STI38N65M5 - 650V 38A N-Channel Power MOSFET | STMicroelectronics
部品番号: STI38N65M5 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $3.42 | $3.42 |
| 10 | $3.08 | $30.80 |
| 100 | $2.74 | $274.00 |
| 500 | $2.46 | $1,230.00 |
| 1,000 | $2.19 | $2,190.00 |
STI38N65M5 概要
A Power MOSFET is a type of field-effect transistor optimized for switching and amplification in power electronics. It operates by controlling the conductivity between the drain and source terminals through an insulated gate, allowing efficient switching at high voltages and currents. Power MOSFETs are fundamental components in power management systems, serving as switches in DC-DC converters, AC-DC power supplies, and motor drives. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs.
Key features of the STI38N65M5 include a low on-resistance (RDS(on)) of typically 0.099 ohm, which minimizes conduction losses and improves overall efficiency. The device also offers a fast switching performance with a total gate charge (Qg) of 110 nC, enabling high-frequency operation. The MDmesh M5 technology reduces the figure of merit (RDS(on) x Qg), making it an excellent choice for applications where efficiency and thermal management are critical.
Technically, the STI38N65M5 utilizes a vertical DMOS structure with a striped layout, which enhances current handling and reduces on-resistance. The device is avalanche-rated, with an avalanche energy (EAS) of 1.2 J, ensuring robustness in inductive load switching. The TO-247 package offers a low thermal resistance of 0.5°C/W (junction-to-case), allowing efficient heat dissipation when mounted on a suitable heatsink.
Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, solar inverters, and motor drives. In these applications, the STI38N65M5 provides high efficiency and reliability, reducing system size and cooling requirements. Its 650V rating makes it suitable for universal input (85-265V AC) power supplies, where it can handle the high voltage transients.
When designing with this device, ensure proper gate drive voltage (typically 10V) to fully enhance the channel and minimize on-resistance. Also, consider the gate-source voltage rating (VGS) of ±30V and implement appropriate gate protection if necessary. The device is RoHS compliant and halogen-free, meeting modern environmental standards.
ドロップイン代替品: STI38N65M5 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: STI38N65M5 （同一形状・フットプリント） — 相違点: Package, RoHS Status.
クイック比較ツール — 並列比較する代替部品を選択:
STW38N65M5
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
STI38N65M5-1
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
IPW65R041CFD
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$4.68 / 個
データシートを見る →FCH38N65
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
TK38N65W5
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
STI38N65M5 最大定格＆電気的特性
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 650 V |
| Continuous Drain Current (ID) at 25°C | 38 A |
| Continuous Drain Current (ID) at 100°C | 24 A |
| Pulsed Drain Current (IDM) | 152 A |
| Gate-Source Voltage (VGS) | ±30 V |
| On-Resistance (RDS(on)) | 0.099 ohm (typical) |
| Total Gate Charge (Qg) | 110 nC |
| Input Capacitance (Ciss) | 4200 pF |
| Output Capacitance (Coss) | 180 pF |
| Reverse Transfer Capacitance (Crss) | 12 pF |
| Avalanche Energy (EAS) | 1.2 J |
| 動作温度範囲 | -55°C to +150°C |
| パッケージ | TO-247 |
| 実装タイプ | Through Hole |
| RoHS ステータス | Compliant |
| ハロゲンフリー | Yes |
STI38N65M5 ピン構成
| ピン 1 | Gate — Gate terminal for controlling the MOSFET |
| ピン 2 | Drain — Drain terminal, connected to the load |
| ピン 3 | Source — Source terminal, connected to ground |
安全動作領域
主な用途
STI38N65M5 の用途: 6 件s: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), Solar Inverters, Motor Drives, Uninterruptible Power Supplies (UPS), Welding Equipment.
Switch-Mode Power Supplies (SMPS)
The STI38N65M5 is ideal for SMPS due to its high voltage rating (650V) and low on-resistance (0.099 ohm), which reduce conduction losses and improve efficiency. In a typical flyback or forward converter, the MOSFET switches at high frequency, and its fast switching characteristics (Qg=110nC) minimize switching losses. The TO-247 package allows efficient heat dissipation, enabling reliable operation in power supplies up to several kilowatts. Compared to IGBTs, the MOSFET offers faster switching and lower losses at moderate frequencies, making it a preferred choice for SMPS designs.
