IRF540 - 100V 22A N-Channel Power MOSFET | STMicroelectronics
部品番号: IRF540 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1.05 | $1.05 |
| 10 | $0.94 | $9.40 |
| 100 | $0.79 | $79.00 |
| 500 | $0.68 | $340.00 |
| 1,000 | $0.55 | $550.00 |
IRF540 概要
A power MOSFET is a voltage-controlled semiconductor switch that forms the top layer of the power semiconductor hierarchy: transistor -> MOSFET -> power MOSFET -> power management. Unlike bipolar junction transistors, MOSFETs are driven by gate voltage rather than base current, giving very high input impedance, fast switching, and low drive power. This makes them the default choice for switching converters, motor drives, and load switches in modern power electronics.
Key features of the IRF540 include its 100 V avalanche-rugged drain-source rating, repetitive avalanche data specified at 100 C, low total gate charge for efficient gate driving, high current capability up to 22 A (case temperature), and a 175 C maximum operating junction temperature. The 100% avalanche test in production guarantees uniform ruggedness against inductive kickback events, an important reliability differentiator versus non-avalanche-rated devices.
Architecturally, the IRF540 family is based on a vertical power MOSFET structure optimized for the classic industry-standard IRF pinout: gate, drain, source on the TO-220 tab package. The typical 0.050 ohm on-resistance limits conduction loss to roughly 12 W at a 22 A continuous load (estimated: I^2 x R = 22 A squared x 0.050 ohm), while the low gate charge reduces switching losses in PWM converters operating at tens to hundreds of kilohertz.
Typical applications include DC-DC converter switching stages, DC motor speed control and H-bridges, inverter and UPS output stages, and general-purpose high-current load switches. The 100 V rating comfortably covers 12 V, 24 V, and 48 V industrial buses with ample transient headroom, which is why the IRF540 remains a workhorse in both hobbyist and industrial designs.
Design-wise, drive the gate with at least 10 V for full enhancement and lowest RDS(on); logic-level drive at 5 V will substantially increase on-resistance. Always verify thermal margins with proper heatsinking, since the TO-220 package requires an effective thermal path at multi-watt dissipation.
This page synthesizes cross-manufacturer drop-in alternatives, parametric comparison data, and practical design notes beyond what a single datasheet provides, saving engineers cross-referencing time.
ドロップイン代替品: IRF540 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IRF540 （同一形状・フットプリント） — 相違点: Mounting Type, Package, RoHS Status, Technology.
クイック比較ツール — 並列比較する代替部品を選択:
IRF540NSTRLPBF
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$0.74 / 個
データシートを見る →IRF540PBF
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRF540NLPBF
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRF540
✅ ドロップイン✓ 在庫あり
$0.55 / 個
データシートを見る →IRF540
✅ ドロップイン✓ 在庫あり
$0.55 / 個
データシートを見る →IRF540 最大定格＆電気的特性
| FET Type | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (VDSS) | 100 V |
| Continuous Drain Current (ID) | 22 A (Tc) |
| Power Dissipation (PD) | 85 W (Tc) |
| RDS(on) Typical | 0.050 Ohm |
| RDS(on) Maximum at 10 V Gate Drive | 77 mOhm (family typ.) |
| 動作接合温度 | -55C to +175C |
| Avalanche Rating | Repetitive avalanche rated, 100% avalanche tested, data at 100C |
| パッケージ | TO-220 (through hole) |
| 実装タイプ | Through Hole |
| Configuration | Single |
| Technology | Avalanche-rugged power MOSFET |
| RoHS ステータス | unknown |
| Gate Drive Recommendation | 10 V for full enhancement |
IRF540 ピン構成
| ピン 1 | G — Gate - control terminal, drive with 10 V for full enhancement |
| ピン 2 | D — Drain - connected to metal mounting tab |
| ピン 3 | S — Source - return terminal, referenced to gate drive |
主な用途
IRF540 の用途: 6 件s: DC-DC Converter Switching Stage, DC Motor Speed Control and H-Bridges, Inverter and UPS Output Stages, High-Current Load Switches and Power Distribution, Solar Charge Controllers and Battery Management, Audio Amplifier and Class-D Output Stages.
