ISC015N06NM5LF2ATMA1 - 60V 1.5mΩ OptiMOS 5 Linear FET | Infineon
部品番号: ISC015N06NM5LF2ATMA1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $3.85 | $3.85 |
| 10 | $3.46 | $34.60 |
| 100 | $3.08 | $308.00 |
| 500 | $2.77 | $1,385.00 |
| 1,000 | $2.46 | $2,460.00 |
| 5,000 | $2.21 | $11,050.00 |
ISC015N06NM5LF2ATMA1 概要
A Linear FET is a power MOSFET specifically characterized to operate safely in its linear (ohmic) region for sustained durations rather than only as a fully enhanced switch. Within the broader power-semiconductor hierarchy, Linear FETs sit under power MOSFETs, which in turn belong to the discrete semiconductor family used for switching and power conversion in modern electronics. The Infineon OptiMOS 5 Linear FET 2 family is positioned above standard trench MOSFETs because of its relaxed transfer characteristic, which limits peak MOSFET transconductance and thus keeps power dissipation bounded during inrush events.
Key features include ±20 V VGS rating with 3 V minimum gate-threshold, 1.3 nC Qrr (reverse-recovery charge) optimized for low-loss switching, and a monolithic integrated Schottky-like body diode. The wide SOA typically permits several amps of continuous linear-mode current at voltages well above the safe DC ratings of similarly Rds(on)-rated standard MOSFETs, which is critical for hot-swap controllers that must pass inrush current while limiting backplane voltage droop.
The part uses Infineon's latest OptiMOS 5 trench technology, which combines a low figure-of-merit (RDS(on) × Qg) with deliberately widened cell pitch to share current uniformly across the die. This engineering trade-off sacrifices some raw on-state resistance versus ultra-low-Rds(on) switching MOSFETs but delivers linear-region ruggedness that is otherwise unobtainable.
Typical applications include server hot-swap and OR-ing, 48 V telecom e-fuses, battery management system (BMS) charge/discharge FETs, USB-PD sink protection, and industrial PoE loads. The PG-TDSON-8 FL exposed-flap leadless package provides a low thermal resistance path from die to PCB copper, enabling compact 60 V hot-swap designs without external heatsinking at moderate loads.
When designing with this part, observe Infineon's SOA curves in the datasheet to size inrush current and duration; the linear-mode current capability decays rapidly with VDS, so engineers should pick a FET with margin between the application's worst-case operating point and the SOA boundary. Always use a gate-source pull-down resistor to guarantee defined off-state behavior during fault conditions.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the Infineon datasheet. The ISC015N06NM5LF2ATMA1 belongs to the wider ISCxxxN06 family of Linear FET 2 parts from Infineon, which differ in on-resistance and current ratings within the same PG-TDSON-8 FL footprint.
ドロップイン代替品: ISC015N06NM5LF2ATMA1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: ISC015N06NM5LF2ATMA1 （同一形状・フットプリント） — 相違点: Package, Technology, Operating Temperature Range, Product Family, Drain-Source Voltage (VDS).
クイック比較ツール — 並列比較する代替部品を選択:
ISC017N06NM5LF2ATMA1
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
IPT008N06NM5LFATMA1
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$5.4 / 個
データシートを見る →ISC015N06NM5LF2-VB
✅ ドロップイン📋 参考代替品（カタログ未掲載）
ISC017N06NM5LF2ATMA1
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
IPT015N10NF2SATMA1
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$3.1 / 個
データシートを見る →ISC015N06NM5LF2ATMA1 最大定格＆電気的特性
| Technology | OptiMOS 5 Linear FET 2 (N-Channel) |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at Ta | 32 A |
| Pulsed Drain Current (IDM) at Tc | 275 A |
| Power Dissipation (PD) at Ta | 3 W |
| Power Dissipation (PD) at Tc | 217 W |
| On-Resistance RDS(on) max at VGS=10V | 1.55 mΩ |
| On-Resistance RDS(on) at VGS=10V (typ) | 1.3 mΩ |
| Gate Threshold Voltage (VGS(th)) | 3 V |
| Gate-Source Voltage Rating | ±20 V |
| Reverse Recovery Charge (Qrr) | 1.3 nC |
| Input Capacitance (Ciss) | 6.9 nF |
| Output Capacitance (Coss) | 1.3 nF |
| Reverse Transfer Capacitance (Crss) | 55 pF |
| Total Gate Charge (Qg) | 90 nC |
| 動作接合温度 | -55 °C to +175 °C |
| パッケージ | PG-TDSON-8 FL (5x6 mm) |
| 実装タイプ | Surface Mount |
| RoHS | Compliant |
ISC015N06NM5LF2ATMA1 ピン構成
| ピン 1 | Gate — MOSFET gate input |
| ピン 2 | Source — Source connection (tied to pin 3 and pin 4) |
| ピン 3 | Source — Source connection |
| ピン 4 | Source — Source connection |
| ピン 5 | Drain — Drain connection (tied to exposed flap) |
| ピン 6 | Drain — Drain connection |
| ピン 7 | Drain — Drain connection |
| ピン 8 | Source Sense — Kelvin source sense for gate drive return |
安全動作領域 (DC)
主な用途
ISC015N06NM5LF2ATMA1 の用途: 7 件s: Server 48 V Hot-Swap and OR-ing, Telecom 48 V e-Fuse Protection, Battery Management System (BMS) Charge/Discharge FET, USB-PD Sink Protection Switch, Industrial Motor Drive Half-Bridge (Low-Side), Solar Charge Controller Load Switch, Automotive 12 V/24 V Load Switching.
