MOSFET
제품 (1294)
IAUCN04S7L005ATMA1 - 40V 430A 0.52mΩ OptiMOS 7 MOSFET | Infineon
The Infineon IAUCN04S7L005ATMA1 is a 40 V N-channel automotive power MOSFET built on Infineon's OptiMOS™ 7 process technology, housed in a surface-mount PG-TDSON-8-43 package. It features an ultra-low R<sub>DS(on)</sub> of 0.52 mΩ (typical, per the Infineon product page) and supports a continuous drain current up to 430 A at T<sub>C</sub>=25°C with a maximum power dissipation of 179 W. The part is qualified to automotive-grade reliability standards, making it suitable for harsh-environment powertrain and chassis electronics. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switching device used to switch or amplify electrical signals in power-conversion circuits. The OptiMOS™ 7 family represents Infineon's seventh-generation 40 V to 300 V trench MOSFET platform, positioned within the broader taxonomy: trench MOSFET → power MOSFET → discrete semiconductor → power management component. Compared to planar MOSFETs, trench structures provide lower on-resistance per unit silicon area, which translates directly into lower conduction losses and higher power density. Key features of the IAUCN04S7L005 include best-in-class figure-of-merit R<sub>DS(on)</sub> × Q<sub>g</sub>, avalanche ruggedness, a logic-level compatible gate threshold, and an integrated source-connected lead frame that improves thermal performance. The PG-TDSON-8-43 (TDSON-8) package exposes the drain tab on the bottom for low-thermal-resistance PCB mounting, and its 8-pin configuration supports high-current applications where standard SO-8 footprints cannot deliver the required current density. The package is lead-free and RoHS compliant. The device is qualified for automotive AEC-Q101 standards and is targeted at 12 V/24 V automotive systems. OptiMOS 7 technology shrinks die area by roughly 30% versus the previous generation at the same R<sub>DS(on)</sub>, allowing the IAUCN04S7L005 to deliver 430 A continuous current in the compact TDSON-8 footprint. The combination of low Q<sub>g</sub> and low Q<sub>rr</sub> reduces switching losses and EMI, which is critical in high-frequency BLDC motor drives and synchronous rectification stages. Typical applications include automotive BLDC motor drives (EPS, water/oil pumps, fans), high-current DC/DC converters, solenoid drivers, LED lighting front-stages, and battery management protection in 12 V/24 V systems. The 0.52 mΩ R<sub>DS(on)</sub> minimizes conduction loss across the entire load range, improving system efficiency and reducing thermal stress on the PCB. When designing with this MOSFET, observe the SOA curve for high-current pulse conditions and ensure the gate driver can deliver sufficient peak current to charge Q<sub>g</sub> within the intended switching interval. A 10 Ω gate resistor is recommended to dampen ringing. Always check the maximum junction temperature of 175°C against the worst-case thermal envelope, and use a multi-via thermal pad pattern beneath the exposed drain pad to minimize R<sub>θJA</sub>. This page synthesizes distributor pricing, drop-in alternative cross-references, and practical design notes not found in the manufacturer datasheet, helping engineers evaluate the IAUCN04S7L005ATMA1 for new designs and as a drop-in replacement for end-of-life OptiMOS 5/6 parts.
IAUCN04S7L006ATMA1 - 40V 0.6mΩ 175A N-Ch MOSFET | Infineon
The Infineon IAUCN04S7L006ATMA1 is an automotive-grade N-channel power MOSFET rated at 40 V drain-source breakdown, 0.6 mΩ maximum on-resistance, and 175 A continuous drain current, housed in a PG-TDSON-8-43 surface-mount package. Designed for high-current, low-loss switching in 12 V and 24 V automotive systems, the device targets BLDC motor drives, electronic power steering, and battery-disconnect switches. The part carries the ATMA1 suffix indicating tape-and-reel packaging and is qualified to Infineon's automotive quality standards. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used in power electronics to convert and regulate electrical energy. N-channel MOSFETs like this one are the workhorses of modern synchronous rectification and motor drive topologies because their low on-resistance per unit area minimizes conduction loss. Within the broader taxonomy, this part belongs to the discrete semiconductor family: power MOSFET → N-channel enhancement MOSFET → logic-level gate MOSFET → automotive-grade MOSFET. Key features include an ultra-low typical R_DS(on) of 0.6 mΩ at V_GS = 10 V, optimized for high-current 12 V automotive rails, a logic-level compatible gate threshold enabling direct drive from 3.3 V or 5 V microcontrollers without a gate-driver stage in some configurations, and a 175 °C maximum junction temperature that supports under-hood thermal environments. The PG-TDSON-8-43 package exposes the drain on the bottom thermal pad, providing a very low thermal resistance path to the PCB copper. The device uses Infineon's advanced OptiMOS™-7 trench technology, which lowers both conduction and switching losses compared with previous generations. With reduced gate charge (Q_G) and low output capacitance, the part enables high-frequency PWM operation (typically 25-50 kHz for motor drives) without excessive switching loss. The combination of low R_DS(on) and small package footprint simplifies PCB layout by eliminating the need for bulky heat sinks in many 12 V applications. Typical applications include BLDC motor drives in electric power steering and HVAC blowers, 12 V battery-disconnect switches and eFuse circuits, DC-DC converter synchronous rectifier stages, and reverse-battery protection circuits. The automotive-grade qualification also makes the part suitable for use in 48 V mild-hybrid systems on the low-voltage side. When designing with this part, ensure the gate drive voltage reaches the full 10 V enhancement level under worst-case load transients to realize the datasheet R_DS(on). Also pay close attention to PCB layout: the PG-TDSON exposed pad must be soldered to a sufficiently large copper pour to achieve the rated thermal performance, and the source-sense connection (pin 2) should be tied to the source pad to avoid gate-oscillation. This page synthesizes distributor pricing, drop-in automotive-grade alternatives, and practical PCB layout guidance not found in the manufacturer datasheet alone, helping engineers shorten their BOM-qualification cycle.
IAUCN04S7L009ATMA1 - 40V 275A 0.91mΩ OptiMOS 7 N-MOSFET | Infineon
The Infineon IAUCN04S7L009ATMA1 is an N-channel 40 V automotive-grade OptiMOS™ 7 power MOSFET rated for 275 A continuous drain current (Tj) and 129 W power dissipation (Tc), housed in a surface-mount PG-TDSON-8-34 (TDSON EP) package. Key headline parameters include a maximum drain-source on-resistance of 0.91 mΩ at 10 V Vgs, a 40 V Vdss rating, and an ultra-low Rds(on) that minimizes conduction losses in high-current switching paths. An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device in which a positive gate-to-source voltage creates a conductive channel between drain and source. The "N-channel" designation means the conducting carriers are electrons, which provide higher mobility than holes and therefore lower on-resistance per unit silicon area. Automotive MOSFETs like the IAUCN04S7L009 belong to the discrete-semiconductor family, specifically the power-MOSFET subcategory, and serve as the active switching element in motor drives, DC/DC converters, and load switches within the broader power-management IC ecosystem. Key features include an extremely low typical Rds(on) of 0.91 mΩ, 175 A continuous drain current rating at the case, AEC-Q101 automotive qualification, and a logic-level gate drive compatible with 10 V. The OptiMOS™ 7 process technology uses a trench-gate structure with an advanced epitaxial layer that simultaneously reduces both conduction and switching losses, enabling higher power density and improved thermal behavior compared to previous generations. The PG-TDSON-8-34 package provides an exposed-drain thermal pad (theta_JA approximately 50 C/W on 1 in² copper, 2 oz) that is critical for dissipating the 129 W rated power. This makes the part well-suited for high-current BLDC motor drives, 12 V/24 V automotive e-fuses, battery management protection, and synchronous rectification in 48 V systems. The automotive qualification per AEC-Q101 confirms reliability for under-the-hood environments with operating junction temperatures up to 175 °C. Typical applications include automotive BLDC motor drives (cooling fans, water pumps, EPS), 12 V high-current load switches, DC/DC converter synchronous rectifiers, and battery protection in 12 V/48 V mild-hybrid systems. The wide SOA and low thermal impedance make the part ideal for repetitive hard-switching events in motor control. When designing with this device, ensure sufficient copper area on the PCB to keep junction temperature within the 175 °C maximum rating - the 0.91 mΩ Rds(on) still dissipates significant power at 200 A+ transients. Use a 10 V gate drive for full enhancement and minimize gate-loop inductance to control switching spikes above the 40 V Vdss limit. This page synthesizes Infineon distributor pricing, AEC-Q101-qualified drop-in alternatives from the Site MPN list, and practical thermal/SOA design notes beyond what is summarized on the manufacturer datasheet front page.
