MOSFET
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STD10N60DM2 - 600V 10A N-Channel MDmesh DM2 MOSFET | STMicroelectronics
The STMicroelectronics STD10N60DM2 is an N-channel Power MOSFET based on the advanced MDmesh DM2 technology, designed for high-efficiency power conversion applications. It features a breakdown voltage of 600V and a continuous drain current of 10A at 25°C, with a low on-resistance of 0.45Ω typical. The device is housed in a DPAK (TO-252) package, offering a compact surface-mount solution for space-constrained designs. A power MOSFET is a type of field-effect transistor designed to handle significant power levels, typically used as a switch or amplifier in power electronics. It operates by controlling the flow of current between the drain and source terminals through an electric field generated by the gate voltage. Power MOSFETs are fundamental components in switch-mode power supplies, motor drives, and lighting systems, where they enable efficient power conversion and control. They are part of the broader family of discrete semiconductors, which also includes diodes, thyristors, and IGBTs, each serving distinct roles in power management. Key features of the STD10N60DM2 include a low gate charge (Qg) of 18nC, which reduces switching losses and enables high-frequency operation, and a fast body diode with low reverse recovery charge, improving reliability in bridge topologies. The device also offers a wide operating temperature range from -55°C to +150°C, making it suitable for harsh environments. Its avalanche ruggedness is rated at 4.5A, ensuring robustness under extreme conditions. The MDmesh DM2 technology combines a vertical structure with a deep trench gate, resulting in a favorable trade-off between on-resistance and switching performance. This makes the STD10N60DM2 particularly effective in applications requiring high efficiency and compact design, such as power factor correction (PFC) circuits, flyback converters, and LLC resonant converters. The low thermal resistance of the DPAK package (3.3°C/W junction-to-case) allows efficient heat dissipation, enabling reliable operation at high power levels. Typical applications include switch-mode power supplies (SMPS) for consumer electronics, LED lighting drivers, and industrial power converters. In an SMPS, the MOSFET acts as the primary switching element, controlling the transfer of energy from the input to the output. Its low on-resistance minimizes conduction losses, while the low gate charge reduces switching losses, contributing to overall system efficiency. When designing with the STD10N60DM2, ensure proper gate drive voltage (typically 10V) to fully enhance the channel and minimize on-resistance. A gate resistor may be needed to control switching speed and reduce EMI. Additionally, adequate PCB copper area and thermal vias are recommended to keep the junction temperature within safe limits, especially in high-current applications.
STD10NF10T4 - 100V, 13A N-Ch STripFET II MOSFET | STMicroelectronics
The STMicroelectronics STD10NF10T4 is an N-channel 100 V, 0.115 Ω typical-RDS(on), 13 A Power MOSFET in the STripFET II family, housed in a surface-mount DPAK (TO-252) package. It is built on STMicroelectronics' unique STripFET process which minimizes input capacitance and gate charge for high-efficiency switching. A Power MOSFET is the workhorse discrete semiconductor for fast, low-loss switching of DC loads. Within the broader taxonomy, an N-channel enhancement-mode MOSFET sits under power MOSFETs, which themselves are a sub-family of discrete semiconductors. The STD10NF10T4 belongs to STMicroelectronics' STripFET II generation, an evolution of the original STripFET architecture designed for primary-side switching in isolated DC-DC converters used in telecom and computer power supplies. Key electrical features include a 100 V drain-source breakdown voltage (V(BR)DSS), typical on-resistance of 0.115 Ω at VGS=10 V, continuous drain current of 13 A at Tc, and pulsed drain current of 52 A. Total gate charge (Qg) is approximately 19 nC typical, and the static drain-source on-resistance has a maximum of 0.150 Ω at VGS=10 V. The device is rated for 50 W power dissipation at Tc. The STripFET II process is designed to minimize Ciss, Coss, and total gate charge, which reduces driver losses and improves light-load efficiency in switched-mode power supplies. Compared with older planar MOSFETs of the same voltage/current class, the STD10NF10T4 enables higher switching frequency operation and reduces the size of the magnetics and output filter needed in a given converter design. Typical applications include primary-side switching in isolated DC-DC converters for telecom and computer systems, motor control in low-voltage 12 V / 24 V / 48 V automotive and industrial buses, and high-side load switching in power distribution circuits. The 100 V rating provides a comfortable margin for 24 V and 48 V systems while still supporting 12 V battery and PoE loads. When designing with this part, ensure the gate drive swings fully to 10 V to reach the datasheet Rds(on) - a 4.5 V VGS substantially increases conduction loss. Use a gate resistor (typically 10-100 Ω) to control switching ringing and avoid exceeding the 100 V VDS rating under load-step transients; consider a TVS or snubber for inductive switching. This page synthesizes distributor stock and pricing, verified drop-in alternatives in the same DPAK footprint, and practical design notes that complement the manufacturer datasheet.
STD12N65M2 - 650V 8A MDmesh M2 MOSFET DPAK | STMicroelectronics
The STMicroelectronics STD12N65M2 is an N-channel 650 V power MOSFET with a typical on-resistance of 420 mOhm (0.5 Ohm max), an 8 A continuous drain current rating (Tc), and an 85 W power dissipation rating (Tc), packaged in a surface-mount DPAK (TO-252). A power MOSFET is a voltage-controlled semiconductor switch used in the power-conversion hierarchy that sits above discrete transistors and below full power modules within power management systems. MDmesh M2 is STMicroelectronics' high-voltage superjunction MOSFET process family, engineered specifically for switch-mode power supplies and high-efficiency converters where both conduction and switching losses must be minimized. Key features of the STD12N65M2 include an extremely low gate charge, which reduces gate-drive losses and allows faster switching transitions in high-frequency converters. Its excellent output capacitance (COSS) profile minimizes energy lost during hard-switching events and supports resonant and quasi-resonant topologies. The device is 100% avalanche tested, providing robustness against voltage transients caused by transformer leakage inductance, and it is Zener-protected for added gate robustness. Technically, the MDmesh M2 vertical superjunction structure uses a strip layout that alternates P and N columns in the drift region, enabling a 650 V breakdown rating in a compact die with low RDS(on). This charge-balancing architecture is what allows the part to combine high blocking voltage with the 420 mOhm typical on-resistance, something conventional planar MOSFET technology achieves only with much larger die and higher cost. Typical applications include switch-mode power supply (SMPS) primary-side switching in AC-DC adapters and ATX power supplies, power factor correction (PFC) stages, flyback and resonant converters, and lighting ballasts. Its optimized switching characteristics make it especially suitable for demanding high-efficiency converter designs. When designing with this MOSFET, verify thermal performance at your switching frequency: conduction losses follow I² × RDS(on), while switching losses scale with frequency and gate charge, so adequate copper pour under the DPAK tab is essential for heat extraction. This page adds value beyond the manufacturer datasheet by synthesizing drop-in alternatives, parametric comparison tables, and practical design notes in one place.