おすすめ
Power Factor Correction (PFC)
In PFC circuits, the STI38N65M5 operates as a boost switch, shaping the input current to be sinusoidal and in phase with the voltage. Its 650V rating handles the high output voltage (typically 400V) with margin, while the low RDS(on) minimizes conduction losses. The device's avalanche energy rating (1.2J) ensures robustness during line transients. The fast switching speed allows operation at frequencies above 100kHz, reducing the size of magnetic components. The TO-247 package facilitates mounting on heatsinks, which is essential for dissipating the heat generated in continuous conduction mode.
おすすめ
Solar Inverters
The STI38N65M5 is well-suited for solar inverter applications, where it is used in DC-DC boost converters and DC-AC inverters. Its high voltage rating (650V) accommodates the high DC bus voltages (up to 600V) in photovoltaic systems. The low on-resistance reduces power losses, improving the overall efficiency of the inverter, which is critical for maximizing energy harvest. The device's ruggedness, including avalanche capability, ensures reliable operation in outdoor environments with varying loads and temperatures. The TO-247 package allows for effective thermal management, which is essential for continuous operation in high ambient temperatures.
おすすめ
Motor Drives
In motor drive applications, the STI38N65M5 is used in the inverter stage to convert DC to AC for driving AC motors. Its high current rating (38A) and voltage rating (650V) make it suitable for industrial motor drives up to a few kilowatts. The low RDS(on) reduces conduction losses, while the fast switching speed enables high PWM frequencies, resulting in smoother motor control and reduced acoustic noise. The device's avalanche rating ensures it can handle inductive loads during switching transients. The TO-247 package is commonly used in motor drive modules, allowing for easy mounting on heatsinks.
おすすめ
Uninterruptible Power Supplies (UPS)
The STI38N65M5 is used in UPS systems for battery charging and inverter stages. Its high voltage rating (650V) allows it to handle the DC bus voltage (typically 400V) in online UPS systems. The low on-resistance minimizes losses, improving the efficiency of the UPS and extending battery life. The device's fast switching capability enables high-frequency operation, reducing the size of transformers and inductors. The TO-247 package provides good thermal performance, which is important for continuous operation in UPS applications.
おすすめ
Welding Equipment
In welding equipment, the STI38N65M5 is used in the inverter stage to generate high-frequency AC for the welding arc. Its high current (38A) and voltage (650V) ratings make it suitable for the demanding conditions of welding, where high currents are switched at high frequencies. The low RDS(on) reduces power losses, improving the efficiency of the welder. The device's ruggedness, including avalanche capability, ensures reliable operation under harsh conditions. The TO-247 package allows for effective cooling, which is essential for continuous welding operations.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: STI38N65M5 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | STW38N65M5 | IPW65R041CFD | FCH38N65 |
|---|---|---|---|---|
| Package | TO-247 | TO-247 | TO-247 | TO-247 |
| Brand | STMicroelectronics | STMicroelectronics | Infineon | onsemi |
| Drain-Source Voltage (VDS) | 650 V | 650 V | 650 V | 650 V |
| Continuous Drain Current (ID) at 25°C | 38 A | 38 A | 38 A | 38 A |
| On-Resistance (RDS(on)) | 0.099 ohm | 0.099 ohm | 0.041 ohm | 0.099 ohm |
| Total Gate Charge (Qg) | 110 nC | 110 nC | 110 nC | 110 nC |
| Avalanche Energy (EAS) | 1.2 J | 1.2 J | 1.2 J | 1.2 J |
| Operating Temperature Range | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C |
主な差別化要因
- Low on-resistance (0.099 ohm) for high efficiency （vs IPW65R041CFD)
- High avalanche energy (1.2 J) for ruggedness （vs FCH38N65)
- Proven MDmesh M5 technology （vs TK38N65W5)
設計ノート
The STI38N65M5 in TO-247 package has a junction-to-case thermal resistance of 0.5°C/W. For a power dissipation of 100W, the junction temperature rise is 50°C above case temperature. Ensure adequate heatsinking to keep the junction temperature below 150°C. Use thermal compound and proper mounting torque (typically 0.5-0.6 Nm) to minimize thermal resistance.
For through-hole TO-247, ensure the PCB has adequate copper area for the drain tab, which is electrically connected to the drain. Use multiple vias to connect the tab to inner layers for better thermal spreading. Keep the gate trace short and away from high dv/dt nodes to avoid parasitic coupling.
Do not exceed the gate-source voltage rating of ±30V. Use a gate driver with appropriate output voltage (typically 10-15V) and consider adding a gate resistor (e.g., 10 ohm) to dampen ringing. Ensure the device is fully turned on to minimize on-resistance and avoid operating in the linear region for extended periods.
コンプライアンス情報
RoHS compliant and halogen-free per STMicroelectronics datasheet. Not AEC-Q100 qualified as it is not an automotive-grade part.