IAUCN04S7L014ATMA1 - 40V 120A OptiMOS N-MOSFET | Infineon
The Infineon IAUCN04S7L014ATMA1 is an automotive-grade N-channel OptiMOS power MOSFET rated at 40 V drain-source voltage, 1.43 mΩ maximum R<sub>DS(on)</sub>, and 120 A continuous drain current, housed in a surface-mount PG-TDSON-8-34 (TDSON EP) package. According to the Infineon part page and distributor listings, this part is engineered for low-voltage automotive high-current switching applications including BLDC motor drives, electronic power steering, and 12 V/24 V board-net loads. An N-channel power MOSFET is a voltage-controlled majority-carrier device that uses a gate signal to modulate conduction between source and drain. MOSFETs sit within the broader semiconductor hierarchy of transistors, and the IAUCN04S7L014 belongs to Infineon's OptiMOS 5 40 V automotive family - one of several generations optimized for progressively lower on-state resistance and gate charge. Low R<sub>DS(on)</sub> reduces conduction losses, which is critical for energy efficiency in battery-powered and high-current automotive loads. Key features of this part include 1.43 mΩ typical R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V, a 40 V drain-source breakdown voltage suitable for 12 V and 24 V automotive rails, and a 120 A continuous drain current rating. The PG-TDSON-8-34 (TDSON EP) package exposes the drain pad to the PCB for direct thermal coupling, enabling high power dissipation without external heatsinks in compact motor-drive modules. The device is qualified to AEC-Q101 for automotive reliability. The architecture uses Infineon's OptiMOS trench technology with a low-figure-of-merit (FOM = R<sub>DS(on)</sub> × Q<sub>g</sub>) to minimize switching losses at high frequency. The 8-pin TDSON EP package combines small outline with low package parasitics, allowing fast switching edges and clean gate drive. Combined with the AEC-Q101 qualification, this makes the device suitable for safety-relevant automotive electronics where thermal cycling, vibration, and lifetime reliability are mandatory. Typical applications for this part include BLDC motor drives for electric water pumps, oil pumps, and cooling fans, 12 V and 24 V automotive load switching such as solenoid and relay replacement, electric power steering (EPS) systems, and high-current DC-DC converter primary switches. The 1.43 mΩ R<sub>DS(on)</sub> is particularly important in motor-drive half-bridges where conduction losses directly affect efficiency and thermal rise. When designing with this part, keep the gate-drive voltage above 10 V to fully enhance the channel and achieve the rated R<sub>DS(on)</sub>. Use Kelvin-source connection if available to suppress gate-loop inductance, and minimize the source-to-ground parasitic inductance on the PCB. The exposed pad (EP) must be soldered to a sufficient copper area - typically 1 oz copper over at least 1 cm² - to keep junction temperature within safe limits under continuous high-current operation.
IAUCN04S7L019ATMA1 - 40V 1.91mΩ OptiMOS 7 N-MOSFET | Infineon
The Infineon IAUCN04S7L019ATMA1 is an N-channel 40 V OptiMOS™ 7 power MOSFET with 1.91 mΩ R<sub>DS(on)</sub> and 120 A continuous drain current in a PG-TDSON-8-33 surface-mount package, qualified to AEC-Q101 for automotive BLDC drive, e-motorcycle controller, and 12 V/24 V high-current switching applications. The device is part of Infineon's OptiMOS™ 7 40 V family and is supplied on 13-inch tape-and-reel with a 5000-piece standard pack per the ATMA1 ordering code suffix. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal power switch that uses an electric field at the gate to modulate current flow between drain and source. N-channel MOSFETs require a positive gate-to-source voltage to turn on and are the dominant low-side/high-side switch topology in power electronics. Within the broader taxonomy, MOSFETs sit under discrete semiconductors → transistors → power transistors, and the OptiMOS™ 7 family represents Infineon's latest-generation TrenchFET cells optimized for lowest figure-of-merit R<sub>DS(on)</sub>×Q<sub>g</sub>. Key features include an ultra-low 1.91 mΩ maximum R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V, an automotive-grade AEC-Q101 qualification, a logic-level compatible gate threshold, and an exposed-drain PG-TDSON-8-33 package that delivers a thermal resistance on the order of a single-digit °C/W to the PCB copper. The OptiMOS™ 7 cell geometry reduces switching losses by approximately 30% versus the previous OptiMOS™ 5 generation while halving R<sub>DS(on)</sub>×Q<sub>g</sub> figure of merit. Typical applications include brushless DC motor drives (BLDC) in electric vehicle auxiliaries, e-scooter and e-bike motor controllers, high-current synchronous buck converters for 12 V/24 V automotive rails, battery protection and load switching in 12 V lead-acid and Li-ion systems, and USB-PD / high-current Type-C power paths. The 120 A continuous current rating comfortably covers 100 A-class automotive e-fuse and motor-phase designs. When designing with this part, verify that V<sub>DS</sub> transient ringing under hard-switching stays below 40 V at minimum load, and place the gate driver within 10 mm of the gate pin to suppress parasitic turn-on. For multi-MOSFET parallel configurations, gate-source resistors of 10-100 Ω per device are recommended for dynamic current balancing. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet alone, giving engineers an at-a-glance decision tool for selecting or replacing the IAUCN04S7L019ATMA1 in automotive power designs.
IAUCN04S7L028ATMA1 - 40V 100A OptiMOS 7 N-MOSFET | Infineon
The Infineon IAUCN04S7L028ATMA1 is an N-channel 40 V, 100 A automotive-grade power MOSFET from Infineon's OptiMOS 7 family, housed in a surface-mount PG-TDSON-8-33 (TDSON-8 EP) package. Key headline parameters include a 40 V drain-source breakdown voltage (VDS), 100 A continuous drain current (ID), and an ultra-low 2.80 mOhm maximum on-state resistance (RDS(on)) at VGS=10 V, making it one of the lowest-FOM 40 V trench MOSFETs in this footprint. A power MOSFET is a voltage-controlled switch used to convert and manage electrical energy with high efficiency. Within the broader semiconductor taxonomy, this device sits at: MOSFET -> discrete semiconductor -> power semiconductor -> semiconductor. The OptiMOS 7 generation specifically targets synchronous rectification, motor control, and high-current automotive DC-DC conversion where conduction loss dominates. N-channel MOSFETs such as this one conduct when VGS exceeds the gate threshold (typically 1.8 V here), allowing low-side or high-side drive via a gate driver IC. Differentiating features include 58 W power dissipation (Ptot) at 25 C, a junction operating range of -55 C to +175 C (AEC-Q101 automotive grade), input capacitance (Ciss) of 1.578 nF, output capacitance (Coss) of 788 pF, and total gate charge (Qg) of 24 nC at VGS=10 V. The combination of low Qg and ultra-low RDS(on) yields an excellent figure-of-merit (FOM = RDS(on) x Qg) for high-frequency switching. PG-TDSON-8-33 package provides a low thermal resistance path via the exposed drain pad. The OptiMOS 7 architecture uses an advanced split-gate trench process that minimizes Miller charge while shrinking cell pitch, directly reducing both switching loss and conduction loss. Compared to previous OptiMOS 5 generations in the same package, RDS(on) is reduced by approximately 30 percent and Qg by 20 percent, allowing either cooler operation at the same load or higher load capability at the same temperature rise. Typical applications include BLDC motor drives (e.g., automotive EPS, e-bike, e-scooter, power tools), automotive 12 V/24 V synchronous rectification in DC-DC converters and ORing circuits, battery management system (BMS) protection, and high-current load switches in 12 V automotive power distribution. The AEC-Q101 qualification makes it suitable for under-hood and chassis-mounted ECUs. When designing with this MOSFET, ensure the gate driver can source/sink sufficient peak current (typically 1-2 A) to charge Qg quickly, keep the gate-loop PCB inductance below 5 nH to suppress VGS ringing, and provide adequate heatsinking through multiple thermal vias under the exposed pad. Avoid exceeding VGS(th) margin at cold temperatures where threshold rises sharply. This page synthesizes distributor pricing, parametric drop-in alternatives, and practical thermal/layout guidance not consolidated in the manufacturer datasheet. All specifications below are extracted from the Infineon IAUCN04S7L028 datasheet and current distributor listings.
