MRF18060BLSR3 - 60W RF Power MOSFET 1930-1990 MHz | NXP
部品番号: MRF18060BLSR3 ⚠ ラストタイムバイ| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $48.5 | $48.50 |
| 10 | $43.65 | $436.50 |
| 100 | $38.75 | $3,875.00 |
| 500 | $32.4 | $16,200.00 |
| 1,000 | $27.85 | $27,850.00 |
MRF18060BLSR3 概要
A lateral N-channel RF power MOSFET is a special class of power transistor fabricated using a lateral metal-oxide-semiconductor process rather than the vertical DMOS or GaN processes common at higher frequencies. Lateral MOSFETs provide an excellent balance of high gain, broadband flatness, and ruggedness for VHF through low-L-band operation, making them a long-standing reference design choice for cellular base-station power amplifiers. The MRF18060BLSR3 belongs to the RF power transistor family that sits beneath RF power amplifier modules and ultimately beneath the wireless base-station hierarchy: RF power MOSFET -> RF power transistor -> power semiconductor -> discrete semiconductor.
Key features include 1930-1990 MHz operating range, 60 W CW output power at 26 V, 13 dB small-signal gain, and high efficiency suitable for GSM, TDMA, CDMA, and multi-carrier amplifier topologies. The NI-780S ceramic package offers stable thermal performance with a peak reflow temperature of 260 C and a maximum power dissipation rating of 180 W absolute, making it suitable for Class AB base-station PAs. The lateral MOSFET process provides inherent thermal stability and high breakdown voltage, while the broadband matching capability supports multi-carrier WLL applications.
This transistor is specified for use in Class AB amplifier configurations for PCN/PCS cellular radio and WLL (Wireless Local Loop) infrastructure. When designing with this device, observe NXP's recommended gate bias sequencing (VGS applied before VDD) to prevent device damage, and pay close attention to the NI-780S landing pattern for thermal management. The NI-780S ceramic body requires careful PCB layout and a controlled thermal path to maintain junction temperature within safe limits.
ドロップイン代替品: MRF18060BLSR3 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: MRF18060BLSR3 （同一形状・フットプリント） — 相違点: Configuration, Drain-Source Voltage (VDSS), Manufacturer, Output Power (Pout), Transistor Type.
クイック比較ツール — 並列比較する代替部品を選択:
MRF18060BLR3
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MRF18030BLSR3
✅ ドロップイン✓ 在庫あり
$52.1 / 個
データシートを見る →MRF18060BLSR3 最大定格＆電気的特性
| トランジスタタイプ | Lateral N-Channel Enhancement-Mode MOSFET |
| Manufacturer | NXP Semiconductors (formerly Freescale/Motorola) |
| Frequency Range | 1930 MHz to 1990 MHz (specified band), 1800-2000 MHz (operational) |
| Output Power (Pout) | 60 W CW |
| Drain-Source Voltage (VDSS) | 26 V |
| Test Voltage (VDD) | 26 V |
| Power Gain (Gps) | 13 dB (typical) |
| Maximum Power Dissipation (Absolute) | 180 W |
| パッケージ / ケース | NI-780S (CASE 465-06, Style 1), ceramic surface-mount |
| 実装タイプ | Surface Mount |
| Configuration | Single N-channel |
| Peak Reflow Temperature | 260 C |
MRF18060BLSR3 ni-780s (case 465-06, style 1), ceramic surface-mount ピン配置ガイド
MRF18060BLSR3 (ni-780s (case 465-06, style 1), ceramic surface-mount パッケージ) のピン配置。 このパワーデバイスは、ゲート、ドレイン、ソース端子を備えています。非極性パッケージの場合、正確なピン1の向きとフットプリントの詳細については、メーカーのデータシートを参照してください。主な用途には、電源設計、モータ駆動、負荷スイッチングがあります。
詳細なピン配置データはありません: MRF18060BLSR3.
詳細は データシート をご参照ください。
主な用途
MRF18060BLSR3 の用途: 6 件s: PCS/PCN Base Station Power Amplifier, WLL Wireless Local Loop Infrastructure, Multi-Carrier GSM Power Amplifier, TDMA Cellular Base Station Transmitter, CDMA Multi-Carrier Power Amplifier, Industrial RF Heating & Plasma Drive.
PCS/PCN Base Station Power Amplifier
The MRF18060BLSR3's 60 W CW output at 1930-1990 MHz with 13 dB gain is a near-perfect match for the final stage of PCS-1900 and PCN base-station power amplifiers. In a Class AB PA, a 3 W driver stage drives the MRF18060BLSR3 to 60 W CW with the lateral MOSFET's inherent thermal stability enabling multi-carrier GSM/EDGE and early UMTS deployments. Place the device on an NI-780S footprint with a copper-spreader heatsink adequate to dissipate 50-60 W of waste heat at 50% efficiency. Designed for cellular radio base-station infrastructure including GSM, TDMA, CDMA, and multi-carrier amplifier applications per NXP datasheet.
おすすめ
WLL Wireless Local Loop Infrastructure
The MRF18060BLSR3 covers the 1800-2000 MHz band broadly, making it well suited to WLL (Wireless Local Loop) customer-premises equipment and base-station transmitter chains. Its 60 W capability supports long-reach fixed-wireless links, and the lateral MOSFET's broadband match reduces the matching network bill of materials relative to narrower-band parts. The device is specified as suitable for Class AB WLL amplifier service per the manufacturer datasheet, accepting TDMA and CDMA modulation formats that WLL systems routinely employ.
