IRFR5305TRLPBF - -55V P-Channel MOSFET, 31A, 65mΩ | Infineon
部品番号: IRFR5305TRLPBF ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0.85 | $0.85 |
| 10 | $0.72 | $7.20 |
| 100 | $0.55 | $55.00 |
| 500 | $0.46 | $230.00 |
| 1,000 | $0.42 | $420.00 |
| 2,500 | $0.38 | $950.00 |
IRFR5305TRLPBF 概要
A P-channel MOSFET is a type of field-effect transistor in which the channel conductivity is controlled by a negative gate-source voltage. P-channel MOSFETs sit in the broader taxonomy: MOSFET -> FET -> transistor -> discrete semiconductor. Because P-channel devices source current when their gate is pulled toward ground, they simplify high-side switching circuits by eliminating the gate-driver charge pump that N-channel high-side switches require, making them favored for load switches, reverse-battery protection, and power-ORing.
Key features of the IRFR5305TRLPBF include a -55V drain-source breakdown, 65 mΩ maximum on-resistance, 110W power dissipation (Tc), fast switching speeds, fully avalanche-rated ruggedness, and an ultra-low on-resistance per silicon area achieved through advanced process technology. The P-channel polarity enables high-side switching without level-shifting circuitry, reducing BOM count in battery-powered and industrial systems.
Architecturally, the IRFR5305TRLPBF is built on Infineon's HEXFET fifth-generation planar process, which optimizes cell density to minimize RDS(on) while maintaining avalanche ruggedness and low gate charge. The DPAK (TO-252) package exposes the die tab for direct PCB heatsinking, providing low thermal resistance suitable for high-current switching applications.
Typical applications include high-side load switching, DC-DC converter synchronous rectifier high-side switches, reverse-polarity battery protection, motor drive half-bridges, and power-ORing circuits. The P-channel topology simplifies gate drive when the load is grounded, which is the canonical configuration for automotive and industrial 12V/24V/48V systems.
When designing with this device, calculate conduction loss as I² × RDS(on) and switching loss as ½ × VDS × ID × (tr + tf) × fsw. The TO-252 thermal pad must be soldered to a sufficient copper pour (typically ≥1 in² on FR4) to keep junction temperature below the 175°C maximum rating. Verify avalanche energy (EAS) for any unclamped inductive switching events.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
ドロップイン代替品: IRFR5305TRLPBF — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IRFR5305TRLPBF （同一形状・フットプリント） — 相違点: Technology, Package, Total Gate Charge (Qg), Lead-Free / RoHS, Drain-Source Voltage (VDS).
クイック比較ツール — 並列比較する代替部品を選択:
IRFR5305TRPBF
✅ ドロップイン✓ 在庫あり
$0.32 / 個
データシートを見る →IRFR5305TRRPBF
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
IRFR5410TRPBF
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$0.71 / 個
データシートを見る →IRFR5410TRRPBF
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$0.49 / 個
データシートを見る →IRFL014NTRPBF
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$0.3 / 個
データシートを見る →IRFR5305TRLPBF 最大定格＆電気的特性
| Polarity / Channel Type | P-Channel |
| Drain-Source Voltage (VDS) | -55 V |
| Continuous Drain Current (ID) at Tc=25C | -31 A |
| Gate-Source Voltage (VGS) max | ±20 V |
| RDS(on) max at VGS=-10V | 65 mΩ |
| Power Dissipation (PD) at Tc=25C | 110 W |
| 動作接合温度 | -55C to +175C |
| パッケージ | TO-252AA (DPAK), surface mount |
| 実装タイプ | Surface Mount |
| Technology | HEXFET fifth-generation planar MOSFET |
| Avalanche Rated | Yes (fully avalanche rated) |
| Lead-Free / RoHS | Yes (Pb-free, suffix "PBF") |
| Tape & Reel Orientation | Left orientation (TRLPBF = Tape & Reel, Left) |
IRFR5305TRLPBF ピン構成
| ピン 1 | Gate — Gate control input; pull low to turn on P-channel MOSFET |
| ピン 2 | Drain — Drain output (electrically tied to metal tab) |
| ピン 3 | Source — Source input (connected to load positive rail) |
| ピン Tab | Drain / Thermal Pad — Metal tab is electrically tied to Drain; primary thermal dissipation path |
主な用途
IRFR5305TRLPBF の用途: 6 件s: High-Side Load Switch (12V/24V Systems), Reverse-Polarity Battery Protection, Synchronous Rectifier / DC-DC High-Side Switch, Power ORing / Redundant Supply Switch, Motor Drive Half-Bridge (Low-Power), Hot-Swap / Inrush Current Limiter.
High-Side Load Switch (12V/24V Systems)
The IRFR5305TRLPBF is well-suited for high-side load switching in 12V and 24V automotive and industrial systems. Its P-channel topology eliminates the gate-driver charge pump required by N-channel high-side switches, simplifying PCB design: pull the gate low to turn on the load, pull high (or float via a pull-up) to turn it off. The -55V VDS rating handles 24V buses plus inductive transients, and 31A continuous current drives lamps, solenoids, and small motors comfortably. Place a 100kΩ pull-up on the gate for default-off behavior and add a TVS across drain-source for inductive kick protection.
おすすめ
Reverse-Polarity Battery Protection
The IRFR5305TRLPBF functions as the main blocking element in reverse-polarity protection circuits for 12V-24V battery-powered equipment. With its P-channel source tied to the battery positive and drain to the system load, forward conduction occurs naturally when VGS = 0, but a gate pull-up keeps the MOSFET off until a controller validates input polarity. The 65 mΩ RDS(on) yields only ~190 mV drop at 3A load, well within USB-PD and industrial tolerance. For full reverse-polarity protection up to 24V, the -55V VDS provides 2× safety margin over nominal rail voltage.