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
The Infineon IAUCN04S7L042GATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 7 40V technology, housed in the SSO4G 5x6 leaded surface-mount package (PG-THSOG-4-1) designed for Insulated Metal Substrate (IMS) substrates and 100% legacy compatibility. Per the manufacturer datasheet, it supports a drain-to-source voltage of 40 V, a continuous drain current of 77 A (Tj), and a maximum power dissipation of 50 W at Tc. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the most widely used discrete switching device in power electronics. It belongs to the family of field-effect transistors (FETs), which are subdivided into single-FET and dual-FET packages. Within Infineon's taxonomy, the OptiMOS family represents the company's lowest-RDS(on) trench MOSFET generation, used wherever switching efficiency, thermal performance, and small form factor dominate the design. The '7' suffix denotes the 7th-generation OptiMOS process which delivers a markedly improved figure-of-merit (FOM = RDS(on) x Qg) versus OptiMOS 5 and earlier generations. Key features include a 40 V drain-source breakdown voltage (VDS), a continuous drain current rating of 77 A at junction temperature, a maximum power dissipation of 50 W at case temperature, and an optimized leadless SSO4G 5x6 footprint with gull-wing leads for visual inspection and AOI compatibility. The device targets automotive applications, particularly in 12 V battery systems where reliability, low conduction loss, and high current handling are mandatory. The OptiMOS 7 cell design minimizes gate charge and output capacitance, enabling faster switching and lower driver losses. The IAUCN04S7L042GATMA1 uses a trench-based N-channel enhancement-mode architecture fabricated on a silicon substrate. The leaded SSO4G 5x6 package has a much lower package parasitic inductance than the leadless SSO8 5x6 alternative, making it ideal for high-current switching at moderate switching frequencies. With a junction-to-case thermal resistance optimized for direct PCB thermal vias, the part is well suited for high-power-density designs mounted on IMS or FR4 substrates with thermal vias. Typical applications include 12 V automotive high-current switching such as electric power steering (EPS), braking systems, fuel pumps, cooling fans, transmission control units (TCU), body control modules (BCM), and DC-DC converter high-side switches in 12 V battery systems. The 40 V VDS rating provides sufficient margin for 12 V automotive load-dump transients up to 35 V. When designing with this part, ensure the gate drive voltage reaches 10 V for full RDS(on) minimization, and use sufficient PCB copper area or thermal vias to keep the junction temperature below the maximum rating. For switching applications above 50 kHz, pay attention to the package parasitic inductance which can cause ringing at the source node. This page synthesizes distributor pricing, drop-in alternatives, application guidance, and design notes not found in a single manufacturer datasheet, supporting both new design and second-source qualification decisions.
IAUCN04S7L050HATMA1 - 40V Dual N-Ch OptiMOS 7, 5.04mΩ | Infineon
The Infineon IAUCN04S7L050HATMA1 is an automotive-grade dual N-channel power MOSFET array built on Infineon's OptiMOS™ 7 40V process technology, delivering 65 A continuous drain current per channel and an ultra-low 5.04 mΩ maximum on-resistance at 10 V VGS in a compact PG-TDSON-8-57 (SuperSO8, half-bridge-compatible) surface-mount package. The device integrates two trench MOSFETs sharing a common thermal pad, enabling high power density in synchronous buck, half-bridge, and ORing topologies. Total power dissipation is rated at 40 W at Tc = 25 °C, and the package's exposed die-attach pad gives a junction-to-case thermal resistance suitable for 2-layer FR4 PCB layouts with a copper pour. An OptiMOS™ 7 power transistor is Infineon's seventh-generation 40V trench MOSFET family, optimized for low RDS(on) × Qg figure-of-merit and best-in-class switching performance. Within the broader semiconductor taxonomy, OptiMOS 7 devices sit under the category of N-channel power MOSFETs, which in turn fall under discrete semiconductors and ultimately active electronic components. The OptiMOS 7 generation reduces gate charge by typically 30% versus the prior OptiMOS 5 generation while tightening threshold-voltage tolerance for safer parallel operation in high-current rails. Key features include 40 V drain-source breakdown (VDS), ±20 V VGS rating, integrated ESD protection on the gate, 100% Rg-tested gates for avalanche ruggedness, and a logic-level compatible threshold voltage that supports 3.3 V and 5 V microcontroller GPIO drive. The 5.04 mΩ max RDS(on) is specified at VGS = 10 V, ID = 33 A, TJ = 25 °C, making the device well suited for 12 V automotive battery rails, 24 V mild-hybrid bus systems, and high-current synchronous buck converters. The dual-source / dual-drain pinout is configured for low-side + low-side or half-bridge MOSFET layouts with minimal parasitic source inductance. Typical applications include automotive 12 V/48 V DC-DC converters, electric power steering (EPS) motor drives, brake-by-wire and electronic stability control (ESC) actuator bridges, battery management system (BMS) protection circuits, and synchronous rectification in telecom 48 V point-of-load converters. The automotive-grade qualification (per Infineon product page, family-level AEC-Q101) makes it suitable for safety-critical subsystems that demand high reliability across -55 °C to +175 °C junction temperatures. When designing with this device, pay attention to gate-drive voltage headroom and ensure the VGS plateau voltage stays below 10 V under worst-case high-side dv/dt conditions. The half-bridge pinout simplifies gate-driver layout when paired with Infineon EiceDRIVER™ gate drivers, minimizing source-inductance-induced gate-amplitude bounce.
IAUCN04S7N006ATMA1 - 40V 175A OptiMOS N-Channel MOSFET | Infineon
The Infineon IAUCN04S7N006ATMA1 is an automotive-grade OptiMOS 5 N-channel power MOSFET rated at 40 V drain-source voltage and capable of continuous drain current up to 175 A, housed in the compact surface-mount PG-TDSON-8-43 package with an exposed drain pad. Headline parameters include an ultra-low typical on-state resistance of 0.63 mOhm at 10 V VGS and operation across a junction temperature range of -55 C to +175 C. The device is qualified to AEC-Q101, making it suitable for harsh automotive electrical environments. A power MOSFET is a voltage-controlled semiconductor switch that regulates current flow between drain and source terminals by applying a gate-source voltage. N-channel MOSFETs such as the IAUCN04S7N006ATMA1 sit in the broader taxonomy of discrete semiconductors (transistor -> FET -> MOSFET -> power MOSFET -> automotive-qualified MOSFET). OptiMOS 5 is Infineon's fifth-generation trench-technology platform, designed to minimize conduction and switching losses in 40 V and 60 V applications such as 12 V automotive electrical systems, where the bus voltage is nominally 12 V but can transiently reach 35-40 V during load dump. Key features of the IAUCN04S7N006ATMA1 include its 0.63 mOhm maximum RDS(on) at VGS = 10 V, low gate charge for fast switching transitions, integrated ESD protection, and 100% avalanche-tested reliability. The PG-TDSON-8-43 package provides an extremely low thermal resistance path through the exposed drain pad, which doubles as the electrical drain connection and the primary heatsinking surface. Technically, the OptiMOS 5 process achieves its low on-resistance through a charge-balanced trench cell design that maximizes channel width per unit silicon area while keeping gate-drain charge (Qgd) and output charge (Qoss) low. This balance yields both low conduction loss and low switching loss, critical for high-frequency BLDC motor drives and synchronous rectification in DC-DC converters. Typical applications include automotive BLDC motor drives (EPS, water pumps, oil pumps, fans), 12 V and 24 V synchronous rectification, battery management load switching, e-fuse circuits, and high-current DC-DC converter power stages. The wide safety margin between 40 V rating and 12 V automotive bus makes it robust against ISO 7637-2 transient pulses. When designing with this part, place it on a copper PCB pad sized to spread heat from the exposed drain. Keep the gate drive loop area minimal to control switching loss, and use a TVS or snubber if inductive loads can push drain voltage above 40 V during turn-off. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers and procurement specialists a single decision-ready reference.