Server 48 V Hot-Swap and OR-ing
The ISC015N06NM5LF2ATMA1's wide linear-mode SOA makes it ideal for 48 V server backplane hot-swap and OR-ing functions. During board insertion, the FET absorbs inrush current that charges bulk output capacitors - typically tens of amps for 10-100 ms. The part's 1.55 mΩ RDS(on) at 10 V VGS keeps conduction losses to roughly 1.5 W at 32 A continuous load, while the 60 V VDS rating provides 12 V margin above the 48 V nominal rail. Combined with the 5x6 mm PG-TDSON-8 FL footprint, it enables compact, single-FET-per-rail designs without paralleling.
おすすめ
Telecom 48 V e-Fuse Protection
In 48 V telecom and PoE+ systems, the ISC015N06NM5LF2ATMA1 serves as the linear-mode pass element of an e-fuse that protects downstream DC-DC converters from short circuits. The device's 217 W power dissipation at Tc and ±20 V VGS rating handle repetitive fault events of tens of amps for milliseconds - a regime that would destroy standard 60 V logic-level MOSFETs. Its 1.3 nC Qrr minimizes switching losses during fault-current interruption, while the PG-TDSON-8 FL exposed-flap leadless package delivers thermal resistance suitable for 30+ A continuous pass-through current.
おすすめ
Battery Management System (BMS) Charge/Discharge FET
The ISC015N06NM5LF2ATMA1 is well suited as a charge/discharge FET in 12 V/24 V lithium-ion battery management systems where its linear-mode capability lets it absorb back-EMF transients during relay switching. With 60 V VDS, the part handles 12 V lead-acid and 24 V LiFePO4 packs with ample transient margin. Its 32 A continuous current at Ta supports typical 1-2 kW battery packs, and the PG-TDSON-8 FL footprint enables compact cell-monitoring PCBs. The 1.55 mΩ on-resistance keeps conduction losses under 50 mW at 10 A discharge current.
おすすめ
USB-PD Sink Protection Switch
USB Power Delivery sink designs benefit from the ISC015N06NM5LF2ATMA1's wide SOA when protecting downstream loads from over-current and over-voltage events on the VBUS rail. The 60 V VDS rating exceeds USB-PD 3.1 EPR's 28 V / 36 V / 48 V fixed PDOs with adequate transient margin. During inrush (when a sink's bulk capacitors charge), the FET's linear-mode operation sustains peak currents of 5-10 A for tens of milliseconds without tripping thermal protection. Its low 1.3 nC Qrr minimizes switching losses and EMI during fast PD role-swap events.
おすすめ
Industrial Motor Drive Half-Bridge (Low-Side)
In low-voltage industrial motor drives (24-48 V brushless DC), the ISC015N06NM5LF2ATMA1 functions as a low-side switch with safe avalanche behavior during inductive freewheeling. The 217 W power dissipation at Tc supports pulse currents during motor start-up, while 60 V VDS gives 12 V margin on 48 V bus rails. Its 1.55 mΩ RDS(on) at 10 V VGS reduces conduction loss in PWM-switched half-bridge configurations. The PG-TDSON-8 FL package handles the 175 °C maximum junction temperature needed for sealed motor-drive enclosures.
おすすめ
Solar Charge Controller Load Switch
The ISC015N06NM5LF2ATMA1 is appropriate as a load disconnect switch in MPPT solar charge controllers where its 60 V VDS handles 24 V battery panels with surge margin. The linear-mode SOA allows the FET to absorb reverse-current transients from inductive loads when disconnect occurs at high solar irradiance. With 32 A continuous current at Ta, a single FET can switch 1 kW of solar panel power, and the PG-TDSON-8 FL package dissipates ~3 W at Ta without external heatsinking in well-ventilated enclosures. Its 90 nC Qg keeps gate-driver losses low at typical 25 kHz switching frequencies.