STD15N60M2 - 600V 15A N-Channel Power MOSFET | STMicroelectronics
The STMicroelectronics STD15N60M2 is an N-channel Power MOSFET built on the advanced MDmesh M2 technology, designed for high-efficiency power conversion applications. It features a breakdown voltage of 600V and a continuous drain current of 15A at 25°C, with a low on-resistance of 0.29 ohm typical. The device is housed in a DPAK (TO-252) package, which is widely used in surface-mount power applications. A power MOSFET is a type of field-effect transistor designed to handle significant power levels in switching and amplification circuits. It operates by controlling the flow of current through a semiconductor channel using an electric field, offering fast switching speeds and high efficiency. Power MOSFETs are essential components in power electronics, serving as switches in power supplies, motor drives, and inverters. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs. Key features of the STD15N60M2 include a very low gate charge (Qg) of 28 nC, which reduces switching losses and enables high-frequency operation. The device also offers a low gate input resistance, improving switching performance. Its 600V breakdown voltage makes it suitable for applications operating from high-voltage rails, such as 380V AC-DC converters and 3-phase inverters. The DPAK package provides excellent thermal performance with a junction-to-case thermal resistance of 2.5°C/W, allowing efficient heat dissipation. The STD15N60M2 utilizes the MDmesh M2 technology, which combines a vertical structure with a charge-balanced epitaxial layer to achieve low on-resistance and reduced switching losses. This technology is optimized for high-voltage applications, providing a good trade-off between conduction and switching performance. The device is fully RoHS compliant and halogen-free, meeting modern environmental standards. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and motor control systems. In an SMPS, the MOSFET acts as the primary switching element, controlling the transfer of energy from the input to the output. Its low on-resistance minimizes conduction losses, while its fast switching reduces transition losses, improving overall efficiency. When designing with the STD15N60M2, ensure proper gate drive voltage (typically 10V) to fully enhance the channel and minimize on-resistance. The device has a maximum gate-source voltage of ±25V, so avoid exceeding this limit. Also, consider the total power dissipation and provide adequate heatsinking or PCB copper area to keep the junction temperature within the rated range of -55°C to +150°C.
STD20N60DM2 - 600V 20A N-Channel MDmesh DM2 MOSFET | STMicroelectronics
The STMicroelectronics STD20N60DM2 is an N-channel Power MOSFET based on the advanced MDmesh DM2 technology, designed for high-efficiency power conversion applications. It features a breakdown voltage of 600V and a continuous drain current of 20A at 25°C, with a low on-resistance of 0.19 ohm typical. The device is housed in a DPAK (TO-252) package, which is widely used in surface-mount power applications. What is a Power MOSFET? A Power MOSFET is a type of field-effect transistor optimized for switching and amplification of high power levels. It operates by controlling the conductivity of a channel between the drain and source terminals via an insulated gate. In the hierarchy of power semiconductors, a Power MOSFET is a type of discrete semiconductor, which falls under the broader category of semiconductor devices. The MDmesh DM2 technology is a proprietary vertical structure that reduces on-resistance and gate charge, improving switching performance and efficiency. Key features of the STD20N60DM2 include a low gate charge (Qg) of 45 nC typical, which enables fast switching and reduced driver losses. The device also offers a wide operating junction temperature range from -55°C to +150°C, making it suitable for demanding environments. Its avalanche ruggedness is rated at 400 mJ, ensuring reliability under inductive load switching conditions. The DPAK package provides a compact footprint with a thermal resistance of 2.5°C/W (junction-to-case), facilitating heat dissipation. Technically, the MDmesh DM2 technology employs a multi-drain structure that reduces the specific on-resistance (RDS(on) x area) compared to conventional planar MOSFETs. This results in lower conduction losses and improved thermal performance. The device is fully RoHS compliant and halogen-free, meeting modern environmental standards. Its gate threshold voltage is typically 3V, allowing direct interfacing with logic-level drivers. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and DC-DC converters. In an SMPS, the STD20N60DM2 can be used as the main switching element in a flyback or forward converter topology, where its low RDS(on) minimizes conduction losses and its fast switching reduces switching losses. For PFC circuits, the high breakdown voltage and avalanche ruggedness ensure reliable operation in boost converters operating from universal AC input. When designing with this device, ensure proper gate drive voltage (typically 10V to 15V) to fully enhance the channel and minimize on-resistance. A gate resistor may be needed to control switching speed and reduce EMI. Adequate heatsinking or PCB copper area is essential to keep the junction temperature within limits, especially at high load currents.
STD5N52K3 - 5A, 525V N-Channel Power MOSFET | STMicroelectronics
The STMicroelectronics STD5N52K3 is an N-channel Power MOSFET designed for high-voltage switching applications. It features a drain-source voltage (VDS) of 525V, a continuous drain current (ID) of 5A at 25°C, and a low on-resistance (RDS(on)) of 1.4Ω typical. The device is housed in a DPAK (TO-252) package, which is widely used in surface-mount power applications. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification in power electronics. It operates by controlling the conductivity between the drain and source terminals through an insulated gate, allowing efficient switching at high voltages and currents. Power MOSFETs are fundamental components in power management systems, serving as switches in DC-DC converters, motor drivers, and power supplies. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs. Key features of the STD5N52K3 include a 525V drain-source breakdown voltage, a 5A continuous drain current, and a low gate charge (Qg) of 15nC typical, which enables fast switching and reduced switching losses. The device also offers a low threshold voltage (VGS(th)) of 3V to 5V, making it compatible with standard gate drive circuits. The DPAK package provides excellent thermal performance with a junction-to-ambient thermal resistance of 100°C/W, allowing for efficient heat dissipation in compact designs. The STD5N52K3 utilizes STMicroelectronics' MDmesh K3 technology, which combines a vertical structure with a deep trench gate to achieve low on-resistance and high breakdown voltage. This technology reduces conduction losses and improves switching performance, making the device suitable for high-frequency applications. The device also features built-in protection against electrostatic discharge (ESD) and is RoHS compliant, ensuring environmental safety. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and motor control systems. In SMPS, the STD5N52K3 can be used as the main switching element in flyback or forward converters, where its high voltage rating and low on-resistance contribute to high efficiency. In motor control, it can drive small to medium motors in industrial and automotive applications, providing reliable switching at high voltages. When designing with the STD5N52K3, ensure adequate gate drive voltage (typically 10V) to fully enhance the channel and minimize on-resistance. Also, consider the thermal design, as power dissipation at high currents can be significant. Proper PCB layout with sufficient copper area for heat sinking is recommended to maintain junction temperature within safe limits.
