MRF18030BLSR3 - 30W 1930-1990 MHz RF Power MOSFET LDMOS | NXP
部品番号: MRF18030BLSR3 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $78.5 | $78.50 |
| 10 | $72.4 | $724.00 |
| 100 | $65.9 | $6,590.00 |
| 500 | $58.2 | $29,100.00 |
| 1,000 | $52.1 | $52,100.00 |
MRF18030BLSR3 概要
Key features include 30 W CW (or pulsed) output power capability at 1.93-1.99 GHz, 14 dB power gain at the design center frequency, 26 V drain supply operation, and an N-channel enhancement-mode gate that simplifies bias sequencing. The NI-400S ceramic package provides a low thermal resistance path from the die to the PCB or external heatsink, supporting 83.3 W absolute maximum power dissipation. The device is specified for GSM and GSM-EDGE waveforms and is suitable for FM, TDMA, CDMA, and multi-carrier amplifier applications where linearity and ruggedness are required.
The MRF18030BLSR3 uses an enhancement-mode lateral MOSFET structure that requires a positive gate threshold (typically 2-3 V) and operates in Class AB for linear amplification or Class C for high-efficiency CW applications. Internal matching networks reduce external component count, and the high drain efficiency minimizes heat-sinking requirements in properly laid-out boards. The device is designed to withstand the high VSWR conditions typical of cellular base-station antennas.
Typical applications include GSM and GSM-EDGE base-station final-stage power amplifiers, W-CDMA TV-spectrum amplification, multi-carrier amplifier modules, and infrastructure-grade RF power blocks operating in the 1930-1990 MHz TV band (DCS/PCS). It is also used in digital broadcasting transmitters and industrial RF heating systems where its 30 W class power level and frequency coverage are suitable.
When designing with this device, careful attention must be paid to PCB thermal management; the NI-400S package requires a properly dimensioned copper footprint and, in many cases, an external heatsink to keep junction temperature within safe operating limits at full CW output power. Designers should also provide sufficient drain-supply decoupling and follow NXP's reference design for input/output matching network values to achieve the published 14 dB gain and efficiency figures.
ドロップイン代替品: MRF18030BLSR3 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: MRF18030BLSR3 （同一形状・フットプリント） — 相違点: Configuration, Drain-Source Voltage (VDSS), Manufacturer, Output Power (Pout), Transistor Type.
クイック比較ツール — 並列比較する代替部品を選択:
MRF18030BLR3
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MRF18030BSR3
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MRF18060BLSR3
✅ ドロップイン✓ 在庫あり
$27.85 / 個
データシートを見る →MRF18090BLSR3
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MRF18030BLSR3 最大定格＆電気的特性
| Manufacturer | Analog Devices / NXP Semiconductors (formerly Freescale) |
| Part Number | MRF18030BLSR3 |
| トランジスタタイプ | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Technology | LDMOS, laterally diffused metal-oxide-semiconductor |
| Configuration | Single, common-source RF power transistor |
| Operating Frequency Range | 1.8 GHz to 2 GHz (specified 1930-1990 MHz) |
| Target Application Band | GSM / GSM-EDGE / DCS-1900 / PCS-1900 |
| Drain-Source Voltage (VDSS) | 26 V typical operating |
| Output Power (Pout) | 30 W (CW or pulsed, in-band) |
| Power Gain | 14 dB typical at 2 GHz |
| Maximum Power Dissipation (Abs) | 83.3 W |
| Operating Mode | Enhancement Mode |
| Drain Current (Id) at test condition | 250 mA (quiescent / small-signal reference) |
| パッケージ | NI-400S (CASE 465E-04, Style 1), ceramic surface mount |
| 実装タイプ | Surface Mount |
| Lead-Free / RoHS | Per NXP product page (verify with current data) |
MRF18030BLSR3 ピン構成
| ピン 1 | Drain — RF output / drain DC supply |
| ピン 2 | Gate — RF input / gate bias |
| ピン 3 | Source — Source contact on package body (flange bottom) |
DC 安全動作領域
主な用途
MRF18030BLSR3 の用途: 6 件s: GSM / EDGE Base-Station Final-Stage Power Amplifier, W-CDMA / 3G Node-B Power Amplifier Module, Multi-Carrier Power Amplifier (MCPA) Module, Industrial RF Heating / Drying Transmitter, Digital Broadcasting / Microwave Link Driver, RF Power Amplifier Reference Design / Evaluation Platform.