IAUCN04S7N006TATMA1 - 40V 425A OptiMOS 7 N-MOSFET | Infineon
The Infineon IAUCN04S7N006TATMA1 is a 40 V N-channel power MOSFET in Infineon's OptiMOS 7 40 V family, packaged in the surface-mount PG-LHDSO-10-3 (5.30 mm width, exposed pad) outline. According to the manufacturer datasheet, the device is rated for 425 A continuous drain current at T_j and 205 W power dissipation at T_C, with a typical on-state resistance of 0.63 mΩ that makes it one of the lowest-R_DS(on) parts in its voltage class. What is an N-channel power MOSFET? An N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch whose drain-source channel uses electron flow as the majority carrier. It belongs to the broader category of discrete power semiconductors, which sits inside power management and motor/motion conversion. The "40 V" rating defines the maximum drain-to-source blocking voltage the device can sustain when off, and a low R_DS(on) directly reduces conduction losses in high-current paths such as automotive 12 V/24 V systems. Key features of the IAUCN04S7N006 include 0.63 mΩ typical R_DS(on) at V_GS = 10 V, automotive-grade qualification per Infineon's automotive MOSFET line, an exposed-lead package for low thermal resistance, and compatibility with logic-level gate drive when biased at 4.5 V V_GS. The PG-LHDSO-10-3 footprint is optimized for top-side cooling with a large solderable thermal pad. The OptiMOS 7 cell architecture uses a shielded-gate trench design that simultaneously reduces gate charge (Q_G), output charge (Q_OSS), and reverse-recovery charge (Q_RR). Compared to previous OptiMOS generations, this delivers lower switching losses at high dV/dt, allowing higher PWM frequencies in motor drives without sacrificing efficiency. Typical applications include 12 V and 24 V automotive BLDC motor drives (EPS, water pumps, oil pumps, fan control), high-current DC-DC converter high-side and low-side switches, battery protection in 12 V/24 V Li-ion packs, and industrial solenoid drivers. The very low R_DS(on) of 0.63 mΩ makes it well-suited to continuous high-current paths where conduction loss dominates thermal budget. When designing with this part, keep the gate-drive loop compact and use Kelvin-source connection if the package exposes one. Estimate: at 100 A continuous, conduction loss alone is approximately I²·R = 100² × 0.63 mΩ ≈ 6.3 W, so the PCB copper pour and thermal via array must be sized accordingly. This page synthesizes Infineon distributor pricing, drop-in alternatives, and practical design notes not all consolidated in the manufacturer datasheet.
IAUCN04S7N009ATMA1 - 40V 0.96mΩ 175A OptiMOS 7 | Infineon
The Infineon IAUCN04S7N009ATMA1 is a 40 V N-channel OptiMOS™ 7 power MOSFET rated for 175 A continuous drain current in a surface-mount PG-TDSON-8-34 package with an ultra-low 0.96 mΩ maximum R<sub>DS(on)</sub>. It is qualified to AEC-Q101 for automotive BLDC drives and high-current power systems. The OptiMOS 7 generation targets synchronous rectification, motor control, and high-power-density DC-DC conversion. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device used for switching and amplifying signals in power electronics. Power MOSFETs occupy the role of low-voltage fast-switching elements within the power semiconductor hierarchy, sitting between discrete MOSFETs and wider IGBT/MOSFET modules. The OptiMOS family is Infineon's family of trench-gate N-channel MOSFETs, and OptiMOS 7 represents the latest generation with the lowest figure-of-merit (FOM = R<sub>DS(on)</sub> × Q<sub>g</sub>) in the 40 V class. Key features include a 40 V drain-to-source breakdown (V<sub>DSS</sub>), a 10 V gate drive rating for full R<sub>DS(on)</sub> enhancement, and a continuous drain current of 175 A at 25°C case. The PG-TDSON-8-34 package exposes the die on a large source pad for low thermal resistance. The device is qualified to AEC-Q101, allowing direct use in automotive 12 V/24 V systems including 48 V mild-hybrid applications. The OptiMOS 7 technology uses an advanced trench-gate cell design with reduced gate charge and switching losses, optimized for high-frequency synchronous rectification. Compared with previous OptiMOS generations, the figure-of-merit improves by ~30%, enabling either higher efficiency at the same frequency or higher switching frequencies at the same efficiency in SMPS, OR-ing, and motor-drive applications. Typical applications include automotive BLDC motor drives (EPS, water pumps, oil pumps, fans), high-current OR-ing in 48 V bus systems, synchronous rectification in telecom and server SMPS, battery protection in 12 V/24 V/48 V packs, and DC-DC converter high-side and low-side switches. The 0.96 mΩ R<sub>DS(on)</sub> minimizes conduction loss in high-current paths. When designing with this MOSFET, pay attention to gate-drive voltage: full R<sub>DS(on)</sub> enhancement requires 10 V V<sub>GS</sub>; 4.5 V operation is possible with degraded on-resistance. Use a gate resistor in the 1-10 Ω range to control switching speed and ringing. The exposed pad must be soldered to a sufficiently large copper pour to achieve the rated thermal performance.
IAUCN04S7N012ATMA1 - 40V 1.2mΩ 120A N-Ch MOSFET | Infineon
The Infineon IAUCN04S7N012ATMA1 is an automotive-grade 40 V N-channel OptiMOS™-7 power MOSFET housed in a surface-mount PG-TDSON-8-34 (8-PowerTDFN) package. According to the manufacturer datasheet, it delivers a maximum drain current of 120 A and an ultra-low on-state resistance of 1.2 mΩ at 10 V VGS, making it one of the lowest-RDS(on) 40 V parts in the OptiMOS-7 40 V SSO8 family. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used to deliver high current to a load with minimal conduction loss. MOSFETs sit within the discrete-semiconductor hierarchy: MOSFET -> transistor -> discrete semiconductor -> semiconductor. The OptiMOS-7 platform is Infineon's latest-generation trench MOSFET family optimized for switching power-conversion applications, providing reduced gate charge, lower output capacitance, and improved thermal behavior versus prior generations. This 40 V rating places it in the low-voltage sweet spot for 12 V automotive systems, where transients from load-dump can spike above 35 V and still leave headroom. Key features include 1.2 mΩ maximum RDS(on) at VGS = 10 V, 120 A continuous drain current at 25 °C, an automotive-grade qualification, and an exposed-drain PG-TDSON-8-34 pad that delivers a junction-to-ambient thermal resistance suitable for high-current switching. The package is halogen-free and qualified for the harsh under-hood automotive environment. The 8-pin layout provides a large source-connected thermal pad that doubles as the electrical source connection. The OptiMOS-7 cell design shrinks figure-of-merit (FOM = RDS(on) × Qg) versus prior generations, which directly reduces switching losses in high-frequency converters. For a 12 V automotive bus running at 250 kHz, the IAUCN04S7N012 enables synchronous-rectifier stages with sub-nanosecond dead-time tolerance and minimal reverse-recovery charge. The trench-gate structure delivers a low threshold voltage suitable for direct 3.3 V microcontroller gate-drive interfaces. Typical applications include automotive 12 V BLDC motor drives (EPS, water pumps, oil pumps, fans), high-current synchronous rectification in DC-DC converters, battery-disconnect switches in mild-hybrid 48 V-12 V systems, and high-side load switches in ECU power distribution. The 120 A rating also supports server VRM stages where 12 V to point-of-load conversion demands extreme current density. When designing with this part, prioritize gate-drive strength: a 10 V VGS is required to reach the 1.2 mΩ RDS(on) figure, so a dedicated gate-driver IC is preferred over direct MCU drive. The exposed thermal pad must be soldered to a sufficiently large copper pour to achieve the rated continuous current without thermal runaway. This page synthesizes distributor stock, drop-in alternatives sourced from cross-reference data, and practical design notes that go beyond the datasheet's typical-application section to help engineers make a sourcing decision.
IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon
The Infineon IAUCN04S7N015GATMA1 is an N-channel 40 V OptiMOS 7 power MOSFET rated for 165 A continuous drain current and 96 W power dissipation (Tc) in a surface-mount PG-THSOG-4-1 (SSO4G 5x6) package. Its headline figures are 1.53 mΩ maximum R<sub>DS(on)</sub> at 10 V V<sub>GS</sub>, a 40 V drain-source breakdown, and AEC-Q101 automotive-grade qualification per the Infineon datasheet. A power MOSFET is a voltage-controlled three-terminal device (gate, drain, source) that uses an electric field on the gate insulator to modulate conduction between drain and source. The OptiMOS 7 family is Infineon's latest-generation 40 V trench MOSFET platform, optimized for ultra-low R<sub>DS(on)</sub> per unit area. Within the device hierarchy, this part sits as: power MOSFET -> discrete semiconductor -> N-channel trench MOSFET -> automotive-qualified switching transistor. Its very low on-resistance reduces I²R conduction loss, making it well suited to high-current 12 V/24 V automotive and industrial rails. Key differentiating features include the SSO4G 5x6 source-down footprint intended for IMS (Insulated Metal Substrate) PCBs, where the exposed source pad is soldered directly to the metal substrate for minimum thermal impedance. The device is qualified to AEC-Q101, supports 100% R<sub>g</sub>-tested production, and is rated for -55C to +175C junction operation. A low Q<sub>G</sub> and low Q<sub>OSS</sub> further reduce switching loss at the high dV/dt nodes found in 48 V mild-hybrid and high-current eMobility designs. Architecturally, OptiMOS 7 uses an advanced trench cell pitch combined with a refined epitaxial profile to push figure-of-merit (FOM = R<sub>DS(on)</sub> x Q<sub>G</sub>) below the previous OptiMOS 5 generation. Compared with the prior generation, the same die size now delivers lower on-resistance and faster switching, which directly improves converter efficiency and reduces heatsink demands. The PG-THSOG-4-1 (SSO4G) package replaces legacy D2PAK footprints in many 24 V/48 V designs while keeping a similar thermal resistance. Typical applications include automotive 12 V/24 V load switching (e-fans, water pumps, PTC heaters), 48 V mild-hybrid systems, high-current DC-DC converter synchronous rectification, and industrial brushless DC motor drives. In each of these uses, the device replaces larger DPAK/D2PAK parts, freeing PCB area while still meeting automotive reliability. When designing with this MOSFET, observe strict gate-drive discipline: use a 10 V V<sub>GS</sub> (with adequate source inductance control) and minimize the gate-loop PCB area to limit ringing. Because the SSO4G package is source-down, the PCB land pattern and thermal via array are critical - insufficient vias will push R<sub>thJC</sub> higher than the datasheet figure. This page synthesizes distributor pricing, drop-in automotive-grade alternatives from the same Infineon OptiMOS 7 family, and practical PCB-layout guidance not collected in the manufacturer datasheet alone.
IAUCN04S7N019DATMA1 - 40V Dual N-Channel MOSFET Array | Infineon
The Infineon IAUCN04S7N019DATMA1 is a dual N-channel MOSFET array built on Infineon's OptiMOS 7 40V technology platform, housed in a PG-TDSON-8-60 (SuperSO8) surface-mount package rated for 96W power dissipation (Tc). It is specified for 40V drain-source breakdown and continuous drain current up to 160A at junction temperature (Tj), making it suitable for high-current synchronous-rectification and automotive 12V/24V bus switching. A dual MOSFET array is a small outline surface-mount module that integrates two identical N-channel MOSFET dies in a common package, sharing the drain thermal pad but providing independent gate/source control on each device. Arrays sit within the broader discrete power-semiconductor hierarchy (MOSFET -> power MOSFET -> discrete semiconductor) and are commonly used where PCB area is constrained but two switches are needed, such as synchronous buck converters, half-bridges, and OR-ing controllers. Key features of this part include the 40V OptiMOS 7 platform with optimized FOM (RDS(on) x Qg), very low on-resistance per channel, integrated ESD protection on the gate, and a -55C to +175C operating junction temperature range that suits under-hood automotive environments. The 1.465 nF typical input capacitance enables fast switching transitions with minimal driver losses. Architecturally, each die uses a trench-gate vertical DMOS cell structure on the OptiMOS 7 process. This yields a low figure-of-merit and reduced Qrr (reverse-recovery charge), which is critical in hard-switched bridge topologies where body-diode recovery losses dominate. The shared source-down thermal pad provides low thermal resistance to the PCB copper pour. Typical applications include 12V automotive eFuse / load-switch blocks, BLDC motor half-bridges for fans and pumps, synchronous rectification in 12V buck converters for ADAS ECUs, USB-PD source switches, and high-current battery protection in 12V/24V Li-ion systems. The AEC-Q101 automotive qualification on the part number's prefix family supports deployment in road-vehicle electronics. When designing with this device, ensure the gate-driver voltage (VGS) is driven to 10V to achieve the rated low RDS(on) and to avoid partial-enhancement losses. The shared drain pad requires substantial PCB copper area (at least 1 sq inch on each side) to keep junction temperature within safe limits at high continuous current. This page synthesizes distributor pricing, drop-in OptiMOS 7 alternatives with the same PG-TDSON-8-60 footprint, and practical PCB layout guidance not found in the manufacturer datasheet alone.
IAUCN04S7N019GATMA1 - 40V OptiMOS 7 N-FET, 1.95 mOhm SSO4G | Infineon
The Infineon IAUCN04S7N019GATMA1 is an N-channel OptiMOS 7 power MOSFET rated at 40 V drain-source voltage, 147 A continuous drain current (Tj), and 1.95 mOhm typical on-resistance, packaged in the SSO4G 5x6 mm surface-mount footprint (PG-THSOG-4-1). It is designed for automotive and industrial high-current switching applications and supports IMS (Insulated Metal Substrate) as well as legacy FR4 PCB substrates, giving designers flexibility across thermal management strategies. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that conducts current between its drain and source terminals when a sufficient gate-source voltage is applied. OptiMOS is Infineon's trench-gate power MOSFET technology family that achieves low RDS(on) per unit silicon area, low gate charge, and high avalanche ruggedness, sitting within the broader class of power management semiconductors alongside IGBTs and SiC FETs. Key features include a 1.95 mOhm typical RDS(on) at VGS=10 V, 81 W maximum power dissipation (Tc), and an operating junction temperature range suitable for AEC-Q101 automotive qualification. The SSO4G 5x6 mm footprint uses a Kelvin-source-connected leadframe that decouples the gate-drive loop from the high-current power loop, reducing switching losses and improving gate-drive stability. Typical applications include 12 V and 24 V automotive load switches, electric power steering (EPS), brushless DC (BLDC) motor drivers, battery management system (BMS) protection, and DC-DC converter primary-side switches. The 1.95 mOhm RDS(on) minimizes conduction losses at the 30-100 A loads common in mild-hybrid and 48 V systems. When designing with this device, ensure the gate driver can source/sink sufficient transient current for the Qg specification, and verify SOA against the application load profile. Place the driver within 10 mm of the gate pin to minimize parasitic inductance that can cause ringing and false turn-on. This page synthesizes distributor stock, AEC-Q101 automotive qualification status, and pin-compatible SSO4G alternatives - information not consolidated in the manufacturer datasheet alone.
