BSC030N03MSGATMA1 vs BSC030N03LSGATMA1 비교
다음의 상세 나란히 비교: BSC030N03MSGATMA1 제조: Infineon 및 BSC030N03LSGATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSC030N03MSGATMA1 | BSC030N03LSGATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.43 | $0.38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3M | OptiMOS 3 |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta | 21 A | — |
| Continuous Drain Current (ID) at Tc=25°C | 100 A | — |
| Drain-Source On-Resistance (RDS(on)) | 3.0 mΩ (typical at VGS=10V) | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc=25°C | 69 W | — |
| 동작 접합 온도 | -55°C to +150°C | -55C to +150C |
| 패키지 | PG-TDSON-8-1 (SuperSO8, 8-pin, exposed pad) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| 실장 유형 | Surface Mount | Surface Mount |
| RoHS 상태 | Compliant | Compliant |
| Drive Voltage (Min/Max RDS(on)) | 4.5V / 10V | — |
| Status | Active | — |
| Drain-Source Voltage (Vdss) | — | 30 V |
| Continuous Drain Current (Id) @ Tc=25C | — | 100 A |
| Continuous Drain Current (Id) @ Ta=25C | — | 23 A |
| RDS(on) Max @ VGS=10V | — | 3 mOhm |
| RDS(on) Max @ VGS=4.5V | — | [DATA_NEEDED: typical RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (Vgs th) Typ | — | 2.2 V |
| Gate Charge (Qg) Typ @ VGS=15V | — | 55 nC |
| Output Charge (Qoss) | — | 66 pF |
| Input Capacitance (Ciss) Typ | — | 4.3 nF |
| Power Dissipation (Pd) @ Ta=25C | — | 2.5 W |
| Power Dissipation (Pd) @ Tc=25C | — | 69 W |
| MSL 레벨 | — | 1 |
| Avalanche Rated | — | Yes (100% tested) |