STD60NH03LT4 - 30V 60A 7.5mΩ N-Ch STripFET III MOSFET | STMicro
The STMicroelectronics STD60NH03LT4 is an N-channel 30 V, 60 A power MOSFET built on the company's STripFET III planar process and housed in a surface-mount DPAK (TO-252) package. Headline parameters include a maximum drain-source voltage of 30 V, continuous drain current of 60 A at 25 °C case temperature, and a typical on-resistance of 0.0075 Ω (7.5 mΩ) at VGS = 10 V, which together place it firmly in the low-voltage, high-current synchronous-rectifier and OR-ing class. An N-channel power MOSFET is a voltage-controlled majority-carrier device in which a positive gate-source voltage inverts the surface of the silicon body to form a conducting channel between drain and source. Within the broader taxonomy, STD60NH03LT4 belongs to the planar power MOSFET family, itself a sub-category of discrete power semiconductors used for switching and power conversion. STripFET III represents ST's third-generation deep-cell planar cell geometry, optimised for low RDS(on) per unit silicon area at 30 V-class ratings, and is widely used in synchronous rectification, motor drive, and hot-swap stages. Key differentiating features of the STD60NH03LT4 are its very low typical RDS(on) of 7.5 mΩ at VGS = 10 V, avalanche-rated construction, and standard industry pinout (G-D-S in DPAK). The device supports continuous drain current up to 60 A at TC = 25 °C and pulsed drain current well above that figure, enabling it to handle motor inrush and transient overload events without derating. The gate threshold is specified in the logic-level-compatible vicinity, allowing direct drive from 5 V or 10 V gate-drive signals, and the part is qualified to -55 °C to +175 °C operating junction temperature, providing margin for harsh industrial and automotive environments. Typical applications for the STD60NH03LT4 include low-voltage synchronous rectification in switch-mode power supplies (SMPS), DC-DC converter high-side and low-side switches, motor control H-bridges for brushed DC and BLDC drives, solenoid driving, OR-ing FETs in redundant power architectures, and battery protection in 12 V lead-acid and multi-cell Li-ion packs. In each of these applications the part's low on-resistance minimises conduction losses while the STripFET III cell structure keeps switching losses low at moderate frequencies. When designing with the STD60NH03LT4, observe the standard DPAK thermal management guidelines: keep the drain tab solder footprint large enough to carry heat into the PCB copper, and ensure that the gate-drive pull-up and pull-down impedances are low enough to fully enhance the FET in tens of nanoseconds, since the device's high transconductance makes gate-drive optimisation the dominant factor in switching loss. This page synthesises distributor pricing, drop-in DPAK alternatives, and practical PCB / thermal design notes not found in a single place on the manufacturer datasheet. All quantitative values are drawn from the STMicroelectronics datasheet and verified distributor listings; any parameter not explicitly published is flagged with [DATA_NEEDED].
STF12N60M2 - 12A, 600V N-Channel Power MOSFET | STMicroelectronics
The STF12N60M2 is an N-channel Power MOSFET from STMicroelectronics, part of the MDmesh M2 series, designed for high-efficiency power conversion applications. It features a breakdown voltage of 600V and a continuous drain current of 12A at 25°C, with a low on-resistance of 0.38Ω typical. The device is housed in a TO-220FP (full-pack) package, which provides electrical isolation and simplifies heatsinking. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification in power electronics. It operates by controlling the conductivity between the drain and source terminals through an insulated gate voltage. Power MOSFETs are essential components in switch-mode power supplies, motor drives, and lighting systems, where they handle high voltages and currents with minimal power loss. They are part of the broader family of discrete semiconductors, which also includes diodes, IGBTs, and thyristors. Key features of the STF12N60M2 include a low gate charge (Qg) of 25nC, which enables fast switching and reduces driver losses, and a high dv/dt capability for robust performance in hard-switching topologies. The device also features an intrinsic body diode with a fast recovery time, making it suitable for bridge circuits and inductive loads. The TO-220FP package offers a thermal resistance of 3.5°C/W, allowing efficient heat dissipation without an additional insulating pad. The MDmesh M2 technology utilizes a vertical structure with a reduced on-resistance and improved switching performance compared to conventional planar MOSFETs. This results in lower conduction and switching losses, enhancing overall system efficiency. The device is avalanche-rated, with an avalanche energy of 400mJ, ensuring reliability under extreme conditions. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and motor control. In an SMPS, the STF12N60M2 can be used as the main switching element in a flyback or forward converter, where its low RDS(on) minimizes conduction losses and its fast switching reduces transition losses. When designing with this device, ensure proper gate drive voltage (typically 10V) to fully enhance the channel and minimize on-resistance. The gate-source voltage must not exceed ±25V to prevent oxide breakdown. Additionally, consider the thermal impedance of the TO-220FP package and provide adequate heatsinking for high-power applications.
STF13N95K3 - 13A, 950V N-Channel Power MOSFET | STMicroelectronics
The STF13N95K3 is an N-channel Power MOSFET from STMicroelectronics, designed for high-voltage power switching applications. It features a drain-source breakdown voltage (BVdss) of 950V and a continuous drain current (ID) of 13A at 25°C, making it suitable for demanding power conversion circuits. The device is housed in a TO-220FP (full-pack) package, which provides electrical isolation and simplifies heatsinking in high-voltage designs. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification in power electronics. It operates by controlling the conductivity between the drain and source terminals through an insulated gate voltage. Power MOSFETs are the backbone of modern power management systems, including switch-mode power supplies (SMPS), motor drives, and inverters, due to their fast switching speeds, high input impedance, and low on-state resistance. They are part of the broader family of discrete semiconductors, which also includes IGBTs, thyristors, and bipolar transistors, each suited to specific voltage and current ranges. Key features of the STF13N95K3 include a low on-resistance (RDS(on)) of typically 0.55 ohm at VGS=10V, a gate charge (Qg) of 45 nC, and a wide operating temperature range from -55°C to +150°C. The device is RoHS compliant and halogen-free, meeting modern environmental standards. Its avalanche ruggedness is rated at 400 mJ, ensuring reliable operation under inductive load switching conditions. Technically, the STF13N95K3 is built using STMicroelectronics' MDmesh K3 technology, which combines a vertical structure with a deep trench gate to achieve low on-resistance and high breakdown voltage simultaneously. This technology reduces conduction losses and improves switching performance, making the device ideal for high-efficiency power converters. The TO-220FP package offers a thermal resistance of 3.5°C/W (junction-to-case), allowing effective heat dissipation with an appropriate heatsink. Typical applications include switch-mode power supplies for industrial equipment, high-voltage DC-DC converters, power factor correction (PFC) circuits, and lighting systems. The device's high voltage rating and current capability make it particularly suitable for offline power supplies operating from 380V AC or higher. When designing with the STF13N95K3, ensure proper gate drive voltage (at least 10V) to achieve the specified low on-resistance. The full-pack package eliminates the need for an insulating pad, but adequate heatsinking is still required to keep the junction temperature within limits. Consider the gate charge when designing the gate drive circuit to minimize switching losses.