DC-DC Converter Switching Stage
The IRF540 serves as the main switching element in buck, boost, and forward converters on 24 V and 48 V industrial buses, where its 100 V VDSS rating provides ample margin against voltage spikes. Its typical 0.050 ohm RDS(on) keeps conduction losses low at multi-ampere loads, and the low total gate charge permits efficient switching at PWM frequencies from 20 kHz to a few hundred kilohertz. Placed between the input bus and the power transformer or inductor with a 10 V to 12 V gate drive, the device adds minimal loss; the main design trade-off is switching loss, which rises linearly with frequency, so gate-drive strength and layout inductance must be minimized to preserve efficiency at the upper frequency range.
おすすめ
DC Motor Speed Control and H-Bridges
In PWM motor drives and H-bridge stages, the IRF540's avalanche-rugged 100 V rating absorbs the inductive kickback generated by motor windings during commutation, and every unit is 100% avalanche tested for repeatable ruggedness. The 22 A (Tc) continuous current capability covers most fractional-horsepower 12 V to 48 V motors. Body diodes provide a freewheeling path, though adding external Schottky diodes reduces reverse-recovery losses at high PWM frequency. The key performance consideration is gate drive: use a dedicated MOSFET driver at 10 V to ensure the device fully enhances, otherwise RDS(on) rises sharply and the TO-220 package can overheat under locked-rotor or stall current conditions.
おすすめ
Inverter and UPS Output Stages
The IRF540 is a proven choice for push-pull and full-bridge output stages in low-power inverters and uninterruptible power supplies operating from 24 V or 48 V battery banks. Its 100 V blocking rating handles the reflected voltage in transformer-coupled topologies, while 0.050 ohm typical on-resistance minimizes conduction loss during each half cycle, directly improving conversion efficiency and battery runtime. Devices must be paralleled with individual gate resistors to force current sharing. Because switching occurs at line-frequency or a few tens of kilohertz, switching loss is modest, and the dominant thermal concern is conduction dissipation, which the TO-220 package on a modest heatsink handles comfortably at 175C maximum junction temperature.
おすすめ
High-Current Load Switches and Power Distribution
As an electronic load switch, the IRF540 switches 10 A to 20 A rails in test equipment, industrial controllers, and battery systems. Its through-hole TO-220 format simplifies mechanical mounting on chassis or heatsink surfaces, and the 175C maximum junction temperature gives generous thermal margin in enclosed equipment. In soft-start applications, ramping the gate voltage with an RC network limits inrush current into downstream bulk capacitors, keeping the device within its safe operating area. The main pitfall is partial enhancement from logic-level drive: below about 8 V gate-source voltage, on-resistance rises well above the specified 50 mOhm, so a driver stage or charge pump is required when the control rail is 5 V or lower.
おすすめ
Solar Charge Controllers and Battery Management
In solar charge controllers, the IRF540 acts as the series or shunt switching element between the panel input and the battery bus. Its 100 V VDSS rating accommodates open-circuit panel voltages of 60 V to 75 V cold-condition systems with margin, and avalanche ruggedness protects against transient events from lightning-induced surges or load dumps. Low RDS(on) is critical here because the switch conducts continuously for hours: at a 15 A charge current, estimated conduction loss is about 11 W (15 A squared x 0.050 ohm), requiring heatsinking, while a lower-loss IRF540N substitute nearly halves that figure. Synchronous rectification configurations use a second IRF540 to replace the blocking diode, recovering several percent of charge efficiency.
