BFU520AR vs BFU520R 비교
다음의 상세 나란히 비교: BFU520AR 제조: NXP Semiconductors 및 BFU520R 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BFU520AR | BFU520R |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | Transistors | Transistors |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.26 | $0.18 |
| 트랜지스터 유형 | NPN wideband silicon RF BJT | NPN wideband silicon RF BJT |
| Collector-Emitter Breakdown Voltage (VCEO) | 12 V | — |
| Continuous Collector Current (IC) | 30 mA | — |
| 전이 주파수 (ft) | 10 GHz | 10.5 GHz |
| Total Power Dissipation (Ptot) | 450 mW | — |
| 패키지 | SOT-23 (TO-236AB), 3-pin | SOT-143B (4-pin, dual-emitter, plastic) |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 범위 | -40C to +150C | [DATA_NEEDED: operating temperature range] |
| Qualification | AEC-Q101 (automotive qualified per distributor listing) | — |
| Product Family | BFU5 wideband RF transistor family | — |
| Intended Application Band | Small signal to medium power up to 2 GHz | — |
| Polarity | NPN | — |
| Noise Figure | [DATA_NEEDED: noise figure] | [DATA_NEEDED: noise figure in dB] |
| DC Current Gain (hFE) | [DATA_NEEDED: hFE] | — |
| RoHS 상태 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Packaging | Reel (R suffix, tape and reel) | — |
| 컬렉터-이미터 전압 (Vceo) | — | 12 V |
| Collector Current (IC max) | — | 30 mA |
| Total Power Dissipation | — | 450 mW |
| Frequency Range | — | up to 2 GHz application range |
| Noise Performance | — | Low noise, high breakdown |
| Automotive Qualification | — | AEC-Q101 qualified |
| Family | — | BFU5 (BFU5x wideband silicon RF transistors) |
| Configuration | — | Single NPN, dual-emitter |
| Application Class | — | Small signal to medium power |
| Gain | — | [DATA_NEEDED: gain] |