IAUCN04S7N024HATMA1 - 40V Dual N-Ch OptiMOS-7 2.46mΩ | Infineon
The Infineon IAUCN04S7N024HATMA1 is an automotive-grade 40 V dual N-channel MOSFET array built on Infineon's OptiMOS-7 40 V technology, featuring an ultra-low typical on-resistance of 2.46 mΩ per channel and a continuous drain current of 100 A (Tj) in a thermally enhanced PG-TDSON-8-56 (SSO8 HB 5x6) surface-mount package with maximum power dissipation of 75 W at Tc. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the workhorse of modern power electronics - a voltage-controlled switch used to convert, switch, and regulate electrical energy with high efficiency. Within the broader taxonomy, this dual-channel device belongs to the discrete semiconductor family, specifically power MOSFETs designed for high-current switching. The "dual" configuration integrates two independent N-channel MOSFETs in a single package, halving board space compared to two discrete parts while simplifying synchronous-rectifier and half-bridge layouts. Key differentiators include a 40 V drain-source breakdown voltage suitable for 12 V automotive load-dump environments, a low typical R_DS(on) of 2.46 mΩ at V_GS = 10 V that minimizes conduction loss, and AEC-Q101 automotive qualification that supports deployment in engine-control units, body electronics, and 48 V mild-hybrid systems. The OptiMOS-7 platform reduces gate charge (Qg) and figure-of-merit (FOM = R_DS(on) × Qg) versus the prior OptiMOS-5 generation, enabling higher switching frequencies and lower driver losses in switched-mode power supplies. The architecture uses a trench-gate cell design optimized for low FOM, with each die featuring an integrated source-connected sense option. The exposed top-side thermal pad of the PG-TDSON-8-56 package enables direct heat extraction to the PCB copper, supporting the 75 W Tc dissipation rating. The 5x6 mm footprint is industry-standard for Power-SO8 / SSO8 dual MOSFETs, allowing drop-in substitution from competing suppliers. Typical applications include automotive LED lighting drivers, electric power steering (EPS), brake-system electronics, brushless DC (BLDC) motor drivers, and high-current DC-DC converter stages for ADAS domain controllers. The dual configuration also suits synchronous buck and half-bridge topologies where the low-side and high-side switches benefit from matched R_DS(on) and Qg. When designing with this device, attention must be paid to gate-drive voltage (10 V recommended for full enhancement), PCB copper area for thermal management, and avalanche-energy handling for unclamped inductive switching events. Compared with single-MOSFET solutions, the dual package requires careful Kelvin-source layout to prevent common-source inductance from degrading switching performance. This page synthesizes distributor pricing, AEC-Q101 same-family alternatives, and practical design notes not found in the manufacturer datasheet.
IAUCN04S7N027GATMA1 - 40V 117A OptiMOS 7 N-Ch MOSFET SSO4G 5x6
The Infineon IAUCN04S7N027GATMA1 is an Automotive OptiMOS 7 N-channel power MOSFET rated at 40 V drain-source voltage and 117 A continuous drain current, housed in the surface-mount PG-THSOG-4-1 (SSO4G 5x6) package. It features a maximum on-resistance of 2.67 mOhm and is qualified for automotive applications requiring high efficiency and thermal robustness on insulated metal substrate (IMS) or legacy FR-4 boards. The OptiMOS 7 process technology delivers industry-leading figure of merit (FOM) for switching and conduction losses in 40 V synchronous rectification and motor drive topologies. A power MOSFET (metal-oxide-semiconductor field-effect transistor) is a voltage-controlled three-terminal switch that conducts current between drain and source when a sufficient gate-source voltage is applied. N-channel MOSFETs use electrons as the primary charge carriers and are favored for low-side switching, synchronous rectification, and half-bridge configurations because their lower Rds(on) per unit silicon area makes them more efficient than equivalent P-channel parts. The 40 V class targets 12 V automotive subsystems, 24 V industrial buses, USB-PD power paths, and small brushless DC motor drives. Key differentiating specifications include a 2.67 mOhm maximum Rds(on), 117 A continuous drain current, 70 W power dissipation at Tc, and compatibility with both IMS substrates and legacy FR-4 PCB assemblies. The SSO4G 5x6 footprint provides a Kelvin-source connection and a large exposed drain pad that minimizes package resistance and maximizes heat transfer to the PCB copper. The OptiMOS 7 cell architecture uses a refined trench-gate structure with lower gate charge and output capacitance than prior generations, reducing switching losses by up to 30 percent at 25 kHz to 100 kHz PWM frequencies. This makes the IAUCN04S7N027GATMA1 well suited for high-frequency synchronous rectification in isolated DC-DC converters and 48 V mild-hybrid systems stepping down to 12 V rails. Typical applications include 12 V automotive ECU power switching, synchronous rectification in isolated DC-DC converters, USB-PD and battery management system (BMS) protection circuits, and high-current BLDC motor half-bridges. The wide gate-source voltage range (typically +/-20 V abs max) simplifies driver compatibility with standard gate drivers. When designing with this part, ensure the gate driver can source and sink at least 1 A to charge the input capacitance quickly and avoid thermal runaway from switching losses. Use a Kelvin-source connection to isolate the gate loop from the high-current source path for clean gate waveforms in high-di/dt applications. This page synthesizes distributor pricing, drop-in alternatives from the same SSO4G footprint family, and practical PCB layout guidance not found in the standalone manufacturer datasheet.
IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon
The Infineon IAUCN04S7N037GATMA1 is an automotive-grade OptiMOS 7 N-channel power MOSFET rated at 40 V VDS with 91 A continuous drain current (Tj) and 3.65 mΩ typical on-state resistance, housed in a compact SSO4G 5x6 mm² PG-THSOG-4-1 surface-mount package designed for IMS (Insulated Metal Substrate) substrates and legacy PCB compatibility. A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate to modulate current flow between source and drain terminals. The OptiMOS 7 family belongs to the trench MOSFET technology hierarchy, descending from discrete semiconductors > transistors > MOSFETs > power MOSFETs. Automotive-grade OptiMOS 7 devices target switched-mode power conversion, motor drive, and high-current load switching where low conduction loss, fast switching, and ruggedness are required. Key features of the IAUCN04S7N037GATMA1 include an ultra-low RDS(on) of 3.65 mΩ typical at 10 V VGS, optimized switching figures of merit for high-frequency operation, and a 40 V drain-source voltage rating suitable for 12 V automotive systems. The SSO4G 5x6 mm² package offers an exposed drain pad for direct soldering to IMS substrates, enabling direct attach to metal substrates for superior thermal dissipation in high-current applications. The device is built on Infineon's advanced trench technology, which minimizes cell pitch and reduces parasitic capacitances (Ciss, Coss, Crss) for fast switching transitions. Low gate charge (Qg) and low Qgd reduce driver losses, while the low RDS(on) * Qg figure of merit translates to higher system efficiency in synchronous buck, boost, and half-bridge topologies. AEC-Q101 qualification confirms its suitability for automotive environments. Typical applications include 12 V automotive ECU power distribution, electric power steering (EPS), braking system controllers, DC-DC converters in 48V mild-hybrid systems, battery management system (BMS) protection circuits, and high-current motor drive half-bridges. The compact SSO4G footprint makes it especially attractive for space-constrained automotive ECUs. When designing with this MOSFET, prioritize thermal management via IMS substrate attach, ensure VGS drive voltage reaches at least 10 V for full RDS(on) benefit, and verify SOA against your specific load profile. Use a gate driver with sufficient peak current capability to charge the gate quickly and minimize switching losses. This page synthesizes distributor pricing, parametric comparison, drop-in alternatives, and practical design notes not aggregated in the manufacturer datasheet alone - providing engineering context that complements Infineon's product documentation.