おすすめ
Multi-Carrier GSM Power Amplifier
Multi-carrier GSM amplifiers require high linearity together with broadband thermal stability - exactly the regime where the MRF18060BLSR3's lateral N-channel MOSFET excels. Driven from a Class AB bias point at 26 V, the 13 dB gain and 60 W CW rating provide the headroom required to combine 2-4 GSM carriers while keeping the third-order intermodulation products inside the cellular mask. Use NXP's reference-design matching networks and bias sequencing (VGS applied before VDD) to avoid device damage. Operational suitability for multi-carrier amplifier applications is explicitly listed in the manufacturer datasheet.
おすすめ
TDMA Cellular Base Station Transmitter
The MRF18060BLSR3 is designed for TDMA cellular base-station transmitters operating across 1800-2000 MHz, with the lateral MOSFET's high breakdown voltage and ruggedness making it a reliable final-stage choice. At 26 V VDD and 60 W CW output, the device delivers the linear RF power required for 4-slot GSM bursts with sufficient margin. Apply negative gate bias sequencing during power-up per the NXP datasheet recommendation, and verify thermal mounting matches the NI-780S ceramic-body mechanical drawing. Specified in manufacturer datasheet as suitable for TDMA cellular radio amplifier applications.
おすすめ
CDMA Multi-Carrier Power Amplifier
CDMA multi-carrier amplifier applications require flat gain, good linearity, and high instantaneous bandwidth - characteristics natively delivered by the MRF18060BLSR3's lateral MOSFET architecture. At 26 V VDD the device produces 60 W with 13 dB gain across the 1930-1990 MHz band, supporting the parallel-carrier combining needed for 3G CDMA base-station deployment. Confirm drain-current and junction-temperature limits against NXP's datasheet before finalizing CDMA-specific bias points. Explicitly listed in the manufacturer datasheet as suitable for CDMA amplifier applications.
おすすめ
Industrial RF Heating & Plasma Drive
Beyond telecom infrastructure, the MRF18060BLSR3's 60 W CW rating and broadband match around 1.9 GHz can be re-purposed for industrial RF energy applications such as plasma generation, RF drying, or material heating where the 1.9 GHz ISM-adjacent band is usable. Lateral MOSFETs are well known for their ruggedness under mismatch, an asset when driving reactive loads typical of plasma chambers. Provide a robust circulator/isolator and adequate heatsinking so the absolute 180 W power-dissipation limit is never approached in industrial service. Although not explicitly named in the datasheet, the device's electrical characteristics support this re-purposing in industrial deployments.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: MRF18060BLSR3 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | MRF18060BLR3 | MRF18030BLSR3 |
|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-780S (CASE 465-06, Style 1) | NI-780 (CASE 465-06, Style 1) - bolt-down variant | NI-780S (CASE 465-06, Style 1) - same SMD |
| Output Power (CW) | 60 W | 60 W | 30 W |
| Drain Supply (VDD) | 26 V | 26 V | 26 V |
| Frequency Range | 1930-1990 MHz (1800-2000 MHz operational) | 1930-1990 MHz (1800-2000 MHz operational) | 1930-1990 MHz (1800-2000 MHz operational) |
| Power Gain | 13 dB | 13 dB | 13 dB |
| Mounting Type | Surface Mount | Bolt-down (through-hole equivalent) | Surface Mount |
| Maximum Power Dissipation | 180 W | 180 W | 180 W |
| Lifecycle Status | Last Time Buy | Last Time Buy | Last Time Buy (per NXP family) |
主な差別化要因
- High 13 dB power gain at 1.9 GHz （vs MRF18030BLSR3)
- Surface-mount NI-780S ceramic package （vs MRF18060BLR3)
- Lateral N-channel MOSFET technology （vs GaN HEMT alternatives (Qorvo QPD1004 family))
設計ノート
Estimated: at 50% drain efficiency and 60 W Pout, internal dissipation is roughly 60 W. With the NI-780S ceramic body and a 30 C/W thermal interface to a copper spreader, junction rise above ambient is about 1800 C, which exceeds silicon limits - this is a worst-case pointer showing that a low-C/W bolted heatsink (<2 C/W) is mandatory for CW operation. Always validate thermal design against the absolute 180 W dissipation rating in the manufacturer datasheet.
Use NXP's reference PCB layout for the NI-780S: gate and source traces should be 50 ohm controlled-impedance and physically short, with the ceramic body sitting on a copper pad large enough to spread heat across multiple thermal vias. Apply gate-bias sequencing (VGS applied before VDD) at power-up, and add a drain-voltage clamp per the datasheet to protect against load-pull transients common in base-station service.
Do not operate the MRF18060BLSR3 at VDD above 26 V without re-derating - the absolute max drain voltage is set by the lateral MOSFET process and exceeding it risks immediate device failure. Avoid driving into a high-VSWR load without an external circulator/isolator: lateral MOSFETs are rugged but a sustained open-circuit load can still exceed SOA. Confirm Reflow profile stays below 260 C peak per the package rating, especially when sourcing from last-time-buy inventory where reels may have aged.
コンプライアンス情報
NI-780S package supports 260 C peak reflow (consistent with lead-free assembly), but explicit RoHS and REACH compliance statements were not present in the verified web data as of 2026-10-16 and should be confirmed with NXP before production release.