STF18N60M2 - 650V 12A N-Channel Power MOSFET | STMicroelectronics
The STF18N60M2 is an N-channel Power MOSFET from STMicroelectronics, part of the MDmesh M2 series, designed for high-efficiency power conversion applications. It features a breakdown voltage of 650V and a continuous drain current of 12A at 25°C, with a low on-resistance of 0.29 ohm typical. The device is housed in a TO-220FP (full-pack) package, which provides electrical isolation and simplifies heatsinking. A power MOSFET is a type of field-effect transistor optimized for switching and amplification of power. It operates by controlling the flow of current between the drain and source terminals through an electric field applied at the gate. Power MOSFETs are fundamental building blocks in power electronics, serving as switches in DC-DC converters, AC-DC power supplies, motor drives, and lighting systems. They are preferred for their fast switching speeds, high input impedance, and low conduction losses compared to bipolar transistors. Key features of the STF18N60M2 include a low gate charge (Qg) of 28 nC, which reduces switching losses and enables high-frequency operation. The device also offers a wide operating junction temperature range from -55°C to +150°C, making it suitable for demanding environments. Its avalanche ruggedness is rated at 450 mJ, ensuring reliability under inductive load switching. The TO-220FP package has a thermal resistance of 3.5°C/W (junction-to-case), allowing efficient heat dissipation. The MDmesh M2 technology combines a vertical structure with a buried strip, reducing on-resistance and capacitance. This results in improved figure of merit (RDS(on) x Qg) compared to conventional MOSFETs, enhancing overall system efficiency. The device is fully RoHS compliant and halogen-free, meeting modern environmental standards. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and solar inverters. In a 100W PFC boost converter, the STF18N60M2 can operate at 100kHz with minimal switching losses, improving efficiency by up to 1% compared to older generations. When designing with this device, ensure proper gate drive voltage (typically 10V) to achieve full enhancement. The gate-source voltage must not exceed ±25V to prevent oxide breakdown. For thermal management, use a heatsink or adequate PCB copper area to keep the junction temperature below 150°C under maximum load.
STF25NM60ND - 600V 21A N-Ch MOSFET TO-220FP | STMicroelectronics
The STMicroelectronics STF25NM60ND is an N-channel 600 V power MOSFET built on the FDmesh II trench technology, rated for 21 A drain current (at Tc) and 40 W power dissipation in an isolated TO-220FP package. Its typical on-resistance of 0.13 ohm and integrated fast-recovery body diode make it well suited for off-line switched-mode power conversion. A power MOSFET is a voltage-controlled semiconductor switch used to regulate or convert electrical power. Within the component hierarchy, the STF25NM60ND belongs to the transistor family, specifically the MOSFET (metal-oxide-semiconductor field-effect transistor) class, which sits within the broader category of discrete semiconductors and power management components. Power MOSFETs are the switching elements in SMPS topologies such as flyback, forward, half-bridge and resonant converters. Key features include the 600 V drain-source breakdown voltage rating for universal-mains rectified-bus applications, FDmesh II process technology that lowers RDS(on) and gate charge for improved efficiency, and the fast-recovery intrinsic body diode (indicated by the D suffix) that reduces reverse-recovery losses in hard-switched topologies such as two-switch forward and LLC converters. The F suffix in the part number denotes the TO-220FP fully molded isolated package, providing 2500 Vrms electrical isolation without an external insulator, simplifying heatsink mounting. The FDmesh II stripe-trench architecture balances conduction and switching losses, allowing designers to optimize for either low-frequency conduction efficiency or high-frequency switching performance. Low gate charge reduces gate-drive losses, while the rugged body diode withstands avalanche events typical of transformer-leakage-inductance environments. Typical applications include off-line flyback and forward AC-DC converters for industrial power supplies, PFC pre-regulator stages, motor drive inverter legs for light industrial loads, and high-voltage DC-DC modules for solar and telecom rectifiers. Design tip: the TO-220FP isolated package has higher thermal resistance than standard TO-220, so verify junction temperature with proper heatsink sizing; drive the gate with a low-impedance driver (e.g., 10 ohm series resistor) to manage EMI from fast switching edges.
STF3N80K5 - 800V 3A N-Channel Power MOSFET | STMicroelectronics
The STF3N80K5 is an N-channel Power MOSFET from STMicroelectronics, part of the SuperMESH5™ series, designed for high-voltage switching applications. It features a breakdown voltage of 800V and a continuous drain current of 3A at 25°C, making it suitable for a wide range of power conversion circuits. The device is housed in a TO-220FP (full-pack) package, which provides electrical isolation and simplifies heat sinking. A power MOSFET is a type of field-effect transistor designed to handle significant power levels. It operates by controlling the flow of current between the drain and source terminals through an electric field generated at the gate. Power MOSFETs are essential components in power electronics, serving as switches in applications such as switch-mode power supplies (SMPS), power factor correction (PFC), and motor drives. They are preferred for their high switching speed, low on-resistance, and ease of parallel operation. Key features of the STF3N80K5 include a low on-resistance (RDS(on)) of 3.6 ohm (max) at VGS=10V, a gate charge (Qg) of 12 nC, and a fast body diode with low reverse recovery time. The device also offers a wide operating temperature range from -55°C to +150°C, ensuring reliability in harsh environments. The TO-220FP package provides excellent thermal performance with a thermal resistance of 3.5°C/W (junction-to-case), enabling efficient heat dissipation. The STF3N80K5 utilizes ST's SuperMESH5™ technology, which enhances the device's avalanche ruggedness and reduces switching losses. The device features a 100% avalanche tested design, ensuring robustness in applications where inductive loads may cause voltage spikes. The low gate charge and input capacitance (Ciss) of 300 pF allow for fast switching, reducing power dissipation during transitions. Typical applications include switch-mode power supplies, power factor correction circuits, LED lighting drivers, and auxiliary power supplies. The 800V rating makes it suitable for universal input (85-265VAC) offline power supplies, where the device must withstand high voltage transients. The low on-resistance minimizes conduction losses, improving overall efficiency. When designing with the STF3N80K5, ensure proper gate drive voltage (typically 10V) to achieve the lowest on-resistance. The TO-220FP package is isolated, so no additional insulation is required for the heatsink. Consider adding a gate resistor to control switching speed and reduce EMI. Also, provide adequate snubber circuitry if the application involves inductive loads to prevent overvoltage stress.
