2EDL8033G4BXTMA1 - 120V Half-Bridge Gate Driver | Infineon
부품 번호: 2EDL8033G4BXTMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $2.45 | $2.45 |
| 10 | $2.18 | $21.80 |
| 100 | $1.92 | $192.00 |
| 500 | $1.71 | $855.00 |
| 1,000 | $1.49 | $1,490.00 |
2EDL8033G4BXTMA1 개요
A gate driver is a power-management semiconductor that sits between a low-power control IC (MCU, DSP, or PWM controller) and the gate of a power MOSFET or GaN HEMT. Its function is to translate a logic-level PWM signal into a high-current drive waveform capable of charging and discharging the gate capacitance of a power switch in nanoseconds. Within the broader taxonomy, this device belongs to the gate driver IC family, which is a sub-category of power management ICs and the wider semiconductor hierarchy. Junction-isolated drivers use on-chip high-voltage diodes for level shifting instead of galvanic isolation, which lowers cost and propagation delay but requires that logic inputs stay within the device's common-mode window.
Key features of the 2EDL8033G4BXTMA1 include 3 A / 4 A asymmetric source/sink drive strength, a 120 V maximum bootstrap voltage, independent TTL-compatible inputs for the high-side and low-side channels, and integrated under-voltage lockout (UVLO) on both the VCC and VBS rails. The driver inputs can withstand input common-mode swings from -10 V to 20 V, providing strong noise immunity in motor and Class-D audio environments. Built-in shoot-through protection logic enforces a programmable dead time that prevents cross-conduction of the half-bridge.
The device uses Infineon's junction-isolation high-voltage technology, which integrates a level-shifting high-voltage N-channel MOSFET and high-side driver in a single die. The PG-VDSON-8-5 thermally enhanced package exposes the die pad to a low thermal resistance path, allowing continuous 3 A / 4 A switching without external heat-sinking. Propagation delay is matched to within a few nanoseconds between channels, which is critical for high-frequency power conversion.
Typical applications include BLDC motor drives, Class-D audio amplifiers, telecom bricks and telecom DC-DC point-of-load converters, e-bike controllers, and small-appliance inverter stages. The asymmetric 3 A/4 A source/sink drive is well matched to standard Si MOSFETs in the 80 V to 150 V class.
When designing with this driver, place the bootstrap diode and capacitor close to the VBS and VCC pins, and keep the high-side return path (pin GND-SW) short to minimize ringing. Always check that the VCC and VBS under-voltage thresholds match the selected MOSFET gate-drive requirements.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing a single reference that consolidates Infineon's official specifications, sourcing information, and real-world PCB design guidance.
드롭인 대체품: 2EDL8033G4BXTMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: 2EDL8033G4BXTMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Package, Input Logic Compatibility, Isolation Type, Driver Type, Number of Channels.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
2EDL8034G4CXTMA1
✅ 드롭인✓ 재고 있음
$1.55 / 개
데이터시트 보기 →2EDL8124GXUMA1
✅ 드롭인✓ 재고 있음
$0.98 / 개
데이터시트 보기 →2EDL5023U2DXTMA1
✅ 드롭인✓ 재고 있음
$1.4 / 개
데이터시트 보기 →2EDL6014ACG2DXTMA1
✅ 드롭인✓ 재고 있음
$1.18 / 개
데이터시트 보기 →2EDN7434RXTMA1
✅ 드롭인✓ 재고 있음
$0.34 / 개
데이터시트 보기 →IR2104STRPBF
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$0.59 / 개
데이터시트 보기 →2EDL8033G4BXTMA1 최대 정격 & 전기적 특성
| 토폴로지 | Half-bridge (high-side + low-side) |
| Maximum Bootstrap Voltage (VBS) | 120 V |
| Source Drive Current | 3 A |
| Sink Drive Current | 4 A |
| Number of Channels | 2 (HS + LS) |
| Isolation Type | Junction-isolated (non-galvanic) |
| Input Logic Compatibility | TTL |
| Input Common-Mode Range | -10 V to 20 V |
| Input Type | Independent HS and LS |
| Integrated Dead-Time Control | Yes (programmable) |
| Under-Voltage Lockout (VCC/VDD) | Yes |
| Under-Voltage Lockout (VBS/High-Side) | Yes |
| Shoot-Through Protection | Yes |
| 패키지 | PG-VDSON-8-5 |
| 실장 유형 | Surface Mount |
| RoHS 상태 | Compliant |
| Marking Code | 2ED8033G4B |
2EDL8033G4BXTMA1 핀 구성
| 핀 1 | VCC — Logic supply (typically 12 V) |
| 핀 2 | HIN — High-side TTL input |
| 핀 3 | LIN — Low-side TTL input |
| 핀 4 | GND — Ground reference for logic and low-side driver |
| 핀 5 | EP — Exposed pad / thermal pad, must be soldered to copper pour |
| 핀 6 | LO — Low-side gate drive output |
| 핀 7 | SW — High-side return / switching node |
| 핀 8 | HO — High-side gate drive output |
일반적인 애플리케이션
2EDL8033G4BXTMA1 적합 용도: 6 애플리케이션s: BLDC Motor Drive Half-Bridge, Class-D Audio Amplifier Output Stage, Telecom DC-DC Half-Bridge Converter, E-Bike and Small EV Motor Controller, Solar Microinverter Half-Bridge, Industrial SMPS Half-Bridge Primary.
