STL100N10F7 - 100V, 100A N-Channel Power MOSFET | STMicroelectronics
MPN: STL100N10F7 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.65 | $16.50 |
| 100 | $1.35 | $135.00 |
| 500 | $1.15 | $575.00 |
| 1,000 | $0.95 | $950.00 |
Drop-in alternatives for STL100N10F7 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
STL100N10F7AG
✅ Drop-In📋 Reference alternative (not in catalog)
STL100N10F7G
✅ Drop-In📋 Reference alternative (not in catalog)
STL100N10F7 Maximum Ratings & Electrical Characteristics
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at 25°C | 100 A |
| Continuous Drain Current (ID) at 100°C | 70 A |
| Pulsed Drain Current (IDM) | 400 A |
| Gate-Source Voltage (VGS) | ±20 V |
| On-Resistance (RDS(on)) at VGS=10V | 4.5 mΩ (typ), 5.5 mΩ (max) |
| Gate Charge (Qg) at VGS=10V | 60 nC (typ) |
| Input Capacitance (Ciss) | 4200 pF (typ) |
| Output Capacitance (Coss) | 700 pF (typ) |
| Reverse Transfer Capacitance (Crss) | 150 pF (typ) |
| Power Dissipation (PD) at 25°C | 136 W |
| Operating Temperature Range | -55°C to +175°C |
| Package | PowerFLAT 5x6 |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
STL100N10F7 Pin Configuration
| Pin 1 | G — Gate |
| Pin 2 | S — Source |
| Pin 3 | S — Source |
| Pin 4 | S — Source |
| Pin 5 | D — Drain (exposed pad) |
Safe Operating Area (DC)
Typical Applications
STL100N10F7 is suitable for 6 applications: Synchronous Rectification, DC-DC Converters, Motor Control, Battery Protection, Server Power Supplies, Automotive Systems.
Synchronous Rectification
The STL100N10F7 is ideal for synchronous rectification in high-efficiency switch-mode power supplies (SMPS) for servers and telecom equipment. Its low on-resistance (4.5 mΩ) minimizes conduction losses, and its fast switching speed reduces switching losses, improving overall efficiency. In a typical synchronous rectifier circuit, the MOSFET replaces a Schottky diode, reducing forward voltage drop and increasing efficiency by 1-2%. The device's high current rating (100A) handles the high output currents of modern server power supplies, while the PowerFLAT 5x6 package ensures low thermal resistance for heat dissipation. Designers must ensure proper gate drive timing to prevent cross-conduction, and the low gate charge (60 nC) simplifies the gate drive circuit.
Recommended
DC-DC Converters
The STL100N10F7 is well-suited for DC-DC converter topologies such as buck, boost, and buck-boost converters in industrial and automotive applications. Its 100V VDS rating allows operation from 48V or 72V input rails, while the 100A current capability supports high-power loads. The low on-resistance reduces conduction losses, and the fast switching characteristics enable high-frequency operation, reducing the size of inductors and capacitors. In a typical buck converter, the MOSFET is used as the high-side switch, with the gate driven by a PWM controller. The low gate charge (60 nC) allows efficient switching at frequencies up to 500 kHz. Thermal management is critical, and the PowerFLAT 5x6 package's exposed pad must be soldered to a large copper area for heat sinking.
Recommended
Motor Control
The STL100N10F7 is used in motor control applications such as brushless DC (BLDC) motor drives for power tools, robotics, and automotive systems. Its high current rating (100A) and low on-resistance (4.5 mΩ) enable efficient switching of motor phases, while the fast body diode reduces reverse recovery losses in bridge topologies. In a typical three-phase BLDC motor drive, the MOSFETs are arranged in an H-bridge or half-bridge configuration, with gate drivers providing the necessary voltage and current. The device's 100V VDS rating is suitable for 48V motor systems, and its thermal performance allows continuous operation at high currents. Designers must ensure proper dead-time to prevent shoot-through, and the low gate charge simplifies the gate drive design.
