STL100N10F7 - 100V, 100A N-Channel Power MOSFET | STMicroelectronics
部品番号: STL100N10F7 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.65 | $16.50 |
| 100 | $1.35 | $135.00 |
| 500 | $1.15 | $575.00 |
| 1,000 | $0.95 | $950.00 |
STL100N10F7 概要
A Power MOSFET is a type of field-effect transistor optimized for switching and amplification in power electronics. It operates by controlling the flow of current between the drain and source terminals through an electric field applied at the gate. Power MOSFETs are widely used in switch-mode power supplies, DC-DC converters, motor drives, and battery management systems due to their fast switching speeds, low on-resistance, and high efficiency. They are a key component in the power management hierarchy, which includes power semiconductors, discrete semiconductors, and ultimately the broader category of electronic components.
Key features of the STL100N10F7 include a very low on-resistance (RDS(on)) of typically 4.5 mΩ at VGS = 10V, which minimizes conduction losses and improves overall system efficiency. The device also offers a wide gate-source voltage range of ±20V, ensuring robust gate drive compatibility. Its fast switching characteristics, with typical rise and fall times in the nanosecond range, enable high-frequency operation, reducing the size of magnetic components in power converters. The PowerFLAT 5x6 package provides a low thermal resistance of 1.1°C/W (junction-to-case), allowing efficient heat dissipation even at high current levels.
Technically, the STL100N10F7 is built using STMicroelectronics' advanced PowerMESH™ technology, which optimizes the trade-off between on-resistance and switching performance. The device features an integrated gate-source ESD protection, enhancing its robustness in harsh environments. The low gate charge (Qg) of approximately 60 nC reduces the drive power required, making it suitable for direct connection to PWM controllers. The device also includes a body diode with fast recovery characteristics, which is beneficial in bridge topologies where reverse recovery losses are a concern.
Typical applications include synchronous rectification in server and telecom power supplies, DC-DC converters for industrial and automotive systems, motor control in power tools and robotics, and battery protection circuits in electric vehicles. The high current rating and low on-resistance make it particularly well-suited for high-efficiency, high-current power stages where minimizing losses is critical.
When designing with the STL100N10F7, ensure adequate gate drive voltage (typically 10V) to achieve the lowest on-resistance. Pay attention to PCB layout to minimize parasitic inductance and ensure proper thermal management, especially when operating at high currents. The PowerFLAT 5x6 package requires a thermal pad connection to the PCB for optimal heat dissipation.
ドロップイン代替品: STL100N10F7 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
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STL100N10F7AG
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STL100N10F7G
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STL100N10F7 最大定格＆電気的特性
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at 25°C | 100 A |
| Continuous Drain Current (ID) at 100°C | 70 A |
| Pulsed Drain Current (IDM) | 400 A |
| Gate-Source Voltage (VGS) | ±20 V |
| On-Resistance (RDS(on)) at VGS=10V | 4.5 mΩ (typ), 5.5 mΩ (max) |
| Gate Charge (Qg) at VGS=10V | 60 nC (typ) |
| Input Capacitance (Ciss) | 4200 pF (typ) |
| Output Capacitance (Coss) | 700 pF (typ) |
| Reverse Transfer Capacitance (Crss) | 150 pF (typ) |
| Power Dissipation (PD) at 25°C | 136 W |
| 動作温度範囲 | -55°C to +175°C |
| パッケージ | PowerFLAT 5x6 |
| 実装タイプ | Surface Mount |
| RoHS ステータス | Compliant |
STL100N10F7 ピン構成
| ピン 1 | G — Gate |
| ピン 2 | S — Source |
| ピン 3 | S — Source |
| ピン 4 | S — Source |
| ピン 5 | D — Drain (exposed pad) |
安全動作領域 (DC)
主な用途
STL100N10F7 の用途: 6 件s: Synchronous Rectification, DC-DC Converters, Motor Control, Battery Protection, Server Power Supplies, Automotive Systems.
Synchronous Rectification
The STL100N10F7 is ideal for synchronous rectification in high-efficiency switch-mode power supplies (SMPS) for servers and telecom equipment. Its low on-resistance (4.5 mΩ) minimizes conduction losses, and its fast switching speed reduces switching losses, improving overall efficiency. In a typical synchronous rectifier circuit, the MOSFET replaces a Schottky diode, reducing forward voltage drop and increasing efficiency by 1-2%. The device's high current rating (100A) handles the high output currents of modern server power supplies, while the PowerFLAT 5x6 package ensures low thermal resistance for heat dissipation. Designers must ensure proper gate drive timing to prevent cross-conduction, and the low gate charge (60 nC) simplifies the gate drive circuit.
おすすめ
DC-DC Converters
The STL100N10F7 is well-suited for DC-DC converter topologies such as buck, boost, and buck-boost converters in industrial and automotive applications. Its 100V VDS rating allows operation from 48V or 72V input rails, while the 100A current capability supports high-power loads. The low on-resistance reduces conduction losses, and the fast switching characteristics enable high-frequency operation, reducing the size of inductors and capacitors. In a typical buck converter, the MOSFET is used as the high-side switch, with the gate driven by a PWM controller. The low gate charge (60 nC) allows efficient switching at frequencies up to 500 kHz. Thermal management is critical, and the PowerFLAT 5x6 package's exposed pad must be soldered to a large copper area for heat sinking.