おすすめ
Audio Amplifier and Class-D Output Stages
The IRF540 is used in Class-D audio amplifier output bridges and in linear audio amplifier power-switching and protection circuits. In Class-D half-bridge stages running at 200 kHz to 500 kHz from a plus/minus 50 V rail, its 100 V rating and moderate gate charge allow hard-switched operation with acceptable losses, and the 175C junction rating provides robustness against musical-signal thermal peaks. Complementary pairs are formed with P-channel equivalents such as the IRF9540. The key performance trade-off is dead-time management: too little dead time causes shoot-through conduction losses due to body-diode reverse recovery, so gate-drive timing must be carefully controlled with a dedicated Class-D modulator or driver stage.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IRF540 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IRF540N (ST) | IRF540PBF (Vishay) | IRF540 (Infineon) |
|---|---|---|---|---|
| Package | TO-220 (through hole) | TO-220 - same | TO-220AB - same | TO-220 - same |
| Brand | STMicroelectronics | STMicroelectronics | Vishay Intertechnology | Infineon (legacy International Rectifier) |
| Drain-Source Voltage (VDSS) | 100 V | 100 V | 100 V | 100 V |
| RDS(on) | 0.050 Ohm typical | approx. 44 mOhm max (lower loss) | 77 mOhm max | approx. 77 mOhm max |
| Lead-Free / RoHS | unknown | lead-free variant available | Yes (PBF = lead-free) | lead-free variant available |
| Avalanche Ruggedness | Repetitive avalanche rated, 100% tested | avalanche rated | repetitive avalanche rated | repetitive avalanche rated |
主な差別化要因
- Proven legacy availability across multiple manufacturers （vs IRF540N (STMicroelectronics))
- 100% avalanche tested in production （vs IRF540PBF (Vishay Intertechnology))
- Higher on-resistance than newer generation （vs IRF540N (STMicroelectronics))
設計ノート
Drive the gate to 10 V minimum. The IRF540 is a standard-threshold MOSFET: at 5 V VGS the channel is only partially enhanced, RDS(on) can rise several times above the specified 0.050 ohm typical, and the device may enter thermal runaway under load. Estimated: at 15 A with degraded on-resistance of 0.2 ohm, dissipation reaches 45 W - far beyond free-air TO-220 capability. Use a dedicated gate driver (e.g., a totem-pole or driver IC) with a 10 V to 12 V rail and place a 10 to 22 ohm gate resistor to damp ringing.
Size the heatsink from the conduction loss estimate: P = ID squared x RDS(on). Estimated: 10 A continuous gives 5 W; with a typical TO-220 junction-to-case resistance near 1 to 2 C/W plus heatsink-to-ambient resistance, choose a heatsink keeping junction below 125C for reliability margin against the 175C maximum. Use thermal paste and correct mounting torque (TO-220 typical 0.6 to 0.9 N-m) - a dry or over-torqued mount can double the effective thermal resistance.
Keep the gate drive loop short: route the driver output, gate resistor, source, and driver ground as a tight loop to minimize parasitic inductance, which causes gate ringing and spurious turn-on at high dV/dt. Add a low-impedance gate-source pull-down resistor (10 kOhm) so the MOSFET cannot float on during controller startup or when the driver is in high-impedance. In bridge topologies, verify dead time with an oscilloscope to prevent shoot-through through the body diode reverse recovery.
Do not rely on the intrinsic body diode for high-frequency freewheeling: its reverse recovery charge causes loss spikes and EMI at PWM rates above roughly 50 kHz - add an external Schottky in parallel for hard-switched bridges. Also verify the purchased variant's manufacturer: ratings differ between the STMicroelectronics IRF540 (22 A / 85 W) and the Vishay IRF540PBF (28 A / 150 W); always derate from the datasheet of the actual vendor on your BOM.
コンプライアンス情報
RoHS status of the base IRF540 ordering code is not stated in the provided data; the Vishay IRF540PBF variant is explicitly lead-free (PBF suffix). Choose PBF/RoHS-suffixed order codes for compliant assemblies.