おすすめ
Synchronous Rectifier / DC-DC High-Side Switch
The IRFR5305TRLPBF can serve as the high-side switch in low-power synchronous buck converters and buck-boost topologies where P-channel drive simplifies the controller. The fifth-generation HEXFET process provides fast switching (low Qgd/Qgs ratio), minimizing dead-time losses in 100-500 kHz switching designs. The 65 mΩ RDS(on) and 31A current rating support converters up to 50W output at 12V input. Note that the P-channel high-side position requires the controller to swing the gate between VIN and ground - verify controller compatibility before substituting for an N-channel design.
おすすめ
Power ORing / Redundant Supply Switch
In redundant power-supply ORing circuits, the IRFR5305TRLPBF isolates two sources feeding a common load, preventing back-feeding and circulating currents. Its P-channel structure allows each supply's positive rail to feed through source-to-drain when active. RDS(on) of 65 mΩ is acceptable for ORing currents up to ~5A; above that, dissipation becomes significant and a lower-RDS(on) part is preferred. The fast body-diode reverse recovery suits switching between supplies at moderate frequencies.
おすすめ
Motor Drive Half-Bridge (Low-Power)
The IRFR5305TRLPBF can function as the high-side switch in a low-power brushed DC motor half-bridge, paired with an N-channel MOSFET on the low side. Its 31A pulsed rating handles motor inrush currents, and the -55V VDS accommodates 24V motor supplies with inductive kick margin. For H-bridge bidirectional motor control, two P-channel high-side and two N-channel low-side devices form the canonical topology. Add external flyback diodes or use the MOSFET's intrinsic body diode for small motors under 5A.
おすすめ
Hot-Swap / Inrush Current Limiter
In hot-swap and soft-start circuits, the IRFR5305TRLPBF serves as the series pass element that ramps up slowly to limit inrush into large bulk capacitors. A gate-driver circuit (often a constant-current source or PWM controller) slews the gate from VIN down to ~5V above source over milliseconds, controlling the dV/dt seen by the load. The 65 mΩ RDS(on) limits steady-state dissipation to acceptable levels at moderate load currents. The -55V VDS provides ample margin for 24V telecom and industrial rails.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IRFR5305TRLPBF — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IRFR5305TRPBF | IRFR5410TRPBF | IRFR5410TRRPBF | IRFL014NTRPBF |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | N-Channel |
| VDS max | -55 V | -55 V | -100 V | -100 V | -55 V |
| Continuous Drain Current (Tc=25C) | -31 A | -31 A | -13 A | -13 A | -2.4 A |
| RDS(on) max at VGS=±10V | 65 mΩ | 65 mΩ | 205 mΩ | 205 mΩ | 200 mΩ |
| Power Dissipation (Tc=25C) | 110 W | 110 W | 66 W | 66 W | 2.1 W |
| Technology | HEXFET Gen 5 (P-channel) | HEXFET Gen 5 (P-channel) | HEXFET (P-channel) | HEXFET (P-channel) | HEXFET (N-channel) |
| Reel Orientation | Left (TRLPBF) | Right (TRPBF) | Right (TRPBF) | Right (TRRRPBF, 13") | Right (TRPBF) |
主な差別化要因
- Ultra-low on-resistance per silicon area （vs IRFR5410TRPBF)
- P-channel polarity eliminates gate-drive charge pump （vs IRFL014NTRPBF (N-channel))
- Higher continuous current in same footprint （vs IRFR5410TRPBF)
設計ノート
Estimated: at continuous 10A load with 65 mΩ RDS(on), conduction loss is ~6.5W. With the DPAK thermal pad soldered to a 1 in² copper pour on standard 1 oz FR4 (θJA ≈ 50 C/W), junction temperature rises ~325C above ambient - far exceeding the 175C maximum. Practical mitigation: increase copper area to ≥3 in², attach a small clip-on heatsink, or reduce continuous current. For 31A operation, an active heatsink or fan cooling is mandatory.
Solder the DPAK metal tab directly to the PCB copper pour using the JEDEC TO-252 recommended land pattern with thermal vias (typically a 3×3 array of 0.3mm vias) connecting top copper to inner plane layers. The drain is electrically tied to the tab - ensure the copper pour does not short to adjacent low-voltage traces. Leave 0.5mm clearance between the tab pad and surrounding traces for standard 110V-rated PCB spacing.
Do not exceed VGS = ±20V; gate-source overvoltage is a common failure mode. When driven directly from a logic-level MCU (3.3V), the gate may not reach the full -10V enhancement needed for minimum RDS(on) - use a gate-driver or level-shifter. For reverse-polarity protection, add a Zener diode or TVS from gate to source to prevent VGS overvoltage during input transients above -20V.
Keep the high-current loop (Source → Load → Drain → Source return) as short as possible to minimize parasitic inductance. Place input/output capacitors and TVS diodes within 5mm of the MOSFET drain-source terminals. For switching applications above 100 kHz, use a star-ground topology to prevent the high di/dt from injecting noise into analog ground planes.
The intrinsic body diode of the P-channel MOSFET has a relatively slow reverse recovery, which can cause dead-time losses in synchronous rectification. For switching frequencies above 200 kHz, consider adding an external Schottky diode from source to drain to bypass the body diode, or use the IRF7309TRPBF which has an optimized body diode for bridge applications.
コンプライアンス情報
PBF suffix indicates lead-free / RoHS-compliant per Infineon datasheet. Commercial grade only; choose AUIRFR5305 for AEC-Q101 automotive qualification.