GSM / EDGE Base-Station Final-Stage Power Amplifier
The MRF18030BLSR3 is the canonical NXP choice for the final stage of 1930-1990 MHz GSM and GSM-EDGE macro-cell base-station power amplifiers, where its 30 W saturated output and 14 dB power gain deliver the RF drive level required to feed a combiner or antenna at full power. Its 26 V drain operation is the standard telecom rail, simplifying power-supply design and matching existing infrastructure. Per the NXP datasheet, the device is internally matched for the 1930-1990 MHz band, reducing external matching component count on the PCB and accelerating time-to-market for cellular amplifier modules. Compared with bipolar alternatives, LDMOS provides superior gain linearity and ruggedness against load VSWR events typical of antenna-mast installations.
おすすめ
W-CDMA / 3G Node-B Power Amplifier Module
Although primarily marketed for GSM/EDGE, the MRF18030BLSR3 also serves in W-CDMA and 3G Node-B final-stage power amplifiers operating in the 1930-1990 MHz band, per the NXP datasheet's stated suitability for CDMA and multicarrier amplifier applications. Its 14 dB gain and 30 W saturated output deliver a comfortable drive margin for Doherty configurations, and its LDMOS enhancement-mode gate supports the bias sequencing required by W-CDMA linearity targets. Designers pair it with a digital pre-distortion (PD) controller to meet 3GPP ACLR requirements at the higher PAR of W-CDMA waveforms. The 26 V rail is compatible with existing Node-B power supplies, and the NI-400S SMT package supports automated assembly for high-volume deployments.
おすすめ
Multi-Carrier Power Amplifier (MCPA) Module
The MRF18030BLSR3 is well-suited for multi-carrier power amplifier (MCPA) modules combining multiple GSM, EDGE, or W-CDMA carriers into a single linear amplifier chain. The NXP datasheet explicitly lists multi-carrier amplifier applications as a target use case, leveraging the device's 14 dB gain, 30 W output, and robust thermal envelope in the NI-400S ceramic package. In an MCPA, several carriers at different frequencies are summed at the input and amplified together, demanding high linearity and intermodulation performance, which LDMOS provides inherently better than GaAs at this power level. The 26 V drain simplifies integration into existing 48 V-to-26 V telecom power architectures with standard buck converters.
おすすめ
Industrial RF Heating / Drying Transmitter
Industrial RF heating, drying, and plastic-welding transmitters operating at 1.8-2 GHz can leverage the MRF18030BLSR3's 30 W output and 26 V supply to drive microwave applicators and resonant cavities in non-communication applications. Its LDMOS ruggedness against high VSWR and load mismatch - common when dielectric loads vary in industrial processes - is a key advantage over GaAs devices. Per the NXP datasheet, the device is suitable for FM and general-purpose RF amplification, making it a flexible platform for industrial systems where 2 GHz ISM-band operation is permitted. Thermal management follows the same NI-400S heatsink guidelines as telecom applications.
Digital Broadcasting / Microwave Link Driver
The MRF18030BLSR3 functions as a driver or final-stage amplifier in 1.9 GHz digital microwave point-to-point links and digital broadcasting transmitters, where its 30 W output and 14 dB gain provide ample drive for medium-haul links. Per NXP datasheet, the device supports FM and digital modulation schemes including CDMA and multicarrier signals, which encompasses most modern digital broadcasting standards in the 2 GHz band. Pairing it with an external LNA and filter bank yields a complete transmitter chain for studio-to-transmitter links (STLs) or other fixed-service applications. The NI-400S SMT package supports compact PCB layouts suitable for indoor transmitter chassis.
