection
The IRF1010ZSTRLPBF serves as the main series or shunt switch in 12 V to 48 V battery protection and load-switch stages. Its very low 7.5 mOhm on-resistance keeps voltage drop and heat minimal at high continuous currents (for example, a 50 A discharge path dissipates only about 19 W at full conduction), while the 55 V rating tolerates charging transients. The enhanced avalanche capability guards against inductive wiring harness energy during hot-unplug events. Designers should drive the gate above the specified enhancement level for full RDS(on) performance and consider back-to-back configuration for reverse-current blocking in charge/discharge paths.
Рекомендуется
High-Current Load Switches
For industrial and networking equipment needing a solid-state high-current switch, the IRF1010ZSTRLPBF provides a simple single-device solution in D2PAK. The low on-resistance of 7.5 mOhm means the switch adds only millivolts of drop at tens of amperes, preserving supply rail accuracy, and the D2PAK tab soldered to a copper pour handles the resulting power without external heatsinks at moderate loads. Soft-start can be implemented with an RC on the gate to limit inrush into capacitive loads. Verify the 55 V rating covers any inductive load-dump above the rail, and consider a Zener gate clamp to protect Vgs.
Рекомендуется
Automotive and Heavy-Duty Auxiliary Systems
Although the standard-grade IRF1010ZSTRLPBF targets industrial use, its rugged HEXFET construction (175 C junction, repetitive avalanche rating) suits heavy-duty auxiliary loads such as winch controllers, heater elements, lighting ballasts, and pump drives in 12 V systems. For designs that must satisfy automotive qualification flows, the same-die AUIRF1010ZS variant (available in the identical D2PAK footprint) provides the qualified path without PCB redesign, per Infineon's standard-pin-out drop-in approach. In all cases, confirm the 55 V rating against jump-start and load-dump conditions typical of vehicle electrical systems, and thermally qualify the tab-to-heatsink interface for continuous high current.
Рекомендуется
Welding and Inverter Power Stages
Low-voltage, high-current inverters such as spot welders, DC arc inverters, and induction heaters benefit from the IRF1010ZSTRLPBF's combination of low on-resistance and avalanche ruggedness. Paralleling multiple D2PAK devices on a shared copper bus delivers the hundreds of amperes typical of these stages, and the positive RDS(on) temperature coefficient supports natural current sharing. The 63 nC gate charge keeps total drive power manageable when many devices are paralleled. Layout should use symmetric gate and source routing to prevent parasitic oscillation, and snubber design should account for the fast intrinsic switching speed documented in the manufacturer datasheet.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для IRF1010ZSTRLPBF — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | IRF1010ESTRLPBF | AUIRF1010ZSTRLPBF | IRF1010ZSPBF |
|---|---|---|---|---|
| Package | D2PAK (TO-263), Surface Mount | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same |
| Brand | Infineon (International Rectifier HEXFET) | Infineon | Infineon | Infineon |
| V(BR)DSS | 55 V | 60 V | 55 V | 55 V |
| RDS(on) | 7.5 mOhm | ~12 mOhm | 7.5 mOhm class | 7.5 mOhm |
| Continuous Drain Current | 75 A (Tc); 94 A (datasheet condition) | ~83 A | 75 A (Tc) class | 75 A (Tc) |
| Automotive Qualification | No (standard grade) | No | Yes (automotive grade) | No |
| RoHS / Pb-Free | RoHS3 compliant, Pb-free | RoHS compliant, Pb-free (PBF suffix) | RoHS compliant, Pb-free | RoHS compliant, Pb-free |
Ключевые отличия
- Lowest conduction loss in the IRF1010 family (против IRF1010ESTRLPBF)
- Automotive drop-in upgrade available on same footprint (против AUIRF1010ZSTRLPBF)
- Improved repetitive avalanche ruggedness (против IRF1010ESTRLPBF)
Заметки по проектированию
The 140 W rating is specified at controlled case temperature (Tc), not free air. Estimated: conduction loss at 75 A is I2 x RDS(on) = 75 x 75 x 0.0075 = about 42 W, which requires a substantial thermal path. Use maximum copper area under the drain tab (which is the drain node), an array of thermal vias to inner/outer ground-free copper, or a clip-on heatsink. Calculate junction temperature with the datasheet Rth(j-c) and Rth(j-a) values for your specific board stack-up before finalizing current limits.
The D2PAK drain tab is live drain, so keep other nets clear of the tab area and respect creepage to low-voltage circuitry. Solder the full tab footprint; partial soldering dramatically raises thermal resistance. Place the gate-drive resistor close to pin 1 with a short return to the source (pin 3) to minimize gate-loop inductance, and add a 10-20 ohm gate resistor if ringing appears at the gate during switching transitions.
Do not assume the headline current rating: 75 A (Tc) and 94 A reflect different datasheet conditions, so always derate from the datasheet current-vs-case-temperature curve for your real case temperature. Also confirm the gate-drive voltage reaches the RDS(on) test condition; at reduced Vgs the effective on-resistance (up to 14 mOhm region) roughly doubles conduction loss. Finally, verify avalanche energy against your load inductance rather than relying on the 'improved repetitive avalanche rating' qualitatively.
The fast switching speed of the HEXFET process generates high dv/dt and di/dt. In motor drives and converters, control EMI with a gate resistor (tune typically in the 5-47 ohm range), minimize the power loop area between the MOSFET, bus capacitor, and load, and consider a small RC snubber across the device if drain-voltage ringing exceeds margins. Measure ringing on a real board because parasitic inductance dominates the actual spectrum.
Информация о соответствии
RoHS3 compliant per PartGenie compliance notes. The PBF suffix denotes lead-free (Pb-free) construction. AEC-Q100/Q101 qualification applies to the AUIRF1010ZS automotive variant, not this standard-grade part.