おすすめ
Motor Control
The STL100N10F7 is used in motor control applications such as brushless DC (BLDC) motor drives for power tools, robotics, and automotive systems. Its high current rating (100A) and low on-resistance (4.5 mΩ) enable efficient switching of motor phases, while the fast body diode reduces reverse recovery losses in bridge topologies. In a typical three-phase BLDC motor drive, the MOSFETs are arranged in an H-bridge or half-bridge configuration, with gate drivers providing the necessary voltage and current. The device's 100V VDS rating is suitable for 48V motor systems, and its thermal performance allows continuous operation at high currents. Designers must ensure proper dead-time to prevent shoot-through, and the low gate charge simplifies the gate drive design.
おすすめ
Battery Protection
The STL100N10F7 is used in battery protection circuits for electric vehicles, power tools, and energy storage systems. Its low on-resistance minimizes voltage drop and power loss during charging and discharging, while the high current rating handles the high currents in battery packs. The device's 100V VDS rating is suitable for battery stacks up to 72V. In a typical battery protection circuit, the MOSFET is placed in series with the battery and controlled by a protection IC that monitors voltage and current. The low gate charge allows fast switching to disconnect the battery in fault conditions. The PowerFLAT 5x6 package's thermal performance ensures reliable operation under high current loads.
おすすめ
Server Power Supplies
The STL100N10F7 is used in server power supply units (PSUs) for synchronous rectification and DC-DC conversion stages. Its high efficiency and low on-resistance help meet the 80 PLUS Titanium efficiency standards. The device's 100V VDS rating is suitable for the 12V output rails and intermediate bus voltages. In a typical server PSU, the MOSFET is used in the LLC resonant converter or phase-shifted full-bridge topology, where its fast switching and low gate charge enable high-frequency operation. The high current rating (100A) handles the high output currents required by modern servers. Thermal management is critical, and the PowerFLAT 5x6 package's low thermal resistance allows efficient heat dissipation.
おすすめ
Automotive Systems
The STL100N10F7 is used in automotive systems such as electric power steering (EPS), DC-DC converters for hybrid vehicles, and battery management systems. Its 100V VDS rating is suitable for 48V mild-hybrid systems, and its high current rating handles the high currents in motor drives. The device's AEC-Q101 qualified version (STL100N10F7AG) is available for automotive applications. In a typical EPS system, the MOSFET is used in the motor drive bridge, where its low on-resistance and fast switching enable efficient operation. The device's wide operating temperature range (-55°C to +175°C) ensures reliability in harsh automotive environments.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: STL100N10F7 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | STL100N10F7AG | STL100N10F7G | IPB100N10S3-05 | NVMFS5C410N |
|---|---|---|---|---|---|
| Package | PowerFLAT 5x6 | PowerFLAT 5x6 (same) | PowerFLAT 5x6 (same) | D2PAK (TO-263) | SO-8FL |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | Infineon | onsemi |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 100 V | 100 V | 100 V |
| Continuous Drain Current (ID) at 25°C | 100 A | 100 A | 100 A | 100 A | 100 A |
| On-Resistance (RDS(on)) at VGS=10V | 4.5 mΩ (typ) | 4.5 mΩ (typ) | 4.5 mΩ (typ) | 5.0 mΩ (typ) | 4.8 mΩ (typ) |
| Gate Charge (Qg) at VGS=10V | 60 nC (typ) | 60 nC (typ) | 60 nC (typ) | 65 nC (typ) | 58 nC (typ) |
| Power Dissipation (PD) at 25°C | 136 W | 136 W | 136 W | 150 W | 125 W |
| Automotive Grade | No | Yes (AEC-Q101) | No | No | No |
主な差別化要因
- Low on-resistance of 4.5 mΩ （vs IPB100N10S3-05)
- PowerFLAT 5x6 package with low thermal resistance （vs NVMFS5C410N)
- Automotive-grade variant available （vs IPB100N10S3-05)
設計ノート
The STL100N10F7 in PowerFLAT 5x6 package has a junction-to-case thermal resistance of 1.1°C/W. At 100A continuous current and VDS=10V, conduction losses are approximately 45W (I²R). Ensure the exposed pad is soldered to a large copper area (at least 1 square inch) to keep the junction temperature below 175°C. Use thermal vias to improve heat transfer to the PCB ground plane.
For high-current switching, minimize the gate loop inductance by placing the gate driver close to the MOSFET. Use a low-inductance layout for the drain and source connections, and consider using a Kelvin source connection to reduce the effect of source inductance on switching performance. Place a 10Ω gate resistor to damp oscillations and a 100nF ceramic capacitor near the gate driver for stable operation.
Do not exceed the maximum gate-source voltage of ±20V, as this can damage the gate oxide. Ensure the gate drive voltage is at least 10V to achieve the lowest on-resistance. Also, be aware of the body diode's reverse recovery characteristics; in bridge topologies, use a fast-recovery diode or ensure the MOSFET's body diode is fast enough to avoid excessive losses.
コンプライアンス情報
RoHS compliant per STMicroelectronics product page. AEC-Q101 qualified version (STL100N10F7AG) is available for automotive applications.