おすすめ
Automotive 12 V/24 V Load Switching
The ISC015N06NM5LF2ATMA1's wide operating temperature range (-55 °C to +175 °C junction) makes it suitable for automotive 12 V/24 V body and chassis load switching. Its 60 V VDS withstands load-dump transients of 40 V typical, and the 1.55 mΩ RDS(on) at 10 V VGS delivers efficient power distribution to high-current loads like seat heaters and radiator fans. While not AEC-Q100 qualified itself, this OptiMOS 5 Linear FET 2 is widely used in non-safety automotive subsystems. The PG-TDSON-8 FL footprint enables compact under-hood and cabin-mounted electronic control units.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: ISC015N06NM5LF2ATMA1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | ISC017N06NM5LF2ATMA1 | IPT008N06NM5LFATMA1 | ISC015N06NM5LF2-VB | IPT015N10NF2SATMA1 |
|---|---|---|---|---|---|
| Package | PG-TDSON-8 FL (5x6 mm) | PG-TDSON-8 FL (5x6 mm) - same | PG-TDSON-8 FL (5x6 mm) - same | DFN8 (5x6 mm) - same footprint | PG-TDSON-8 FL - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | VBsemi | Infineon Technologies |
| VDS Rating | 60 V | 60 V | 60 V | 60 V | 100 V |
| RDS(on) max @ 10V | 1.55 mΩ | 1.75 mΩ | 0.8 mΩ | 1.3 mΩ (typ) | 1.5 mΩ |
| Continuous ID at Ta | 32 A | 28 A | 30 A | 200 A | 180 A (Tc) |
| Technology Family | OptiMOS 5 Linear FET 2 | OptiMOS 5 Linear FET 2 | OptiMOS 5 Linear FET | SGT | OptiMOS 5 |
| Linear-Mode SOA | Wide (Linear FET optimized) | Wide (Linear FET optimized) | Reduced (Standard switching) | Standard | Standard |
主な差別化要因
- Engineered linear-mode Safe Operating Area （vs IPT008N06NM5LFATMA1)
- Lowest RDS(on) in same PG-TDSON-8 FL footprint （vs ISC017N06NM5LF2ATMA1)
- Proven Infineon automotive supply chain （vs ISC015N06NM5LF2-VB (VBsemi))
- Lower Qrr for reduced switching loss （vs BSC097N06NSATMA1 (standard OptiMOS 5))
設計ノート
Estimated: At VDS = 30 V (in the linear region) and ID = 5 A during a hot-swap inrush event, the device dissipates P = VDS × ID = 150 W. The PG-TDSON-8 FL package has theta_JC ≈ 0.7 °C/W, so the die temperature rises by 105 °C above the case - placing junction temperature near the 175 °C maximum if the case is already at 70 °C. Engineers must keep linear-mode operating points well inside the datasheet SOA curve; consider the ISC017N06NM5LF2ATMA1 for higher inrush or reduce inrush duration with a larger gate RC.
The PG-TDSON-8 FL exposed flap must be soldered to the PCB drain copper pour for thermal and electrical performance. Use at least 1 oz copper on top and bottom layers, stitched with thermal vias (0.3 mm pitch, 12+ vias) under the flap. The Source Sense pin (pin 8) provides a Kelvin connection for the gate driver - route the gate-drive return path directly to pin 8 rather than the main source pads to avoid dv/dt-induced turn-on.
Do not use the ISC015N06NM5LF2ATMA1 in continuous DC linear operation at full rated current - the linear-mode SOA derates rapidly with VDS. Always include a gate-source pull-down resistor (10-100 kΩ) to keep the FET off during controller power-up, and add a TVS diode from gate to source to clamp below ±20 V during drain-voltage transients. For repetitive pulsed operation, consult the datasheet's pulsed SOA curves rather than the DC curve.
Keep the gate-drive loop area minimal: place the gate resistor and gate-source pull-down within 5 mm of pins 1 and 8. Route the high-current drain-source loop directly under the FET using wide copper pours (≥ 4 mm wide on outer layers, ≥ 8 mm wide with internal planes). For 48 V hot-swap, add an RC snubber (10 Ω + 1 nF) from drain to source within 10 mm of the FET to damp VDS ringing during turn-off.
The 6.9 nF Ciss and 90 nC Qg of the ISC015N06NM5LF2ATMA1 require a gate driver capable of sourcing/sinking at least 1 A peak for sub-microsecond switching transitions. A standard CMOS gate driver like the IRS2104STRPBF is adequate; for higher switching speeds, a UCC27531-class 4 A driver reduces switching losses. Add a small ferrite bead or 10 Ω gate resistor to control dv/dt-related ringing in 48 V applications.
コンプライアンス情報
RoHS compliant per Infineon product page. Not AEC-Q100 qualified for automotive safety applications - select automotive-grade Infineon parts if required. Halogen-free status not stated in available data.