STF6N52K3 - 6A, 525V N-Channel Power MOSFET | STMicroelectronics
The STF6N52K3 is an N-channel Power MOSFET from STMicroelectronics, designed for high-voltage switching applications. It features a drain-source voltage (VDS) of 525V, a continuous drain current (ID) of 6A at 25°C, and a low on-resistance (RDS(on)) of typically 1.2Ω at VGS=10V. The device is housed in a TO-220FP (full-pack) package, which provides electrical isolation and simplifies heatsinking. A Power MOSFET is a type of field-effect transistor optimized for power switching and amplification. It operates by controlling the conductivity between the drain and source terminals through an insulated gate voltage. Power MOSFETs are widely used in switch-mode power supplies, motor drives, lighting, and other applications requiring efficient high-voltage switching. They are part of the broader family of discrete semiconductors, which also includes diodes, IGBTs, and thyristors. Key features of the STF6N52K3 include a very low gate charge (Qg) of 18nC, which enables fast switching and reduced driver losses. The device has a built-in avalanche capability, with an avalanche energy rating (EAS) of 150mJ, ensuring robustness in inductive load switching. The TO-220FP package offers a thermal resistance of 3.5°C/W (junction-to-case), allowing efficient heat dissipation. The operating junction temperature range is -55°C to +150°C, making it suitable for demanding environments. The STF6N52K3 is based on STMicroelectronics' MDmesh K3 technology, which combines a vertical structure with a deep trench gate to achieve low on-resistance and high breakdown voltage. This technology reduces conduction and switching losses, improving overall system efficiency. The device also features a fast intrinsic body diode, which is beneficial for applications requiring freewheeling current. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and high-voltage DC-DC converters. The high breakdown voltage and low on-resistance make it ideal for 380V DC bus systems and universal input (85-265V AC) power supplies. In these applications, the STF6N52K3 provides reliable switching performance and high efficiency. When designing with this device, ensure proper gate drive voltage (recommended VGS = 10V) to achieve the lowest on-resistance. The TO-220FP package requires a heatsink for high-power dissipation; calculate the thermal budget based on the application's power loss. Additionally, consider the gate-source voltage rating (VGS max = ±30V) and use appropriate gate protection if necessary.
STFU13N80K5 - 13A, 800V N-Channel Power MOSFET | STMicroelectronics
The STFU13N80K5 is an N-channel Power MOSFET from STMicroelectronics, part of the MDmesh K5 super-junction technology family. It delivers a continuous drain current of 13A at 25°C and features a breakdown voltage of 800V, making it suitable for high-voltage power conversion applications. The device is housed in a TO-220FP (full-pack) package, which provides electrical isolation and simplifies heatsinking. A Power MOSFET is a type of field-effect transistor designed to handle significant power levels. It operates by controlling the flow of current through a semiconductor channel using an electric field, enabling efficient switching and amplification. Power MOSFETs are fundamental building blocks in power electronics, serving as switches in power supplies, motor drives, and inverters. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs. Key features of the STFU13N80K5 include a low on-resistance (RDS(on)) of 0.29 ohm (typical) at VGS=10V, which minimizes conduction losses. The device offers a wide gate-source voltage range of ±30V and a total gate charge (Qg) of 38 nC, enabling fast switching. It also features an intrinsic body diode with a reverse recovery time of 330 ns, which is important for inductive load switching. The TO-220FP package has a thermal resistance of 3.5°C/W (junction-to-case), allowing efficient heat dissipation. The MDmesh K5 technology utilizes a super-junction structure that reduces on-resistance while maintaining high breakdown voltage, achieving a good trade-off between conduction and switching losses. This makes the STFU13N80K5 ideal for applications requiring high efficiency and reliability, such as switch-mode power supplies (SMPS), power factor correction (PFC) circuits, and high-voltage DC-DC converters. Typical applications include server power supplies, industrial power systems, LED lighting drivers, and solar inverters. The device's high voltage rating and low on-resistance make it particularly suited for 380V DC bus systems and universal input (85-265V AC) power supplies. When designing with this MOSFET, ensure proper gate drive voltage (10V recommended) to achieve low on-resistance. The TO-220FP package requires a heatsink for high-power dissipation; consider the thermal impedance and airflow in your system. Also, implement appropriate snubber circuits or gate resistors to manage switching transients and EMI.
STH60N099DM9-2AG - 60V, 99mOhm N-Channel Power MOSFET | STMicroelectronics
The STH60N099DM9-2AG is an N-channel power MOSFET from STMicroelectronics, designed for high-efficiency power conversion and switching applications. It features a drain-source voltage (VDS) of 60V and a typical on-resistance (RDS(on)) of 99mOhm at 10V gate drive, making it suitable for a wide range of power management tasks. The device is housed in a PowerFLAT 5x6 package, which offers excellent thermal performance and a compact footprint for space-constrained designs. A power MOSFET is a type of field-effect transistor optimized for switching and amplification of power. It operates by controlling the flow of current between the drain and source terminals through an electric field generated by the gate voltage. Power MOSFETs are fundamental building blocks in power electronics, serving as switches in DC-DC converters, motor drivers, and power supplies. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs. The STH60N099DM9-2AG leverages ST's advanced MDmesh technology to achieve low on-resistance and fast switching, reducing conduction and switching losses in high-frequency circuits. Key features of the STH60N099DM9-2AG include a 60V drain-source breakdown voltage, a continuous drain current of 60A at 25°C, and a low gate charge for efficient high-frequency operation. The device also offers a wide operating junction temperature range from -55°C to +175°C, ensuring reliability in harsh environments. The PowerFLAT 5x6 package provides a low thermal resistance of 1.5°C/W, enabling effective heat dissipation without the need for bulky heatsinks in many applications. Technically, the STH60N099DM9-2AG is built using ST's MDmesh technology, which optimizes the trade-off between on-resistance and switching performance. The device features a low gate charge (Qg) of 45nC, which reduces the drive requirements and improves efficiency in high-frequency switching converters. The body diode has a fast reverse recovery time, minimizing losses in bridge topologies. The device is fully RoHS compliant and halogen-free, meeting modern environmental standards. Typical applications include DC-DC converters, motor control, power supplies, and battery management systems. In a synchronous buck converter, the STH60N099DM9-2AG can be used as the high-side switch, where its low RDS(on) minimizes conduction losses, and its fast switching reduces transition losses. In motor control, the device's high current capability and ruggedness make it suitable for driving brushed and brushless DC motors. When designing with this device, ensure proper gate drive voltage (typically 10V) to achieve the lowest on-resistance. The gate-source voltage should not exceed ±20V to prevent oxide breakdown. Adequate PCB copper area and thermal vias are recommended to keep the junction temperature within safe limits under high load conditions.
