STI38N65M5 vs IPW65R041CFD 比較
詳細な並列比較: STI38N65M5 メーカー: STMicroelectronics および IPW65R041CFD メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
STMicroelectronics
STI38N65M5 - 650V 38A N-Channel Power MOSFET | STMicroelectronics
STI38N65M5 ✓ 生産中
仕様比較
| パラメータ | STI38N65M5 | IPW65R041CFD |
|---|---|---|
| ブランド | STMicroelectronics | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $2.19 | $4.68 |
| Polarity | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 650 V | — |
| Continuous Drain Current (ID) at 25°C | 38 A | — |
| Continuous Drain Current (ID) at 100°C | 24 A | — |
| Pulsed Drain Current (IDM) | 152 A | — |
| Gate-Source Voltage (VGS) | ±30 V | — |
| On-Resistance (RDS(on)) | 0.099 ohm (typical) | — |
| Total Gate Charge (Qg) | 110 nC | — |
| Input Capacitance (Ciss) | 4200 pF | — |
| Output Capacitance (Coss) | 180 pF | — |
| Reverse Transfer Capacitance (Crss) | 12 pF | — |
| Avalanche Energy (EAS) | 1.2 J | — |
| 動作温度範囲 | -55°C to +150°C | — |
| パッケージ | TO-247 | PG-TO247-3 (TO-247, through-hole) |
| 実装タイプ | Through Hole | Through Hole |
| RoHS ステータス | Compliant | Compliant (GREEN package per digchip specification listing) |
| ハロゲンフリー | Yes | — |
| Operating Mode | — | Enhancement |
| Technology | — | CoolMOS CFD2 (superjunction, fast body diode) |
| Drain-Source Breakdown Voltage V(BR)DSS | — | 650 V |
| On-Resistance RDS(on) | — | 41 mOhm |
| Continuous Drain Current ID | — | 68.5 A (Tc) |
| Power Dissipation PD | — | 500 W (Tc) |
| Total Gate Charge Qg | — | 300 nC |
| Gate-Source Voltage VGS | — | [DATA_NEEDED: VGS rating] |
| Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) range] |
| Thermal Resistance RthJC | — | [DATA_NEEDED: RthJC] |
| Body Diode | — | Integrated fast body diode |
| Package Color / Material | — | Green plastic (halogen-aware molding per digchip listing) |
| Application Segment | — | Industrial |