2EDN7434RXTMA1 vs 2EDL8033G4BXTMA1 비교

다음의 상세 나란히 비교: 2EDN7434RXTMA1 제조: Infineon 및 2EDL8033G4BXTMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
2EDL8033G4BXTMA1 2EDL8033G4BXTMA1 - 120V Half-Bridge Gate Driver | Infineon

2EDL8033G4BXTMA1 - 120V Half-Bridge Gate Driver | Infineon

2EDL8033G4BXTMA1 ✓ 활성

사양 비교

파라미터 2EDN7434RXTMA1 2EDL8033G4BXTMA1
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.34 $1.49
Manufacturer Infineon Technologies —
Part Family EiceDRIVER 2EDN —
Driver Configuration Dual-channel low-side —
Number of Drivers 2 —
Peak Output Current 5 A (source/sink) —
Rated Output Current 4 A —
Output Resistance (Low) [DATA_NEEDED: output resistance Ron low] —
Output Resistance (High) [DATA_NEEDED: output resistance Ron high] —
Propagation Delay (Typ.) 19 ns —
Input Logic Compatibility LV-TTL, non-inverting TTL
Absolute Max Input Voltage -12 V to +22 V —
Supply Voltage Range [DATA_NEEDED: VDD range] —
패키지 PG-TSSOP-8 (3.0 x 3.0 mm) PG-VDSON-8-5
실장 유형 Surface Mount Surface Mount
동작 온도 범위 [DATA_NEEDED: operating temperature] —
RoHS 상태 Compliant Compliant
MSL 레벨 [DATA_NEEDED: MSL rating] —
Active Output Voltage Clamping Yes —
토폴로지 — Half-bridge (high-side + low-side)
Maximum Bootstrap Voltage (VBS) — 120 V
Source Drive Current — 3 A
Sink Drive Current — 4 A
Number of Channels — 2 (HS + LS)
Isolation Type — Junction-isolated (non-galvanic)
Input Common-Mode Range — -10 V to 20 V
Input Type — Independent HS and LS
Integrated Dead-Time Control — Yes (programmable)
Under-Voltage Lockout (VCC/VDD) — Yes
Under-Voltage Lockout (VBS/High-Side) — Yes
Shoot-Through Protection — Yes
Marking Code — 2ED8033G4B

데이터시트 & 자료

모든 제품 보기 BOM 생성 견적 요청