IAUCN04S7N056DATMA1 - 40V N-Channel MOSFET 5.6mΩ | Infineon
The Infineon IAUCN04S7N056DATMA1 is an N-channel 40 V OptiMOS power MOSFET in a 5-pin TDSON-8-61 (PG-TDSON-8-61) surface-mount package, qualified to AEC-Q101 for automotive use. It specifies a maximum drain-to-source voltage VDS of 40 V, a continuous drain current of approximately 60 A at the silicon junction (62 A per distributor listings) and a power dissipation of 41 W at TC=25°C, with a typical on-resistance of 5.59 mΩ. The die is built on Infineon's OptiMOS 5 40 V platform, which delivers benchmark figure-of-merit R DS(on)×Q g for high-frequency switching and high-current load applications. A power MOSFET is a voltage-controlled three-terminal (gate, drain, source) semiconductor switch that uses an insulated-gate structure to modulate majority-carrier current flow. It belongs to the discrete-semiconductor hierarchy: MOSFET -> power MOSFET -> N-channel enhancement-mode MOSFET -> power switch. Unlike bipolar transistors, the MOSFET gate draws negligible DC current, making it easy to drive from logic-level signals, microcontroller PWM outputs or dedicated gate drivers, while achieving fast switching edges that minimize transition losses. Key features of the IAUCN04S7N056DATMA1 include a very low R DS(on) of 5.59 mΩ typical, gate charge optimized for high-frequency DC-DC conversion, a 175°C maximum operating junction temperature, and an automotive-grade qualification. The 5x6 mm TDSON-8-61 footprint uses an exposed drain pad that serves as both thermal pad and second source connection, keeping the package outline compact while providing a low thermal resistance path. The OptiMOS 5 process technology uses a trench-gate structure with a refined cell pitch to balance conduction loss against switching loss, making this part well suited to high-current synchronous rectification in 12 V automotive electrical systems and high-side/low-side buck converters. With its 5.6 mΩ typical on-resistance, the device can carry tens of amps continuously while keeping conduction losses to a few watts at typical loads. Typical applications include 12 V automotive load switching, high-current DC-DC synchronous buck converters, brushed and BLDC motor drive half-bridges, e-fuse and power-distribution switches, and high-current OR-ing / battery-disconnect circuits. The AEC-Q101 qualification makes it suitable for under-hood and chassis electronics exposed to wide temperature swings. When designing with this part, ensure the gate drive reaches at least 10 V (VGS(th) is in the 2-3 V range; full enhancement requires more) to achieve the datasheet R DS(on). Keep the gate-drive loop area minimal and place a 1 nF-10 nF gate-to-source resistor close to the IC to suppress ringing and prevent inadvertent turn-on from drain dv/dt coupling through C gd. This page synthesizes distributor pricing, AEC-Q101 qualifications, and practical design notes for the Infineon IAUCN04S7N056DATMA1 N-channel MOSFET that are not collated in a single manufacturer datasheet excerpt.
IAUCN08S7L013ATMA1 - 80V N-Channel OptiMOS 7 MOSFET | Infineon
The Infineon IAUCN08S7L013ATMA1 is an automotive-grade N-channel power MOSFET built on Infineon's OptiMOS 7 platform, rated at 80 V drain-source breakdown voltage and offering an industry-leading maximum on-resistance of 1.26 mΩ. Housed in a compact PG-TDSON-8-53 (TDSON-8 FL) surface-mount package with an exposed thermal pad, the device is specified for 293 A continuous drain current at the silicon junction and supports up to 219 W of power dissipation (Tcase = 25 °C). The 'ATMA1' suffix designates tape-and-reel packaging for high-volume automated assembly. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the dominant switching element in modern DC-DC conversion, motor control, and load management circuits. MOSFETs sit within the broader power semiconductor taxonomy (power MOSFET -> discrete semiconductor -> power management), and N-channel enhancement-mode devices like this one are preferred over P-channel equivalents because their lower on-resistance per unit silicon area translates directly into lower conduction loss. The OptiMOS 7 generation from Infineon represents the latest refinement of trench-gate technology, with optimized figure-of-merit (FOM = RDS(on) × Qg) targeting high-frequency switching applications. Key electrical characteristics include a 1.26 mΩ maximum on-resistance at VGS = 10 V, 175 A continuous drain current at 100 °C case, and threshold voltage compatible with 12 V automotive gate-drive architectures. The PG-TDSON-8-53 package's exposed die pad minimizes junction-to-case thermal resistance, enabling sustained high-current operation without external heatsinking in well-designed PCB layouts. The OptiMOS 7 cell structure also reduces body-diode reverse-recovery charge, beneficial for synchronous rectification and bridge topologies. Typical automotive applications include 48 V mild-hybrid (MHEV) systems, electric power steering (EPS), brake-by-wire, DC-DC converters between 12 V and 48 V buses, and high-current solenoid or motor drivers. The combination of ultra-low RDS(on) and compact packaging makes the IAUCN08S7L013ATMA1 particularly well suited to high-current synchronous rectification stages where conduction loss dominates the thermal budget. When designing with this part, observe strict PCB layout practices to minimize parasitic source inductance that can otherwise induce drain-voltage transients exceeding the 80 V rating. Use a gate-drive voltage of 10 V to achieve the specified RDS(on); under-driving at 4.5 V can increase on-resistance by 50 % or more. AEC-Q101 qualification supports deployment under the PPAP framework typical of OEM automotive supply chains.
IAUCN08S7L018ATMA1 - 80V 1.8mΩ OptiMOS 7 N-MOSFET | Infineon
The Infineon IAUCN08S7L018ATMA1 is an 80 V N-channel power MOSFET from the OptiMOS™ 7 automotive family, housed in a PG-TDSON-8-43 (5x6 mm) surface-mount package. It is rated for 210 A continuous drain current at the silicon junction and 169 W of power dissipation with the case held at 25 °C, with a maximum on-state resistance of 1.8 mΩ at 25 °C, making it one of the lowest-RDS(on) parts in its voltage class. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used for high-efficiency power conversion. It belongs to the hierarchy: MOSFET -> discrete semiconductor -> power transistor -> semiconductor device. Modern low-voltage trench MOSFETs such as this Infineon OptiMOS 7 part are optimized for switching power supplies, motor drives, and battery protection applications where conduction loss directly determines system efficiency. Key features include 80 V drain-source breakdown voltage, 1.8 mΩ maximum on-state resistance, 210 A continuous drain current (Tj), and a low gate charge Qg that enables fast switching at high frequencies. The OptiMOS 7 process technology uses an advanced split-gate trench structure that reduces both RDS(on) and gate charge simultaneously, a combination historically difficult to achieve. The PG-TDSON-8-43 (5x6 mm) package combines a small PCB footprint with an exposed drain tab that doubles as the thermal pad, giving a junction-to-case thermal resistance suitable for high-current switching. The automotive-grade qualification (per Infineon part description, "Automotive OptiMOS 7") supports deployment in 12 V/24 V automotive systems where reliability under thermal and vibration stress is mandatory. Typical applications include 48 V mild-hybrid e-mobility, automotive 12 V/24 V battery protection (battery management systems / BMS), high-current DC-DC converters, motor drives for electric power steering and water/oil pumps, and OR-ing switches. The part also fits industrial high-current switching and telecom 48 V hot-swap controllers. Design tip: because PG-TDSON-8-43 has the drain tab on the bottom, the PCB land pattern must use thermal vias directly under the exposed pad to move heat into the inner copper layers. Keep the high-current loop between drain and source as short as possible to limit parasitic inductance. This page synthesizes distributor pricing, same-family and cross-brand drop-in alternatives, automotive qualification context, and practical layout guidance that is not consolidated on a single manufacturer or distributor page.
