MRF18030BLSR3 vs MRF18060BLSR3 比較
詳細な並列比較: MRF18030BLSR3 メーカー: NXP Semiconductors および MRF18060BLSR3 メーカー: NXP Semiconductors。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
NXP Semiconductors
MRF18030BLSR3 - 30W 1930-1990 MHz RF Power MOSFET LDMOS | NXP
MRF18030BLSR3 ✓ 生産中仕様比較
| パラメータ | MRF18030BLSR3 | MRF18060BLSR3 |
|---|---|---|
| ブランド | NXP Semiconductors | NXP Semiconductors |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | ラストバイ |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $52.10 | $27.85 |
| Manufacturer | Analog Devices / NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale/Motorola) |
| Part Number | MRF18030BLSR3 | — |
| トランジスタタイプ | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) | Lateral N-Channel Enhancement-Mode MOSFET |
| Technology | LDMOS, laterally diffused metal-oxide-semiconductor | — |
| Configuration | Single, common-source RF power transistor | Single N-channel |
| Operating Frequency Range | 1.8 GHz to 2 GHz (specified 1930-1990 MHz) | — |
| Target Application Band | GSM / GSM-EDGE / DCS-1900 / PCS-1900 | — |
| Drain-Source Voltage (VDSS) | 26 V typical operating | 26 V |
| Output Power (Pout) | 30 W (CW or pulsed, in-band) | 60 W CW |
| Power Gain | 14 dB typical at 2 GHz | — |
| Drain Efficiency | [DATA_NEEDED: typical drain efficiency %] | [DATA_NEEDED: drain efficiency percentage] |
| Maximum Power Dissipation (Abs) | 83.3 W | — |
| Operating Mode | Enhancement Mode | — |
| Drain Current (Id) at test condition | 250 mA (quiescent / small-signal reference) | — |
| パッケージ | NI-400S (CASE 465E-04, Style 1), ceramic surface mount | — |
| 実装タイプ | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Per NXP product page (verify with current data) | — |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| 動作接合温度 | [DATA_NEEDED: max junction temperature C] | — |
| Frequency Range | — | 1930 MHz to 1990 MHz (specified band), 1800-2000 MHz (operational) |
| Test Voltage (VDD) | — | 26 V |
| Power Gain (Gps) | — | 13 dB (typical) |
| Maximum Power Dissipation (Absolute) | — | 180 W |
| Maximum Drain Current | — | [DATA_NEEDED: maximum DC drain current] |
| 動作温度範囲 | — | [DATA_NEEDED: operating temperature range] |
| Storage Temperature Range | — | [DATA_NEEDED: storage temperature range] |
| パッケージ / ケース | — | NI-780S (CASE 465-06, Style 1), ceramic surface-mount |
| Peak Reflow Temperature | — | 260 C |
| MSLレベル | — | [DATA_NEEDED: MSL rating] |
| RoHS ステータス | — | [DATA_NEEDED: RoHS compliance] |