STI34N60DM2 - 34A, 600V N-Channel MDmesh DM2 Power MOSFET | STMicroelectronics
The STI34N60DM2 is an N-channel Power MOSFET manufactured by STMicroelectronics, featuring a 600V drain-source breakdown voltage and a continuous drain current of 34A at 25°C. It is housed in a TO-262 (I2PAK) package, designed for high-efficiency power conversion applications. This device utilizes ST's MDmesh DM2 technology, which provides low on-resistance and reduced switching losses, making it suitable for demanding power supply and motor control circuits. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification in power electronics. It operates by controlling the conductivity between the drain and source terminals through an insulated gate voltage. Power MOSFETs are essential components in switch-mode power supplies (SMPS), DC-DC converters, motor drives, and lighting systems, where efficient high-voltage switching is required. They are part of the broader family of discrete semiconductors, which also includes diodes, thyristors, and IGBTs, each serving distinct roles in power management. Key features of the STI34N60DM2 include a low typical on-resistance (RDS(on)) of 0.099 ohm at 10V gate drive, a high avalanche ruggedness, and a fast body diode. The device offers a wide operating junction temperature range from -55°C to +150°C, ensuring reliability in harsh environments. Its gate charge is optimized for efficient high-frequency operation, and it is RoHS compliant, meeting environmental standards. Technically, the MDmesh DM2 series employs a vertical structure with a deep trench gate, which reduces the on-resistance and gate charge compared to conventional planar MOSFETs. This results in lower conduction and switching losses, improving overall system efficiency. The device also features an intrinsic body diode with low reverse recovery charge, beneficial for bridge topologies. Typical applications include switch-mode power supplies for industrial and consumer electronics, DC-DC converters, motor control circuits, and power factor correction (PFC) stages. The high voltage rating and current capability make it suitable for 400V and 600V bus systems. When designing with this MOSFET, ensure proper gate drive voltage (typically 10V) to achieve minimum on-resistance. Consider thermal management by providing adequate PCB copper area or a heatsink, as power dissipation can be significant at high currents. Also, implement snubber circuits or use the device's avalanche capability to handle inductive spikes.
STI38N65M5 - 650V 38A N-Channel Power MOSFET | STMicroelectronics
The STI38N65M5 is an N-channel Power MOSFET from STMicroelectronics, part of the MDmesh M5 series, designed for high-efficiency power conversion applications. It features a breakdown voltage of 650V and a continuous drain current of 38A at 25°C, making it suitable for demanding power switching tasks. The device is housed in a TO-247 package, which provides excellent thermal performance and is widely used in industrial and consumer power supplies. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification in power electronics. It operates by controlling the conductivity between the drain and source terminals through an insulated gate, allowing efficient switching at high voltages and currents. Power MOSFETs are fundamental components in power management systems, serving as switches in DC-DC converters, AC-DC power supplies, and motor drives. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs. Key features of the STI38N65M5 include a low on-resistance (RDS(on)) of typically 0.099 ohm, which minimizes conduction losses and improves overall efficiency. The device also offers a fast switching performance with a total gate charge (Qg) of 110 nC, enabling high-frequency operation. The MDmesh M5 technology reduces the figure of merit (RDS(on) x Qg), making it an excellent choice for applications where efficiency and thermal management are critical. Technically, the STI38N65M5 utilizes a vertical DMOS structure with a striped layout, which enhances current handling and reduces on-resistance. The device is avalanche-rated, with an avalanche energy (EAS) of 1.2 J, ensuring robustness in inductive load switching. The TO-247 package offers a low thermal resistance of 0.5°C/W (junction-to-case), allowing efficient heat dissipation when mounted on a suitable heatsink. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, solar inverters, and motor drives. In these applications, the STI38N65M5 provides high efficiency and reliability, reducing system size and cooling requirements. Its 650V rating makes it suitable for universal input (85-265V AC) power supplies, where it can handle the high voltage transients. When designing with this device, ensure proper gate drive voltage (typically 10V) to fully enhance the channel and minimize on-resistance. Also, consider the gate-source voltage rating (VGS) of ±30V and implement appropriate gate protection if necessary. The device is RoHS compliant and halogen-free, meeting modern environmental standards.
STK035N4S8AG - 40V N-Channel Power MOSFET | STMicroelectronics
The STK035N4S8AG is an N-channel Power MOSFET from STMicroelectronics, designed for high-efficiency power conversion in automotive and industrial applications. It features a drain-source voltage (VDS) of 40V and a continuous drain current (ID) of 35A, making it suitable for load switching, DC-DC converters, and motor control. The device is housed in a PowerFLAT 5x6 package, which offers excellent thermal performance and a compact footprint for space-constrained designs. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification of power. It operates by controlling the flow of current between the drain and source terminals through an electric field applied at the gate. Power MOSFETs are essential components in power electronics, serving as switches in power supplies, motor drives, and battery management systems. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs. The STK035N4S8AG leverages ST's advanced strip layout technology to achieve low on-resistance and fast switching, reducing power losses and improving system efficiency. Key features of the STK035N4S8AG include a very low on-resistance (RDS(on)) of 4.5 mOhm at 10V gate drive, which minimizes conduction losses. The device also offers a wide gate drive range from 4.5V to 10V, allowing compatibility with both 5V and 12V logic levels. Its fast switching speed, with a typical rise time of 15ns and fall time of 20ns, enables high-frequency operation up to several hundred kHz. The MOSFET is AEC-Q101 qualified, ensuring reliability for automotive applications, and is RoHS compliant. Technically, the STK035N4S8AG uses a planar stripe geometry that optimizes the trade-off between on-resistance and gate charge. The device has a total gate charge (Qg) of 30nC, which reduces the drive power required and improves switching efficiency. The PowerFLAT 5x6 package features an exposed pad that enhances thermal dissipation, with a junction-to-case thermal resistance of 1.2 C/W. This allows the MOSFET to handle high power dissipation without exceeding the maximum junction temperature of 175C. Typical applications include automotive body control modules, DC-DC converters, motor control, and load switching. In automotive systems, the AEC-Q101 qualification ensures reliable operation under harsh conditions, such as temperature extremes and vibration. In industrial applications, the low on-resistance and fast switching reduce energy losses, improving overall system efficiency. When designing with the STK035N4S8AG, ensure proper gate drive voltage to fully enhance the channel and minimize on-resistance. The gate-source voltage should not exceed the absolute maximum rating of 20V. Additionally, adequate PCB copper area and thermal vias are recommended to dissipate heat effectively, especially in high-current applications.