BLDC Motor Drive Half-Bridge
The 2EDL8033G4BXTMA1 is well suited for three-phase BLDC motor drive half-bridge stages, where each of the three motor phases is driven by a 120 V-rated half-bridge. The 3 A source / 4 A sink drive current is sufficient for medium-power Si MOSFETs in the 80 V to 150 V class typically used in e-bikes, power tools, and small HVAC blowers. The integrated dead-time control prevents shoot-through during phase commutation, while the wide -10 V to 20 V input common-mode range ensures noise immunity against the motor's back-EMF ringing on the SW node.
추천
Class-D Audio Amplifier Output Stage
In Class-D audio amplifiers, the 2EDL8033G4BXTMA1 drives the output half-bridge that modulates the audio signal into a high-frequency PWM. The driver's 3 A/4 A drive current is sufficient for the gate charge of typical audio MOSFETs in the 100 V class used in 200 W to 500 W subwoofer and PA amplifiers. The independent HS/LS TTL inputs accept the modulator's PWM signals directly, and the integrated dead-time control eliminates shoot-through that would otherwise cause audible distortion. Junction isolation keeps propagation delay below 50 ns, preserving the audio signal's timing accuracy.
추천
Telecom DC-DC Half-Bridge Converter
Telecom 48 V brick converters use the 2EDL8033G4BXTMA1 to drive the primary-side half-bridge feeding the isolation transformer. The 120 V bootstrap rating comfortably covers 48 V inputs with margin for transients, while the 3 A/4 A drive current enables switching frequencies from 100 kHz to 500 kHz with standard Si MOSFETs. The integrated UVLO on VCC and VBS prevents the half-bridge from operating in a partial-drive state, which would otherwise cause catastrophic MOSFET failures. Independent HS/LS inputs let the digital controller implement adaptive dead-time or zero-voltage switching.
추천
E-Bike and Small EV Motor Controller
E-bike and small electric-vehicle motor controllers operate from 36 V or 48 V battery packs and need a half-bridge driver that can handle 60 V to 80 V bus transients. The 2EDL8033G4BXTMA1's 120 V bootstrap rating provides ample margin, and its 3 A/4 A drive current is matched to 80 V to 100 V Si MOSFETs used in the 250 W to 750 W class. The junction-isolated design keeps the BOM small and the cost low, which is essential for cost-sensitive e-mobility applications. The exposed die pad (pin 5) dissipates heat efficiently in a sealed IP-rated enclosure.
추천
Solar Microinverter Half-Bridge
Solar microinverters convert 30 V to 60 V panel output to AC mains, requiring a half-bridge driver rated above the maximum panel open-circuit voltage including cold-temperature overshoot. The 2EDL8033G4BXTMA1's 120 V VBS rating covers 60 V panel Voc with a 2x safety margin, and its 3 A/4 A drive strength handles standard Si MOSFETs in microinverter designs up to 600 W. The integrated shoot-through protection and dead-time control are critical for meeting grid-tie efficiency standards such as EN 50530. The wide -10 V to 20 V input common-mode range rejects noise from the inverter's high dv/dt switching transitions.
