IRFR5505TRPBF - P-Channel 55V 18A HEXFET MOSFET | Infineon
部品番号: IRFR5505TRPBF ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0.95 | $0.95 |
| 10 | $0.85 | $8.50 |
| 100 | $0.72 | $72.00 |
| 500 | $0.62 | $310.00 |
| 1,000 | $0.55 | $550.00 |
| 2,500 | $0.48 | $1,200.00 |
IRFR5505TRPBF 概要
A P-channel MOSFET is a type of field-effect transistor in which the conducting channel is formed by positively charged carriers (holes) when a negative gate-source voltage is applied. P-channel devices occupy a distinct branch of the broader MOSFET family (which includes N-channel MOSFETs) within the discrete-semiconductor category, sitting under the wider umbrella of power-switching transistors and semiconductor switches. Their inherent high-side switching simplicity eliminates the charge-pump or bootstrap circuitry required by N-channel devices in many topologies, at the cost of higher RDS(on) for a given die size.
Key features include a maximum continuous drain current of -18 A at TC = 25 C, pulsed drain current of -72 A, and a maximum power dissipation of 57 W at TC = 25 C. The TO-252AA package provides a low thermal resistance (junction-to-case) of 2.2 C/W, enabling compact designs without external heatsinking at moderate loads. The device is rated for an operating junction temperature range of -55 C to +175 C and includes an avalanche-rated single-pulse capability.
The IRFR5505TRPBF utilizes advanced process technology that combines low on-resistance per silicon area with fast switching speeds and ruggedized device design. This combination provides an extremely efficient and reliable device for use in a wide variety of applications including DC-DC converters, motor drives, and load switching where P-channel high-side switching is preferred. The DPAK package is optimized for surface-mount manufacturing and offers an exposed drain tab that doubles as the thermal pad.
Typical applications include high-side load switching in industrial 24V/36V systems, P-channel synchronous rectifier replacements, battery protection and reverse-polarity blocking in portable equipment, and DC motor control. The wide operating voltage range and avalanche ruggedness also suit automotive ECU loads and power-rail OR-ing.
When designing with this device, ensure the gate-source voltage stays within the +/-20 V absolute maximum to prevent oxide rupture. Use a gate resistor (typically 10-100 ohm) to limit ringing, and add a TVS or Zener clamp on the gate if the gate drive exceeds +/-20 V during transients. Verify SOA at the operating VDS and ID combination before deployment, particularly when switching inductive loads.
This page synthesizes distributor pricing, drop-in same-package alternatives, parametric comparison tables, and practical design notes not found in the manufacturer datasheet alone.
ドロップイン代替品: IRFR5505TRPBF — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IRFR5505TRPBF （同一形状・フットプリント） — 相違点: Technology, Package, Total Gate Charge (Qg), Continuous Drain Current (ID) at TC=25C, Lead-Free / RoHS.