IAUCN08S7L024ATMA1 - 80V 2.4mΩ OptiMOS 7 N-MOSFET | Infineon
The Infineon IAUCN08S7L024ATMA1 is an automotive-grade OptiMOS™ 7 N-channel power MOSFET rated at 80 V drain-source voltage with a maximum on-resistance of 2.4 mΩ and continuous drain current up to 177 A (Tj) / 150 A, packaged in the compact PG-TDSON-8-34 (SSO8 5x6 mm²) surface-mount footprint with a maximum power dissipation of 148 W at Tc. It targets high-current, low-loss switching in 12 V and 24 V automotive systems where conduction and switching losses directly affect fuel economy, thermal budget and EMI compliance. A power MOSFET is a voltage-controlled majority-carrier switch that uses an isolated gate to modulate conduction between source and drain terminals. Within the broader taxonomy, this device is an N-channel enhancement-mode MOSFET, itself a sub-family of discrete power transistors sitting under power semiconductors → MOSFETs → low-voltage MOSFETs. OptiMOS™ 7 represents Infineon's seventh-generation trench MOSFET platform, optimised for figure-of-merit (FOM = RDS(on) × Qg) reductions of typically 30-40% versus the previous generation, which translates directly into lower conduction loss, smaller gate-drive losses and reduced dead-time body-diode conduction in synchronous-rectifier stages. Key differentiating specifications include a maximum RDS(on) of 2.4 mΩ at VGS=10 V, an ultra-low gate charge (Qg) characteristic of the OptiMOS 7 family, and an avalanche-rated single-pulse body diode suitable for inductive load switching. The PG-TDSON-8-34 footprint provides a top-side exposed pad for low thermal resistance (θJA typically in the 35-40 C/W range on a 1 oz 4-layer PCB) and a gull-wing lead profile compatible with standard JEDEC reflow profiles. Architecturally, the device uses Infineon's advanced trench cell design with a very small pitch, which delivers low specific on-resistance while maintaining strong avalanche ruggedness and an intrinsic body diode with low Qrr for synchronous-rectifier dead-time management. The process is qualified to AEC-Q101 for automotive use, ensuring PPAP and long-term reliability across automotive temperature grades. Typical applications include automotive 12 V and 24 V high-current synchronous rectification, electric power steering (EPS) motor drive stages, brushless DC (BLDC) motor control in water/oil pumps and fans, battery management system (BMS) protection FETs and DC-DC converter primary-side switches. When designing with this part, prioritise gate-drive robustness — a 10 V gate drive is required to reach the rated 2.4 mΩ RDS(on), and a gate-source resistor of 10-100 Ω is recommended to dampen ringing and limit peak dV/dt-induced turn-on. Ensure the PCB layout provides a continuous copper pour under the exposed pad to achieve the lowest possible junction-to-ambient thermal resistance. This page synthesises verified distributor pricing, qualified drop-in alternatives and practical design notes not consolidated in the manufacturer datasheet — use it alongside the Infineon datasheet for a complete engineering picture.
IAUCN08S7L033ATMA1 - 80V 3.3mΩ OptiMOS 7 N-MOSFET | Infineon
The Infineon IAUCN08S7L033ATMA1 is an Automotive OptiMOS™ 7 N-channel power MOSFET rated at 80 V drain-source breakdown voltage with a maximum on-resistance of 3.3 mΩ at 10 V VGS, supporting continuous drain current of 130 A at junction temperature (Tj) and 118 W power dissipation at case temperature (Tc). It is housed in a compact PG-TDSON-8-34 (also marketed as SSO8, 5x6 mm²) surface-mount package, making it one of the lowest-RDS(on) parts in its voltage class for automotive and industrial power-conversion designs. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that uses an insulated gate to modulate current flow between drain and source terminals. Within the power semiconductor taxonomy, the IAUCN08S7L033ATMA1 sits in the N-channel enhancement-mode MOSFET family, which itself belongs to the broader discrete power transistor category used for switching and amplification in power electronics. Its primary system role is synchronous rectification, DC-DC conversion, and high-current load switching in switched-mode power supplies (SMPS), motor drives, and battery management systems. Key features of this OptiMOS 7 generation device include ultra-low RDS(on) of 3.3 mΩ maximum at VGS = 10 V, a logic-level compatible gate threshold that simplifies driver design, and an automotive-grade qualification per Infineon's AEC-Q100-compatible process flow. The 80 V rating provides ample headroom for 12 V and 24 V automotive bus systems including load-dump transients. The PG-TDSON-8-34 package exposes the drain through a large thermal pad, enabling direct PCB heat spreading and supporting the 118 W (Tc) power dissipation figure. Technically, the OptiMOS 7 platform uses Infineon's latest trench-cell geometry to minimize both conduction losses (low RDS(on)) and switching losses (low Qg, Qgd). Compared to OptiMOS 5, this generation typically delivers 30-40% lower RDS(on) per die area and improved Figure-of-Merit (FOM = RDS(on) × Qg), which directly translates into cooler operation, higher power density, and better efficiency in high-frequency converters. The low gate charge also enables faster switching transitions when paired with a suitably rated gate driver. Typical applications for the IAUCN08S7L033ATMA1 include high-current synchronous rectification in 48 V mild-hybrid DC-DC converters, battery protection and hot-swap controllers in 12 V/24 V automotive systems, motor-drive half-bridges for electric power steering (EPS) and water/oil pumps, and high-current USB-PD power delivery sinks. The 80 V rating also makes it suitable for industrial 24 V bus converters and telecom hold-up power stages. When designing with this MOSFET, pay close attention to gate-drive voltage (10 V recommended for full RDS(on)), PCB layout for the thermal pad (direct soldering to a copper pour of at least 1 sq inch is required at >50 W dissipation), and avalanche energy in unclamped inductive switching. Use a 10 kΩ gate-source pull-down to prevent unwanted turn-on during transients. This page synthesizes Infineon OptiMOS 7 datasheet specifications, distributor pricing, and pin-compatible drop-in alternatives curated from the XAIPART component database, providing engineering context that goes beyond the manufacturer datasheet.
IAUCN08S7L110ATMA1 - 80V 11mΩ N-Channel MOSFET | Infineon
The Infineon IAUCN08S7L110ATMA1 is an N-channel power MOSFET rated at 80 V drain-source breakdown voltage, with a typical on-state resistance of 11 mΩ at 10 V gate drive, supporting continuous drain current up to 50 A at 25 °C case and 58 W maximum power dissipation in the compact surface-mount PG-TDSON-8-34 (TDSON-8) package. It is engineered using Infineon's OptiMOS™ technology platform, optimized for high-efficiency switching in space-constrained automotive and industrial power stages. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching transistor used as the primary power-conversion element in synchronous buck converters, half-bridges, full-bridges, and motor-drive half-stages. Within the broader taxonomy, MOSFETs belong to discrete semiconductors, then power transistors, then FETs; they are the workhorse of switch-mode power supplies (SMPS) because of their fast switching, low conduction loss, and ease of paralleling. The IAUCN08S7L110 belongs to Infineon's 75 V–120 V automotive-grade MOSFET portfolio targeting 48 V mild-hybrid and high-current automotive LED/load-switch subsystems. Key features include an 11 mΩ typical R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V, a continuous drain-current rating of 50 A (T<sub>j</sub>) and pulsed capability suitable for repetitive inrush events, an avalanche-rated single-pulse body diode, and an operating junction temperature range of -55 °C to +175 °C qualified to automotive reliability expectations. The PG-TDSON-8-34 package features an exposed drain tab that doubles as the electrical drain connection and a low-thermal-resistance path to the PCB copper pad, allowing direct top-side cooling on the PCB. The IAUCN08S7L110ATMA1 uses Infineon's advanced trench-cell architecture, balancing low R<sub>DS(on)</sub> × area figure of merit with low gate charge (Q<sub>G</sub>) and low output charge (Q<sub>OSS</sub>) for high-frequency switching. The result is reduced switching loss in hard-switched topologies and improved light-load efficiency in synchronous-rectifier positions. The trench process is qualified per automotive-grade reliability flows. Typical applications include 48 V automotive systems (mild-hybrid auxiliary loads, e-motor drives), automotive LED lighting drivers, high-side load switches, synchronous rectification in isolated and non-isolated DC-DC converters, and industrial hot-swap / e-fuse circuits. The 80 V rating gives sufficient margin for 48 V bus transients and inductive kick events. When designing with this part, pay attention to gate-drive voltage: full enhancement (and lowest R<sub>DS(on)</sub>) requires V<sub>GS</sub>=10 V, and operation below ~6 V should be avoided. For high-current (>30 A continuous) designs, the PCB drain pad must be a multi-via array directly under the exposed tab; otherwise the silicon will thermally limit long before its rated current is reached. This page synthesizes distributor pricing, automotive-grade application context, and PCB-layout thermal guidance drawn from manufacturer documentation that is typically scattered across datasheets and application notes.