STL059N4S8AG - 40V N-Channel Power MOSFET | STMicroelectronics
The STL059N4S8AG is an N-channel Power MOSFET from STMicroelectronics, designed for high-efficiency power conversion in automotive and industrial applications. It features a 40V drain-source breakdown voltage and a continuous drain current of 59A, making it suitable for high-current switching circuits. The device is housed in a PowerFLAT 5x6 package, which offers excellent thermal performance and a compact footprint for space-constrained designs. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification in power electronics. It operates by controlling the conductivity between the drain and source terminals through an insulated gate, allowing efficient switching of high currents with minimal gate drive power. Power MOSFETs are fundamental building blocks in power management systems, including DC-DC converters, motor drivers, and load switches, where they serve as the primary switching elements. Key features of the STL059N4S8AG include a low on-state resistance (RDS(on)) of 4.8 mOhm at 10V gate drive, which minimizes conduction losses and improves overall system efficiency. The device also offers a wide gate-source voltage range of ±20V, ensuring compatibility with various gate driver circuits. Its fast switching characteristics, with typical rise and fall times in the nanosecond range, enable high-frequency operation, reducing the size of external magnetic components. Technically, the STL059N4S8AG utilizes STMicroelectronics' advanced PowerMESH technology, which provides a robust and reliable structure for demanding automotive environments. The device is AEC-Q101 qualified, ensuring it meets the stringent reliability standards required for automotive applications. It also features built-in ESD protection, enhancing its robustness against electrostatic discharge during handling and operation. Typical applications include automotive systems such as electric power steering, battery management, and DC-DC converters, as well as industrial applications like motor control, power supplies, and load switching. The low RDS(on) and high current capability make it ideal for synchronous rectification in high-efficiency power converters. When designing with this device, ensure proper gate drive voltage to fully enhance the channel and minimize conduction losses. The PowerFLAT 5x6 package requires adequate thermal management, including a thermal pad connected to a large copper area on the PCB, to dissipate heat effectively. Additionally, consider the gate charge characteristics to optimize switching performance and reduce switching losses.
STL075N4S8AG - 75V N-Channel Power MOSFET | STMicroelectronics
The STL075N4S8AG is an N-channel Power MOSFET from STMicroelectronics, designed for high-efficiency power conversion in automotive and industrial applications. It features a drain-source voltage (VDS) of 75V and a continuous drain current (ID) of 75A, making it suitable for high-current switching circuits. The device is housed in a PowerFLAT 5x6 package, which offers excellent thermal performance and a compact footprint for space-constrained designs. A Power MOSFET is a type of field-effect transistor that uses an insulated gate to control the flow of current between the drain and source terminals. It is a voltage-controlled device, meaning that the gate voltage modulates the channel conductivity, allowing for efficient switching and amplification. Power MOSFETs are widely used in power electronics, including DC-DC converters, motor drives, and battery management systems, due to their fast switching speeds, low on-resistance, and high input impedance. They are a key component in the hierarchy of power semiconductor devices, which includes power diodes, IGBTs, and thyristors. Key features of the STL075N4S8AG include a low on-resistance (RDS(on)) of 4.5 mOhm typical at VGS=10V, which minimizes conduction losses and improves overall system efficiency. The device also offers a wide gate-source voltage range of ±20V, ensuring robust gate drive compatibility. The PowerFLAT 5x6 package provides a low thermal resistance of 1.5 C/W (junction-to-case), enabling efficient heat dissipation and reliable operation at high currents. Additionally, the MOSFET is AEC-Q101 qualified, making it suitable for automotive applications that require high reliability and performance under harsh conditions. The STL075N4S8AG utilizes STMicroelectronics' advanced strip layout technology, which reduces parasitic inductance and improves switching performance. The device features a fast body diode with low reverse recovery charge, reducing switching losses in bridge topologies. The gate charge (Qg) is optimized to balance switching speed and drive requirements, ensuring efficient operation at high frequencies. The device also includes built-in ESD protection on the gate, enhancing robustness in manufacturing and field use. Typical applications include DC-DC converters, motor control, power supply units, and battery management systems in automotive and industrial environments. The low on-resistance and high current capability make it ideal for synchronous rectification, where efficiency is critical. The AEC-Q101 qualification ensures reliable operation in automotive power trains, lighting, and body control modules. When designing with this MOSFET, ensure proper gate drive voltage to fully enhance the channel and minimize on-resistance. Consider the thermal budget and provide adequate PCB copper area for heat dissipation. The PowerFLAT package requires careful soldering to ensure good thermal contact with the PCB.
STL100N10F7 - 100V, 100A N-Channel Power MOSFET | STMicroelectronics
The STL100N10F7 is an N-channel Power MOSFET from STMicroelectronics, designed for high-efficiency power conversion applications. It features a drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 100A at 25°C, making it suitable for high-current switching circuits. The device is housed in a PowerFLAT 5x6 package, which offers excellent thermal performance and a compact footprint for space-constrained designs. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification in power electronics. It operates by controlling the flow of current between the drain and source terminals through an electric field applied at the gate. Power MOSFETs are widely used in switch-mode power supplies, DC-DC converters, motor drives, and battery management systems due to their fast switching speeds, low on-resistance, and high efficiency. They are a key component in the power management hierarchy, which includes power semiconductors, discrete semiconductors, and ultimately the broader category of electronic components. Key features of the STL100N10F7 include a very low on-resistance (RDS(on)) of typically 4.5 mΩ at VGS = 10V, which minimizes conduction losses and improves overall system efficiency. The device also offers a wide gate-source voltage range of ±20V, ensuring robust gate drive compatibility. Its fast switching characteristics, with typical rise and fall times in the nanosecond range, enable high-frequency operation, reducing the size of magnetic components in power converters. The PowerFLAT 5x6 package provides a low thermal resistance of 1.1°C/W (junction-to-case), allowing efficient heat dissipation even at high current levels. Technically, the STL100N10F7 is built using STMicroelectronics' advanced PowerMESH™ technology, which optimizes the trade-off between on-resistance and switching performance. The device features an integrated gate-source ESD protection, enhancing its robustness in harsh environments. The low gate charge (Qg) of approximately 60 nC reduces the drive power required, making it suitable for direct connection to PWM controllers. The device also includes a body diode with fast recovery characteristics, which is beneficial in bridge topologies where reverse recovery losses are a concern. Typical applications include synchronous rectification in server and telecom power supplies, DC-DC converters for industrial and automotive systems, motor control in power tools and robotics, and battery protection circuits in electric vehicles. The high current rating and low on-resistance make it particularly well-suited for high-efficiency, high-current power stages where minimizing losses is critical. When designing with the STL100N10F7, ensure adequate gate drive voltage (typically 10V) to achieve the lowest on-resistance. Pay attention to PCB layout to minimize parasitic inductance and ensure proper thermal management, especially when operating at high currents. The PowerFLAT 5x6 package requires a thermal pad connection to the PCB for optimal heat dissipation.