クイック比較ツール — 並列比較する代替部品を選択:
IRFR5505TRLPBF
✅ ドロップイン✓ 在庫あり
$0.38 / 個
データシートを見る →IRFR5305PBF
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRFR5410PBF
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRFR024NTRPBF
✅ ドロップイン✓ 在庫あり
$0.31 / 個
データシートを見る →IRFR5505PBF
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRFR5505TRPBF 最大定格＆電気的特性
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Series | HEXFET |
| Polarity | P-Channel |
| Technology | IR MOSFET (HEXFET 5th generation) |
| Drain-Source Voltage (VDS) max | -55 V |
| Continuous Drain Current (ID) at TC=25C | -18 A |
| Pulsed Drain Current (IDM) | -72 A |
| Gate-Source Voltage (VGS) max | +/-20 V |
| On-Resistance RDS(on) max at VGS=-10V | 110 mOhm |
| Total Gate Charge (Qg) | 21.3 nC |
| Maximum Power Dissipation (PD) at TC=25C | 57 W |
| 動作接合温度 | -55 C to +175 C |
| Thermal Resistance Junction-to-Case (RthJC) | 2.2 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA) | 50 C/W (typical, DPAK on 1 oz copper) |
| パッケージ | TO-252AA (DPAK), surface mount |
| 実装タイプ | Surface Mount |
| RoHS ステータス | Compliant (PBF suffix) |
| Lead-Free | Yes (PBF suffix) |
IRFR5505TRPBF ピン構成
| ピン 1 | GATE — Gate control input |
| ピン 2 | DRAIN — Drain terminal (also connected to metal tab) |
| ピン 3 | SOURCE — Source terminal |
| ピン TAB | DRAIN — Metal tab is electrically common to Drain; serves as thermal pad |
安全動作領域 - IRFR5505TRPBF (TO-252AA / TC=25C)
主な用途
IRFR5505TRPBF の用途: 6 件s: High-Side Load Switching (24V Industrial Bus), Battery Reverse-Polarity Protection, P-Channel Synchronous Rectifier Replacement, DC Motor Drive / H-Bridge High-Side Switch, Automotive ECU Load Switching, Power-Rail OR-ing / Redundant Supply Switching.
High-Side Load Switching (24V Industrial Bus)
The IRFR5505TRPBF is well-suited to high-side load switching on industrial 24V and 36V buses, where its P-channel topology eliminates the need for a charge pump or bootstrap circuit that an N-channel MOSFET would require. With VDS = -55 V, the device provides 30% voltage headroom above a 24V nominal bus, and the 110 mOhm RDS(on) keeps conduction loss at 3.6 W when switching an 18 A continuous load. Placed between the 24V supply and the load, the MOSFET is fully enhanced by tying the gate to ground; pulling the gate up to 24V turns the device off. This simplifies gate drive and reduces BOM cost compared to N-channel + driver alternatives.
おすすめ
Battery Reverse-Polarity Protection
In battery-powered portable equipment, the IRFR5505TRPBF serves as a reverse-polarity protection switch by placing its source at the battery positive terminal and drain at the load. Under correct polarity, the gate is pulled low through a resistor, fully enhancing the MOSFET to drop only 110 mOhm x ID; for a 5 A load, that is just 2.75 W of dissipation in a small DPAK footprint. If the battery is reversed, the body diode becomes reverse-biased, blocking current flow and protecting downstream circuitry. The 55V VDS rating handles multi-cell lithium battery stacks with 6S-12S configurations safely.
おすすめ
P-Channel Synchronous Rectifier Replacement
In low-voltage buck converters where a P-channel MOSFET is used as the high-side switch, the IRFR5505TRPBF can replace older P-channel devices that have become obsolete or expensive. With a 21.3 nC total gate charge, the device can be driven by a simple MOSFET driver IC from a 10-100 ohm gate resistor, and the 110 mOhm RDS(on) at VGS = -10 V provides competitive efficiency at switching frequencies of 100-500 kHz. The P-channel topology also avoids the need for a bootstrap capacitor on the high-side driver, simplifying PCB layout. Suitable for 5V-24V input buck converters in distributed power architectures.
おすすめ
DC Motor Drive / H-Bridge High-Side Switch
For H-bridge DC motor drivers in robotics and small EV applications, the IRFR5505TRPBF serves as the high-side switch in each half-bridge, complementing an N-channel low-side MOSFET on the same board. The P-channel high-side switch is driven by a simple gate-low-on / gate-high-off signal from the MCU or motor driver, with no charge pump needed. With 18 A continuous and 72 A pulsed drain current, the device handles motor stall currents and inrush without damage. The TO-252AA package exposes the drain tab for direct heatsink attachment, critical for continuous high-current PWM operation at low speed.
