BSC030N08NS5ATMA1 vs IPG20N10S436AATMA1 비교

다음의 상세 나란히 비교: BSC030N08NS5ATMA1 제조: Infineon 및 IPG20N10S436AATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BSC030N08NS5ATMA1 IPG20N10S436AATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.55 $0.68
Manufacturer Infineon Technologies —
Product Type N-Channel Power MOSFET —
Technology OptiMOS 5 —
Drain-Source Voltage (VDS) max 80 V —
Continuous Drain Current (ID) at TC=25C 100 A —
Pulsed Drain Current (ID,pulse) 161 A —
Gate-Source Voltage (VGS) max +/-20 V —
RDS(on) max at VGS=10 V 3.0 mOhm —
RDS(on) max at VGS=7 V [DATA_NEEDED: RDS(on) at VGS=7V] —
Power Dissipation (Ta=25C, 1.5mm FR4) 2.5 W —
Power Dissipation (TC=25C) 139 W —
Operating Temperature Range (TJ) -55C to +150C —
패키지 PG-TDSON-8-7 (SuperSO8 5x6 mm) PG-TDSON-8-10 (Wettable Flank)
실장 유형 Surface Mount Surface Mount
MSL 레벨 1 (per JEDEC J-STD-020) MSL1 (260 C peak reflow)
RoHS 상태 Compliant Compliant (Green Product)
할로겐 프리 Yes —
Lead-Free Yes —
Gate Drive Logic Standard 10V, compatible with 12V drive —
Optimized Application Synchronous Rectification —
Configuration — Dual N-Channel (2 Elements with Built-in Diode)
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) — 20 A (per channel)
Total Power Dissipation (PD) — 43 W
Operating Mode — Enhancement Mode
Operating Temperature (TJ max) — +175 C
JESD-609 Code — e3
Automotive Qualification — AEC-Q101
Avalanche Tested — 100%
AOI Compatible — Yes (Wettable Flank)
Channel Type — N-Channel Normal Level

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