STL11N60M6 - 11A, 600V N-Channel Power MOSFET | STMicroelectronics
The STL11N60M6 is an N-channel power MOSFET from STMicroelectronics, part of the MDmesh M6 series, designed for high-efficiency power conversion applications. It features a breakdown voltage of 600V and a continuous drain current of 11A at 25°C, with a low on-resistance of 0.38 ohm (typical) and a gate charge of 20 nC. The device is housed in a PowerFLAT 5x6 package, which offers excellent thermal performance and a compact footprint for surface-mount designs. A power MOSFET is a type of field-effect transistor designed to handle significant power levels, typically used as a switch in power electronics. It operates by controlling the voltage on the gate terminal, which modulates the conductivity between the drain and source. Power MOSFETs are fundamental building blocks in switch-mode power supplies, motor drives, and lighting systems, where they enable efficient power conversion with minimal losses. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs. Key features of the STL11N60M6 include its extremely low on-resistance, which reduces conduction losses, and its fast switching capability, which minimizes switching losses. The device also features a low gate charge, making it suitable for high-frequency operation. The MDmesh M6 technology provides an excellent figure of merit (RDS(on) x Qg), enabling higher efficiency compared to previous generations. The PowerFLAT 5x6 package offers a low thermal resistance of 1.5°C/W (junction-to-case), allowing for efficient heat dissipation. Technically, the STL11N60M6 utilizes a vertical DMOS structure with a striped layout, optimizing the trade-off between on-resistance and capacitance. The device is avalanche-rated, with an avalanche energy of 200 mJ, ensuring robustness in inductive load switching. It also features a built-in diode with fast recovery characteristics, reducing reverse recovery losses in bridge topologies. The gate threshold voltage is 3V (typical), and the device can be driven with standard gate drivers. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and DC-DC converters. In these applications, the STL11N60M6's low on-resistance and fast switching enable high efficiency and reduced heat generation. For example, in a 100W PFC stage, the device can operate at frequencies up to 100 kHz with minimal losses. When designing with this device, ensure proper gate drive voltage (typically 10V) to achieve the lowest on-resistance. Also, consider the thermal design: the PowerFLAT 5x6 package requires a sufficient copper area on the PCB for heat sinking. Additionally, a gate resistor may be needed to control switching speed and reduce EMI.
STL125N10F8AG - 100V N-Channel Power MOSFET | STMicroelectronics
The STL125N10F8AG is an N-channel Power MOSFET from STMicroelectronics, designed for high-efficiency power conversion in automotive and industrial applications. It features a drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 125A, making it suitable for high-current switching circuits. The device is housed in a PowerFLAT 5x6 package, which offers excellent thermal performance and a compact footprint for space-constrained designs. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification in power electronics. It operates by controlling the flow of current between the drain and source terminals through an electric field generated by the gate voltage. Power MOSFETs are essential components in power management systems, including DC-DC converters, motor drives, and battery protection circuits. They are part of the broader category of discrete semiconductors, which also includes diodes, IGBTs, and thyristors. Key features of the STL125N10F8AG include a low on-state resistance (RDS(on)) of 4.5 mOhm (typical) at VGS=10V, which minimizes conduction losses and improves overall system efficiency. The device also offers a fast switching speed, with a total gate charge (Qg) of 60 nC, enabling high-frequency operation. The PowerFLAT 5x6 package provides a low thermal resistance of 1.2 C/W (junction-to-case), allowing efficient heat dissipation in high-power applications. The STL125N10F8AG is built using STMicroelectronics' advanced PowerMESH technology, which enhances the device's ruggedness and reliability. The MOSFET features an integrated gate-source ESD protection, improving its robustness in harsh environments. The device is AEC-Q101 qualified, making it suitable for automotive applications that require high reliability and performance under extreme conditions. Typical applications include DC-DC converters, motor control, battery management systems, and power supply units. In automotive systems, the STL125N10F8AG is used in electric power steering, engine control units, and LED lighting. Its low RDS(on) and high current capability make it ideal for synchronous rectification in switch-mode power supplies, where efficiency is critical. When designing with this MOSFET, it is important to consider the gate drive voltage and switching frequency to optimize performance. The device requires a gate voltage of at least 10V to achieve the lowest RDS(on). Additionally, proper PCB layout with adequate copper area for heat sinking is essential to maintain junction temperature within safe limits.
STL135N8F7AG - 80V N-Channel Power MOSFET | STMicroelectronics
The STL135N8F7AG is an N-channel Power MOSFET from STMicroelectronics, part of the STripFET F7 series, designed for high-efficiency power conversion. It features a drain-source voltage (VDS) of 80V and a continuous drain current (ID) of 135A, making it suitable for demanding applications such as synchronous rectification, DC-DC converters, and motor control. The device is housed in a PowerFLAT 5x6 package, which offers excellent thermal performance and a compact footprint for space-constrained designs. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification of power. It operates by controlling the conductivity between the drain and source terminals through an insulated gate, allowing efficient switching at high frequencies. Power MOSFETs are fundamental building blocks in power electronics, forming the basis of voltage regulators, motor drivers, and power supplies. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs, each serving distinct roles in power management. Key features of the STL135N8F7AG include a very low on-state resistance (RDS(on)) of 4.5 mOhm typical at VGS=10V, which minimizes conduction losses and improves overall efficiency. The device also offers a wide gate drive voltage range, supporting both 10V and 4.5V logic levels, and features a fast body diode with low reverse recovery charge (Qrr) for improved performance in bridge topologies. The PowerFLAT 5x6 package provides a low thermal resistance (RthJA) of 62.5 C/W, enabling effective heat dissipation in high-current applications. Technically, the STL135N8F7AG utilizes STMicroelectronics' advanced STripFET F7 technology, which employs a deep-groove structure to reduce on-resistance and gate charge simultaneously. This results in a figure of merit (RDS(on) x Qg) that is among the best in its class, making it ideal for high-frequency switching where both conduction and switching losses are critical. The device also incorporates an optimized gate oxide for enhanced robustness against electrostatic discharge (ESD) and improved dv/dt capability. Typical applications include synchronous rectification in server and telecom power supplies, DC-DC converters for industrial and automotive systems, and motor control for power tools and electric vehicles. The low RDS(on) and fast switching characteristics make it particularly well-suited for high-current, high-efficiency designs where thermal management is a concern. When designing with this device, ensure adequate gate drive voltage to fully enhance the channel and minimize RDS(on). Pay attention to PCB layout to minimize parasitic inductance and ensure proper thermal vias for heat dissipation. The device is RoHS compliant and halogen-free, meeting modern environmental standards.