おすすめ
Automotive ECU Load Switching
The IRFR5505TRPBF is suitable for automotive ECU load switching where loads such as solenoids, lamps, and motors are driven from the 12V or 24V vehicle bus. The 55V VDS rating provides substantial margin over load-dump transients up to 35V, and the ruggedized HEXFET design handles the harsh electrical environment of automotive systems. Note that this part is NOT AEC-Q100 qualified, so for safety-critical or under-hood applications the AEC-Q100 qualified variant should be selected instead. Designers can use the IRFR5505TRPBF in body-electronics ECUs (interior lighting, accessory control) where AEC-Q100 is recommended but not strictly required.
おすすめ
Power-Rail OR-ing / Redundant Supply Switching
In redundant power systems where two supplies feed a common load, the IRFR5505TRPBF acts as an OR-ing MOSFET to isolate the supplies and prevent current backflow when one supply is down. With 110 mOhm RDS(on), the device drops only 1.1V at 10 A load - much less than a Schottky diode's 0.5-1.0 V drop, saving 5-10W per rail. The P-channel configuration simplifies the OR-ing control circuit: simply connect the gate to the lower of the two supply rails through a resistor, so the MOSFET turns off whenever its supply drops below the other. The 55V rating handles 48V telecom bus OR-ing applications as well.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IRFR5505TRPBF — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IRFR5505TRLPBF | IRFR5305PBF | IRFR5410PBF | IRFR024NTRPBF | IRFR5505PBF |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | N-Channel | P-Channel |
| VDS max (V) | -55 V | -55 V | -55 V | -100 V | -55 V | -55 V |
| Continuous Drain Current (A) | -18 A | -18 A | -31 A | -13 A | -17 A | -18 A |
| RDS(on) max at VGS=10V (mOhm) | 110 mOhm | 110 mOhm | 65 mOhm | 200 mOhm | 75 mOhm (N-ch) | 110 mOhm |
主な差別化要因
- Higher continuous drain current than the IRFR024NTRPBF alternative （vs IRFR024NTRPBF)
- Higher current rating than IRFR5410PBF at lower RDS(on) （vs IRFR5410PBF)
- Lower RDS(on) than typical P-channel competitors in same package （vs Generic P-channel DPAK alternatives)
設計ノート
The TO-252AA (DPAK) package has a junction-to-case thermal resistance of 2.2 C/W, but the junction-to-ambient resistance is 50 C/W typical on a standard 1 oz copper 1 square inch pad. Estimated: at Pdiss = 5 W continuous (e.g., 24V to 12V drop at 4 A load), junction temperature rises 250 C above ambient - which would exceed the 175 C max. For continuous loads above 2-3 W, add a small clip-on heatsink or expand copper area to at least 4 square inches to bring RthJA below 25 C/W.
Place the DPAK footprint so that the metal drain tab is connected to a thermal copper pour on the PCB top layer, with thermal vias stitching to a bottom-layer copper plane. The thermal pad must be electrically floating from the source and gate traces - because the tab is electrically common to the drain, a short to ground or signal traces would cause catastrophic failure. Use multiple thermal vias (typically 6-12) under the tab for low thermal resistance to the bottom plane.
Do not exceed the +/-20 V gate-source absolute maximum, even briefly. Use a 10-100 ohm gate resistor to limit ringing and peak dv/dt-induced gate overvoltage, and add a 12-15 V Zener from gate to source if the gate driver can produce transients above 20 V. For P-channel circuits where the gate is pulled up to the supply rail, ensure the supply does not exceed 20 V under transients - otherwise the gate oxide will rupture and the device will fail short.
Minimize the loop area between the source, drain, and decoupling capacitors to reduce switching transients and EMI. Keep the gate drive trace short and direct - long gate traces act as antennas that couple switching noise back into the gate and can cause parasitic oscillation. For high-frequency switching (>100 kHz), add a ferrite bead or small resistor in series with the gate to dampen ringing. Place the gate driver IC within 10 mm of the gate pin when possible.
コンプライアンス情報
RoHS compliant and lead-free per the PBF suffix in the part number. AEC-Q100 qualification is not available for this part - for safety-critical automotive applications, consult Infineon for the automotive-qualified variant. Conflict minerals compliance per Infineon supply chain policy.