RF Power Amplifier Reference Design / Evaluation Platform
Beyond end products, the MRF18030BLSR3 is widely used in amplifier reference designs and evaluation platforms that demonstrate Doherty, Class AB, and envelope-tracking topologies for the 1930-1990 MHz band. The 30 W power class is a sweet spot for academic and commercial research into linearization techniques such as digital pre-distortion (DPD), because it produces measurable but manageable thermal loads. NXP's application notes and reference designs typically use the BLSR3 variant (SMT) for PCB-based demos and the BLR3 variant (flange) for higher-duty laboratory evaluation. Engineers developing new base-station PAs can start from the NXP demo board layout and tune matching networks for their specific application.
おすすめ製品の概要
エンジニアリング参考データ: MRF18030BLSR3 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | MRF18030BLR3 | MRF18030BSR3 | MRF18060BLSR3 | MRF18090BLSR3 |
|---|---|---|---|---|---|
| Brand | NXP Semiconductors (formerly Freescale) | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-400S (CASE 465E-04, Style 1) SMT | NI-400 (CASE 465E-04) flange-mount | NI-400S (CASE 465E-04, Style 1) SMT | NI-400S (CASE 465E-04, Style 1) SMT | NI-400S (CASE 465E-04, Style 1) SMT |
| Frequency Range | 1930-1990 MHz | 1930-1990 MHz | 1805-1880 MHz | 1930-1990 MHz | 1930-1990 MHz |
| Output Power | 30 W | 30 W | 30 W | 60 W | 90 W |
| Drain Supply Voltage | 26 V | 26 V | 26 V | 26 V | 26 V |
| Transistor Type | N-Channel LDMOS | N-Channel LDMOS | N-Channel LDMOS | N-Channel LDMOS | N-Channel LDMOS |
主な差別化要因
- Genuine 30 W RF power in compact SMT ceramic carrier （vs MRF18030BSR3)
- Surface-mount NI-400S package enables automated assembly （vs MRF18030BLR3)
- Right-sized 30 W for typical macro-cell final stages （vs MRF18060BLSR3 / MRF18090BLSR3)
設計ノート
The NI-400S ceramic SMT package requires a properly designed PCB thermal land with multiple thermal vias to an internal/external copper spreader. At 30 W RF output and ~25-30 W dissipated heat under CW drive, junction temperature can approach or exceed 150 C without adequate cooling. For continuous-duty CW applications, attach an external aluminum heatsink with thermal compound; for pulsed GSM/EDGE, the PCB copper alone may suffice if the land area exceeds ~10 sq cm and 2 oz copper is used.
Use low-loss PCB substrate such as Rogers RO4350B or Rogers RO4003C for the 1930-1990 MHz matching networks; FR-4 is acceptable only for DC bias routing. Keep input and output traces 50-ohm microstrip or stripline, with isolation slots between gate and drain matching networks to prevent feedback oscillation. Place drain-bias decoupling capacitors (10 uF + 100 nF + 1 nF) within 2 mm of the drain lead to suppress VDS ripple that could degrade linearity in EDGE/W-CDMA modes.
Follow the NXP reference design layout from the LSTFP/MRF18030 demo board application note. Maintain the gate-bias trace as a narrow, well-bypassed line to avoid RF leakage into the bias supply, and use a quarter-wave stub or RF choke on the drain DC feed. The source contact must be solidly grounded through the package flange to multiple vias for lowest common-source inductance; insufficient source grounding is the most common cause of instability and reduced gain in LDMOS amplifiers.
Do not exceed the absolute maximum VDS of 65 V (per datasheet) under any transient condition, including load-mismatch reflections at the antenna. Do not drive the gate above its absolute maximum VGS rating or below the enhancement threshold (~2-3 V). At startup, sequence gate bias before drain bias to avoid uncontrolled current spikes. When measuring into a mismatched load, use an isolator or attenuator pad to protect the device from reflected power that could exceed its SOA limits.
コンプライアンス情報
RoHS and lead-free compliance per NXP product documentation. Halogen-free status not explicitly stated in available web data; verify with NXP material declaration. AEC-Q100 not applicable for RF power transistors - this is not an automotive-qualified part.
