2EDN7533RXTMA1 vs 1EDN7136UXTSA1 비교
다음의 상세 나란히 비교: 2EDN7533RXTMA1 제조: Infineon 및 1EDN7136UXTSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | 2EDN7533RXTMA1 | 1EDN7136UXTSA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | Power MOSFET Drivers | Power MOSFET Drivers |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.55 | $0.74 |
| 기능 | Dual-channel low-side gate driver | High-side / Low-side gate driver IC |
| Number of Channels | 2 | — |
| Input Polarity | Inverting | — |
| Peak Source/Sink Output Current | 5 A | — |
| Output Resistance (Pull-up, typ.) | 0.5 ohm | — |
| Output Resistance (Pull-down, typ.) | 0.3 ohm | — |
| Propagation Delay (typ.) | 19 ns | — |
| Channel-to-Channel Delay Matching | 1.3 ns (typ.) | — |
| Rise/Fall Time | 1.7 ns / 1.5 ns (typ., 1 nF load) | — |
| Input Logic Compatibility | LV-TTL | — |
| Input Voltage Tolerance | -12 V to +22 V | — |
| Supply Voltage VDD (recommended) | 4.5 V to 20 V | — |
| Supply Voltage VDD (absolute max) | 25 V | — |
| Under-Voltage Lockout | Yes (per channel) | — |
| 동작 접합 온도 | -40 C to +150 C | — |
| 패키지 | PG-TSSOP-8 (HTSSOP) with exposed pad | TSNP-6 with exposed pad (PG-VSON-1) |
| 실장 유형 | Surface Mount | Surface Mount |
| RoHS 상태 | Compliant | Compliant |
| Driven Device Type | — | GaN HEMT, N-channel MOSFET |
| 출력 수 | — | 2 (high-side and low-side) |
| Peak Source Current | — | 1 A |
| Peak Sink Current | — | 2 A |
| Driver Supply Voltage (Max) | — | 200 V |
| Logic Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range] |
| Input Type | — | Truly Differential Input (TDI) |
| Active Miller Clamp | — | Yes (integrated) |
| Under-Voltage Lockout (UVLO) | — | Yes (driver supply and logic input) |
| Propagation Delay (Typ) | — | [DATA_NEEDED: propagation delay value] |
| 동작 온도 범위 | — | -40 C to +150 C |
| Lead-Free | — | Yes |
| 할로겐 프리 | — | Yes (per Infineon product family convention) |
| MSL 레벨 | — | [DATA_NEEDED: MSL rating] |