Recommended
Battery Protection
The STL100N10F7 is used in battery protection circuits for electric vehicles, power tools, and energy storage systems. Its low on-resistance minimizes voltage drop and power loss during charging and discharging, while the high current rating handles the high currents in battery packs. The device's 100V VDS rating is suitable for battery stacks up to 72V. In a typical battery protection circuit, the MOSFET is placed in series with the battery and controlled by a protection IC that monitors voltage and current. The low gate charge allows fast switching to disconnect the battery in fault conditions. The PowerFLAT 5x6 package's thermal performance ensures reliable operation under high current loads.
Recommended
Server Power Supplies
The STL100N10F7 is used in server power supply units (PSUs) for synchronous rectification and DC-DC conversion stages. Its high efficiency and low on-resistance help meet the 80 PLUS Titanium efficiency standards. The device's 100V VDS rating is suitable for the 12V output rails and intermediate bus voltages. In a typical server PSU, the MOSFET is used in the LLC resonant converter or phase-shifted full-bridge topology, where its fast switching and low gate charge enable high-frequency operation. The high current rating (100A) handles the high output currents required by modern servers. Thermal management is critical, and the PowerFLAT 5x6 package's low thermal resistance allows efficient heat dissipation.
Recommended
Automotive Systems
The STL100N10F7 is used in automotive systems such as electric power steering (EPS), DC-DC converters for hybrid vehicles, and battery management systems. Its 100V VDS rating is suitable for 48V mild-hybrid systems, and its high current rating handles the high currents in motor drives. The device's AEC-Q101 qualified version (STL100N10F7AG) is available for automotive applications. In a typical EPS system, the MOSFET is used in the motor drive bridge, where its low on-resistance and fast switching enable efficient operation. The device's wide operating temperature range (-55°C to +175°C) ensures reliability in harsh automotive environments.
Recommended
Recommended Products Summary
Engineering reference data for STL100N10F7 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | STL100N10F7AG | STL100N10F7G | IPB100N10S3-05 | NVMFS5C410N |
|---|---|---|---|---|---|
| Package | PowerFLAT 5x6 | PowerFLAT 5x6 (same) | PowerFLAT 5x6 (same) | D2PAK (TO-263) | SO-8FL |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | Infineon | onsemi |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 100 V | 100 V | 100 V |
| Continuous Drain Current (ID) at 25°C | 100 A | 100 A | 100 A | 100 A | 100 A |
| On-Resistance (RDS(on)) at VGS=10V | 4.5 mΩ (typ) | 4.5 mΩ (typ) | 4.5 mΩ (typ) | 5.0 mΩ (typ) | 4.8 mΩ (typ) |
| Gate Charge (Qg) at VGS=10V | 60 nC (typ) | 60 nC (typ) | 60 nC (typ) | 65 nC (typ) | 58 nC (typ) |
| Power Dissipation (PD) at 25°C | 136 W | 136 W | 136 W | 150 W | 125 W |
| Automotive Grade | No | Yes (AEC-Q101) | No | No | No |
Key Differentiators
- Low on-resistance of 4.5 mΩ (vs IPB100N10S3-05)
- PowerFLAT 5x6 package with low thermal resistance (vs NVMFS5C410N)
- Automotive-grade variant available (vs IPB100N10S3-05)
Design Notes
The STL100N10F7 in PowerFLAT 5x6 package has a junction-to-case thermal resistance of 1.1°C/W. At 100A continuous current and VDS=10V, conduction losses are approximately 45W (I²R). Ensure the exposed pad is soldered to a large copper area (at least 1 square inch) to keep the junction temperature below 175°C. Use thermal vias to improve heat transfer to the PCB ground plane.
For high-current switching, minimize the gate loop inductance by placing the gate driver close to the MOSFET. Use a low-inductance layout for the drain and source connections, and consider using a Kelvin source connection to reduce the effect of source inductance on switching performance. Place a 10Ω gate resistor to damp oscillations and a 100nF ceramic capacitor near the gate driver for stable operation.
Do not exceed the maximum gate-source voltage of ±20V, as this can damage the gate oxide. Ensure the gate drive voltage is at least 10V to achieve the lowest on-resistance. Also, be aware of the body diode's reverse recovery characteristics; in bridge topologies, use a fast-recovery diode or ensure the MOSFET's body diode is fast enough to avoid excessive losses.
Compliance Information
RoHS compliant per STMicroelectronics product page. AEC-Q101 qualified version (STL100N10F7AG) is available for automotive applications.