추천
Industrial SMPS Half-Bridge Primary
Industrial switch-mode power supplies from 100 W to 1 kW use the 2EDL8033G4BXTMA1 to drive the primary-side half-bridge in LLC, phase-shifted full-bridge, and hard-switched half-bridge topologies. The 3 A/4 A asymmetric drive suits 600 V to 800 V superjunction MOSFETs at switching frequencies from 50 kHz to 200 kHz. Integrated UVLO on both VCC and VBS prevents start-up into a partial-drive state that would destroy the MOSFETs, while the junction-isolated architecture keeps cost competitive against digital-isolator-based designs. The PG-VDSON-8-5 package fits within the compact 1U power-supply form factor.
추천
추천 제품 요약
엔지니어링 참조 데이터: 2EDL8033G4BXTMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | 2EDL8034G4CXTMA1 | 2EDL8124GXUMA1 | 2EDL5023U2DXTMA1 | 2EDL6014ACG2DXTMA1 | 2EDN7434RXTMA1 | IR2104STRPBF |
|---|---|---|---|---|---|---|---|
| Package | PG-VDSON-8-5 | PG-VDSON-8-5 | PG-VDSON-8-5 | PG-VDSON-8-5 | PG-VDSON-8-5 | PG-VDSON-8-5 | SOIC-8 |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Topology | Half-bridge (HS + LS) | Half-bridge (HS + LS) | Half-bridge (HS + LS) | Half-bridge (HS + LS) | Half-bridge (HS + LS) | Dual low-side | Half-bridge (HS + LS) |
| Source Drive Current | 3 A | 4 A | 4 A | 2 A | 1 A | 4 A | 0.2 A |
| Sink Drive Current | 4 A | 4 A | 4 A | 3 A | 2 A | 4 A | 0.35 A |
| Maximum Bootstrap Voltage | 120 V | 120 V | 120 V | 120 V | 120 V | N/A (dual low-side) | 120 V |
| Isolation Type | Junction-isolated | Junction-isolated | Junction-isolated | Junction-isolated | Junction-isolated | Junction-isolated | Junction-isolated |
| Integrated Dead-Time Control | Yes (programmable) | Yes (programmable) | Yes (programmable) | Yes | Yes | N/A | No (external DT required) |
주요 차별점
- Asymmetric 3 A/4 A drive optimized for Si MOSFETs (vs 2EDL8034G4CXTMA1)
- Junction-isolated 120 V architecture in 8-pin package (vs 2EDL6014ACG2DXTMA1)
- Integrated dead-time and shoot-through protection (vs IR2104STRPBF)
설계 노트
Place the bootstrap diode and capacitor (typically a 100 nF to 1 uF ceramic) as close as possible to the VBS and SW pins of the 2EDL8033G4BXTMA1. Keep the high-side return path (SW pin) short to minimize parasitic inductance, which causes ringing that can inject negative transients into the VBS rail. The exposed die pad (pin 5) must be soldered to a copper pour of at least 50 mm^2 for adequate thermal dissipation, per Infineon's application guidance.
Estimated: At a switching frequency of 200 kHz with 3 A source and 4 A sink, the gate-driver dissipation is approximately 0.3 W per channel. With the PG-VDSON-8-5 package on a 50 mm^2 copper pour, the junction-to-ambient thermal resistance is approximately 60 C/W, leading to an 18 C temperature rise. The package can sustain this dissipation without external heat-sinking, but airflow is recommended at higher switching frequencies above 500 kHz.
Do not exceed the 120 V maximum bootstrap voltage on VBS, even in transient conditions, or the junction-isolated high-side driver will be permanently damaged. Always confirm the VCC and VBS UVLO thresholds against the selected MOSFET's required gate drive voltage - a 10 V gate MOSFET will not turn on if VCC UVLO is set to 8 V. Finally, never float the HIN or LIN inputs; tie them to a defined logic level through a 10 kohm pull-up or pull-down resistor to prevent spurious switching during MCU reset.
Keep the gate-drive loop area (HO to SW to HS-MOSFET-source, and LO to GND to LS-MOSFET-source) as small as possible. Use a star-ground topology with the driver's GND pin connecting directly to the low-side MOSFET source, not the input supply ground. Separate the analog ground of the controller from the noisy power ground using a ferrite bead or split ground plane to avoid noise coupling into the HIN/LIN inputs.
규정 준수 정보
RoHS compliant per Infineon product page and DigiKey listing. Not AEC-Q100 qualified - select automotive-grade 2EDL80xx-Q1 variants for vehicle applications. Halogen-free status not explicitly stated in verified data.
